the dynamic behaviour of resistive plate chambers

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The dynamic behaviour of Resistive Plate Chambers Presented by Marcello Abbrescia University and INFN - Bari - Italy VII Workshop on Resistive Plate Chambers and related detectors Clermont-Ferrand FRANCE October 20-22, 2003

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The dynamic behaviour of Resistive Plate Chambers. Presented by Marcello Abbrescia University and INFN - Bari - Italy. VII Workshop on Resistive Plate Chambers and related detectors. Clermont-Ferrand FRANCE October 20-22, 2003. x sat. Exponential growth. Saturation. . “Drift”. - PowerPoint PPT Presentation

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Page 1: The dynamic behaviour of Resistive Plate Chambers

The dynamic behaviour of Resistive Plate Chambers

The dynamic behaviour of Resistive Plate Chambers

Presented by

Marcello Abbrescia University and INFN - Bari - Italy

VII Workshop on Resistive Plate Chambers and related detectors

Clermont-Ferrand FRANCEOctober 20-22, 2003

Page 2: The dynamic behaviour of Resistive Plate Chambers

The story up to nowThe story up to now

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

satsat

wxx

we

ind xg

xgVMeMnV

g

qq sat

10

0

Exponential growth Drift

Exponential growthxsat

Saturation

“Drift”

Many quantities in the formula above are themselves stochastic variables.

The induced charge is the “convolution” of all these variables.A Monte Carlo rather elaborated

Page 3: The dynamic behaviour of Resistive Plate Chambers

When saturation does not playWhen saturation does not play

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

Gap: 2 mm

Gap: 9 mm

Charge Spectra shape: these are the most fundamental information you can get

1

Rqqind

Comparison between Monte-Carlo predictions and experimental data

Freon rich mixture

Argon rich mixture

: primary cluster density (from 3 to 5 cl/mm): 1st Townsend “effective” coefficient

Page 4: The dynamic behaviour of Resistive Plate Chambers

...and when saturation becomes important...and when saturation becomes important

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

HV=9.2 kV

SimulationExperiment

Experimental data from Camarri et al., NIM A 414 (1998) 317-324

Gas mixture: C2H2F4/C4H10 97/3 + SF6 2%Input for simulation: Colucci et al., NIM A 425 (1999) 84-91

This is not a fit!

Page 5: The dynamic behaviour of Resistive Plate Chambers

...and when saturation becomes important...and when saturation becomes important

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

HV=9.4 kV

SimulationExperiment

Experimental data from Camarri et al., NIM A 414 (1998) 317-324

Gas mixture: C2H2F4/C4H10 97/3 + SF6 2%Input for simulation: Colucci et al., NIM A 425 (1999) 84-91

This is not a fit!

Page 6: The dynamic behaviour of Resistive Plate Chambers

...and when saturation becomes important...and when saturation becomes important

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

HV=9.5 kV

SimulationExperiment

Experimental data from Camarri et al., NIM A 414 (1998) 317-324

Gas mixture: C2H2F4/C4H10 97/3 + SF6 2%Input for simulation: Colucci et al., NIM A 425 (1999) 84-91

Inefficiency peak Saturation

broad peak

This is not a fit!

Page 7: The dynamic behaviour of Resistive Plate Chambers

...and when saturation becomes important...and when saturation becomes important

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

HV=9.7 kV

SimulationExperiment

Experimental data from Camarri et al., NIM A 414 (1998) 317-324

Gas mixture: C2H2F4/C4H10 97/3 + SF6 2%Input for simulation: Colucci et al., NIM A 425 (1999) 84-91

Inefficiency peak

Saturation broad peak

This is not a fit!

Page 8: The dynamic behaviour of Resistive Plate Chambers

...and when saturation becomes important...and when saturation becomes important

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

HV=9.9 kV

SimulationExperiment

Experimental data from Camarri et al., NIM A 414 (1998) 317-324

Gas mixture: C2H2F4/C4H10 97/3 + SF6 2%Input for simulation: Colucci et al., NIM A 425 (1999) 84-91

Inefficiency peak

Saturation broad peak

This is not a fit!

Page 9: The dynamic behaviour of Resistive Plate Chambers

...and when saturation becomes important...and when saturation becomes important

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

HV=10.1 kV

SimulationExperiment

Experimental data from Camarri et al., NIM A 414 (1998) 317-324

Gas mixture: C2H2F4/C4H10 97/3 + SF6 2%Input for simulation: Colucci et al., NIM A 425 (1999) 84-91

Inefficiency peak

Saturation broad peak

This is not a fit!

Page 10: The dynamic behaviour of Resistive Plate Chambers

The “single cell” modelThe “single cell” model

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

None of the simulations up to now take into account the

role of the bakelite resistivity ... we could be simulating metal or insulating electrodes

g

bCCR rbgbb 2222 0

g

bCCR rbgbb 2222 0

Recovery time independent of the cell dimension ...

