low power cmos sub-threshold circuits presentation
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LOW POWER CMOS SUB-THRESHOLD
CIRCUITS
KALYANI S. BHOSALE
ROLL NO: ME13EM05
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Introduction
Transistor scain! " a!# od soutionto consu$%tion d#cr#as# ands%##d incr#as#.
&or t'at transistor (as o%#rat#d int'# stron! in)#rsion r#!ion.
3 o%#ratin! r#!ions o* transistor:
+#a, In)#rsion R#!ionMod#rat# In)#rsion R#!ion
Stron! In)#rsion R#!ion
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+#a, In)#rsion R#!ion
In t'is r#!ion -
∴ drain curr#nt ↓
∴ s'ort circuit dissi%ation ↓in turn r#sutin! d#cr#as# in
o%#rationa s%##d
co$%ar#d to stron! in)#rsion/
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So (' !o *or o%#ration in (#a,in)#rsion r#!ion
Trad# o2 #t(##n s%##d and %o(#rA%%ications in ('ic' %o(#r
consu$%tion is an i$%ortant *actor
&or suc' a%%ications s%##d is not ai$itin! *actor
E!: #n#r! 'ar)#stin! a%%ications to
cr#at# s#* %o(#r#d $icrosst#$s-(ir##ss s#nsor nod#s #tc
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T'# O%#ration R#!ions
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Fig: Alltransisto
roperatio
nregions(Courtesy:
Operationand
Modeling of
the MOS
Transistor
2nd ed.,
Y. Tsividis)
E4u i/: A r#!ion sin!#%i#c# $od# #6%r#ssion
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+'#n o%#ratin! in t'# sut'r#s'od r#!ion- t'# drain curr#nt
is !i)#n as:
('#r# r#%r#s#nts t'# drain curr#nt('#n
and is !i)#n -
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Fig 2: IDDsub – Vds characteristics in sub-threshold operation region [1]
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7MOS In)#rt#r
Fig 3: a) C!" In#erter
b) !" transistor characteristic[1
]
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Fig $: V%C o& C!" in#erter in sub-thresholdregion [1]
T'r#s'od )ota!# is sut'r#s'od r#!ionis otain#d in t'# sa$# (a as in stron!
in)#rsion r#!ion- #4uai8in! curr#nts
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R#%acin! and so)in! *or(# !#t-
I* t'# in)#rt#r is s$$#tric- i.#. i*
t'#n-
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Os#r)ations and7oncusions T'#r# is a co$%#t# #'a)iour anao! o*
di!ita circuits in ot' o%#ration r#!ions.
T'# di2#r#nc# is in t'# *unctionad#%#nd#nc# o* t'# %ara$#t#rs.
In stron! in)#rsion r#!ion- t'#d#%#nd#nc# is 4uadratic- i.#. s4uar# root-and in sut'r#s'od #6%on#ntia- i.#.
o!arit'$ic.
T'# #'a)iour anao! #na#s t'#usa!# o* t'# sa$# to%oo!i#s *or di!itacircuits in ot' o%#ration r#!ions.
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R#*#r#nc#s
[1] B. Dokic and A. Pajkanovic , “o! po!er "#os su$%threshold "ir"uits,& in Ino!"a#ion Co""$nica#ion
T%c&no'o() E'%c#!onic* Mic!o%'%c#!onic* +MIPRO, /10
0#& In#%!na#iona' Conv%n#ion on /10 22. /34.
[] 5%i' W%*#% and 6a"a!an 7 'rin"iples of CMOS S *esign8 Ed$ca#ion A*ia.
[0] 9. T*ividi* “Operation and Modeling of the MOS
Transistor& nd Ed. O:o!d Univ%!*i#) P!%** /11.
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9u#stions
T'an, ou