mikhail alekseevich krivov (on his 60th birthday)

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MIKHAIL ALEKSEEVICH KRIVOV (ON HIS 60TH BIRTHDAY) On November 20, 1976, Mikhail Alekseevich Krivov, director of the oldest scientific establishment in Siberia, the V. D, Kuznetsov Siberian Institute of Technical Physics, and member of the editorial board of this journal, celebrated his 60th birthday, which also marked 37 yr of scientific, practical, administrative, andcom- munity activity. During his working life M. A. Krivov rose from a worker to director of the institute. M.A. Krivov graduated from Tomsk University in 1940 to experience the Second World War, and return to the Si- berian Institute of Technical Physics in 1945, where he actively engaged in scientific research in the then still small Institute. He soon became scientific deputy to Academician V. D. Kuznetsov, the organizer and director of the Siberian Institute of Technical Phsyics. The postwar years saw the beginning of the present-day scientific- technical revolution. Defining and organizing the development of new lines of scientific research guaranteed the viability and further promise of physics research at Tomsk University. M. A. Krivov discharged this task successfully and was recommended for the post of director of the Institute. By contrast with certain departments and academic institutes, the Siberian Institute of Technical Physics is a multipurpose institute in which subdivisions of various physical disciplines operate. This assists the development of complicated investigations and ensures an up-to-date scientific basis for the practical training of students in all the special branches of physics in the University. However, this also creates cer- tain complications in the organization of scientific work which demand in the director abilities and personal qualities beyond the ordinary. As director, Krivov possessed a broad outlook, was a strong party man, acted democratically in solving important problems in the life of the Institute, and showed firmness and adherence to principle in carrying out a projected course of action. As a scientist M. A. Krivov was one of the initiators in Siberia of work investigating the physics of semiconductors. Since 1954, M. A. Krivov has directed and participated in complex investigations of the electrophysical, photoelectric, and opti- cal properties of atomic semiconductors, binary and ternary chemical compounds, the origin and formation of defects arising on exposure to radiation, heat treatment and diffusion doping. A large series of investiga- tions was made of defects in germanium and silicon, the solubility, chemical activity and energy spectrum of some impurities in germanium under the conditions of strong doping and compensation, the effect of radiation with subliminal energies on the properties of germanium and silicon, as well as of devices based on these elements, Complex investigations were also carried out concerning the properties of gallium arsenide, its energy spectrum, the processes of the formation and interaction of defects created by high-temperature pro- cessing, by ionizing radiation and diffusion doping. The results enabled the physicochemical basis to be laid of techniques for obtaining materials with specified properties for a series of semiconductor devices. M.A. Krivov and his students published over a hundred papers on these questions. A scientist, communist, and an active man in community service, Mikhail Alekseevich Krivov is greatly respected at the Institute. He has received high awards from the Nation for his services, such as the Order of the October Revolution, the Order of the Red Banner of Labor, the "Emblem of Honor," two Orders of the Red Star, and many medals. The editorial board of the journal wishes Mikhail Alekseevieh good health and further success in his pro- ductive work, administrative, and community activities. The Editorial Board of the Journal Translated from IzvestiyaVysshikhUchebnykh Zavedenii, Fizika, No. 11, p. 156, November, 1976. I This material is protected by copyright registered in the name of Plenum Publishing Corporation, 227 West 17th Street, New York, N.Y. 10011. No part of this publication m~y be reproduced, stored in a retrieval system, or transmitted, in any form or by any means, electronic, mechanical, photocopying, microfilming, recording or otherwise; without written permission of the publisher. A copy of this article is available from the publisher for $ Z 50. 1525

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Page 1: Mikhail Alekseevich Krivov (On his 60th birthday)

M I K H A I L A L E K S E E V I C H K R I V O V ( O N H I S 6 0 T H B I R T H D A Y )

On November 20, 1976, Mikhail Alekseevich Krivov, d i r ec to r of the oldest scientif ic es tab l i shment in Siberia, the V. D, Kuznetsov Siberian Insti tute of Technical Physics , and m e m b e r of the edi tor ia l board of this journal , ce lebra ted his 60th bir thday, which also marked 37 y r of scientif ic , p rac t ica l , admin is t ra t ive , a n d c o m - munity act ivi ty. During his working life M. A. Kr ivov rose f rom a worke r to d i rec to r of the insti tute. M.A. Krivov graduated f rom T o m s k Univers i ty in 1940 to exper ience the Second World War, and re tu rn to the Si- be r i an Insti tute of Technical Phys ics in 1945, where he act ively engaged in scient i f ic r e s e a r c h in the then s t i l l sma l l Inst i tute. He soon became scient i f ic deputy to Academician V. D. Kuznetsov, the o rgan ize r and d i rec to r of the Siberian Institute of Technical Phsyics .

