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  • IEMN

    Unité Mixte de recherche CNRS 8520Unité Mixte de recherche CNRS 8520

    Journées RTVide b b28 septembre au 1er octobre 2010

    Jean‐Luc LORRIAUX

  • INSTITUTE CREATED JANUARY 1st, 1992

    IEMN is a joint research unit betweenj

    Centre National

    CNRSCNRS UVHCUVHC Université de Centre National 

    de la Recherche Scientifique

    Institut Supérieur d’Electronique

    ISENISENUniversitéUniversité Lille 1Lille 1 Des Sciences et  T h l i

    Valenciennes et  du Hainaut  Cambrésis

    d Electronique et du Numérique

    Technologies

  • ONE CENTRAL LABORATORY AND 4 UNITS

  • OUR MISSIONS

    EducationEducation

    • Master, PhD and post doc• Master, PhD and post doc

    ResearchResearch

    • Multidisciplinary research with emphasis on  nanosciences, micro and nanotechnologies,  telecommunications and acoustics

    • Multidisciplinary research with emphasis on  nanosciences, micro and nanotechnologies,  telecommunications and acoustics

    ResearchResearch

    telecommunications and acoustics telecommunications and acoustics 

    I tiI ti

    • Scientific policy in agreement with  socio‐economic problems,

    • Scientific policy in agreement with  socio‐economic problems,

    InnovationInnovation

    socio economic problems, • Partnership either with large companies 

    or SMEs   • Actor of the regional economic development

    socio economic problems, • Partnership either with large companies 

    or SMEs   • Actor of the regional economic development

  • IEMN STAFF

    > 500 people> 500 people

    255 permanent  255 non permanent p positions

    155 researchers 100 ing and

    p positions

    160 phd155 researchers and professors

    110 f

    100 ing. and  tech.

    160 phd students

    30 t

    30 post doc

    5 i it d110 professors ‐ associate professors 45 CNRS

    30 master  students

    5 invited professors

    30 trainees

    100 F i i f 20 diff t t i100 Foreigners coming from 20 different countries

  • TOTAL BUDGET ~ 29 M€

    21 M€ of annual support(French government)

    19 M€ for salaries of permanents positions

    2 M€ To support the research (Investment, running cost…)

    21 M€ of annual support(French government)

    8 M€ from contracts (agencies, EU, industry)

    28%

    65%7%

    %

    65%

  • RESEARCH POLICY

    L t 30  %30  % 50 %50 %

    Mid term Sh t t 20 % 20 % 

     Basic phenomena

    Long term Research

    Mid term Research

    Short term Research

     Support of industrial R&D  Answer to industrial needs Basic phenomena  Search of breakthrough and innovative solutions

     Support of industrial R&D  Design, fabrication and characterization of devices

     Answer to industrial needs  Design and fabrication of demonstrators and prototypes• Micro and nanosystems p yp  Complete systems• Material for ICT

    ‐ Semiconductors ‐ Organic, polymer

    Micro and nanosystems

    • Micro and nanoelectronics

    • Optoelectronics • Sensors T l i i

    • Nanostructures ‐ Nanotubes, nanowires ‐ Quantum dots

    • Acoustics

    • Microfluidics

    h

    ‐ Telecommunications ‐ Bio‐health applications ‐ Non destructive control

    Q ‐ Nanodevices • Thermics

    • Packaging

  • INTERNATIONAL RELATIONS

    Worldwide collaborations

    • Many EU projects with European Institutes and Companies

    • European Associated Laboratory with the GPI of Russian Academy of Sciences  ( li ti )

    Worldwide collaborations

    (nonlinear acoustics) 

    • Cooperation agreement with NTU (Singapore)

    • Dual master degree with Georgia Tech (Atlanta)

    • Education program with UC Irvine

  • IMPORTANT LINKS WITH ASIA

  • Scientific organization

    5 Scientific Departments and 18 research groups

    Dpt 1 Dpt 2 Dpt 3 Dpt 4 Dpt 5pt __________ MATERIALS AND NANOSTRUCTURES

    pt ___________ MICRO AND NANO SYSTEMS

    pt 3 ___________ MICRO NANO AND OPTOELECTRONICS

    pt ___________ COMMUNICATIONS CIRCUITS AND SYSTEMS

    pt 5 ___________ ACOUSTICS

    D. Stievenard V. Senez G.Dambrine P.A. Rolland B. Dubus

    EPIPHY X Wallart

    BIOMEMS V Senez

    PUISSANCE J C Dejaeger

    CSAM P A Rolland

    ACOUSTIQUE A C HladkyX. Wallart V. Senez J.C. Dejaeger P.A. Rolland A.C. Hladky

    NCM D.Vuillaume

    NAM6 B.Legrand

    ANODE F.Danneville

    MITEC T. Lasri

    ULTRASONS M. Ouaftouh

    Physique AIMAN DOME COMNUM AIMANy q C.Delerue P. Pernod D. Lippens F.X. Coudoux Pernod

