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RF and SOI Technologies for 5G Kirk Ouellette VP, World Wide Strategy Development and Strategic Marketing RFSOI conference, SOI Consortium, Shanghai September 19, 2018

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Page 1: RF and SOI technologies for 5G deployment version for release2soiconsortium.eu/wp-content/uploads/2018/08/RF-and...• A global semiconductor leader • 2017 revenues of $8.35B with

RF and SOI Technologies for 5GKirk Ouellette

VP, World Wide Strategy Development and Strategic Marketing

RFSOI conference, SOI Consortium, Shanghai

September 19, 2018

Page 2: RF and SOI technologies for 5G deployment version for release2soiconsortium.eu/wp-content/uploads/2018/08/RF-and...• A global semiconductor leader • 2017 revenues of $8.35B with

Agenda• Introduction

• 5G Disruption – the need for new technologies

• ST Technologies for 5G – focus on mmWave

• 5G Roll-out - Other Innovative products from ST

2

Page 3: RF and SOI technologies for 5G deployment version for release2soiconsortium.eu/wp-content/uploads/2018/08/RF-and...• A global semiconductor leader • 2017 revenues of $8.35B with

Who We Are 3

Front-End

Back-End

Research & Development

Main Sales & Marketing

As of December 31, 2017

• Approximately 45,500 employees worldwide

• Approximately 7,400 people working in R&D

• 11 manufacturing sites

• Over 80 sales & marketing offices

• A global semiconductor leader

• 2017 revenues of $8.35B with year-on-year growth of 19.7%

• Listed: NYSE, Euronext Paris and Borsa Italiana, Milan

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Coexistence with LPWAN technologies for low bandwidth IoT applications

5G : a Game Changerwith New Services Capabilities

4

Massive

Internet of Things

Smart Home, Smart City

Smart Industry, Smart Things

Massive Machine Type Communication

mMTC

User experience continuity

& Security

Exploding Data Demand

Improved mobility

Enhanced security

Enhanced Mobile Broadband

eMBB

Mission critical

applications

Autonomous driving, V2X, public safety

factory automation, eHealth

Ultra Reliable & Low Latency Communications

URLLC

LTE-M NB-IOT

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Increase frequency/number of 5G bands are complementary 5

…but adds greater complexityABI Research 2018

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The 5G Disruption 6

Very high data rate – x100*

Reduced latency – 5 times lower *

Very high reliability – 99,999%

Connections of millions of nodes

Improved coverage

New architecture with denser

network (small cells)

New technologies: Advanced

beam forming, massive MiMo

New spectrum: Use of millimeter

waves

Higher silicon integration

Improved RF performance

Enhanced power efficiency

Cost-optimized solutions

What it brings to the end users

What is changing in the infrastructure

What is required from microelectronics

* vs 4G

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A unique portfolio of

differentiated technologies

11 manufacturing sites

Advanced R&D centers

around the globe

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5G Networks Will Have More Cell Coverage

8

From base stations to connected devices via a myriad of small cells

ST is #2 for MCU for Smart Thingsover 2 Billion 32bits STM32 sold

ST has a unique broad portfolio for IoTSensors, MCU, connectivity, security, power management

Higher integration

Base stations Small cells Connected Devices

With continual new tech development and

manufacturing ST is a desirable partner for

5G infrastructure

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Semi Content in Base Stations – RF is key 9

OTN Backhaul Box

RF TRX and PA box

Power SupplyDistribution

UPS battery pack

Antenna Elements RFFEM

Network BTS 900-1600 MHz

Switching to OTN

Power SupplyCabinet

Base StationCabinet

14%

18%

14%18%

9%

1%

26%

RF: 1/3 of the

entire value, and

increasing

High performance

analog and silicon

photonics

Power,

discrete and

sensors

Digital

• High performance analog (including photonics) and RF represents the large majority of the semiconductor value

• The weight of RF/Analog content will continue to grow as new RF bands are introduced

