low power circuit architectures for 22fdx-technology teepe...the information contained herein is the...

Low power circuit architectures for

22FDX-TechnologyDr. Gerd Teepe | Director Marketing for Europe

© 2017 GLOBALFOUNDRIES 1

Outline

GLOBALFOUNDRIES 1

Semiconductor Market Dynamics2

The 22FDX Technology application space3

Application Example4

Up to 10M Wafers / Year200mm equivalents

28, 22,12nm

Up to 80k

(300mm)

Dresden, Germany

14, 12, 7nm

Up to 60k

(300mm)

Malta, New York

TECHNOLOGY NODES

CAPACITY (WAFERS / MONTH)

180–40nm

68k (300mm)

93k (200mm)

Singapore

90–22nm

Up to 20k

(300mm)

East Fishkill, New YorkBurlington, Vermont

350–90nm

40k

(200mm)

180-22nm

Up to 85k

(300mm)

Chengdu, China

GLOBALFOUNDRIES Manufacturing Capacity

3© 2017 GLOBALFOUNDRIES

FAB1 in Dresden is the Center for FDX-Technologies

22FDX™ in Production

FAB1 in Dresden:

3500 employees out of 51 countries

Development Place for 22nm und 12nm – large local R&D Network

12 Billion $ cumulative Investment into the site since 1996 (first AMD, then GLOBALFOUNDRIES)

1.5 Billion $ planned Investment for capacity increase to 1 Million Wafers/Year


Comprehensive Technology Portfolio


Available In development

200mm MEMS and MEMS + CMOS integration

mmWaveRF CMOS

RFCMOS

High VoltageCMOSLogic

High PerformanceSiGe

EmbeddedMemory

SiGePA

RFSOI

BCDLite® /BCD

7nm

14nm

22nm

28nm

45/40nm

55nm

65nm

90nm

110nm

130nm

180nm

250nm

350nm

MEMS

12nm

GLOBALFOUNDRIES 1




Medical Technology: Clients – Networking – Data&Software

Wireless | Wired

NETWORKSCLIENTS DATA CENTERS

Compute | Storage | Clouds

FD-SOI

Embedded Memory

Advanced Packaging

RF SOI

SiGe

RF CMOS

FinFET

High Voltage

Analog / Power

ASICs

Silicon Photonics

MEMS


GLOBALFOUNDRIES Technologies

Medical EquipmentMedical Clients

Market Drivers

1. Medical Clients

2. Networking

3. (Cloud) Computing

1. Super low Power Technologies

2. 5G (Bandwidth & Latency)

3. Performance and DensityTechnologies

12LP

Low PowerHigh Per-

formance

7nm

FinFET

14nm

FinFET

28nm

22FDX®

40nm

55nm

12FDXTM

1. FDX-Technology

2. FDX-Technology

3. High-Performance FinFET


High PerformanceComputing

FinFET

eNVM

eMRAM

Wireless, Battery-PoweredComputing

FD-SOI

GF CMOS Roadmap Redefines Mainstream


7LP

12LP

14LPP

28nm

22FDX®

40/55nm

12FDX™

Applications- Servers

- HPC

- Graphics

- High-end AP

- Core networking

- Auto high-end ADAS

Premium Tier

Features- High-performance

- Balanced-cost

Applications- Low & mid AP

- IoT

- Autonomous vehicles

- Mobile camera

Volume Tier

Features- Low-power

- Cost-effective performance

- High Performance RF and

mmWave

- Embedded memory

GLOBALFOUNDRIES 1




22FDX® Ultra-low Power Libraries Enable 0.4V Vdd


Complete solution of IP, libraries and design methodology with adaptive body-bias

IP, Libraries, & Methodology for 0.4V

Zero bias well

Process Monitor

Centr

al C

ontr

olle

r U

nit f

or

Body-B

ias

BBGEN –N (0 to +1.8V)

N-well

Clk

BBGEN –P (0 to -1.8V) P-well

Enable

Silicon Logic Vmin <0.4V

No Body Bias

+/-0.45vBody Bias

+/-1.0vBody Bias

Differentiation: Body Bias To Simplify Design, Boost Performance

Compensate for process, temperature,

and aging variations

Benefits:

– Reduce Area

– Reduce Power

– Enables Ultra Low Voltage Operation

– Faster design verification (tighter distribution)

Boost Performance to FinFET Speeds

Benefits:

– Increase Performance

– Less Dynamic Power than Voltage Scaling

Global Corner Trimming

Performance Boost


Pro

babili

ty

1.7GHz 2.2GHz

Process& AgingComp

FBBBoost

Pro

babili

ty

FrequencySource: Based on GF estimates.

Arm Cortex -M4 @ 100MHz

90% Power Advantage Over Existing Designs with Trimming at 0.4V on 22FDX

22FDX® on Arm® Cortex®-M4: Performance In IoT


90%

No Trimming(1.1V)

No Trimming(0.6V)

Trimming(0.6V)

Trimming(0.4V)

83%78%

40nm 22FDX Trimming Advantage22FDX Ultra Low

Voltage Advantage

> 300MHz at 0.4V, and a

Customer Application is

achieving 500MHz at 0.4V.

22FDX® – Superior RF/Analog Silicon data - Outperforms FinFET and other advanced nodes for fT/fMAX

nFET fmax (GHz) vs. Id (A)nFET fT (GHz) vs. Id (A)

0

50

100

150

200

250

300

350

1,E-07 1,E-05 1,E-03

Fm

ax (

GH

z)

Id (A/mm)

22FDX

FinFET

0

50

100

150

200

250

300

350

400

1,E-07 1,E-05 1,E-03

Ft

(GH

z)

Id (A/mm)

22FDX

FinFET

350GHz fT

325GHz fMAX


22FDX: eMRAM Advantages

VERSATILE


Small cell size 0.047um2

Data retention Solder reflow and auto grade

Fast write speed More than 100x faster than eFlash

Endurance ~10E8 supports working memory

Versatile Code storage and working memory

End-to-End Ecosystem Partnering for Growth

Reduce time to market,

facilitate FDX™ SoC

product design

Easy access to plug and

play solutions

Minimizes customer

development costs

Lowers barriers of migrationDesign

Services

Embedded

Software

EDA

IP

ASIC

System

IP

OSAT


35

Partner Count

11 in Europe

Value creation through

collaborative University

programs

Access to circuit design

Access to global shuttles

Customer and business

opportunity focus

Strong drive for innovation

GLOBALFOUNDRIES and Academic Collaboration


GLOBALFOUNDRIES 1




Image Recognition SOC from DREAMCHIP TECHNOLOGIES

Images courtesy of Dreamchip Technologies GmbH


The information contained herein is the property of GLOBALFOUNDRIES and/or its licensors.

This document is for informational purposes only, is current only as of the date of publication and is subject to change by GLOBALFOUNDRIES at any time without notice.

GLOBALFOUNDRIES, the GLOBALFOUNDRIES logo and combinations thereof are trademarks of GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions.

Other product or service names are for identification purposes only and may be trademarks or service marks of their respective owners.

© GLOBALFOUNDRIES Inc. 2017. Unless otherwise indicated, all rights reserved. Do not copy or redistribute except as expressly permitted by GLOBALFOUNDRIES.

Thank youDr. Gerd Teepe | Director Marketing for Europe

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