commercializing rf soi
TRANSCRIPT
Peregrine: Solving the World’s Toughest RF Challenges
Peregrine Semiconductor Proprietary 4
Fabless semiconductor company
• Pioneered use of CMOS SOI for RF
• Performance on par with GaAs, with all the
benefits of CMOS
• Perfected technology over 25 years
Serving multiple end-markets
• Leading innovator in the mobile handset space
• Bringing RF innovation to aerospace,
automotive test & measurement and other
industrial markets
• Initial Public Offering August 2012
• Headquarters in San Diego, CA
• 300+ employees
SAPPHIRE
Proven SOI Technology
Outstanding RF/Microwave
Properties
Mature Supply Chain
Most Widely Used
Semiconductor Technology
CMOS
Scalable
Lowest Power and Cost
Fabless Model
Industry-Leading RF Semiconductor Technology
Near-Perfect
Insulating Substrate+
UltraCMOS® Silicon-on-Sapphire
Combining the Best of the Best
Unique Position in Industry
Better Performance
Enables Integration RF Smaller Analog Smarter Digital
A Unique form of Silicon-on-Insulator (SOI) Technology
Bulk CMOS Process UltraCMOS 1-9 Process
oxide gate gatecontactcontact
silicon layercontact
insulating sapphire substrate
p-channel FET n-channel FET
UltraCMOS 10 Process
p+ base
semi-insulating GaAs substrate
n+ GaAs subcollector
n- GaAs collector
AlGaAsemitter
collectorcontact
basecontact
emittercontact
basecontact
GaAs HBT Process
isolationimplant
npn-bipolar HBT
contact gate isolation
n+ n+ n+p+ p+ p+
p+substrate
p-epitaxial layer
n-well
oxidegate contactcontact
bodytie
n-channel FETp-channel FET
p-well
contact gate isolation
n+ n+p+ p+
High resistivity Si substrate
gate contactcontact
n-channel FETp-channel FET
Buried oxide layer
UltraCMOS® Technology vs. Competing RF Processes
RFFE Technology Comparison
Digital
Logic
Analog &
Mixed
Signal
Circuits
Low-
Noise
Amplifiers
High-Quality
Passives
and Filters
Complex
RF
Switches
Handles high
RF voltages
Power
Amplifiers
Monolithic
RF SOCCost
SOS
CMOS BEST BEST BEST BEST
Bulk
CMOSBEST BEST
Si
Bipolar BEST
SOI
CMOS
Si
BiCMOS BEST
SiGe
BiCMOS
III-V
MESFET BEST
III-V
Bipolar BEST
RF SoC integration requires or better. Х means the technology cannot integrate the function
UltraCMOS® Switches Launched the RFCMOS Revolution
• Reduced FEM footprint by nearly half
• Reduced assembly costs
• Improved quality & reliability
• Set linearity levels over GaAs
3.0
mm
3.8 mm
GaAs ASMThree IC technologies needed
CMOS
Decode/Bias
GaAs
SP9T
LPF
IPD UltraCMOS™
SP9T
Solution
2.5
mm
2.5 mm
UltraCMOS ASMTX LPFs integrated into substrate
>45% reduction in area
All devices are SMD
Simplified supply & manufacturing
Peregrine Semiconductor Proprietary 8
Switches Were the First Example of “Intelligent Integration”
• UltraCMOS technology supports multiple capabilities simultaneously
• Enables integration of many additional “ancillary” functions
9
ES
DC
HA
RG
E
PU
MP
S
SP
IV
OLTA
GE
RE
GU
LA
TO
RS
NO COMPROMISE IN RF PERFORMANCE
CORE
CAPABILITY
MIC
RO
WA
VE
AN
AL
OG
DIG
ITA
L
RF
UltraCMOS® Technology - Enabling μWave Integration
Peregrine Semiconductor Proprietary 10
fSerial
Bus
Control
TX_IN
RX_OUT
CLK
DATA
EN
VDD
VSS
RX_AMP
TX_AMP
MICROWAVE
PERFORMANCE
MMIC DESIGN
TECHNIQUES
MULTI BAND
TUNING
CONTROL LOGIC &
CALIBRATION
MMIC, DIGITAL &
ANALOG INTEGRATION
Developing Universal Flexible Products
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IndustrialAerospace &
Defense
Test &
Measurement
Wired
Broadband
Wireless
Infrastructure
AGGREGATION OF REQUIREMENTS
WI PRODUCTWIRED
PRODUCT
T&M
PRODUCT
AEROSPACE
PRODUCT
INDUSTRIAL
PRODUCT
UNIVERSAL
FLEXIBLE
PRODUCT
• Increased Volume
• Reduction in Product SKU’s
• Cost Effective
UltraCMOS Global 1 Integrated System
No compromise in RF with the Integration benefits of CMOS
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What is included in Global 1
• 3-path MMMB PA, Post PA switching, Antenna switch & Antenna tuner
• Support for envelope tracking
• Common RFFE MIPI interface
MMMB PA
Post-PA Switch Antenna Switch Tuner
Integration Drives Improved RF Performance
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Low Band PA
690-915MHz
Mid Band PA
1710-2100MHz
High Band PA
2300-2700MHz
5 Unique
Low Band Outputs
RFFE MiPi
Control Interface
Common Bias
Generation
Tunable input, inter-stage and output matching
5 Unique
Mid Band Outputs
4 Unique
High Band
Outputs
Benefits of Intelligent Integration
Configurability
Flexibility
Reliability
Repeatability
Ease of Use
Smaller Form Factor
Performance
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Intelligent Integration enables our end customers to deliver improved
system performance and quality products with streamlined
manufacturing and supply chain