External Use

External Use SILICON SYSTEMS GROUP

Applied Centura® Tetra™ EUV Mask Etch System

Silicon Systems Group Sept 19th, 2011

Enabling EUV Photomask Technology

External Use

Applied’s Innovations Enabling Inflections

Mesa™ Etch

UVision® 4 Brightfield Raider-S™ ECD

InVia™ CVD

Avila™ CVD

Tetra™ X

Aera3™

Centris™ Etch

Silvia™ Etch

Centinel™ PVD / ALD

Reflexion® GT™ for Cu

Raider ® GT

DFinder™ Inspection

Astra™ DSA Anneal

Siconi™ for Epi

Avenir™ RF PVD Gate

Eterna™ FCVD

Avenir™ RF PVD Ni

Conforma™ Doping

Reflexion® GT™ for W

Vantage Vulcan™ RTP

SIP™ Co PVD

Versa™ XLR PVD

Nanocure™ 3

Black Diamond® 3

DPN HD

Centura High-k ALD

Tetra™ EUV

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TRANSISTOR INTERCONNECT ADVANCED PATTERNING

WAFER-LEVEL PACKAGING

External Use

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The Photomask transfers a patterned image onto a wafer

External Use

External Use

SILICON SYSTEMS GROUP SILICON SYSTEMS GROUP 4

EUVL* Infrastructure Is Under Development

Source Discharge-Produced Plasma

Laser-Produced Plasma

Optics Reflective Optics

6 Projection Mirrors

Vacuum Contained

Photomask Mask Blank

Mask Etch Mask Clean

Ready for Scanner

Mask Write

Mask Inspect

Resist Incoming Wafer

Ready for Scanner

Resist Deposition

Pattern Transfer

Photomask etch is a critical technology for EUVL transition * EUVL = Extreme Ultra-Violet Lithography

M1

M2

M3

M4

M5 M6

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External Use

SILICON SYSTEMS GROUP SILICON SYSTEMS GROUP 5

* ARC = Anti-Reflective Coating

Conventional lithography Transmission photomask

4 layers, 4 materials

EUV lithography Reflection photomask 106 layers, 8 materials

Backside Conducting Layer

Doped Fused Silica Substrate

Resist ARC Film

Absorber Layer Capping Layer Bragg Reflector (100 layers)

Photomask Sees Paradigm Change With EUVL

Fused Silica Substrate

Resist

Absorber Layer

ARC* Film

Short EUV wavelength would be absorbed in a transmission mask

External Use

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Mask

Wafer Resist

Source

Mirrors M1

M2

M3

M4

M5

M6

Mask

Projection Lens

Wafer Resist

Source

Conventional lithography Transmission-based

On-axis optics

EUV lithography Reflection-based

Off-axis optics

Reference: Banqiu Wu and Ajay Kumar, Applied Materials, Extreme Ultraviolet Lithography, May 2009

EUV Photomask As Deployed In Reflection Mode

Image transfer pathway has now changed

External Use

External Use

SILICON SYSTEMS GROUP SILICON SYSTEMS GROUP

Image Resolution Drives Mask Evolution Increases Mask Etch Challenge

A. Altering features on mask to achieve desired feature shapes on wafer

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(a) No OPC* (b) Mild OPC Size adjustment

(c) Medium OPC Hammerheads + serifs

(d) Aggressive OPC Scatter bars + serifs

B. New materials on mask improve resolution using interference techniques

Absorber layer ARC layer

Resist

Fused silica substrate Fused silica substrate

Phase shift layer Absorber layer

ARC layer Resist

Fused silica substrate

C. Wavelength shrink requires complex reflector element Bragg Reflector

(100 layers)

* OPC = Optical Proximity Correction | Source: B. Enyon & B. Wu, Photomask Fabrication Technology, Lithography, 2005

Phase shift mask Includes phase shift layer

Binary mask

External Use

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Technology Node

Mas

k E

tch

Cha

lleng

e

130nm 90nm 32nm 15nm 65nm 45nm 22nm 10nm

Tetra 2001

Tetra II 2005

Tetra III 2007

Tetra X 2010

Tetra EUV 2011

Mild OPC

Moderate OPC

Aggressive OPC

Mean-to-Target

Binary mask Phase shift mask

Phase shift mask

Advanced binary mask Phase shift

mask

Reflective mask

Zero-loss cap layer

Vertical sidewalls

Zero defects

Mean-to-Target

EUVL* Regime Conventional Regime

* EUVL = Extreme Ultraviolet lithography | Mean-to-Target is a mask-to-mask repeatability measurement

A Decade Of Tetra Product Leadership Delivering Innovations For Customer Needs

External Use

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Patterned Mask Post ARC + Absorber Etch

Vertical sidewalls (90º ± 0.5º) needed for off-axis optics

Ultra-low defectivity enabled by new chemistry and chamber

Best-in-class CD* uniformity

New process to etch new materials; no cap layer removal

Resist

ARC Layer Absorber Layer Capping Layer Bragg Reflector (100 layers)

Leadership For The Next Decade Tetra EUV Offers The Ideal Anisotropic Etch

Doped Fused Silica Substrate

* CD = Critical dimension

External Use

Best-in-class technology and product engineering teams

Focused on strong customer support with a global footprint

Advanced services offerings for high tool uptime & productivity

EUVL review papers in top tier journals like APL*, JVST*

Authored subject-matter-expertise books on EUVL

Characterization

Full suite of metrology and inspection tools in the lab

In-house demo tools to etch conventional and EUV masks

Technology Leadership Team

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Applied Mask Etch Lab Unequaled Customer Engagement Capability

* APL = Applied Physics Letters | * JVST = Journal of Vacuum Science and Technology

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