advance datasheet revision: april 2015...phone: (310) 814-5000 • fax: (310) 812-7011 • e-mail:...

Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or

conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration

Regulations (EAR).

Advance Datasheet Revision: April 2015

APN250 10-14 GHz GaN Power Amplifier

Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation

Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]

Product Features

RF frequency: 10 to 14 GHz

Linear Gain: 13 dB typ.

P1dB: 39 dBm typ

Psat: 42 dBm typ.

PAE% @ Psat: 37% typ.

Die Size: 18.5 sq. mm.

0.2um GaN HEMT Process

4 mil SiC substrate

DC Power: 28 VDC @ 1280 mA

Product Description The APN250 monolithic GaN HEMT amplifier

is a broadband, balanced Single Stage

power device, designed for use in SATCOM

Terminals and point-to-point digital radios. To

ensure rugged and reliable operation, HEMT

devices are fully passivated. Both bond pad

and backside metallization are Au-based that

is compatible with epoxy and eutectic die

attach methods.

Applications

Point-to-Point Digital Radios

Point-to-Multipoint Digital Radios

VSAT

Test Instrumentation

Performance Characteristics (Ta = 25°C)

Absolute Maximum Ratings (Ta = 25°C)

X = 4300 um Y = 4300 um

Specification Min Typ Max Unit

Frequency 10 14 GHz

Linear Gain 12 13 dB

Input Return Loss 20 25 dB

Output Return Loss 20 25 dB

P1dB (Pulsed) 39 dBm

Psat (Pulsed) 40.5 42 dBm

PAE @ Psat 37 %

PGain @ Pin=32 dBm 9.5 dB

Vd1=Vd1a 22 V

Vg, Vg1a -3.5 V

Id1 640 mA

Id1a 640 mA

Parameter Min Max Unit

Vd1=Vd1a 18 28 V

Id1, Id1a 800 mA

Vg1, Vg1a -5 0 V

Input drive level TBD dBm

Assy. Temperature 300 deg. C

(TBD seconds)



Regulations (EAR).





-40

-35

-30

-25

-20

-15

-10

-5

0

0 2 4 6 8 10 12 14 16 18 20 22 24

Inp

ut

Retu

rn L

oss (

dB

)

Frequency (GHz)

-40

-35

-30

-25

-20

-15

-10

-5

0

0 2 4 6 8 10 12 14 16 18 20 22 24

Ou

tpu

t R

etu

rn L

oss (

dB

)

Frequency (GHz)

0

2

4

6

8

10

12

14

16

18

20

6 7 8 9 10 11 12 13 14 15 16

Gain

(d

B)

Frequency (GHz)

-20

-10

0

10

20

30

40

50

9 10 11 12 13 14

Po

ut

(dB

m),

Gain

(d

B),

PA

E%

Frequency (GHz)

Linear Gain (dB)

Gain @ Pin=0 dBm

PGain@Pin=32dBm (dB)

P1dB (dBm)

Psat (dBm)

PAE% @ PSat

Max PAE%

Linear Gain vs. Frequency

Measured On-Wafer Performance Characteristics (Typical Performance at 25°C)

Vd1 = Vd1a = 22 V, Id1, Id1a = 640 mA*

Input Return Loss vs. Frequency

Power**, Gain, PAE% vs. Frequency

Output Return Loss vs. Frequency

* Pulsed-Power On-Wafer



Regulations (EAR).





0

100

200

300

400

500

600

700

800

900

1000

1100

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32

Id1 (

mA

)

Input Power (dBm)

Id1 10 GHz

Id1 11 GHz

Id1 12 GHz

Id1 13 GHz

0

5

10

15

20

25

30

35

40

45

0

2

4

6

8

10

12

14

16

18

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32

Po

ut

(dB

m)

Gain

(d

B)

Input Power (dBm)

Gain 10 GHz Gain 11 GHz

Gain 12 GHz Gain 13 GHz

Pout 10 GHz Pout 11 GHz

Pout 12 GHz Pout 13 GHz

Pout

Gain

0

5

10

15

20

25

30

35

40

45

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32

PA

E%

Input Power (dBm)

10 GHz

11 GHz

12 GHz

13 GHz

Pout & Gain Vs. vs. Pin

Id vs. Pin

PAE% vs. Pin

* On-Wafer Pulsed-Power

Pout, Gain & PAE% vs. Frequency

-20

-10

0

10

20

30

40

50

9 10 11 12 13 14

Po

ut

(dB

m),

Gain

(d

B),

PA

E%

Frequency (GHz)

Linear Gain (dB)

Gain @ Pin=0 dBm

PGain@Pin=32dBm (dB)

P1dB (dBm)

Psat (dBm)

PAE% @ PSat

Max PAE%


Vd1 = Vd1a = 22 V, Id1, Id1a = 640 mA*



Regulations (EAR).