The pos twar y e a r s saw the beginning of the p r e sen t -day sc i en t i f i c - technical revolut ion. Defining and organizing the development of new lines of scient i f ic r e s e a r c h guaranteed the viabil i ty and fur ther p romise of physics r e s e a r c h at T o m s k Univers i ty . M. A. Kr ivov discharged this t a sk successfu l ly and was r ecommended for the post of d i rec to r of the Insti tute. By contras t with cer ta in depar tments and academic inst i tutes, the Siberian Institute of Technical Phys ics is a mul t ipurpose institute in which subdivisions of var ious physica l discipl ines opera te . This a s s i s t s the development of compl ica ted invest igations and ensu re s an up- to -da te scient i f ic bas is for the p rac t i ca l t ra in ing of students in all the specia l b ranches of physics in the Univers i ty . However, this also c r ea t e s c e r - ta in compl ica t ions in the organizat ion of scientif ic work which demand in the d i r ec to r abil i t ies and persona l quali t ies beyond the ordinary . As d i rec tor , Kr ivov p o s s e s s e d a broad outlook, was a s t rong par ty man, acted democra t i ca l ly in solving important p rob lems in the life of the Inst i tute, and showed f i rmness and adherence to principle in ca r ry ing out a pro jec ted course of action.

As a sc ient is t M. A. Krivov was one of the ini t ia tors in Siber ia of work investigating the physics of semiconduc tors . Since 1954, M. A.

Kr ivov has d i rec ted and par t ic ipa ted in complex invest igations of the e lec t rophys ica l , photoelectr ic , and opt i - cal p rope r t i e s of a tomic semiconductors , b inary and t e r n a r y chemical compounds, the origin and format ion of defects a r i s ing on exposure to radiat ion, heat t r ea tmen t and diffusion doping. A large s e r i e s of inves t iga- t ions was made of defects in ge rman ium and silicon, the solubili ty, chemica l activity and ene rgy spec t rum of some impur i t ies in g e r m a n i u m under the conditions of s t rong doping and compensat ion, the effect of radiat ion with subl iminal ene rg ies on the p rope r t i e s of ge rman ium and sil icon, as well as of devices based on these e lements , Complex invest igat ions were also c a r r i e d out concerning the p rope r t i e s of gal l ium arsenide , its ene rgy spec t rum, the p r o c e s s e s of the format ion and interact ion of defects c rea ted by h igh - t empera tu re p r o - cess ing, by ionizing radiat ion and diffusion doping. The resu l t s enabled the phys icochemica l bas is to be laid of techniques for obtaining m a t e r i a l s with specif ied p rope r t i e s for a s e r i e s of semiconductor devices . M.A. Kr ivov and his students published ove r a hundred papers on these quest ions.

A sc ient is t , communis t , and an active man in communi ty se rv ice , Mikhail Alekseevich Krivov is g rea t ly r e spec ted at the Inst i tute. He has rece ived high awards f r o m the Nation for his s e rv i ces , such as the Orde r of the October Revolution, the O r d e r of the Red Banner of Labor , the "Emblem of Honor," two Orde r s of the Red Star, and many meda l s .

The edi tor ia l board of the journal wishes Mikhail Alekseevieh good health and fu r the r success in his p r o - ductive work, admin i s t r a t ive , and communi ty act ivi t ies .

The Edi tor ia l Board of the Journal

T rans l a t ed f r o m Izves t iyaVyssh ikhUchebnykh Zavedenii , Fizika, No. 11, p. 156, November , 1976.

I This material is protected by copyright registered in the name of Plenum Publishing Corporation, 227 West 17th Street, New York, N.Y. 10011. No part of this publication m~y be reproduced, stored in a retrieval system, or transmitted, in any form or by any means, electronic, mechanical, photocopying, microfilming, recording or otherwise; without written permission of the publisher. A copy of this article is available from the publisher for $ Z 50.

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