    MITEC T. Lasri

    Microélec Si E. Dubois

    TELICE M.Lienard

    OPTO Microélec SiOPTO D. Decoster

    Microélec Si E. Dubois

    SILPHYDE J.L. Thobel

    EPIPHY X. Wallart

  • THEME OF RESEARCH

    M t i l d t tMaterials and nanostructures

    MBE growth, arsenides, phosphides,  antimonides, nanocrystals, high K  materials, Si‐organic molecules interfaces,  surface science for bio screening molecularsurface science for bio‐screening, molecular  electronics, nanotubes, nanowires

  • THEME OF RESEARCH

    h l dMicrotechnology and microsystems

    Microactuators, SDAs, RF‐MEMS,  Microfluidics, Bio‐MEMs, Magnetic  Mechanical Microsystems THzMechanical Microsystems, THz  Microsystems, acoustic bioMEMs

  • THEME OF RESEARCH

    d lMicro nano and optoelectronics

    Device modeling, advanced MOS , III‐V devices  for mm, sub‐mm and THz applications, power  devices Si mm wave circuits photonic crystalsdevices, Si mm‐wave circuits, photonic crystals,  left‐handed materials, microwave photonics,  nanophotonicsa op oto cs

  • THEME OF RESEARCH

    dCircuits and communication systems

    Smart object communication indoor broadbandSmart object communication, indoor broadband  wireless communications, telecommunications  for transportation systems, electromagnetic  compatibility, re‐configurable mobile  communications RF interface, smart antennas,  i th t d di tmicrowave thermometry and radiometry

  • THEME OF RESEARCH

    Acoustics

    Electro‐active devices, power  ultrasonics, picosecond acoustics, 

    lnonlinear acoustics, NDC, antenna  modeling, propagation of acoustic  waves in complex mediawaves in complex media

  • THE COMMON FACILITIES

    Micro and Nano Fabrication  clean‐room

    Near field  microscopy  platform

    Measurement TelecomMeasurement  facilities

    Telecom  platform

  • Micro and Nano Fabrication clean‐room

    1600 square meters clean room devoted to micro and nanotechnology

    Staff: 26 Ing/Tech

    Equipment: about 20 M€

     Two e‐beam machine  EBPG 5000+ 100kV

    Main equipments

     Focused ion beam

     3 Solid source MBE machines,  MBE 32

     Ion  Implanter GA3204 

     6 Oxidation/diffusion furnaces. Nanowire furnace

     Several deposition equipments (evaporation, sputtering)

     Several etching and plasma deposition machines (RIE, ICP,  PECVD)

     Organic material platform.

  • Micro and Nano Fabrication clean‐room

  • Measurement facilities

    Devoted to high speed‐high frequency device characterization

    Staff :  4 Ing/Tech

    Equipment: 2,5 M€

     45 MHz ‐ 325 GHz  networks analyzers

    Main equipments

    y

     THz measurements using electro‐optic sampling

     Noise measurements

     Low temperature Microwave measurements

     High temperatures microwave measurements

     Nonlinear measurements

     MEMS and NEMS characterization

  • Measurement facilities

    Carry out the full electrical characterization of electronic devices :Carry out the full electrical characterization of electronic devices :

    • over a wide frequency range up to 325GHz.

    • over a wide temperature range from 4.5K to 600K.p g

    • For low current level such as several fA.

    Perform the technology feedback

  • Near field microscopy platform

    Staff :  3 Ing/Techg/

    Equipment: 3,3 M€

     Ultra high vacuum STM, ambiant T°

    Main equipments

    g ,

     Ultra high vacuum AFM/STM at variable T°

     LT‐STM, (4K)

     3 open air AFM 

     Open air STM 

     Four probes STM

  • Telecom platform

    Staff :  3 Ing/Techg/

    Equipment: 2,5 M€

     Complex signal generators

    Main equipments

    p g g  Complex modulation schemes  High data rate systems 

    characterization  WLAN  UWB

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