0

5

10

15

20

25

30

35

40

45

0

2

4

6

8

10

12

14

16

18

0 5 10 15 20 25 30 35

Po

we

r (d

Bm

)

Gai

n (

dB

)

Input Power (dBm)

Gain @ 10GHz Gain @ 11GHzGain @ 12GHz Gain @ 13GHzGain @ 14GHz Pout @ 10GHzPout @ 11GHz Pout @ 12GHzPout @ 13GHz Pout @ 14GHz

Pout, Gain vs. Pin

Id vs. Pin

PAE% vs. Pin

* CW Fixture


Measured Fixtured Performance Characteristics (Typical Performance at 25°C)

Vd1 = Vd1a = 20 V, Id = Id1+Id1a = 1280 mA*

0

5

10

15

20

25

30

35

40

45

10 11 12 13 14

Po

we

r (d

Bm

), G

ain

(d

b),

PA

E%

Frequency (GHz)

Gain @ Pin=0dBm P1dB (dBm)

P3dB (dBm) PAE% @ P3dB

PAE% Max

02468

10121416182022242628303234363840

0 5 10 15 20 25 30 35

PA

E%

Pin (dBm)

PAE @ 10GHz PAE @ 11GHzPAE @ 12GHz PAE @ 13GHzPAE @ 14GHz

0100200300400500600700800900

1000110012001300140015001600170018001900200021002200

0 5 10 15 20 25 30 35

Id (

ma)

Input Power (dBm)

Id @ 10GHz Id @ 11GHzId @ 12GHz Id @ 13GHzId @ 14GHz



Regulations (EAR).





02468

10121416182022242628303234363840

0 5 10 15 20 25 30 35

PA

E%

Input Power (dBm)

PAE @ 10GHz PAE @ 11GHzPAE @ 12GHz PAE @ 13GHzPAE @ 14GHz

0

5

10

15

20

25

30

35

40

45

10 11 12 13 14

Po

we

r (d

Bm

), G

ain

(d

b),

PA

E%

Frequency (GHz)



PAE% Max

0

5

10

15

20

25

30

35

40

45

0

2

4

6

8

10

12

14

16

18

0 5 10 15 20 25 30 35

Po

we

r (d

Bm

)

Gai

n (

dB

)

Input Power (dBm)


Pout, Gain vs. Pin

Id vs. Pin

PAE% vs. Pin

* CW Fixture


Measured Fixtured Performance Characteristics (Typical Performance at 25°C)


0100200300400500600700800900

1000110012001300140015001600170018001900200021002200

0 5 10 15 20 25 30 35

Id (

ma)

Input Power (dBm)




Regulations (EAR).





02468

10121416182022242628303234363840

0 5 10 15 20 25 30 35

PA

E%

Input Power (dBm)

PAE @ 10GHz

PAE @ 11GHz

PAE @ 12GHz

PAE @ 13GHz

PAE @ 14GHz

0

5

10

15

20

25

30

35

40

45

10 11 12 13 14

Po

we

r (d

Bm

), G

ain

(d

b),

PA

E%

Frequency (GHz)



PAE% Max

0

5

10

15

20

25

30

35

40

45

0

2

4

6

8

10

12

14

16

18

0 5 10 15 20 25 30 35

Po

we

r (d

Bm

)

Gai

n (

dB

)

Input Power (dBm)


Pout, Gain vs. Pin

Id vs. Pin

PAE% vs. Pin

* CW Fixture


Measured Fixture Performance Characteristics (Typical Performance at 25°C)


0100200300400500600700800900

1000110012001300140015001600170018001900200021002200

0 5 10 15 20 25 30 35

Id (

ma)

Input Power (dBm)




Regulations (EAR).





