wns40h100c - ween semi

WNS40H100CDual power Schottky diode26 April 2019 Product data sheet

1. General descriptionDual common cathode power Schottky diode designed for high frequency switched mode powersupplies in a TO-220 plastic package.

2. Features and benefits• Trench structure• High junction temperature up to 150°C• High efficiency• Low forward voltage drop, negligible switching losses

3. Applications• DC to DC converters• Freewheeling diode• OR-ing diode

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VRRM repetitive peak reversevoltage

- - 100 V

IF(AV) average forwardcurrent

δ = 0.5 ; Tmb ≤ 133 °C; square-wavepulse; per diode; Fig. 1; Fig. 2; Fig. 3

- - 20 A

IO(AV) average output current δ = 0.5 ; Tmb ≤ 130 °C; square-wavepulse; both diodes conducting

- - 40 A

Static characteristics

IF = 10 A; Tj = 25 °C; Fig. 6; per diode - 0.53 0.59 V



VF forward voltage


VR = 100 V; Tj = 25 °C; Fig. 7; Fig. 8;per diode

- - 50 µAIR reverse current


- - 30 mA

WeEn Semiconductors WNS40H100CDual power Schottky diode

WNS40H100C All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2019. All rights reserved

Product data sheet 26 April 2019 2 / 11

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 A1 anode 1

2 K cathode

3 A2 anode 2

mb K mounting base; connected tocathode

TO-220E

sym125

A2A1

K

6. Ordering informationTable 3. Ordering information Type number Package

Name Orderable part number Packing

method Small packing quantity

Package version

Package issue date

WNS40H100C TO220 WNS40H100CQ Tube 50 TO220E 26-April-2019




7. Limiting valuesTable 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reversevoltage

- 100 V

VRWM limiting crest workingreverse voltage

- 100 V

VR limiting reverse voltage DC - 100 V

IF(AV) average forward current δ = 0.5 ; Tmb ≤ 133 °C; square-wavepulse; per diode; Fig. 1; Fig. 2; Fig. 3

- 20 A

IO(AV) average output current δ = 0.5 ; Tmb ≤ 130 °C; square-wavepulse; both diodes conducting

- 40 A

tp = 10 ms; Tj(init) = 25 °C; sine-wavepulse; per diode; Fig. 4

- 380 AIFSM non-repetitive peakforward current

tp = 8.3 ms; Tj(init) = 25 °C; sine-wavepulse; per diode

- 418 A

Tstg storage temperature -40 150 °C

Tj junction temperature - 150 °C

0 6 12 18 24 300

4

8

12

16

20

24

IF(AV) (A)

Ptot(W)

δ = 1

0.5

0.2

0.1

ama2-001

IF(AV) = IF(RMS) × √δVo = 0.557 V; Rs = 0.0071 Ω

Fig. 1. Forward power dissipation as a function ofaverage forward current; square waveform; maximumvalues; per diode

0 4 8 12 16 200

4

8

12

16

20

IF(AV) (A)

Ptot(W)

ama2-002

a = 1.57

1.92.2

2.8

4.0

a = form factor = I F(RMS) / IF(AV)Vo = 0.570 V; Rs = 0.0071 Ω

Fig. 2. Forward power dissipation as a functionof average forward current; sinusoidal waveform;maximum values; per diode




-50 0 50 100 150 2000

4

8

12

16

20

24

Tmb (°C)

IF(AV)(A)

ama2-003

133°C

Fig. 3. Average forward current as a function ofmounting base temperature; maximum values; perdiode

10-5 10-4 10-3 10-210

102

103

104

tp (s)

IFSM(A)

IF

Tj(init) = 25 °C max

IFSM

tp

t

ama2-004

Fig. 4. Non-repetitive peak forward current as a functionof pulse width; sinusoidal waveform; maximum values;per diode




8. Thermal characteristicsTable 5. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

per diode; Fig. 5 - - 1 K/WRth(j-mb) thermal resistancefrom junction tomounting base both diodes conducting - - 0.6 K/W

Rth(j-a) thermal resistancefrom junction toambient

in free air - 60 - K/W

10-6 10-5 10-4 10-3 10-2 10-1 1 1010-4

10-3

10-2

10-1

1

10

tp (s)

Zth(j-mb)(K/W)

P

ttpT

tpδ = T

ama2-005

δ = 0.5δ = 0.3δ = 0.1δ = 0.05

single pulse

δ = 0.02δ = 0.01

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration; maximumvalues; per diode




9. CharacteristicsTable 6. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics




VF forward voltage



- - 50 µAIR reverse current


- - 30 mA

0 0.2 0.4 0.6 0.8 1 1.20

10

20

30

40

50

VF (V)

IF(A)

ama2-006

(1) (2) (3)

Vo = 0.557 V; Rs = 0.0071 Ω(1) Tj = 150 °C; typical values(2) Tj = 150 °C; maximum values(3) Tj = 25 °C; maximum values

Fig. 6. Forward current as a function of forward voltage;per diode

0 20 40 60 80 10010-1

1

10

102

103

104

105

VR (V)

IR(μA)

ama2-007

(1)

(3)

(2)

(4)

(1) Tj = 25 °C; typical values(2) Tj = 100 °C; typical values(3) Tj = 125 °C; typical values(4) Tj = 150 °C; typical values

Fig. 7. Reverse leakage current as a function of reversevoltage; per diode; typical values




10-1 1 10 10210

102

103

104

VR (V)

Cj(pF)

ama2-008

f = 1 MHz; Tj = 25 °C

Fig. 8. Junction capacitance as a function of applied reverse voltage; per diode; typical values




10. Package outline

Fig. 9. Package outline TO-220E

Plastic single-ended package;heatsink mounted;1 mounting hole; 3 leads TO-220AB TO220

ØP

L1

D2

E1

Q

c

A1AE

q

D1

D

L

H1

2xe b

b1




11. Legal information

Data sheet status

Documentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

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Product[short] datasheet

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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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12. Contents1. General description......................................................12. Features and benefits.................................................. 13. Applications.................................................................. 14. Quick reference data....................................................15. Pinning information......................................................26. Ordering information....................................................27. Limiting values............................................................. 38. Thermal characteristics............................................... 59. Characteristics..............................................................610. Package outline.......................................................... 811. Legal information....................................................... 9

© WeEn Semiconductors Co., Ltd. 2019. All rights reservedFor more information, please visit: http://www.ween-semi.comFor sales office addresses, please send an email to: [email protected] Date of release: 26 April 2019