mtc-300, mtk-30, mta-300 dual scr power module - ceipsa

MTC-300, MTK-30, MTA-300 Dual SCR Power Module KKMTx300, August 2009 version

LAMINA Semiconductors International Ltd. Tel.: +48-22-7570745 Puławska 34 Fax.: +48-22-7572734 PL-05-500 Piaseczno e-mail: [email protected] POLAND www.laminasi.com.pl

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Dual SCR Power Modules are designed for use in power electronic circuits and equipment under normal operating conditions.

KEY PARAMETERS

UDRM, URRM up to 1600 V IT(AV) 300 A ITSM 8000 A

du/dt* 1000 V/s

di/dt 150 A/s * maximum (non standard) value

Designed for use in high power industrial and commercial power electronic circuits and equipment where high currents are encoutered and high reliability is essential.

ORDERING INFORMATION

When ordering please refer to device code builder presented below. Please use the complete part number when ordering, quote or in any future correspondence relating to your order.

MT -300- - 0

APPLICATION

High Voltage Power Supplies Motor Control

FEATURES

electrically isolated base high current capabilities high surge current capabilities high rates voltages low thermal impedance (Aluminium Nitride

Insulators) tested according to IEC standards compact size and small weight

Outline See package details for further information

Elements configuration (see drawings)

Voltage class (hundred volts)

du/dt (see table)

MTC-300, MTK-30, MTA-300 Dual SCR Power Module

KKMTx300, August 2009 version


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ELECTRICAL PARAMETERS

Voltage ratings

du/dt group codes

Group code du/dt

V/s

0 no specified value

5 320

6 500

7 1000

Voltage class URRM URSM IRRM

V V mA

04 400 500

30

06 600 700

08 800 900

10 1000 1100

12 1200 1300

14 1400 1500

16 1600 1700




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Electrical properties

Parameter Unit Test conditions Value

Average on-state current IT(AV) A 300

Case temperature Tc °C 85

RMS on-state current IT(RMS) A 470

Surge current ITSM A Tj=125°C, UR=0,8URRM,

tp=10ms 8000

I2t – value I

2t kA

2s 320

On-state voltage max. UTM V Tj=25°C, ITM=1500A 1,4

Treshold voltage UT(T0) V 0,70

Slope resistance rT mΩ 0,55

Latching current Il mA Tj=25°C, UD=12V 800

Holding current IH mA Tj=25°C, UD=12V 200

Circuit commutated turn-off time (typical)

tq s

Tj=125°C, ITM=250A,

diR/dt=25A/s, du/dt=20V/s, UD=0,67UDRM, URM=100V

150

Turn-0n time (typical) tgt s ITM=100A, UDM=100V 7

Rate of rise of on-state current- repetitive

di/dt A/s

Tj=125°C, ITM=3IT(AV), UD=0,67UDRM, f=50Hz, IGM=1A,

diG/dt=1A/s

150

Critical rate of raise of off-state voltage

du/dt V/s Tj=125°C, UD=0,67UDRM, 320 - 1000

Gate current to trigger IGT mA Tj=25°C, UD=12V 150

Gate voltage to trigger UGT V Tj=25°C, UD=12V 3

RMS isolation voltage Uisol V 1s, circut to base, all terminals

shorted 2500

Termal properties

Parameter Unit Test conditions Value

Thermal resistance, junction to case per thyristor/module

RthJC °C/W DC 0,11/0,055

Thermal resistance, case to heatsink per thyristor/module

RthCh °C/W 0,04/0,02

Operating junction temperature Tjmin...Tjmax °C -40...+125

Storage temperature Tstg °C -40...+125




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Mechanical properties

Cofigurations

MTC MTK MTA

Terminal number:

3 2 1 Terminal number:

3 2 1

Terminal number:

3 2 1

Parameter Unit Value

Mounting torque (M6) M1 Nm 5,00 ±15%

Terminal connection torque (M8)

M2 Nm 12,00 ±10%

Weight M g 840




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Package details

For further package information, please contact Sales & Marketing Department. All dimensions in mm, unless stated otherwise. Do not scale.




