performance demonstration of theon’s existing ... - escies

www.theon.com

Performance Demonstration of THEON’s existing Pressure Modules for Space Applications

Zervakis, M.; Mazarakis, G.; Spyropoulou, A.; Glykiotis, G.; Fikos, G.; Athanasopoulos, T.

ESTEC, 17 October 2012

1. Introduction - THEON SENSORS SA profile - MEMS Business Unit technologies/capabilities - THEON-ESA related activities

2. Performance Demonstration of THEON’s existing Pressure Modules

for Space applications - MEMS transducer - ASIC - System Performance

- Identification of space application and end-user

3. Current status of THEON pressure sensors

4. Outcome

Outline

Privately owned company established in 1997 and rapidly expanded

in the world market

A high technology company with advanced design and development

capabilities, flexibility and custom made approach

Electro-Optic Systems

Design, development and manufacture of Electro-Optic Systems for defense and security applications

Micro Electronic Mechanical Systems (MEMS) Design, development and production of customer-specific MEMS-based modules for aerospace, industrial, medical and consumer goods applications

Company Profile

MEMS Business Unit

• Fabless design and development house for customer specific sensing modules

• Full control and ownership of all aspects of our products

• Combined state of the art hardware and software for measuring

– Airflow

– Pressure

– Acceleration

• Capability to design, develop and move fast to prototype in response to customer-specified systems

•From concept and design to low-medium-high volume production

• Targeting applications in the following markets

– Medical, Industrial, Aerospace, Automotive, Consumer goods

Company Information MEMS Business Unit Technology

MEMS ASIC Products

Mass Flow

meter

Pressure

Sensor

Accelerometer

Capacitive

Interface

Resistive

Interface Flow

Capacitive

Pressure Sensor

Capacitive

Accelerometer

Process

technology

MEMS Capacitive

Pressure Sensors

(Proprietary)

MEMS Bulk

Micromachining

for Resistive Flow

Sensors

MEMS Surface

Micromachining

for Capacitive

Inertial Sensors

(Commercial)

0.18um Mixed-

Signal CMOS

(Commercial)

Design and Simulation of Silicon based micro sensors (MEMS)

Design and Simulation of electronics, for signal conditioning and interfacing of micro sensors

Design of MEMS Modules Mechanical Housing

Design of substrates

System packaging and microassembly / Wire and Die Bonding

System integration and assembly

Systems Testing and Characterization

ESA activities

• MEMS Pressure sensors 1. “Performance Demonstration of THEON’s existing Pressure

Modules for Space applications” 2. “Space Qualified Family of MEMS Pressure Modules for Satellite

Applications”

• MEMS Accelerometers 1. “Feasibility Study for MEMS-SOI Capacitive Accelerometer ” 2A. “Flight Demonstrator for a MEMS Accelerometer for Launchers” 2B. “Accelerometer Re-direction study”

Performance Demonstration of THEON’s existing Pressure Modules for Space Applications

• Pressure sensor technologies survey

• Identify potential space applications and end-user requirements

• Assessment of THEON’s existing pressure sensing technology

• Design of a technology demonstrator for an identified space application

• Propose a development plan for the demonstrator

Activity started on Feb 2009 and successfully concluded on Sep 2011

Scope and objectives of activity :

Principle of Operation

Capacitive Sensing principle Motion of flexible silicon membranes under external pressure Absolute Operation

Features of Microfabrication Process

Bulk Micromachining of SOI wafers Industrialized Frozen Process developed together with X-FAB Theon is the owner and exclusive user of the process and owner of any fabricated design

3D model

Simulation result

(Displacement)

Simulation result

(Stresses)

MEMS Pressure Sensor Technology

• Design analog, digital and mixed-signal integrated circuits for signal conditioning of MEMS sensors

• Full-custom circuit design with different CMOS

technologies ranging from 1um down to 90nm • System level simulations of both electronics and

MEMS

• First generation of ASIC (2003-2007) • 0.35um CMOS

• Second generation of ASIC (2007-…) 0.18um CMOS

• Family of ASIC for Capacitive Sensors

(TH108C, TH109C, TH110, TH111, TH112)

CMOS ASIC for pressure sensors

Performance Assessment MEMS Pressure Sensor Die

Visual

Inspection

TEST PLAN

MEMS Pressure Sensor Die

On

WaferC-P

Thermal

C-P

Radiation

as per ESCC 22900

TIDSEE

Range: 11 bar

Mechanical

as per MIL-STD-883f

Physical

Analysis

Lifetime

Range : 1-3.7 bar

Samples : 46

Range : 0.5-1.2 bar

Samples : 40

Range : 1-11 bar

Samples : 60

Range : 1-3.7 bar

Samples : 7

Temp : 0...80 oC

Range : 0.5-1.2 bar

Samples : 20

Temp : -10...80 oC

Range : 1-11 bar

Samples : 20

Temp : -10...80 oC

Sampling: 6 Wafers 20

samples/Wafer

Full Mapping: 2 Wafers

Shock

(Meth. 2002

Cond. B,D)

