the electronic structures of 2d atomically uniform thin film s.- j. tang, t. miller, and t.-c....
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The electronic structures of 2D atomically
uniform thin film
S.- J. Tang, T. Miller, and T.-C. ChiangDepartment of Physics, University of Illinois at Urbana-
Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080
Surface state and Quantum well state
Surface
Thin Film
Vacuum
Vacuum
Substrate
SS
SSqw
Photoemission
Re d uc e d wa ve ve c to r
Va le nc e b a nd
C o n d uc tio n b a n d
Ef
Ev
EF
Ei
Ele
ctr
on
En
erg
y
Excited electron and hole states
Excited hole state
Excited electron state (photoelectron)
Photon
(Final)
(Initial)
Work function
Ef –Ei = Ek +e = Ei+
k
One particle picture to many body effect
Many body interaction
Spectral function 220 ),(Im),(Re)(
),(Im),(
kkk
kkA
Spectra function in the form of a Lorentzian
I ~
Photoemission intensity
Quasi particle One state -----> One single Lorentzian peak
Quantum well states
Nt
EEnk is
2
)()(2
)( kEEn
Bohr-Sommerfeld quantization rule
n: Quantum number, 1,2,3,..
: interface phase shift
Nt: thickness
Ph
oto
em
issi
on
inte
nsi
ty (
arb
. u
nits
)
-3 -2 -1 0Energy (eV)
4
6
8
10
13
17
23
25
27
36
42
Ag/Ge(111)
(ML)
Normal emission
qws
ss
All the information of substrate bands are embedded in i
Quantum size effect
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
Bin
ding
Ene
rgy
(eV
)
0.100.00-0.10k||(Å
-1)
n=1
n=2
n=3
n=4
15 ML 16 ML
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
Bin
ding
Ene
rgy
(eV
)
1.31.21.11.00.9kperpendicular(Å
-1)
Ag bulk band perpendicular to the surface
Ag qws bands parallel to the surface, which
are normally similar to the corresponding
bulk band dispersions
Atomically uniform film revealed by photoemission
qws peak
1 ML 1.5 ML
1 ML
qws peak
1 ML 2 ML
Atomically uniform + quantum size effect
Thickness changes (uniform films)
The allowed quantized k’s changes
The energy positions of the QWS changes
Properties of films change
Surface energy, work function, thermal stability, adsorption, superconductivity transition temperature, magnetic interlayer coupling……….
J. J. Paggel, T. Miller, and T.-C. Chiang, Phys. Rev. Lett.81, 5632 (1998); Science 283, 1709 (1999)
Substrate effect
Substrate
Thin film
My three major findings on substrate effect 1. Many body interaction between the quantum well
state and substrate state
Kink dispersion S.-J. Tang, L. Basile, T. Miller, and T.-C. Chiang, Phys. Rev. Lett. 93, 216804 (2004)
2. Strong hybridization between the surface state and substrate bands
Display of HH,LH and SO
major substrate bands
S.-J. Tang, T. Miller, and T.-C. Chiang, Phys. Rev. Lett. 96, 036802 (2006).
3. Diffraction from the substrate surface
QWS of second kind
S.-J. Tang, Y. R. Lee, S. -L. Chang, T. Miller, and T. -C. Chiang, Phys. Rev. Lett. 96, 216803 (2006)
Surface Brillouin zone for Ag(111) and Ge(111)
M
K M
'M
G
K K
KK
K
'M
M
M
'M
The band structures of atomically uniform thin film of Ag/Ge(111)
21 ML ss QW 1 2 3 4 5
K M
Band dispersions of Ag/Ge(111)
Two types of splitting !!
KinkDramatic linewidth change of QWS across substrate band edge
Layer resolutionThe band structures of QWS in 8.6 ML are equal to the linear combination of 8ML and 9ML.