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CHARACTERISTICS

Power loss characteristics. Sinus wave form.IT(AV)

, [A]

0 40 80 120 160 200 240 280 320

PT(AV)

, [W]

0

50

100

150

200

250

300

350

Q

30o

60o

90o

120o

180o

1/2 x MTx-300

Case temperature ratings. Sinus wave form.IT(AV)

, [A]

0 50 100 150 200 250 300 350

TC, [

oC]

70

80

90

100

110

120

130

Q

30o

60o

90o

120o

180o

1/2 x MTx-300

Power loss characteristics. Square wave form.IT(AV)

, [A]

0 50 100 150 200 250 300 350 400 450 500

PT(AV)

, [W]

0

100

200

300

400

500

Q

30o

60o

90o

120o

180o

DC1/2 x MTx-300

Case temperature ratings. Square wave form.IT(AV)

, [A]

0 100 200 300 400 500

TC, [

oC]

60

70

80

90

100

110

120

130

Q

30o

60o

90o

120o

180o

DC

1/2 x MTx-300




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Power loss characteristic per module IRMS, A

0 100 200 300 400 500 600 700

Ptot, W

0

100

200

300

400

500

600

700

1 x MTC-300W1

Power loss per module vs case temperature Ta,

oC

0 20 40 60 80 100 120 140

Ptot, W

0

100

200

300

400

500

600

700R

thca

1,5

1,0

0,8

0,6

0,4

0,2

0,15

0,1 0,07 0,05 0,035 0,02

0,3

Tc,oC

125

119

113

107

101

95

89

83

Power loss characteristics of two modules ID, A

0 100 200 300 400 500 600 700

Ptot, W

0

250

500

750

1000

1250

1500

R L

2 x MTx-300 B2

Power loss of two modules vs case temperature Ta,

oC

0 20 40 60 80 100 120 140

Ptot, W

0

250

500

750

1000

1250

1500

Rthca

1,5

1,00,8

0,6

0,4

0,2

0,15

0,1

0,07

0,05 0,035 0,02

0,3

Tc,oC

125

117,5

110

102,5

95

87,5

80




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Power loss characteristics of three modules IRMS

,ID, A

0 150 300 450 600 750 900

Ptot, W

0

400

800

1200

1600

2000

3 x MTx-300B6W3

Power loss of three modules vs case temperature Ta,

oC

0 20 40 60 80 100 120 140

Ptot, W

0

400

800

1200

1600

2000

Rthca

1,51,0

0,8

0,6

0,4

0,2

0,15

0,1

0,07

0,05

0,035 0,02

0,3

Tc,oC

125

117

108

100

92

84

ITM

, A

10 100 1000 10000

UTM

, V

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

Tj=T

jmax

On-state characteristic

1/2 x MTT-3001/2 x MTx-300

n1 10 100

ITSM

, [kA]

4,0

4,5

5,0

5,5

6,0

6,5

7,0

7,5

8,0

8,5

Tj=T

jmax

UR=0,8U

RRM

Non-repetitive surge current rating

1/2 x MTx-300




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t, s0,001 0,01 0,1 1 10

Zth(t)

, oC/W

0,001

0,01

0,1

1

Transient thermal impedance

1/2 x MDD-1701/2 x MTx-300

GATE CHARACTERISTICS

Gate characteristic. Possible trigger area.u

G, V

0 1 2 3 4

iG, mA

0

75

150

225

300

375

Tj=+25oC

Tj=-40oC

Tj=+125oC

Gate characteristic.A - possible trigger area

B - permitted gate pulse forcing areaR - recommended gate drive load line

uG, V

0 5 10 15 20

iG, A

0

1

2

3

4

IFGM=4A

UFGM=20V

PGM=16W

A

BR




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HEATSINKS

LAMINA S.I. has its own proprietary range of extruded aluminium heatsinks designed to optimise the performance of our semiconductors with natural and forced air flow.

POWER ASSEMBLY CAPABILITY

LAMINA S.I. provides a support for those customers requiring more than a basic semiconductor and offers precisely assembled Power Blocks according to factory or customer standards.

mtc-300, mtk-30, mta-300 dual scr power module - ceipsa

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