bta412y-800b · bta412y-800b 3q triac rev.01 - 15 april 2019 product data sheet 1. general...

BTA412Y-800B3Q TriacRev.01 - 15 April 2019 Product data sheet

1. General descriptionPlanar passivated high commutation three quadrant triac in an IITO220 internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high Tj operating capability and an internally isolated mounting base.

2. Features and benefits• 3Q technology for improved noise immunity• High commutation capability with maximum false trigger immunity• High junction operating temperature capability (Tj(max) = 150 °C)• High surge capability• Isolated mounting base with 2500 V (RMS) isolation• Least sensitive gate for highest noise immunity• Planar passivated for voltage ruggedness and reliability• Triggering in three quadrants only• Very high immunity to false turn-on by dV/dt

3. Applications• Electronic thermostats (heating and cooling)• High power motor controls• Rectifier-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference dataTable 1. Quick reference data Symbol Parameter Conditions Values UnitAbsolute maximum ratingVDRM repetitive peak off-state

voltage 800 V

IT(RMS) RMS on-state current square-wave pulse; Tmb ≤ 116 °C; Fig. 1; Fig. 2; Fig. 3

12 A

ITSM non-repetitive peak forward current

full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5

140 A

full sine wave; tp = 16.7 ms; Tj(init) = 25 °C 153 A

Tj junction temperature 150 °C

WeEn Semiconductors BTA412Y-800B3Q Triac

BTA412Y-800B

Product data sheetAll information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2019. All rights reserved

15 April 2019 2 / 13

Symbol Parameter Conditions Min Typ Max UnitStatic characteristics

IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+ Tj = 25 °C; Fig. 7

2 - 50 mA

VD = 12 V; IT = 0.1 A; T2+ G- Tj = 25 °C; Fig. 7

2 - 50 mA

VD = 12 V; IT = 0.1 A; T2- G- Tj = 25 °C; Fig. 7

2 - 50 mA

IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 60 mA

VT on-state voltage IT = 18 A; Tj = 25 °C; Fig. 10 - 1.3 1.5 V

Dynamic characteristics

dVD/dt rate of rise of off-state voltage

VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit

1000 - - V/μs


600 - - V/μs

dIcom/dt rate of change of commutating current

VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/μs; gate open circuit; snubberless condition

20 - - A/ms


8 - - A/ms

5. Pinning information

6. Ordering information

Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1

1 2 3IITO-220

sym051

T1G

T2 2 T2 main terminal 2 3 G gate mb n.c mounting base; isolated

Table 3. Ordering information

7. Marking

Type number Marking codes BTA412Y-800B BTA412Y-800B

Table 4. Marking codes

Type number Package name

Orderable part number Packing method

Small packing quantity

Package version

Package issue date

BTA412Y-800B IITO220 BTA412Y-800B,127 Tube 50 IITO220E 15-Dec-2017


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8. Limiting valuesTable 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

003aab813

0

10

20

30

40

10-2 10-1 1 10 surge duration (s)

I T(RMS)

(A)

003aab814

0

5

10

15

-50 0 50 100 150 T mb ( ° C)

I T(RMS)

(A) 116°C

Fig. 2. RMS on-state current as a function of mounting base temperature; maximum values

f = 50Hz; Tmb = 116 °C Fig. 1. RMS on-state current as a function of surge duration; maximum values

Symbol Parameter Conditions Values Unit VDRM repetitive peak off-state

voltage 800 V

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 116°C; Fig. 1; Fig. 2; Fig. 3

12 A

ITSM non-repetitive peak on-state current

full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5

140 A

full sine wave; tp = 16.7 ms; Tj(init) = 25 °C 153 A

I2t I2t for fusing tp = 10ms; sine wave 98 A2/s

dIT/dt rate of rise of on-statecurrent

IG = 100mA 100 A/μs

IGM peak gate current 2 A

PGM peak gate power 5 W

PG(AV) average gate power over any 20 ms period 0.5 W

Tstg storage temperature -40 to 150 °C

Tj junction temperature 150 °C


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003aab810

0

4

8

12

16

0 3 6 9 12 I T(RMS) (A)

P tot

(W)

α = 180 °

120 °

90 °

60 °

30 °

conduction angle

(degrees)

form factor

a

30 60 90

120 180

2.816 1.976 1.570 1.329 1.110

α

003aab811

0

40

80

120

160

1 10 102 103

number of cycles (n)

ITSM

(A)

ITSM

t

IT

Tj(init) = 25 °C max 1/f

α = conduction angle a = form factor = IT(RMS) / IT(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values


