Transcript
Page 1: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

EE466: VLSI Design

Power Dissipation

Page 2: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Outline

• Motivation to estimate power dissipation• Sources of power dissipation• Dynamic power dissipation• Static power dissipation• Metrics• Conclusion

Page 3: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Need to estimate power dissipation

Power dissipation affects• Performance • Reliability• Packaging• Cost• Portability

Page 4: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Where Does Power Go in CMOS?

• Dynamic Power Consumption

• Short Circuit Currents

• Leakage

Charging and Discharging Capacitors

Short Circuit Path between Supply Rails during Switching

Leaking diodes and transistors

Page 5: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Node Transition Activity and PowerNode Transition Activity and Power

Consider switching a CMOS gate for N clock cycles

EN CL Vdd 2 n N =

n(N): the number of 0->1 transition in N clock cycles

EN : the energy consumed for N clock cycles

Pavg N lim

ENN-------- fclk

= n N N------------

N lim

CL

Vdd 2

fclk=

0 1

n N N------------

N lim=

Pavg =0 1 C

LVdd

2 fclk

•Due to charging and discharging of capacitance

Page 6: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Activity factors of basic gates

• AND

• OR

• XOR

BABA pppp )1(

)]1)(1(1)[1)(1( BABA pppp

)2)](2(1[ BABABABA pppppppp

Page 7: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Dynamic Power dissipation

• Power reduced by reducing Vdd, f, C and also activity• A signal transition can be classified into two categories

a functional transition and a glitch

Page 8: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Glitch Power Dissipation

• Glitches are temporary changes in the value of the output – unnecessary transitions

• They are caused due to the skew in the input signals to a gate

• Glitch power dissipation accounts for 15% – 20 % of the global power

• Basic contributes of hazards to power dissipation are– Hazard generation– Hazard propagation

Page 9: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Glitch Power Dissipation

• P = 1/2 .CL.Vdd . (Vdd – Vmin) ;

Vmin : min voltage swing at the output • Glitch power dissipation is dependent on

– Output load– Input pattern– Input slope

Page 10: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Glitch Power Dissipation

• Hazard generation can be reduced by gate sizing and path balancing techniques

• Hazard propagation can be reduced by using less number of inverters which tend to amplify and propagate glitches

Page 11: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Short Circuit Power Dissipation

• Short circuit current occurs during signal transitions when both the NMOS and PMOS are ON and there is a direct path between Vdd and GND

• Also called crowbar current• Accounts for more than 20% of total power dissipation• As clock frequency increases transitions increase

consequently short circuit power dissipation increases• Can be reduced :

– faster input and slower output

– Vdd <= Vtn + |Vtp|• So both NMOS and PMOS are not on at the same time

Page 12: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Static Power ConsumptionStatic Power Consumption

Vin=5V

Vout

CL

Vdd

Istat

Pstat = P(In=1).Vdd . Istat

• Dominates over dynamic consumption

• Not a function of switching frequencyWasted energy …Should be avoided in almost all cases

Page 13: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Static Power Dissipation

• Power dissipation occurring when device is in standby mode

• As technology scales this becomes significant• Leakage power dissipation• Components:

– Reverse biased p-n junction– Sub threshold leakage– DIBL leakage– Channel punch through– GIDL Leakage– Narrow width effect– Oxide leakage– Hot carrier tunneling effect

Page 14: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Principles for Power Reduction

• Prime choice: Reduce voltage!– Recent years have seen an acceleration in

supply voltage reduction– Design at very low voltages still open

question (0.6 … 0.9 V by 2010!)

• Reduce switching activity

• Reduce physical capacitance– Device Sizing

Page 15: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Factors affecting leakage power

• Temperature– Sub-threshold current increases exponentially

• Reduction in Vt

• Increase in thermal voltage

– BTBT increases due to band gap narrowing– Gate leakage is insensitive to temperature change

Page 16: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Factors affecting leakage power

• Gate oxide thickness– Sub-threshold current decreases in long channel transistors and

increases in short channel– BTBT is insensitive– Gate leakage increases as thickness reduces

Page 17: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Solutions

• MTCMOS• Dual Vt• Dual Vt domino logic• Adaptive Body Bias• Transistor stacking

Page 18: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Metrics

• Power Delay product• Energy Delay Product

– Average energy per instruction x average inter instruction delay

• Cunit_area

– Capacitance per unit area

Page 19: EE466: VLSI Design Power Dissipation. Outline Motivation to estimate power dissipation Sources of power dissipation Dynamic power dissipation Static power

Conclusion

• Power dissipation is unavoidable especially as technology scales down

• Techniques must be devised to reduce power dissipation• Techniques must be devised to accurately estimate the

power dissipation• Estimation and modeling of the sources of power

dissipation for simulation purposes


Top Related