bta41-800b - ween

BTA41-800B4Q Triac10 July 2017 Product data sheet

1. General descriptionPlanar passivated four quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C). It is used in applications where "high junction operating temperature capability" is required.

2. Features and benefits• High current TRIAC• Low thermal resistance• High junction operating temperature capability (Tj(max) = 150 °C)• High voltage capability • Planar passivated for voltage ruggedness and reliability• Insulated tab rated at 2500 V rms

3. Applications• High current / high surge applications• High power / industrial controls -- e.g. heating, motors, lighting

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Values UnitAbsolute maximum rating

VDRM repetitive peak off-state voltage

800 V

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 105 °C; Fig. 1; Fig. 2; Fig. 3

40 A

ITSM non-repetitive peak on- state current

full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5

400 A

full sine wave; tp = 16.7 ms; Tj(init) = 25 °C; 440 A

Tj junction temperature 150 °C

WeEn Semiconductors BTA41-800B4Q Triac

BTA41-800B

Product data sheetAll information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved

10 July 2017 2 / 12

Symbol Parameter Conditions Min Typ Max UnitStatic characteristics

IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+ Tj = 25 °C; Fig. 7

- - 50 mA

VD = 12 V; IT = 0.1 A; T2+ G- Tj = 25 °C; Fig. 7

- - 50 mA

VD = 12 V; IT = 0.1 A; T2- G- Tj = 25 °C; Fig. 7

- - 50 mA

VD = 12 V; IT = 0.1 A; T2- G+ Tj = 25 °C; Fig. 7

- - 70 mA

IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 80 mA

VT on-state voltage IT = 56.6 A; Tj = 25 °C; Fig. 10 - 1.2 1.5 V

Dynamic characteristics

dVD/dt rate of rise of off-state voltage

VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit

750 - - V/μs


500 - - V/μs

dIcom/dt rate of change of commutating current

VD = 400 V; Tj = 125 °C; IT(RMS) = 20A; dVcom/dt = 20 V/μs; gate open circuit

20 - - A/ms


10 - - A/ms

5. Pinning information

6. Ordering information

Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1

1 2 3

IITO3P (SOT1292)

sym051

T1G

T2

2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated

Type number Package Name Description Version

BTA41-800B IITO3P plastic single-ended through-hole package; isolated heatsink mounted; 1 mounting hole; 3-lead TO3P

SOT1292

Table 3. Ordering information

7. Marking

Type number Marking codes BTA41-800B BTA41-800B

Table 4. Marking codes


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8. Limiting valuesTable 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

-50 0 50 100 1500

10

20

30

40

50

Tmb (°C)

IT(RMS)(A)

bmdb6-001

105 °C

10-2 10-1 1 1036

38

40

42

44

surge duration (s)

IT(RMS)(A)

bmdb6-002

Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values

f = 50Hz; Tmb = 105 °CFig. 2. RMS on-state current as a function of surgeduration; maximum values

Symbol Parameter Conditions Values Unit VDRM repetitive peak off-state

voltage 800 V

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 105°C; Fig. 1; Fig. 2; Fig. 3

40 A

ITSM non-repetitive peak on-state current

full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5

400 A

full sine wave; tp = 16.7 ms; Tj(init) = 25 °C; 440 A

I2t I2t for fusing tp = 10ms; sine wave 800 A2s

dIT/dt rate of rise of on-statecurrent

IG = 150mA 150 A/μs

IGM peak gate current tp = 20μs 8 A

PGM peak gate power tp = 20μs 40 W

PG(AV) average gate power over any 20 ms period 1 W

Tstg storage temperature -40 to 150 °C

Tj junction temperature 150 °C


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0 10 20 30 40 500

12

24

36

48

60

IT(RMS) (A)

Ptot(W)

bmdb6-003

conductionangle

(degrees)

formfactor

α306090120180

2.8161.9671.5701.3291.110

α

120

90

60

30

α = 180°

°

°

°

°

150

139.2

117.6

96Tmb(max)(°C)

128.4

106.8

1 10 102 1030

100

200

300

400

500

number of cycles (n)

ITSM(A)

IT

Tj(init) = 25 °C max

ITSM

T

t

bmdb6-004

10-5 10-4 10-3 10-2 10-110

102

103

104

tp (s)

ITSM(A)

IT

Tj(init) = 25 °C max

ITSM

T

t

bmdb6-005

(1)

