displacement damage defect - escies
TRANSCRIPT
1
Displacement Damage Defect :Improving NIEL scaling
C. Inguimbert, T. NunsONERA- DESP, Toulouse center, France
C. Boatella-poloCNES, Toulouse, France
3
Introduction : NIEL scaling
• NIEL fails sometimes to predict degradation rate due to displacement damages
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E-06 1.E-04 1.E-02 1.E+00 1.E+02 1.E+04
Effective Niel (MeV/g.cm²)
Rad
iatio
n-in
duce
d in
crea
se in
ther
mal
gen
erat
ion
rate
pe
r uni
t flu
ence
( ca
rrie
rs/c
m3 s
ec p
er p
artic
le/c
m²)
Heavy ions
neutrons, protons
electronsgammas
Kdark≈ 1.8 10+05 carriers/cm3.sec/ (MeV/g)
Quadratic variationJ. R. Srour, J. W. Palko " A framework for understanding displacement damage mechanisms in irradiated silicon devices," IEEE Trans. Nucl. Sci., vol. NS-53, no6, December 2006.G. P. Summers, E. A. Burke, P. Shapiro, S. Messenger, R.J. Walters , IEEE Trans. Nucl. Sci.., vol. 40, No. 6, pp. 1372-1379, December 1993.
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01
NIEL (MeV/g.cm²)
Dam
age
fact
or (d
iffus
ion
leng
th)
p-type
n-type
Proton
Electron
Proton
C. Inguimbert, P. Arnolda, T. Nuns, G. Rolland IEEE Trans. Nucl. Sci., vol. NS-57, no4, 2010
4
Goal
• Improving Displacement Damage degradation prediction
• Improving NIEL
• Improving Monte Carlo transport codes
BCA hypothesis
Incorporating for displacement analysis the "improved BCA" method in a GEANT 4application
5
Outline
• Introduction
• NIEL improvement for silicon• Principle of the calculation• Comparison with measured defects introduction rates
• Conclusion
• Outlook
6
Amorphous pockets
• Competition between melting and diffusion of energy processes
• Importance of deposited energy density Santos & al. [5, 6]
• Collective motion that allows displacement damages generation below the traditional threshold (Td ~21 eV in Si)
dTEGntsdisplacemeofNumber )(4.0=
Size initial moving atoms
Size final pocket
1eV/atom 2eV/atom 5eV/atom[5] I. Santos, L. Marques, P. Lourdes, " Modeling of damage generation mechanisms in silicon at energies below the displacement threshold, " Physical Review B 74, 174115 (2006).[6] I. Santos, L. Marques, P. Lourdes, P. Lopez, " Molecular dynamics study of damage genertation mechanisms in silicon at the low energy regime, " Electron Devices, 2007 Spanish Conference on, pp. 37-40, 02 February 2007.
BCA
7
Amorphous pockets
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
PKA recoil energy (MeV)
Num
ber o
f dis
plac
emen
ts (c
ount
)
fsurv = 15%
1.617 eV
Kinchin PeaseTd,KP = 21 eV
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0.01 0.1 1 10 100 1000
E protons (MeV)
NIE
L (M
eV/ g
.cm
²)
Proton in Si
Electron in Si
Classical NIEL
Effective Niel, Td,MD = 1.617 eV
C. Inguimbert, P. Arnolda, T. Nuns, G. Rolland IEEE Trans. Nucl. Sci., vol. NS-57, no4, 2010
Si PKA starting point
Stop position of a PKA
dz Q( ) ( ) ( ) dEENQ
dEd
dzQdN KPSiSi
KP ⋅⋅⋅⋅= ∫ −ση
( ) ( )QdGQdE =ν
u
KPMD b
dNdE
adN ⎟⎟⎠
⎞⎜⎜⎝
⎛+⋅= ν
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E-06 1.E-04 1.E-02 1.E+00 1.E+02 1.E+04
Effective Niel (MeV/g.cm²)
Rad
iatio
n-in
duce
d in
crea
se in
ther
mal
gen
erat
ion
rate
pe
r uni
t flu
ence
( ca
rrie
rs/c
m3 s
ec p
er p
artic
le/c
m²)
Heavy ions
neutrons, protons
electronsgammas
Kdark≈ 1.8 10+05 carriers/cm3.sec/ (MeV/g)
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01
NIEL (MeV/g.cm²)
Dam
age
fact
or (d
iffus
ion
leng
th)
p-type
n-type
Proton
Electron
Proton
8
Bibliographic data : defects introduction rates for electrons in silicon
1E-08
1E-07
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
0.1 1 10 100 1000
Incident electron energy (MeV)
Def
ect c
reat
ion
rate
(cm
-1)
Hamamatsu S1337 n-type Flicker [15], p-SiFlicker [15], n-Si Krinicky [17] n-SiAuret [34] n-Si Auret [34] p-SiGubskaya [35], p-Si Gubskaya[35], n-SiWertheim [36], n-Si Wertheim [36], p-SiCarter [37] n-Si Carter [37] p-SiHönniger [38], n-Si McKeighen [39] p-SiMcKeighen [39] n-Si Trauwaert [40] p-SiWada [41]n-Si Lugakov [42] n-SiNubile [43] p-Si Taylor [44]p-SiKimerling [45] p-Si Makhkamov [46] n-SiHemment [47] n-Si Rai-Choudury [48] n-SiLondos [49] n-Si Bleka [50],[51] n-SiZhalko-Titarenko [52] n-Si Khan [53] p-SiWalker [54] p -Si Walker [54] n-SiFuochi [55] n-Si Hazdra [56] n-Si
p-Si
n-Si
M. J. Beck, L. Tsetseris, M. Caussanel, R. D. Schrimpf, D. M. Fleetwood, and S. T. Plantelides, "Atomic scale Mechanisms for low-NIEL dopant-type dependent damage in Si, " IEEE Trans. Nucl. Sci., vol. NS-53, no6, pp. 1372-1379, December 2006.
