strengthening the leadership - asml · pdf file/ slide 1 asml at semicon west 2005...

ASML at SEMICON West 2005 / Slide 1

Strengthening the leadership

Press conference, SEMICON West 2005Martin van den Brink, Executive Vice President ASML


Safe Harbor

“Safe Harbor” Statement under the U.S. Private Securities Litigation Reform Act of 1995: the matters discussed in this document may include forward-looking statements that are subject to risks and uncertainties including, but not limited to: economic conditions, product demand and semiconductor equipment industry capacity, worldwide demand and manufacturing capacity utilization for semiconductors (the principal product of our customer base), competitive products and pricing, manufacturing efficiencies, new product development, ability to enforce patents, the outcome of intellectual property litigation, availability of raw materials and critical manufacturing equipment, trade environment, and other risks indicated in the risk factors included in ASML’s Annual Report on Form 20-F and other filings with the U.S. Securities and Exchange Commission.


Contents

ASML: Technology and Market leadership

ASML immersion: Leading the world in the transition from dry to wet

Another first: The highest NA at full field in the industry


ASML’s position in the industry

Technology leadership

Market share leadership

Value of OwnershipLeadership

Best in execution:

Profitability for ASML and its

customers


Market share through technology

Source: ASML

ASM

L M

arke

t Sha

re ($

)

0%

10%

20%

30%

40%

50%

60%

12” & ArF

6” & early i-line

KrF &Step & Scan

8” & I-line

1984 1986 1988 1990 1992 1994 1996 1998 2000 2002 2004

• Reliable introduction

• Robust production

• Cost effective


Market share evaluationASML #1 for 3rd year in a row

Source: ASML

ASM

L M

arke

t Sha

re ($

)

0%

10%

20%

30%

40%

50%

60%

1984 1986 1988 1990 1992 1994 1996 1998 2000 2002 2004

202004 2004 results:

• >50% revenue and >40% unit shipments

• #1 in 200mm, 300mm, KrF and ArF

• #1 in all regions except Japan


Contents

ASML: Technology and market leader




Q4 200

3Q1 2

004

Q1 200

6

Q2 200

4Q3 2

004

Q4 200

4Q1 2

005

Q2 200

5Q3 20

05Q4 2

005

1st image on AT:1150i

16 customers test AT:1150i

1st XT:1250i

1st immersion Chips

1st XT:1400i

AT:1150i shipped to Albany1st generation

2nd generation

3rd generation

Leading the world in the transition from dry to wet


Dual Stage TWINSCAN platform:Measure dry/expose wet in parallel at 122 wph

Immersion shower head:Water containment under all process conditions

Field immersion experience:Since September 2004 over 3 equipment generations

Three unique advantages of ASML immersion


Dual Stage TWINSCAN platform

Immersion exposure

Immersion shower head

Dry alignmentDry wafer mapping(focus & levelling)


Dual Stage TWINSCAN platformMeasure dry/expose wet in parallel at 122 wph

Expose PositionAlign

Metrology PositionUnload

LensLensFocus

Load

Time Line for 1 Wafer Cycle single immersion stage

Load Dry Metrology Expose Unload

Metrology PositionExpose Position

O O

Wet/drychange

Dry focus: additional wetsingle stage overhead

1 Wafer Cycle with dual immersion stage

Swap Time Line for 1 Wafer Cycle Expose

Unload Load Dry Metrology

O O


Overlay

Productivity

Defects

Containment

Of

WaterMinimize

evaporation

Prevent

Drying stains

Maximize

scan speed

Immersion shower head design principles


For hydrophilic* materials water is only partly confinedMeniscus becomes unstable limiting scan speedDroplets are left on the wafer

Immersion shower head design

lensLenslensLensLens

*Water likes to stick to it




For hydrophobic* materials the free meniscus is stable even at high scan speed, however

Droplets are left on the wafer

*water easily rolls off




Lowering the immersion hood enabled by using a servo controlled gap control stabilizes the meniscus for all materials

Supports accurate wafer positioning during scanningBut droplets are still left behind