α = conduction angle a = form factor = IT(RMS) / IT(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values

tp ≤ 20 ms ; (1) dIT/dt limitFig. 5. Total power dissipation as a function of RMS on-state current; maximum values


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9. Thermal characteristicsTable 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance

from junction to mounting base

Fig. 6 - - 0.9 K/W

Rth(j-a) thermal resistance from junction to ambient free air

in free air - 55 - K/W

10-6 10-5 10-4 10-3 10-2 10-1 1 1010-3

10-2

10-1

1

10

tp (s)

Zth(j-mb)(K/W)

P

ttpT

tpδ = T

bndb6-006

Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Isolation characteristicsTable 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminal to external heatsink;

sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C

- - 2500 V


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11. CharacteristicsTable 7. Characteristics Symbol Parameter Conditions Min Typ Max UnitStatic characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7 - - 50 mA

VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C; Fig. 7

- - 50 mA

VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C; Fig. 7

- - 50 mA

VD = 12 V; IT = 0.1 A; T2- G+;Tj = 25 °C; Fig. 7

- - 70 mA

IL latching current VD = 12 V; IT = 0.1 A; T2+ G+;Tj = 25 °C; Fig. 8

- - 100 mA

VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C; Fig. 8

- - 160 mA

VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C; Fig. 8

- - 100 mA

VD = 12 V; IT = 0.1 A; T2- G+;Tj = 25 °C; Fig. 8

- - 100 mA

IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 80 mA

VT on-state voltage IT = 56.6 A; Tj = 25 °C; Fig. 10 - 1.2 1.5 V

VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11

- 0.8 1.3 V

VD = 400 V; IT = 0.1 A; Tj = 150 °C; Fig. 11

0.2 0.45 - V

ID off-state current VD = 800 V; Tj = 25 °C - - 10 μA

VD = 800 V; Tj = 150 °C - - 2.5 mA

Dynamic characteristics

dVD/dt rate of rise of off-state voltage


750 - - V/μs


500 - - V/μs

dIcom/dt rate of change of commutating current


20 - - A/ms


10 - - A/ms


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-50 0 50 100 1500

1

2

3

Tj (°C)

bndb6-007

IGTIGT(25°C)

(1)

(2)

(3)

(4)

-50 0 50 100 1500

1

2

3

Tj (°C)

bndb6-008

ILIL(25°C)

-50 0 50 100 1500

1

2

3

Tj (°C)

bndb6-009

IHIH(25°C)

0 1 20

20

40

60

80

VF (V)

IF(A)

bmdb6-010

(1) (3)(2)

(1) T2- G+ (2) T2- G- (3) T2+ G- (4) T2+ G+Fig. 7. Normalized gate trigger current as a function ofjunction temperature

Fig. 8. Normalized latching current as a function ofjunction temperature

Fig. 9. Normalized holding current as a function ofjunction temperature

Vo = 1.063 V; Rs = 0.0074 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum valuesFig. 10. On-state current as a function of on-state voltage


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-50 0 50 100 1500.4

0.8

1.2

1.6

Tj (°C)

bndb6-011

VGTVGT(25°C)

Fig. 11. Normalized gate trigger voltage as a function of junction temperature


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12. Package outline


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13. Legal information

Data sheet status

Documentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1 lease consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.ween-semi.com.

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Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local WeEnSemiconductors sales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. WeEn Semiconductors makesno representation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of their applicationsand products using WeEn Semiconductors products, and WeEnSemiconductors accepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the WeEn Semiconductors product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without WeEn Semiconductors’ warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondWeEn Semiconductors’ specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies WeEn Semiconductors forany liability, damages or failed product claims resulting from customerdesign and use of the product for automotive applications beyond WeEnSemiconductors’ standard warranty and WeEn Semiconductors’ productspecifications.

] P


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Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.


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14. Contents1. General description .......................................................12. Features and benefits ...................................................13. Applications ...................................................................14. Quick reference data .....................................................15. Pinning information .......................................................26. Ordering information .....................................................27. Marking ...........................................................................28. Limiting values ..............................................................39. Thermal characteristics ................................................510. Isolation characteristics .............................................511. Characteristics .............................................................612. Package outline ...........................................................913. Legal information ......................................................1014. Contents .....................................................................12

© WeEn Semiconductors Co., Ltd. 2017. All rights reservedFor more information, please visit: http://www.ween-semi.comFor sales office addresses, please send an email to: [email protected] of release: 10 July 2017