Ranges: 0.5-1.2 bar

1-11 bar

1-100 bar

Samples: 9 from

each range

(6 samples 1500g)

(3 samples 5000g)

Vibration

Fatigue / Variable

frequency

(Meth. 2005, 2007

Cond. A)

2010 Campaign

Range : 1-3.7 bar

Sense Capacitor

Dose Rate:680 rad/h

TID: 94.6 rad SiRanges: 0.5-1.2 bar

1-11 bar

1-100 bar

Samples:6 from

each range

Performance

Assessment

Initially Planed

Completed

Not Initially Planed

Completed

Color Code

Optical

Microscope,

SEM, FIB

DC BiasPressure Cycling

under DC Bias

2011 Campaign

Range : 11 bar

Sense Capacitor

Reference Capacitor

Dose Rate:350 and

700 rad/h

TID: 108.6 krad Si

9 9.1 9.2 9.3 9.4 9.5 9.66 9.8 9.9 100

5

10

15

20

25

30Wafer:17a Design:1-11 Bar Differential

Capacitance (pF)

Nu

mb

er

of

Se

nso

rs

Sim

ula

tio

n

column

row

Wafer:17a Design:1-11 Bar Differential

10 20 30

10

20

30

40

50

60

70 9.45

9.5

9.55

9.6

9.65

9.7

Wafer Mapping C at Patm histogram

Sensor: 1-11 Bar Differential

MEMS Performance Assessment On Wafer Measurements

0 1 2 4 6 8 10 129.4

9.5

9.6

9.7

9.8

9.9

10

10.1

10.2

10.3

10.4Design:1-11 Bar Differential C - P Characteristic - Wafer:15-20

Absolute Pressure (bar)

Ca

pa

cit

an

ce (

pF

)

Simulation boundaries

based on process variations

0 1 2 4 6 8 10 12-0.1

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8Design:1-11 Bar Differential ΔC - P Characteristic - Wafer:15 - 20


Ca

pa

cit

an

ce (

pF

)

Simulation boundaries

based on process variations

MEMS Performance Assessment C-P Measurements

Sensor: 1-11 Bar Differential (60 samples)

0 1 2 4 6 8 10 11 12

9.7

9.8

9.9

10

10.1

10.2Design:1-11 Bar Differential Thermal C - P Characteristic - Wafer:17


Cap

acit

an

ce (

pF

)

W17bR1C24 -10C

W17bR1C24 25C

W17bR1C24 80C

Typical ΔCo ≈ 20 fF

(4.2 % FS max)

Sensitivity Drop

( 7.6 % FS max)

MEMS Performance Assessment Thermal C-P Measurements

Sensor: 1-11 Bar Differential / Temp Range: -10 to 80 0C (20 samples)

Temperature related offset drifts in Csense are partly compensated

with a reference capacitor using differential electronics architecture

• Good Wafer to Wafer repeatability

• >90% measured versus simulated performance of ΔC

• <4% error in Cos measured versus simulated value

Parameter Pressure Sensor

1-11 Bar Dual

Cos prediction accuracy 74%

CFSS prediction accuracy 100%

Error of Sim vs Meas Cos (fF) < 100

Error of Sim vs Meas Cos (% Cos) <1%

MEMS Performance Assessment Overview of Simulated vs Measured results

MEMS Performance Assessment Radiation (TID / SEE) - Outcome

• TID Test method: Remote Testing (C – P characteristic

before and after each irradiation step)

• All dies remained functional (12 / 6 samples)

• Radiation effect is mainly observed as a negative offset

in sensor’s sense and reference capacitance

• No change in sensitivity

• Reference capacitor can compensate for ~ 50-60% of

the radiation effect using differential readout electronics

• No Single Event Effects were observed with Kr beam @

LET=31 MeVcm2/mg

3.7 Bar Sensor (TID 2010) 11 Bar Sensor (TID 2011) Radiation

as per ESCC 22900

TIDSEE

Range: 11 bar

2010 Campaign

Range : 1-3.7 bar

Sense Capacitor

Dose Rate:680 rad/h

TID: 94.6 rad Si

2011 Campaign

Range : 11 bar

Sense Capacitor

Reference Capacitor

Dose Rate:350 and

700 rad/h

TID: 108.6 krad Si

MEMS Performance Assessment Mechanical (Shock / Vibration)