Cg

RbCb

A few numbers:

typical avalanche radius: 100 mtypical avalanche charge: 1 pCtypical external charge contained in 100 m: 10 pC

Page 11: The dynamic behaviour of Resistive Plate Chambers

What happens in the “single cell”What happens in the “single cell”

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

Applied HV

High HV “at start”

Big pulses

cl

d

n

jj

jtvedind Mneqti

10)(

wEv

t

ext eHVtHV 1)(

=1500 ms

There is a sort of feedback ...

Area of the cell = 1 mm2

5 10 11 cm

=20 Hz

Page 12: The dynamic behaviour of Resistive Plate Chambers

Effective HV vs. rateEffective HV vs. rate

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

Applied HV

10 Hz

13 Hz

20 Hz

The effective HV diminishes and its distribution is broader.

(...until HVeff is too low)

Two consequences:•lower HV at high rate•greater HV variations at high rate

Page 13: The dynamic behaviour of Resistive Plate Chambers

Efficiency vs. rateEfficiency vs. rate

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

From C. Bacci et al., NIM A 352(1995) 552-556

Experiment

Simulation

4 1010 cm

8 1010 cm

Cut-off rate of the experimental efficiency well simulated: slightly higher value of resistivity needed (significant?)

Page 14: The dynamic behaviour of Resistive Plate Chambers

Rate capability dependancesRate capability dependances

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

HV=10100 V

HV=9800 V

HV=9600 V

HV=9200 V

independent of applied voltage

4 1011 cm

1012 cm

8 1010 cm

1011 cm

strongly dependent on resistivityTrue in the “single cell” model only

Cut-off rate

4 1011 cm HV=10100 V

Page 15: The dynamic behaviour of Resistive Plate Chambers

Rate capability in streamer modeRate capability in streamer mode

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

From R. Arnaldi et al., NIM A 456(2000) 73-76

Exp. streamer

Exp. avalanche

Simulation streamer

Streamer charge distribution has been simulated also by “artificially” multiplying by 10 both avalanche charge, and area on the electrodes.

Cut off rate reproduced also in the streamer case.

8 1010 cm

Efficiency rate dependance different.

Page 16: The dynamic behaviour of Resistive Plate Chambers

Efficiency vs. HV and rateEfficiency vs. HV and rate

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

Data from G. Aielli et al., NIM A 478(2002) 271-276

Simulation

Experimental

~ 1.5 kHz/cm2

~ 2 Hz/cm2 Very good agreement

At high rate the shape of the simulated efficiency curve seem to change and differ from the experimental one.

1ln

1

1 A

qg thr

e

g

MnVqA we

0

Page 17: The dynamic behaviour of Resistive Plate Chambers

Time resolutionTime resolution

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

Data from C. Bacci et al., NIM A 352(1995) 552-556

0.2 kHz/cm2

=0.9 ns 1 kHz/cm2

=1.2 ns 4 kHz/cm2

=1.6 ns

Simulated Experimental

General behaviour well reproduced ... Simulated time resolutions slightly less than experimental.

1. Systematics on drift velocity2. “Instrumental” effects not reproducedPossible Reasons

Page 18: The dynamic behaviour of Resistive Plate Chambers

Time delay and resolution vs. rateTime delay and resolution vs. rate

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

Experimental (arbitary zero)

Simulation (absolute scale) Experimental Simulation

Time Delay Time resolution

4 ns3.8 ns

The absolute scale of the simulation refers to the passage of the ionising particle.

75.1

2/

2/

2.0

4

cmkHzt

cmkHzt

77.1

2/

2/

2.0

4

cmkHzt

cmkHzt

Page 19: The dynamic behaviour of Resistive Plate Chambers

The future: The multi cell modelThe future: The multi cell model

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

The area of the inefficiency cell increases as the bakelite surface resistivity decreases.

vol

sup

“large” “small”vol

sup

avalanche

“Surface” coupling resistors

Cg

RbCb

Rs,b

The net results is that the current flows not only in the “central” cell, but also in the neighbouring ones.

Page 20: The dynamic behaviour of Resistive Plate Chambers

ConclusionsConclusions

RPC 2003 Clermont-Ferrand October 20th, 2003RPC 2003 Clermont-Ferrand October 20th, 2003

Marcello Abbrescia - University of BariMarcello Abbrescia - University of Bari

Even the single cell model reproduces well the efficiency and time resolution vs. rate.

The role of resistivity and collected charge seems to be clear.

Charge spectra are well understood.

Slight differences remain, both for the “static” and the “dynamic” case ... could be due to• uncertainty in gas (and other) parameters.• possible refinements of the model.

It is the first time the role of resistivity is taken into account in simulation of Resistive Plate Chambers ... The model of the dry water becomes wet.