S S




S S

To contain water at full scan speed and also confine droplets an air curtain is introduced:

no water droplets left on the wafer

Immersion shower head works with all materials


Immersion shower head: Maximum process choice for customers

Supports hydrophilic and –phobic materialstandard ArF resists and developer solvable top coats

Minimizing impact on track process flow

track modules BARC Coat Develop TARC TC remove

total

dry process3 3 5 11

immersion resist w/o topcoat 3 3 5 11

dry resist with developer soluble topcoat 3 3 5 3 14

dry resist with hydrophobic topcoat 3 3 5 3 3 17


7 ASML immersion tools installed worldwide

7 systems shipped until end Q2-05 a mix of 1150i, 1250i and 1400i

3 2

2


Wet

Dry

0.0 0.1 0.2 0.3 0.4-0.1-0.3 -0.2

Focus (µm)

-0.4

65nm 1:1 L&S through focus, annular NA=0.93 sigma 0.94/0.74

3rd generation tool XT:1400i has been shipped


Excellent immersion overlay

0

2

4

6

8

10

1 2 3 4 5 6 7 8 9wafer number

nmXY

12


Dramatic improvements in immersion defect levelsdefect count wet equals dry by end 2005

0.01

0.1

1

10

100

Q1 200

4Q2 2

004

Q3 200

4Q4 2

004

Q1 200

5Q2 2

005

Q3 200

5Q4 2

005

defe

cts/

cm2 processed wafers

bare wafers

dry baseline


Contents

ASML: Technology and market leader




Q4 200

3Q1 2

004

Q1 200

6

Q2 200

4Q3 2

004

Q4 200

4Q1 2

005

Q2 200

5Q3 20

05Q4 2

005

1st image on AT:1150i

16 customers test AT:1150i

1st XT:1250i

1st immersion chips

1st XT:1400i

AT:1150i shipped to Albany

Leading the world in the transition from dry to wet

1st generation

2nd generation

3rd generationXT:1700i4th generation


Introducing TWINSCAN™ XT:1700i: New features

Illuminator with increased σ rangeand polarization

4th generation immersion tool

Catadioptric lens design with 1.2 NA at

26 x 33mm field

122wph dual stage immersion TP

45nm volume production


Hyper NA lens: in-line catadioptric design type

40% less material and 15% more NA compared to refractive designs

Rectangular scan field supporting focus drilling and maximum productivity

Same image orientation as refractive lenses: reticle compatibility

Small incidence angles on coatings compared to folded designs allowing extendibility to higher apertures > 1.3

High mechanical stability like refractive designs


Hyper NA lens: Polarization to maximize contrast

Polarizationimproves image contrast and exposure latitudeenhances resolution with 5 nm

Half pitch [nm]

00.20.40.60.8

11.2

35 45 55 65 75 85 95

Con

tras

t

UnpolarizedPolarized

Constructive interference100% contrast


55nm Combined Polarization and Immersion boostDOF above 1 micron!

F = 0 nmF = -525 nm F = 525 nmF = -225 nm F = 225 nm

F = 240 nmF = 0 nmF = -240 nm

Dry: DoF 480nm

Wet: DoF 1100nm

NA = 0.93,Dipole-35degσ=0.97/0.81X-polarizationk1=0.265


XT:1700i for 45nm Volume Production

Full resist model 6% att-PSM Mask with Polarized Dipole illumination± 2% dose error, 2nm mask error, ±10% CD variation limit

Polarized Dipole Illumination

1:1 Dense Linesusing 6% att-PSM0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

40 45 50 55 60 65 70Resolution half-pitch [nm]

Dep

th o

f Foc

us [µm

]

1.2 NA1.2 NA

1.0 NA1.0 NA

1.07 NA1.07 NA

0.93 NA0.93 NA


TWINSCAN™ 300mm throughput advantage

Updated june 1

0

20

40

60

80

100

120

140

2004 2006

Thro

ughp

ut (W

PH)

DryImmersion

2003 2005


Summary

XT:1700i

Highest NA in the industry: 1.2

Volume production at 45 nm with 122 wph

Maximum field size of 26mm by 33mm

Fourth generation immersion tool

strengthening the leadership - asml · pdf file/ slide 1 asml at semicon west 2005...

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