Emission Angle ()
ss QW n= 1.2 …
Type 2
Type 1
Atomically uniform filmAg/ Ge(111)
Atomically Uniform Film
1. moving discretely from its 8 ML ( 9 ML) position to the 9 ML (10 ML) position.
2. The 8ML (9ML) peak is absent in the 9ML (10ML) spectrum and vice vesra.
Quantum well peak
Non quasiparticle behavior
The two-peak line shape across the substrate band edge is non quasiparticle
2/1
0
2
1Im
1Im
1
sqq iEEVAiEEGE
dgiE
ViEEEG
E
sqq
0
21
0
0
EE
Ag
One dimensional form of the density of the states for the substrate band edge
Spectral function
Retarded Green function for a single electron state entering into the bulk band continuum.
Surface state
2D electron state residing on or near the surface
The product of reduced symmetry
)cos()( pzez qz
iqpk
Nt1/q
When 1/q NtDecay length Thickness
Substrate
film
Vacuum
Something interesting happens !!!
Surface state touches down to the substrate
The anomalous lineshape of the surface state at
lower thickness P
hoto
emis
sion
Inte
nsity
(A
rb. U
nits
)
-3 -2 -1 0Energy (eV)
6 ML
7 ML
8 ML
9 ML
10 ML
hv = 50 eV
Thickness dependence SS
QWn = 1
n = 2
Ph
oto
em
issi
on
In
ten
sity
(A
rb.
Un
its)
-3 -2 -1 0 Energy (eV)
9 eV
22 eV
50 eV
Thickness 6ML
Photon energy dependence SS
QWn = 1
Ag/Ge(111), Normal emission
Quantum well state ? Substrate state ?
Thickness dependence of the surface state dispersion
Decay length of Ag surface state 12ML
Surface state energy shifts with the thickness
VtE )(
)2exp()0( tE
New finding !!!
Emission Angle ()
T. C. Hsieh, T. Miller, and T. C. Chiang, Phys. Rev. Lett. 55, 2483 (1985)
11.7
Thickness dependence of the surface state dispersion
Strong hybridization between the surface state and substrate states makes the photoemission intensity proportional to the density of states for substrate bands
2 2
SI E E E g E M g E
3
1
i
i i i
Ag E
E E E E
Three major Ge bands of HH , LH and SO cross this area
Emission Angle ()
Fitting the data with the model
(a)
(b)
(c)
(a)
(b)
(c)
Fitting result from the model
Image processed
Comparison with the calculated Ge bands and other measurements
En
erg
y (
eV
)
-0.6
-0.4
-0.2
0.0
k|| (Å-1)
-0.2 -0.1 0.0 0.1 0.2
En
erg
y (
eV
)
-0.6
-0.4
-0.2
0.0
(a)
Theory Expt
Expt
(b)
HH
LH
SO
HH LH SO Expt
Cyclotron measurements
0.30 0.034 0.21
0.33 0.043 0.095
Effective Mass
Spin-orbital Splitting
Expt 0.301 eV
0.296 eV Optical measurements
Quantum well state of the second kind
M (Ge)
Ag bulk bands projected to (111) direction
Surface Brillouin zone for Ag(111) and Ge(111)
M
K M
'M
G
K K
KK
K
'M
M
M
'M
Vacuum
Substrate
(k||,k) (k||,-k) (0,-k) (0,k) (-k||,k)(-k||,-k)
First Kind
The Ge substrate working as a diffraction grating
),( kk
M
GKKMM
MKG
2
Vacuum
),( kkM
),( kk
M),( kkM
1 2 3 4
Second Kind
Generalized Bohr-Sommerfeld quantization rule
,d= Nt , t=2.36 Å for 1ML of Ag in (111) direction
4,3,2,1,2*)( 4321 nndkkkk
ndEkEkEkEk 2*))()()()(( 4321
ndEK NEW 2*)(
Due to energy conservation
ndEkEkEkEk 2*))()()()(( 44332211
Hybridization between qws of the first kind and qws of the second kind
Thickness dependence of hybridization between two different kinds of quantum well
states
9MLbands and bands anti-cross interactions
'4
3
2
1
5
4
3
2
1
000
000
000
000
0000
0000
0000
0000
0000
ˆ
EVVVVV
EVVVVV
EVVVVV
EVVVVV
VVVVE
VVVVE
VVVVE
VVVVE
VVVVE
H
V (d) = ?