Device under Test

Bare silicon Capacitive Pressure Sensor Dies

Purpose

• Survivability of the membranes

• Thin film delamination

• Loss of hermeticity in vacuum sealed cavity (wafer

bonding failure)

• Die fracture

Test Outcome

• Optical inspection, optical profilometry and electrical

testing (offset capacitance) revealed no damage or

malfunction

Visual

Inspection

TEST PLAN

MEMS Pressure Sensor Die

On

WaferC-P

Thermal

C-P

Radiation

as per ESCC 22900

TID SEE

Mechanical

as per MIL-STD-883f

Physical

Analysis

Lifetime

Range : 1-3.7 bar

Samples : 46

Range : 0.5-1.2 bar

Samples : 40

Range : 1-11 bar

Samples : 40

Range : 1-3.7 bar

Samples : 7

Temp : 0...80 oC

Range : 0.5-1.2 bar

Samples : 20

Temp : -10...80 oC

Range : 1-11 bar

Samples : 20

Temp : -10...80 oC

Sampling: 6 Wafers 20

samples/Wafer

Full Mapping: 2 Wafers

Shock

(Meth. 2002

Cond. B,D)

Ranges: 0.5-1.2 bar

1-11 bar

1-100 bar

Samples: 9 from

each range

(6 samples 1500g)

(3 samples 5000g)

Vibration

Fatigue / Variable

frequency

(Meth. 2005, 2007

Cond. A)

2010 Campaign

Range : 1-3.7 bar

Ranges: 0.5-1.2 bar

1-11 bar

1-100 bar

Samples:6 from

each range

Performance

Assessment

Initially Planed

Completed


Completed

Color Code

Optical

Microscope,

SEM, FIB

DC BiasPressure Cycling

under DC Bias

2011 Campaign

Range : 11 bar

MEMS Performance Assessment Lifetime

Device under Test

Bare silicon Capacitive Pressure Sensor Dies

Purpose

• Explore possible charge trapping on sensor dielectrics during normal and

touch-mode operation

Test 1 – DC Bias under normal operation (3.7 bar sensor)

• Detect sensor C – P output characteristic change after applying 10 V Bias for

120h (normally 1.65 V is applied by the ASIC)

• Outcome: No change detected

Test 2 – DC Bias under cycling touch mode operation (1.2 bar sensor)

• Detect sensor C – V output characteristic change after applying 1.65 and 3.3

V Bias for up to 19.000 cycles of overpressure (2x)

• Outcome: No change detected

Performance Assessment ASIC and Pressure Module

TEST PLAN

ASIC & Pressure Sensor Module

V – P

Analog and Digital

Output

Range : 1-11 bar

Version : TH109A

Thermal V - P

Analog and Digital

Output

Range : 1-11 bar

Temp: -20 to +75 oC

Version : TH109A

Radiation

as per ESCC 22900

TID

100 kradSEE

2010 Campaign

Individual Analog

Blocks Tested

Version : TH109A

Dose Rate:680 rad/h

TID: 94.6 rad Si

Module Performance

Assessment

Initially Planed

Completed


Completed

Color Code2011 Campaign

Individual Analog and

Digital Blocks

Module Tested

Version:TH109A

Dose Rate:350 and

700 rad/h

TID: 108.6 krad Si

Individual Analog

Blocks Tested

Version : TH108A

Individual Analog

Blocks Tested

Basic Digital

Functionality

Version : TH109A

ASIC Performance

Assessment

Individual Analog

Blocks Tested

Extended Digital

Functionality

Version : TH110A

2011 Campaign

Module Analog Digital Output

Module Digital Functions

Version:TH110A

Module Performance Assessment

0 2 4 6 8 10 120

0.5

1

1.5

2

2.5

3V - P Characteristic - Unprocessed


Ou

tpu

t (V

olt

)

-20 Celcius

25 Celcius

75 Celcius

Analog V - P Output - Unprocessed

Pressure Range: 1 - 11 bar / Temperature Range: -20oC to +75oC

0 2 4 6 8 10 120

2

4

6

8

10

12Calibrated Pressure Output


Mo

du

le P

ress

ure

(b

ar)

-20 Celcius

25 Celcius

75 Celcius

Resolution: < 0.05 % FS

Total Error: < 0.5 % FS (including repeatability, hysteresis, linearity, thermal)

Digital Calibration

Temp Compensation

MEMS

Pressure Sensor

MCU

PSU

ASIC

PRESSURE MODULE

Calibrated/Compensated P Output

Prototype Industrial

Prototype

ASIC and Module Performance Assessment Radiation (TID)

