Fundamental Semiconductor Engineering

Chapter 04

Conduction of Semiconductor

5.1 -

* * l V * (drift velocity)

( : mobility)

5.1 - * ( : mean free path) * ( : mean free time) - [m], [m2], [A/m2] R * * * ( : resistivity) [cm] ( : conductivity) (Joule)

5.2 - (drift) * : [m2/Vs]

5.2 - (T 300[K]) Ge Si GaAs GaP InSb CdS [m2/Vs] [m2/Vs] 0.39 0.142 0.80 0.011 0.46 0.030 0.19 0.05 0.04 0.0075 0.015 0.0050

5.3 - : , * * *

5.4 5.4.1 - * *

5.4 - - - , 1016 [cm 3] * * *

5.4 - -

5.5 5.5.1

- * * T3/2, T 3/2 * * * ,

5.5 5.5.1 -

5.6 (Hall) - (hall effect) , . * , B

5.6 (Hall) - (hall effect) , .

eEz evdB 0 Ez -vdB VH -aEz vdaB Jp pevd, i Jpad peadvd

5.7 - ( : diffusion)* *

5.7 - ( : diffusion)* * * (diffusion current) ,

5.8 - ( ) - ( ) *

* ( ) * [ /cm3s] - ( : recombination)

* * ,

5.8 - * (band to band)

-

5.8 -

5.9 - -

5.9 1. -

5.10 -

5.10 - * , , *

5.10 - *

5.11 1.

5.11 2. N - N * N *

5.11 3. P - - P