Relationship between quantum well state and surface state from 5 ML
down to 1ML
Pho
toem
issi
on In
tens
ity (
Arb
. Uni
ts)
-3 -2 -1 0Energy (eV)
Ge(111)
2x8
1 ML1 ML
5 ML
4 ML
3 ML
2 ML
hv = 50 eV, NE
Ag/Ge(111)
QWS
SS
QWS +SS ?
Second kind of quantum well from 5ML down 1ML
Substrate is the key
Doping effect on the quantum well states
e-
e-
Lightly doped n type substrate
Heavily doped n type substrate
film
Depleting areafilm
Electronic Fringe Structure in Silver Films on Highly Doped Silicon, N. J. Speer,S. -J. Tang, T. Miller, and T.-C. Chiang*, recently accepted by Science.
Atomically uniform film+ quantum size effect + substrate
effect
High Tc
Magnetism
bulk film
Substrate
Future research plan
Photoemission1. Investigate the temperature dependence of the surface states,
energy shift and electron-phonon coupling, on the metal surfaces like Be , Be , Al(100), Al (110) surfaces. The central idea is to study the interplay between the electron structures and lattice structures on the surfaces.
2. Investigate the structures and behavior of surface states and film states (quantum well states) in an atomically uniform thin filmfor various systems like Ag/Ge(111), Pb/Ge(111), Co/Ge(111) and Ag/Cr(100).
3. Study the electronic structure of quantum wire, quantum dots, nanotubes and complex materials.
)0110( )0211(
Future research planLow energy electron microscopy (LEEM)
1. Study the surface morphology of metal surface or metal cluster. (Time dependence and Temperature dependence) example Cr(100)
Sublimation of Atomic Layers from a Chromium Surface, S. -J. Tang, S. Kodambaka, W. Swiech, I. Petrov, T. -C. Chiang, Phys. Rev. Lett., in press.
2. Study the quantum size effect of metal thin film ( the intensity of the islands oscillates with electron energy) example Ag/Cr(100)
445 C
467 C
1 HOUR LATER
Ag/Cr(100)
7.5 eV 16.7 eV
38.5 eV 51.5 eV
Ag/Cr(100)
I V curve300
250
200
150
100
50
Inte
nist
y (
arb.
uni
ts)
5040302010Energy (eV)
Ag island
IV curve
qwsqws
qws
Surface Superconductivity on )0110(Be
22)0( MIN
)62.01(
)1(04.1exp45.1
DCBTk
Bulk Be =0.24 , Tc = 0.024 K
=0.646 , Tc = 17 K )0110(Be Localized S1 stateSmall coherence length
)2/( CBF Tk
HTSC Dominant e-p coupling with 50-80 meV optical phonon
MgB21. Light atoms
2. covalent like sp B-B bonding with DOS at Fermi level
3. Dominant coupling with in-plane B-B vibration phonon about 64 meV
Back bonding model rehybridzation of broken surface bonds
Hybridization between
S2 and SR states
SR S2
Charge density distribution of SR and S2
on (0010) cut plane
1
4
5
89
12
S and Pz type Py type
(J-H Cho )
Back bonding model rehybridzation of broken surface bonds
Hybridization between
S2 and SR states
SR S2
Charge density distribution of SR and S2
on (0010) cut plane
1
4
5
89
12
S and Pz type Py type
(J-H Cho )
k
k
M
M
'M
'M
Inversion symmetry
G