9
New NIEL calculation
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0.1 1 10 100 1000
Incident electron energie (MeV)
Def
ect c
reat
ion
rate
(cm
-1)
Flicker [16], p-Si Flicker [16], n-Si
Krynicki, [18] n-Si Carter, [38], p-Si
Carter, [38], n-Si Hazdra, [40], n-Si
Hönniger [41], n-Si Hemment [58] n-Si
Kinchin Pease Td,KP = 72 eV Effective NIEL Td,MD = 1.8 eV
Kinchin Pease, Td,KP = 21 eV Kinchin Pease, Td,KP=36 eV
Part of the curve very importantfor NIEL calculation of electrons
Normalisation
10
Defect introduction rate : comparison with experiments
1E-08
1E-07
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.1 1 10 100
Incident electron energy (MeV)
Def
ect c
reat
ion
rate
(cm
-1)
Hamamatsu S1337-BQ Flicker [15], n-SiFlicker [15], p-Si Auret [34] n-SiAuret [34] p-Si Gubskaya [35] n-Si Gubskaya [35] p-Si Wertheim [36], n-SiWertheim [36], p-Si Carter [37] n-SiCarter [37] p-Si Taylor [44] p-SiWalker [54] p-Si Walker [54] n-SiEffective NIEL [14] Td = 3eV Effective NIEL [14] Td = 1.6 eV (/10)
NIEL is divided by 10
[1 ohm.cm, 10 ohm.cm] 1E-08
1E-07
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
0.1 1 10 100 1000
Incident electron energy (MeV)
Def
ect c
reat
ion
rate
(cm
-1)
Hamamatsu S1337 n-type Flicker [15], p-SiFlicker [15], n-Si Krinicky [17] n-SiAuret [34] n-Si Auret [34] p-SiGubskaya [35], p-Si Gubskaya[35], n-SiWertheim [36], n-Si Wertheim [36], p-SiCarter [37] n-Si Carter [37] p-SiHönniger [38], n-Si McKeighen [39] p-SiMcKeighen [39] n-Si Trauwaert [40] p-SiWada [41]n-Si Lugakov [42] n-SiNubile [43] p-Si Taylor [44]p-SiKimerling [45] p-Si Makhkamov [46] n-SiHemment [47] n-Si Rai-Choudury [48] n-SiLondos [49] n-Si Bleka [50],[51] n-SiZhalko-Titarenko [52] n-Si Khan [53] p-SiWalker [54] p -Si Walker [54] n-SiFuochi [55] n-Si Hazdra [56] n-Si
11
Scaling degradation rate
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01
Classic or Experimental NIEL (MeV/g.cm²)
Dam
age
fact
or (d
iffus
ion
leng
th)
Electron
Protonn-type
p-type
12
Displacement Damage Dose profile
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Depth (mm)
Non
Ioni
zing
Dos
e in
Si s
hiel
ded
with
Al (
Gy)
Standard & New NIEL, Protons (AP8min + solar f lare)
Standard NIEL, Protons (trapped + solar f lare),(AP8min+GOES average)
GPS orbit (20000km, 55°)mission duration 11 yearsstart in solar min september 1986geomagnetic model Jensen Cainsolar protons : JPL 91 80% confidence level stormy weather conditions
Standard NIEL
New NIEL
AE8 max
ONERA MEOworst case
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Depth (mm)
Non
Ioni
zing
Dos
e in
Si s
hiel
ded
with
Al (
Gy)
Pole, electron
AE8max
Standard & new NIEL, Protons (AP8min + solarflare)Standard NIEL, Protons (trapped + solar f lare),(AP8min+GOES average)
Geostationary orbit (35780km, 63°)mission duration 11 yearsstart in solar min september 1986geomagnetic model Jensen Cainsolar protons : JPL 91 80% confidence level stormy weather conditions and earth shadow
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0.01 0.1 1 10 100
Depth (mm)
Non
Ioni
zing
Dos
e in
Si s
hiel
ded
with
Al
(Gy/
year
)
New NIEL, electron
Standard NIEL, electron
New NIEL, Protons
Standard NIEL, Protons
One year in Jovian environment
X10
X2
Electron constraint reduced between a factor 2 and a factor 10
13
Conclusion
Demonstrated for silicon
• Non linear effects, for low energy PKAs, (amorphous pockets)
• MD simulation are used to calculate a new energy partition function for Silicon and new NIEL (Electrons)
• Mixing calculation and defect introduction rate measurements leads to a better degradation prediction
14
Otlook : Improved BCA approach
• Monte Carlo (GEANT 4) implementation
Collisional phase of the cascade(BCA)
Final Number of displacements
Displacement Threshold21 eV in silicon
Collisional phase of the cascade(BCA)
Hot atoms
Disordered atoms efficiency
Final Number of displacements
Displacement Threshold1 eV in silicon
Improving NIEL scaling methodExtending MD simulations for other materials (GaAs, InP, ...)In order to define a new energy partition function and new NIELs tables
15
Perspectives : GEANT4 User Interface
• Incorporating the Improved BCA approach within a GEANT 4 user Interface
• Our own G4 interface demonstrator
• Based on Input/Output file library