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Innovative E-Beam Applications for

Advanced Technology Nano-defect Era

SEMATECH Symposium Taiwan 2012

Ray Li

Senior Manager

Technical Marketing

Hermes Microvision Inc.

October 18th, 2012


○ Fundamental Application of E-Beam Wafer Inspection

○ Innovative Application of E-Beam Inspection

- Combination of CDU Measurement and Defect Detection

- Die-to-database Inspection

- EUV Mask Pattern Inspection

- Potential Application for TSV

○ EBI’s Future Technology

Outline









Outline


Fundamental Application of E-Beam Wafer Inspection

VC (Voltage Contrast) Defect : Electrical related

Physical Defect : Pattern or material related

FEOL

MOL

BEOL

Defect detection with die-to-die / cell-to-cell comparison

… …

…

What E-beam can do more?


Potential Application for E-Beam

CD SEM

Optical

Inspection

Review

SEM

E-Beam

VC Defect

Physical Defect

CDU OVL

Monitor

Hotspot

Inspection

ADC

Auto

Review

OPC

Verification

PWQ

Defect

Inspection

Edge Die

Monitor









Outline


Combination of CDU Measurement and Defect Detection

Small physical defects sometimes show dependence on

the CD of some important structures. (C. Boye et al, ASMC 2012)

CDU (spacer THK)

Contour map

Defect count

Contour map

(a). # of Epi-grow Defect vs.

Normalized Thickness of Spacer (SRAM)

1

10

100

1000

0.50 0.60 0.70 0.80 0.90 1.00 1.10

Normalized Thickness of Spacer

# o

f E

pi-

Gro

w D

efe

ct

(lo

g10)

Reverse

dependency

observed

E-beam

Inspection

Defect

Inspection

CDU

Measurement

Value added application !









Outline


(O. Patterson et al, SPIE 2012)

Die-to-database (Comparison of Wafer and Design Data)

Data collection process Defect deposition process

SupernovaTM + EBI

D2DB E-beam Inspection

Inspection Methodology

For Pattern Fidelity Evaluation

SupernovaTM defect analysis

•Defect binning by pattern

•Defect binning by severity

•Defect maps output

•Multi-layer GDS D2DB inspection

•Defect list with images



(O. Patterson et al, SPIE 2012)

• Short loop PWC wafer.

• Inspected after liner/seed, to capture fill issues.

• Hot spot scan found both shorts and opens.

• Inspect after Cu CMP to best capture shorts.

Lines have pinched off

with liner and seed. The

copper plating will be

blocked resulting in a

void.

Defect count by die for

type 1 (killer) and type 2

(maybe killer) defects.

Modulated die are in

boxes.

Application 1: M2 Liner

killer

maybe killer



(O. Patterson et al, SPIE 2012) Application 2: Via Etch

• Short loop modulated wafer inspected. (1 cm2 of a die at the

edge of the process window)

• The wafer was coated with liner to keep it from charging.

• 100s of assist features were detected.

• A hot spot inspection was used to validate new masks with

updated OPC.

Early detection of these type failures can save months

off the ramp of a new product !

Defect map for

scanned chip

Map showing the

location of printing

assist features on

the reticle field









Outline


EUV Mask Pattern Inspection

(T. Shimomura et al, SPIE 2012)

4 types of program defect for evaluation

E-beam inspection system has 16nm edge defect detection

sensitivity on 64nm HP EUV mask.

No defect produced

16nm defect detected




• Need further improvement of patterning process for 64nm HP EUV mask.

• Need various technology to improve throughput, e.g. Lightning ScanTM

• Throughput

1250um x 1250um

6 min 46 sec

10cm x 10cm

31 days

Inspectability of 64nm HP pattern



Summary of 16nm HP EUV masks evaluation :

1. EBI system has capability to capture 16nm edge defects on 64nm

EUV mask.

2. No significant damage to susceptible Ru capped Mo/Si multilayer.


Note from HMI :

E-beam inspection (DD/D2DB) technology for EUV pattern mask and

NIL template is under evaluation. So far no sensitivity concern,

throughput new technology is parallel developing.

Investigation of bump type defects creation

No significant increase of defects

after combination of e-beam

bombardment and cleanings.









Outline


• TSV Open/Leakage detection by VC

• Thin Dielectric Film Remains by Gray Level Comparison

Potential TSV Application by E-beam Inspection

Leakage

Isolation

Liner

Oxide Remain

at bottom of

etched hole

TSV Open

Residue

Glass Carrier wafer

e

Feasibility study is under way !









Outline


Future

Technology

Projection

eBeam

Multiple

eBeam

Multi-column

Multi-objective

lens

Multi-column

Single objective

lens

Pros High scan rate With-in full die

application

Easy control

symmetry beam Small volume

Cons

Interaction

high, low SNR,

low resolution

Asymmetrical

control,

non-uniform

Large volume Asymmetrical

control

Resolution Moderate Moderate High High

Throughput Fastest Faster Fast Faster

EBI’s Future Technology

HMI is working on multi-axis technology for future need !


Thank you for the attention

innovative e-beam applications for advanced … e-beam applications for advanced technology...

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