* Pulsed-Power On-Wafer

Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang

8.0 0.788 -175.150 0.056 -69.128 0.002 -149.171 0.624 145.730

8.5 0.792 177.549 0.054 -50.533 0.003 100.724 0.595 126.795

9.0 0.782 169.211 0.081 -26.971 0.005 98.959 0.528 102.406

9.5 0.767 160.468 0.171 -9.116 0.006 84.303 0.455 75.452

10.0 0.743 148.982 0.425 -13.926 0.002 39.443 0.386 43.034

10.5 0.685 136.345 1.041 -37.959 0.004 45.457 0.307 6.553

11.0 0.606 120.640 2.053 -72.411 0.005 78.299 0.252 -24.432

11.5 0.461 101.870 3.697 -111.478 0.004 -19.991 0.229 -50.326

12.0 0.305 82.279 5.877 -156.942 0.006 22.788 0.215 -71.266

12.5 0.140 57.241 7.944 156.616 0.006 -11.884 0.209 -83.304

13.0 0.033 -7.924 9.536 110.075 0.004 -57.805 0.223 -95.152

13.5 0.107 -101.508 10.221 65.248 0.007 -38.639 0.217 -111.473

14.0 0.192 -119.288 10.070 25.403 0.002 -170.834 0.204 -115.664

14.5 0.245 -134.405 10.015 -11.781 0.002 -161.559 0.172 -119.745

15.0 0.273 -143.902 10.061 -47.813 0.002 64.799 0.174 -116.071

15.5 0.254 -141.837 9.979 -83.956 0.004 125.238 0.186 -115.597

16.0 0.259 -133.613 9.615 -121.442 0.004 51.271 0.205 -120.465

16.5 0.348 -122.232 8.968 -159.474 0.005 5.375 0.227 -134.886

17.0 0.477 -126.098 8.065 162.641 0.005 -6.692 0.200 -153.352

17.5 0.569 -132.862 6.836 125.406 0.008 -53.726 0.144 -179.669

18.0 0.662 -139.509 5.673 90.341 0.004 -176.720 0.062 117.915

18.5 0.725 -148.466 4.646 55.355 0.003 -141.496 0.101 25.350

19.0 0.769 -155.321 3.720 20.982 0.007 -102.598 0.209 -8.918

19.5 0.807 -160.898 2.978 -12.195 0.002 -161.597 0.322 -25.318

20.0 0.845 -166.839 2.350 -46.408 0.006 111.398 0.433 -39.840

20.5 0.865 -171.744 1.839 -81.138 0.002 -135.188 0.545 -54.065

21.0 0.895 -176.622 1.404 -118.400 0.005 -152.650 0.647 -65.974

21.5 0.910 178.326 1.002 -159.002 0.005 76.670 0.747 -76.390

22.0 0.925 173.710 0.627 159.607 0.009 87.246 0.832 -89.068

22.5 0.923 169.561 0.341 122.484 0.005 -140.272 0.873 -99.611

23.0 0.931 165.925 0.173 92.298 0.010 115.686 0.903 -108.257

23.5 0.934 162.265 0.087 68.801 0.005 68.757 0.918 -116.042

24.0 0.940 159.140 0.043 52.012 0.007 102.110 0.933 -122.749

Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang

2.0 0.820 -65.461 0.065 -106.660 0.002 155.653 0.716 -179.860

2.5 0.754 -81.017 0.131 -127.922 0.004 -153.056 0.605 161.581

3.0 0.701 -95.289 0.187 -162.120 0.005 75.662 0.590 148.317

3.5 0.629 -108.778 0.222 174.631 0.002 -18.762 0.587 130.937

4.0 0.566 -123.725 0.268 155.688 0.002 140.685 0.566 114.786

4.5 0.498 -138.593 0.338 136.618 0.006 92.027 0.510 97.370

5.0 0.440 -152.317 0.434 117.681 0.006 53.131 0.469 79.660

5.5 0.372 -166.123 0.570 96.851 0.006 32.327 0.405 62.223

6.0 0.323 179.670 0.760 74.152 0.012 1.995 0.345 44.786

6.5 0.262 164.893 0.991 48.828 0.012 -39.117 0.288 27.393

7.0 0.221 151.577 1.278 21.180 0.017 -58.088 0.228 9.534

7.5 0.178 134.537 1.609 -8.032 0.020 -89.071 0.178 -8.533

8.0 0.147 122.335 1.971 -37.638 0.023 -115.822 0.136 -27.674

8.5 0.117 93.874 2.412 -67.898 0.032 -146.204 0.098 -47.492

9.0 0.095 73.743 2.991 -99.133 0.047 -177.428 0.077 -77.161

9.5 0.097 27.863 3.683 -133.826 0.061 151.774 0.063 -108.207

10.0 0.070 -14.142 4.429 -172.232 0.072 107.605 0.062 -142.100

10.5 0.087 -54.384 4.884 145.962 0.086 71.842 0.060 151.251

11.0 0.064 -105.853 4.953 105.050 0.093 31.185 0.064 88.753

11.5 0.050 -116.373 4.764 66.653 0.088 -4.913 0.055 30.481

12.0 0.011 -176.530 4.604 30.502 0.092 -38.570 0.042 -19.651

12.5 0.029 -87.427 4.610 -5.828 0.094 -76.291 0.042 -46.945

13.0 0.019 -106.398 4.697 -46.144 0.096 -114.334 0.044 -58.983

13.5 0.016 -61.795 4.680 -92.107 0.099 -157.632 0.056 -85.824

14.0 0.043 -29.612 4.092 -146.004 0.089 148.271 0.038 -140.276