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003aab812

10

102

103

10-5 10-4 10-3 10-2 10-1

tp (s)

ITSM

(A)

ITSM

t

IT

Tj(init) = 25 °C maxtp

(1)

tp ≤ 20 ms ; (1) dIT/dt limit Fig. 5. Total power dissipation as a function of RMS on-state current; maximum values


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9. Thermal characteristicsTable 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance

from junction to mounting base

full cycle; Fig. 6 - - 2.1 K/W

Rth(j-a) thermal resistance from junction to ambient free air

in free air - 60 - K/W

003aab815

10- 1

10- 2

1

10

Zth(j-mb) (K/W)

10- 3

tp (s)10- 5 1 1010- 110- 210- 4 10- 3

tp

P

t

Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Isolation characteristicsTable 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all

pins to external heatsink; sinusoidal waveform; clean and dust free

- - 2500 V

Cisol isolation capacitance from cathode to external heatsink - 10 - pF


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11. CharacteristicsTable 7. Characteristics Symbol Parameter Conditions Min Typ Max UnitStatic characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7 2 - 50 mA

VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C; Fig. 7

2 - 50 mA

VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C; Fig. 7

2 - 50 mA

IL latching current VD = 12 V; IT = 0.1 A; T2+ G+;Tj = 25 °C; Fig. 8

- - 60 mA

VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C; Fig. 8

- - 90 mA

VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C; Fig. 8

- - 60 mA

IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 60 mA

VT on-state voltage IT = 18 A; Tj = 25 °C; Fig. 10 - 1.3 1.5 V

VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11

- 0.8 1 V

VD = 400 V; IT = 0.1 A; Tj = 150 °C 0.25 0.4 - V

ID off-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 μA

VD = 800 V; Tj = 150 °C - 0.4 2 mA

Dynamic characteristics

dVD/dt rate of rise of off-state voltage


1000 - - V/μs


600 - - V/μs

dIcom/dt rate of change of commutating current


20 - - A/ms


8 - - A/ms


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Tj (°C)- 50 1501000 50

001aag165

1

2

3

0

(1)

(2)

(3)

IGTIGT(25°C)

Tj (°C)- 50 1501000 50

001aag166

1

2

3

0

IL IL(25°C)

Tj (°C)- 50 1501000 50

001aag167

1

2

3

0

IH IH(25°C)

003aab666

0

10

20

30

40

50

0 0.5 1 1.5 2VT (V)

IT

(A)

(1) (2) (3)

(1) T2- G- (2) T2+ G- (3) T2+ G+ Fig. 7. Normalized gate trigger current as a function of junction temperature

Fig. 8. Normalized latching current as a function of junction temperature

Fig. 9. Normalized holding current as a function of junction temperature

Vo = 1.024 V; Rs = 0.021 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage


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Tj (°C)- 50 150100500

001aag168

0.8

1.2

1.6

VGT

0.4

VGT(25°C)

Fig. 11. Normalized gate trigger voltage as a function of junction temperature


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Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 leads TO-220 IITO220

q ØP

D2

E

c

Q

L

D1

D

A

A1

L1

b

b1

12. Package outline


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13. Legal information

Data sheet status

Documentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1 lease consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.ween-semi.com.

DefinitionsDraft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. WeEn Semiconductors does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local WeEnSemiconductors sales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. WeEn Semiconductors makesno representation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of their applicationsand products using WeEn Semiconductors products, and WeEnSemiconductors accepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the WeEn Semiconductors product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

WeEn Semiconductors does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using WeEnSemiconductors products in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). WeEn does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without WeEn Semiconductors’ warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondWeEn Semiconductors’ specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies WeEn Semiconductors forany liability, damages or failed product claims resulting from customerdesign and use of the product for automotive applications beyond WeEnSemiconductors’ standard warranty and WeEn Semiconductors’ productspecifications.

] P


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Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.


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© WeEn Semiconductors Co., Ltd. 2019. All rights reservedFor more information, please visit: http://www.ween-semi.comFor sales office addresses, please send an email to: [email protected] of release: 15 April 2019

14. Contents1. General description .......................................................12. Features and benefits ...................................................13. Applications ...................................................................14. Quick reference data .....................................................15. Pinning information .......................................................26. Ordering information .....................................................27. Marking ...........................................................................28. Limiting values ..............................................................39. Thermal characteristics ................................................610. Isolation characteristics .............................................611. Characteristics .............................................................712. Package outline .........................................................1013. Legal information ...................................................... 1114. Contents .....................................................................13