Semiconductor content estimation. Small cells + BTS

by technology segment 2021

5G Phase II

mmWave roll-out

2021 and beyond

Source: https://www.extremetech.com/extreme/158342-a-rare-look-inside-an-lte-cell-site-operated-by-sprint-in-san-francisco

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ST PortfolioPer infrastructure type

10

Satellite

communication

• mmW receivers, transmitters, beamformers, synthesizers & RF Front-End

• Digital and mixed signal design, microcontrollers

• SiGe BiCMOS

• FD-SOI

• CMOS for RFTE

CH

NO

Wireless

infrastructure

• mmW receivers, transmitters, synthesizers and RF Front-End

• Digital and mixed signal design beamformers

• Signal conditioning, power & protection, microcontrollers

• SiGe BiCMOS

• RFSOI & GAN (with MACOM)

• FD-SOI

• CMOS for RF

• Si-Photonics PIC50-200/400G

TE

CH

NO

Wired

infrastructure

• Digital and mixed signal design.

• Signal conditioning, power & protection, microcontrollers, security

• FD-SOI

• FinFET designTE

CH

NO

Cloud and

Datacom

• Digital and mixed signal design

• Signal conditioning, power & protection, microcontrollers

• FD-SOI

• FinFET design

TE

CH

NO

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Residential

Building

FrontHaul Fixed Wireless To the Home

Small Cell

~100m~500m

LoS

NLoS

Repeater

Base Station User Equipment

5G Mobility

5G mmW Network Infrastructurefor Fixed Wireless & Mobile Access

Disruptive technologies

1. New Radio (NR) mmW for more spectrum

2. Flat Panel Phase Array Antenna3. Beamforming

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Today`s Wide range of mmW RF TEchnologiesto address 5G systems diversity

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RF mmW

FDSOI for Mixed SoC & Digital Integration � Already used for chipsets in Ku & Ka-Band SatCom solutions� Wide 28nm IP portfolio : PA, LNA, DAC, ADC, Serdes, Phase shifter, RF PLL, etc…

BiCMOS 9MW for Best mm2 cost� Proven mmW Design Platform with optimized libraries� Already used for chipsets in terrestrial backhaul solutions � Wide IP portfolio available : PA, LNA, Phase Shifter, Mixer etc…

RFSOI(H9SOI) for ultimate RFFE perf.� Low Insertion Loss mmW Switch integration� Ultra low noise LNA for mobile phone� 8inch wafer

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SiGe – B9MW moving to 300mm - B55 13

Proven & solid Technology family:BiCMOS6G, BiCMOS7RF, BiCMO9MW, BiCMOS55

Future ProofBiCMOS055 (B55) is BEST IN CLASS

• THE ONLY high-speed BiCMOS technology • in 55-nm CMOS • fabricated in 300-mm manufacturing facility

B55 - One of the few technologies to fit requirements

of 100G/400G optics today

B55 - Well suited to meet the high performance needs of

mmWave 5G RF

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ST SOI Roadmap

60 GHz

Dig

ital d

ensi

ty

F

H9SOIFEMRF FEM

Switch, LNA, PA

C28FDSOI -> 22FDXSOC : Digital, Analog, RF integration

6 GHz

In production MAT30

Next step to address above-6GHz 5G RF applications

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C65SOIFEMRF FEM + RF control

Switch ,LNA, PA Possible extension to TRX

2.5 GHz

Complementary offer with ST SOI + BiCMOS SiGe processes

NEW!PerformanceImprovement

Extension to mmW frequencies

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C65SOIFEM Process Overview• Combination of C65RF and C65PDSOI previous MP processes

• Simplified Flow

• No compromise with RF performances to cover 5G Frequency range• PMOS and NMOS 65nm 1.2V GO1 (Ft around 200 GHz)

• drives LNA performances

• Dedicated 2.5V GO2 RF MOS • best RF Switch performances

• Full coper back-end• 5 Metal with thick coper to improve passives quality and minimize matching losses