Radiation

as per ESCC 22900

TID

100 kradSEE

2010 Campaign

Individual Analog

Blocks Tested

Version : TH109A

Dose Rate:680 rad/h

TID: 94.6 rad Si

2011 Campaign

Individual Analog and

Digital Blocks

Module Tested

Version:TH109A

Dose Rate:350 and

700 rad/h

TID: 108.6 krad Si

2011 Campaign

Module Analog Digital Output

Module Digital Functions

Version:TH110A

2010 and 2011 TID Campaign at ESTEC ASIC:

• Bandgap voltage reference (2010, 2011)

• Temperature sensor (2010, 2011)

• Buffer (2010)

• Instrumentation amplifier (2010)

• ΣΔ modulator (2011)

Pressure Module

• Analogue Pressure Output

• Temp Sensor (in situ)

1. TID campaigns • Irradiation Facilities : ESA / ESTEC • Source : 60Co (gamma) • Dose rate: ~680 Rad(Si)/h- ~ 360 Rad(Si)/h • Total dose : up to 95Krad (Si)- up to 110Krad (Si)

14/01/2010 01:30:16 15/01/2010 10:50:16 16/01/2010 20:10:16 18/01/2010 05:30:16

0,0

20,0k

40,0k

60,0k

80,0k

100,0k

14/01/2010 01:30:16 15/01/2010 10:50:16 16/01/2010 20:10:16 18/01/2010 05:30:16

1,200

1,205

1,210

1,215

1,220

1,225

1,230

1,235

1,240

1,245

1,250

1,255

1,260

Bandgap Reference(During irradiation)

Time(d/m/y h:m:s)

Volta

ge

(V

)

ASIC #1

ASIC #2

ASIC #3

ASIC #4

ASIC #5

To

tal D

ose (

rad

)

Total Dose

Outcome :

• All ASIC’s remained functional after 6 days of continuous operation up to 110Krad

• No drifts were reported in the output of all basic building blocks

• No significant change in power consumption observed

• All modules remained functional

• Further verification is needed in system level

ASIC Performance Assessment Radiation (TID)

ASIC Performance Assessment Radiation (TID)

1. TH110 – SEL/SEU campaign • Irradiation Facilities : UCL, BELGIUM • High LET-High penetration cocktails • Flux: 3 x 103 to 6 x 103 particles/cm2/s

Outcome :

• ASIC’s were sensitive to SEL with a LET threshold around 10 MeVcm2/mg

• SEL was not destructive and the ASIC’s recovered full functionality after a power cycle

• ASIC’s were sensitive to SEU with threshold around 3.6 MeVcm2/mg

• SEU was not destructive and the ASIC’s recovered after a reset operation

•3 Radiation campaigns were implemented with THEON ASIC’s

• Thales Alenia Space (TAS) was identified as a potential industrial partner and joined the activity

• Development of a space qualified family of MEMS pressure transducers for Satellite Propulsion Systems

Identification of Industrial Partner

• Preliminary design of new MEMS capacitive pressure sensors was done

• Preliminary design of the complete transducer including packaging

• Development plan of the family of MEMS pressure transducers

Performance Demonstration of THEON’s existing Pressure Modules for Space

Applications

• Assessment of THEON’s existing pressure sensing technology

• Design of a technology demonstrator for an identified space application

• THEON’s pressure sensing technology is capable of serving space applications

• Testing campaign reported very promising results (radiation, vibration,…)

• Identification of Thales Alenia Space as an end user

• Preliminary design of Pressure Sensors based on TAS specifications

Activity started on Feb 2009 and successfully concluded on Sep 2011

THEON and TAS will develop a “Space Qualified Family of MEMS Pressure Modules for Satellite Applications” under a new ESA activity

started within Q3 2012.

Scope and objectives of activity :

Outcome :

Specifications

Calibration medium Gas, Liquids, etc

Pressure range 1.2, 2, 11, 28, 325 bar Custom

Supply Voltage 3.3 , 5 , 12V

Output Analog, SPI, I2C, Custom

Repeatability <±0.05%FS

Hysteresis <±0.05%FS

Total Error <±0.5%FS

Resolution 16bit

Temperature -20 oC +80 oC

Size Custom

• Architecture

• DIP package • TO package • Stainless steel package

Current Status of THEON pressure sensors

“Performance Demonstration of

THEON’s existing Pressure Modules

for Space applications”

MNT Round Table

ESTEC, 17 October 2012

Thank you!

performance demonstration of theon’s existing ... - escies

Documents