ee466: vlsi design power dissipation. outline motivation to estimate power dissipation sources of...

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Page 1: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

EE466: VLSI Design

Power Dissipation

Page 2: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Outline

• Motivation to estimate power dissipation• Sources of power dissipation• Dynamic power dissipation• Static power dissipation• Metrics• Conclusion

Page 3: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Need to estimate power dissipation

Power dissipation affects• Performance • Reliability• Packaging• Cost• Portability

Page 4: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Where Does Power Go in CMOS?

• Dynamic Power Consumption

• Short Circuit Currents

• Leakage

Charging and Discharging Capacitors

Short Circuit Path between Supply Rails during Switching

Leaking diodes and transistors

Page 5: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Node Transition Activity and PowerNode Transition Activity and Power

Consider switching a CMOS gate for N clock cycles

EN CL Vdd 2 n N =

n(N): the number of 0->1 transition in N clock cycles

EN : the energy consumed for N clock cycles

Pavg N lim

ENN-------- fclk

= n N N------------

N lim

CL

Vdd 2

fclk=

0 1

n N N------------

N lim=

Pavg =0 1 C

LVdd

2 fclk

•Due to charging and discharging of capacitance

Page 6: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Activity factors of basic gates

• AND

• OR

• XOR

BABA pppp )1(

)]1)(1(1)[1)(1( BABA pppp

)2)](2(1[ BABABABA pppppppp

Page 7: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Dynamic Power dissipation

• Power reduced by reducing Vdd, f, C and also activity• A signal transition can be classified into two categories

a functional transition and a glitch

Page 8: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Glitch Power Dissipation

• Glitches are temporary changes in the value of the output – unnecessary transitions

• They are caused due to the skew in the input signals to a gate

• Glitch power dissipation accounts for 15% – 20 % of the global power

• Basic contributes of hazards to power dissipation are– Hazard generation– Hazard propagation

Page 9: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Glitch Power Dissipation

• P = 1/2 .CL.Vdd . (Vdd – Vmin) ;

Vmin : min voltage swing at the output • Glitch power dissipation is dependent on

– Output load– Input pattern– Input slope

Page 10: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Glitch Power Dissipation

• Hazard generation can be reduced by gate sizing and path balancing techniques

• Hazard propagation can be reduced by using less number of inverters which tend to amplify and propagate glitches

Page 11: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Short Circuit Power Dissipation

• Short circuit current occurs during signal transitions when both the NMOS and PMOS are ON and there is a direct path between Vdd and GND

• Also called crowbar current• Accounts for more than 20% of total power dissipation• As clock frequency increases transitions increase

consequently short circuit power dissipation increases• Can be reduced :

– faster input and slower output

– Vdd <= Vtn + |Vtp|• So both NMOS and PMOS are not on at the same time

Page 12: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Static Power ConsumptionStatic Power Consumption

Vin=5V

Vout

CL

Vdd

Istat

Pstat = P(In=1).Vdd . Istat

• Dominates over dynamic consumption

• Not a function of switching frequencyWasted energy …Should be avoided in almost all cases

Page 13: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Static Power Dissipation

• Power dissipation occurring when device is in standby mode

• As technology scales this becomes significant• Leakage power dissipation• Components:

– Reverse biased p-n junction– Sub threshold leakage– DIBL leakage– Channel punch through– GIDL Leakage– Narrow width effect– Oxide leakage– Hot carrier tunneling effect

Page 14: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Principles for Power Reduction

• Prime choice: Reduce voltage!– Recent years have seen an acceleration in

supply voltage reduction– Design at very low voltages still open

question (0.6 … 0.9 V by 2010!)

• Reduce switching activity

• Reduce physical capacitance– Device Sizing

Page 15: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Factors affecting leakage power

• Temperature– Sub-threshold current increases exponentially

• Reduction in Vt

• Increase in thermal voltage

– BTBT increases due to band gap narrowing– Gate leakage is insensitive to temperature change

Page 16: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Factors affecting leakage power

• Gate oxide thickness– Sub-threshold current decreases in long channel transistors and

increases in short channel– BTBT is insensitive– Gate leakage increases as thickness reduces

Page 17: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Solutions

• MTCMOS• Dual Vt• Dual Vt domino logic• Adaptive Body Bias• Transistor stacking

Page 18: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Metrics

• Power Delay product• Energy Delay Product

– Average energy per instruction x average inter instruction delay

• Cunit_area

– Capacitance per unit area

Page 19: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Conclusion

• Power dissipation is unavoidable especially as technology scales down

• Techniques must be devised to reduce power dissipation• Techniques must be devised to accurately estimate the

power dissipation• Estimation and modeling of the sources of power

dissipation for simulation purposes