• 2 different SOI substrates supported• High Resistivity (HR) for Receiver application • Trap Rich (TR) for Transmitter application requesting low Harmonics

15

New

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Flexible Architecture PartitioningThrough Differentiated Technologies

16

DBF• Up/down converters

• AD / DA Converters

• Digital Beamformer

RFFE• Power Amplifiers

• Low Noise Amplifiers

• RF Switches

RFSOI FD-SOI

RFSOI BiCMOS

Antenna elements

RFFE-DBF• Power Amplifiers

• Low Noise Amplifiers

• RF Switches

• AD/DA Converters

FD-SOI

SerDes

Digital Beamforming

AnalogBeamforming

• Digital Beamformer

• System Calibrations

• DFE

• Local oscillator

• System calibrations

• DFE

• Local oscillator

RFFE-ABF• Power Amplifiers

• Low Noise Amplifiers

• RF Switches

• Phase Shifters

Transceiver• Up/down converters

• Local oscillator

SerDes

IQ

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Innovative products for the 5G rollout from ST

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Page 18: RF and SOI technologies for 5G deployment version for release2soiconsortium.eu/wp-content/uploads/2018/08/RF-and...• A global semiconductor leader • 2017 revenues of $8.35B with

New RF IPD with improved Capacitor Q factor

Old MIM cap New MIM cap

Q factor 3 x Better � Insertion Losses improved

New generation

Prior generation

5GHz band pass filter( N77 example, also compatible

with N79 )

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New Tunable BST Capacitor with higher frequency range

0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2

Frequency (GHz)

Actual PTIC resonancein n77 band

New PTICfor 5G

n77 band

• IMPEDANCE TUNING

• FREQUENCY TUNING

• PHASE SHIFTER

ActualNew

OK

Not OK

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• STuW1026R : 10 GHz to 26.5 GHz super-heterodyne Receiver • Backhauling point-to-point link • Microwave Communications

• STuW1026T : 10 GHz to 26.5 GHz super-heterodyne and ZIF Transmitter with embedded DPD loopback receiver• Backhauling point-to-point link • Satellite communication return channel • Microwave Communications

Gateways

Residential

Satellite Communications

Building

Terrestrial Backhauling

Cost-effective SiGe-based devices enabling the transition from GaAs solutions

5G Network Backhauling solutions

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SPARCLink 60 GHz RF TransceiverRF mmW Short Range Connectivity

High-speed, low-power wireless link for close proximity data transmission

InstantaneousData Transfer

SeamlessDocking

Flex cablereplacement

6 Gbps - SLVSStandard Interfaces(USB, DisplayPort) 10 Gbps

SPARCLinkA2

SPARCLinkA3

SPARCLinkA4

• From 1 Mbps up to 6 Gbps

• Very low power solution with a power budget of just 40 mW

• Miniature form factor with optimized BoM

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SPARCLink 60 GHz RF Transceiver Taking CE Designs to the Next Level

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Robust contactless connectors for

industrial applications

Board-to-board

connexion

Life-proof

connector-less devices

On the go

Device-to-device sync

Smart connector-less

Docking stations

PC 2-in-1 and

mobile continuum

Connector-less devices Board-to-board flex-less solutions

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5G Technology from ST - Takeaway• 5G and 5G Phase II require new technologies to meet performance requirements

• mmWave frequencies especially require new materials for both base stations and terminals• IDMs are the best equipped partners to offer new technologies solutions and manufacturing

• ST has a wide range of RF technology solutions, with high silicon integration capability • BiCMOS, CMOS, FD-SOI, RF-SOI

• ST has developed high performance mmW RF solutions for 10+ years : • RF Transceiver products up to 60Ghz

• ST pioneered beamforming solutions for Satcom market • RF Front-end (PA, LNA), Transceiver & Beamformer products – technology can be re-deployed for 5G

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ST is a unique partner for 5G mmWave IC development

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