3d tsv interconnect program an overview - sematech 6... · need a common materials and equipment...

Accelerating the next technology revolution

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3D TSV Interconnect Program -

An Overview

Sitaram ArkalgudDirector3D Interconnect

SEMATECH Symposium TaiwanSeptember 7, 2010

2

3D TSV -

An industry game changer

•

Enables increased non-

scaling system productivity•

Enables increased functionality through heterogeneous integration for emerging system-on-chip applications

•

Via last technology (post stack TSV formation) requires wafer –

wafer

bonding–

Requires high yield and matching die footprint and wafer sizes•

Via mid technology (post CMOS, pre bond TSV formation) permits die –

wafer bonding–

Allows pre-screening of dies for yield, dissimilar die and wafer sizes–

Allows heterogenous

integration with high functionality

Source: Samsung Source: Intel Source: Qualcomm

Driver:

DensityTechnology:

Via lastDriver:

Performance, powerTechnology:

F2F Cu-Cu, Via lastDriver:

Power efficient performance, functionalityTechnology:

Via mid

3

Major industry challenges in 3D

•

Weak materials and tool infrastructure–

Little/no convergence on technology options and process flows–

Key technical challenges need to be addressed•

E.g.: Is Cu bonding the right solution? CoO, reliability, …. –

Tools have extremely low productivity•

E.g.: D2W bonding at 1 die bond/min, W2W bonding at 1 pair/2-3 hours

•

Gaps in the supply chain–

Who does what operations? Fab vs

Outsourced Assembly & Test–

Integrations spanning fab and assembly become a requirement

•

Lack of convergence delays industry success•

Need a common materials and equipment path to serve a broad industry base

4

SEMATECH’s

3D activities

•

Drive convergence of the materials/equipment solutions–

Technology roadmaps and standards, including architecture, design, test and application perspectives

–

Work with other parties, including Member Companies, fabless

community, SRC etc., to drive convergence

–

Industry consensus building through workshops and forums

•

Ensure that the UPD and module integration programs are relevant–

Drive critical equipment evaluations (supplier landscape)–

Develop critical equipment (tool hardening)–

Materials, unit process and characterization development–

Structural module builds–

Leverage CNSE and FEP to broaden scope of current integration program•

Device interaction•

Thermo-mechanical modeling

•

Assist Member Company implementation–

Equipment access–

Structural module builds

5

3D TSV collaborations

3D TSV program•

Materials development•

Equipment development•

Unit process development•

Integration•

Reliability•

Ecosystem development

6


Supplier•



Metrology•

Process development

3D TSV program•




Integration•

Reliability•


7


Supplier•



Metrology•

Process development

Front End program and Member Companies

•


Modeling & simulation

3D TSV program•




Integration•

Reliability•


8


University•

Advanced metrology•

Thermo-mechanical modeling

•


Reliability

Supplier•



Metrology•

Process development

Front End program and Member Companies

•


Modeling & simulation

3D TSV program•




Integration•

Reliability•


Slice Plot: Von Mises

> 172.3MPaTanneal

= 350oCTSV boundary

Blue areas in TSV are below yield stress (172.3MPa)

9

Worldwide 3D TSV members

10

Focus area for SEMATECH program•

The part of the 3D space we are targeting:

•

“Via-middle”–

TSV’s formed after FEOL and before BEOL•

TSV before 3D stacking•

Wafer thinning before 3D stacking•

Back-to-face bonding•

Die to wafer bonding–

Option: die are aligned and pre-bonded, followed by a wafer-level bond

•

“Global level”

of the interconnect hierarchy•

Minimum TSV diameter: 4-8 µm (through 2012), 2-4 µm (2012-2015)•

20-50 µm TSV depth•

3D System On Chip (3D-SOC)•

3D Stacked Integrated Circuit (3D-SIC)TSV

11

Scope of TSV development

STI

Deep n-well(Denuded Zone)

P-well

GNDGND

STI

ttsv_isoDTSV

TSV

Materials:Liner, barrier, seedPlating chemistryBond materials

Temporary, tackPermanent

Equipment DevelopmentUnit Process Development

TSV ModuleBond ModuleThin and handleBackside processing

MetrologyInfraredAcousticx-ray techniquesStandard techniques

IntegrationPassive TSV daisy chainsTSV DtW

daisy chainsDevice interactions

65nm and 30 nm planar/non-planarKeep out area

Thermo-mechanical modeling/simulationElectrical modeling/simulation Early reliability

12

3D equipment capability

•

Bond–

Wafer Align/Bond

EVG 540–

Next generation wafer bonder

EVG Gemini–

Die Align/bond (manual)

SET Kadett–

Die align/bond (automated)

SET FC300•

3D Metrology–

Scanning Acoustic Microscope

Sonix–

Thickness Monitor (capacitance)

MTII–

IR Microscope

Olympus–

TSV Depth and Profile

Lasertec

TSV300IR–

All Surface Inspection

Rudolph AXi935–

Access to AFM, SEM, TEM, HRP, etc via ISMI & CNSE •

TSV RIE

TEL Telius

SP UD•

Multicell

Cu Plater

NEXX Stratus•

Wafer backgrind

Okamoto•

Spin/bake (materials characterization)

Brewer Cee

Module•

Wet hood for cleans and chemical thinning•

Access to state of the art BEOL tooling for standard CMOS processing and metrology at CNSE

13

SEMATECH 3D ecosystem development•

SEMATECH Workshops on Stress Management For 3D ICs Using Through

Silicon Vias

–

March 16, 2010 (Albany NY)–

July 13, 2010 (SEMICON –

West; San Francisco, CA); in collaboration with Fraunhofer

IZFP–

October, 2010 (SEMICON –

Europa; Dresden, Germany); in collaboration with Fraunhofer

IZFP•

SEMI/SEMATECH 3D Interconnect Challenges and Need for Standards Workshop

–


West; San Francisco, CA)•

SEMATECH Workshop on 3D Interconnect Metrology–


West; San Francisco, CA)•

Readout to SIA/TSC–

July 15, 2010 (San Jose, CA)•

Joint SEMATECH/SEMI IC Technology Forum–

September 9, 2010 (SEMICON –

Taiwan; Taipei)

14

Summary

•

3D can be the new engine to keep the industry on the productivity curve–

High performance and high functionality–

Lower power consumption and footprint

•

Technical feasibility alone does not enable high volume manufacturing–

Proven material, process and equipment capability is essential•

Roadmaps to drive consensus and coalesce critical resources–

Supply chain readiness is essential•

Industry-wide standards required on equipment and products

•

3D is not a single technology element–

Productivity benefits can be realized at several levels–

Cost impact needs to be assessed from a system perspective–

Industry-wide coordination necessary across front end, assembly, design, and test

•

SEMATECH is accelerating progress in the development of

cost-effective and manufacturable

3D TSV solutions

15

Accelerating the next technology revolution

Research Development Manufacturing

3d tsv interconnect program an overview - sematech 6... · need a common materials and equipment...

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