14.5 0.064 -63.869 2.762 161.390 0.065 97.657 0.022 -2.230

15.0 0.064 -96.847 1.611 119.370 0.040 54.150 0.082 -55.593

15.5 0.015 -139.357 0.922 86.830 0.021 22.202 0.109 -87.029

16.0 0.023 -26.789 0.553 60.210 0.018 -3.703 0.128 -109.362

16.5 0.074 17.693 0.344 36.828 0.010 -11.102 0.132 -128.407

17.0 0.092 -21.030 0.221 16.314 0.007 -48.648 0.133 -143.166

17.5 0.151 -20.380 0.146 -1.970 0.001 -45.067 0.122 -158.706

18.0 0.165 -42.982 0.100 -18.222 0.002 -49.744 0.108 -171.736


Vd1 = Vd1a = 22 V, Id1, Id1a = 640 mA*



Regulations (EAR).





Die Size and Bond Pad Locations (Not to Scale)

X = 4300 25 µm Y = 4300 25 µm DC Bond Pad = 100 x 100 0.5 µm RF Bond Pad = 100 x 100 0.5 µm Chip Thickness = 101 5 µm

Biasing/De-Biasing Details:

APN250 should be biased the top and bottom of the die. For best performance each side should be biased

up separately, but they can be tied together.

Listed below are some guidelines for GaN device testing and wire bonding: a. Limit positive gate bias (G-S or G-D) to < 1V

b. Know your devices’ breakdown voltages

c. Use a power supply with both voltage and current limit.

d. With the power supply off and the voltage and current levels at minimum, attach the ground lead to

your test fixture.

i. Apply negative gate voltage (-5 V) to ensure that all devices are off

ii. Ramp up drain bias to ~10 V

iii. Gradually increase gate bias voltage while monitoring drain current until 20% of the operating

current is achieved

iv. Ramp up drain to operating bias

v. Gradually increase gate bias voltage while monitoring drain current until the operating current

is achieved

e. Repeat bias procedure for each amplifier stage

f. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable):

i. Gradually decrease drain bias to 0 V.

ii. Gradually decrease gate bias to 0 V.

iii. Turn off supply voltages

g. Repeat de-bias procedure for each amplifier stage

4300 µm

4300 µm

1220 µm

3080 µm

1768 µm

1368 µm

1768 µm

1368 µm

RFIN

GND

GND

GN

D

GN

D

VD

1A

VG

1A

V

G1

RFOUT GND

GN

D

GN

D

VD

1

GND



Regulations (EAR).





RFIN

GND

GND

GN

D

GN

D

VD

1A

VG

1A

V

G1

RFOUT GND

GN

D

GN

D

VD

1

GND

Recommended Assembly Notes

1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils

from the amplifier.

2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.

3. Part must be biased from both sides as indicated.

4. The 0.1uF, 50V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device

is to be used, do NOT use the 0.1uF , 50V Capacitors.

Mounting Processes

Most Northrop Grumman Aerospace Systems (NGAS) GaN IC chips have a gold backing and can be

mounted successfully using either a conductive epoxy or AuSn attachment. NGAS recommends the use of

AuSn for high power devices to provide a good thermal path and a good RF path to ground. Maximum

recommended temp during die attach is 320oC for 30 seconds.

Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the

pick up tool.

CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN

CHIPS.

Suggested Bonding Arrangement

RF

Output

Substrate

RF

Input

Substrate

= 100 pF, 15V (Shunt)

= 10 Ohms, 30V (Series)

= 0.01uF, 15V (Shunt)

PLEASE ALSO REFER TO OUR “GaN Chip Handling Application Note” BEFORE HANDLING,

ASSEMBLING OR BIASING THESE MMICS!

= 0.1uF, 15V (Shunt)

= 100 pF, 50V (Shunt)

= 0.01uF, 50V (Shunt)

= 0.1uF, 50V (Shunt) [4]

VD1a VG1a

[4]

Approved for Public Release: Northrop Grumman Case 15-0876, 04/29/15

VD1 VG1

[4]

Note: APN250 must be biased from

the top and bottom bias pads.

advance datasheet revision: april 2015...phone: (310) 814-5000 • fax: (310) 812-7011 • e-mail:...

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