Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Advance Datasheet Revision: April 2015
APN250 10-14 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Product Features
RF frequency: 10 to 14 GHz
Linear Gain: 13 dB typ.
P1dB: 39 dBm typ
Psat: 42 dBm typ.
PAE% @ Psat: 37% typ.
Die Size: 18.5 sq. mm.
0.2um GaN HEMT Process
4 mil SiC substrate
DC Power: 28 VDC @ 1280 mA
Product Description The APN250 monolithic GaN HEMT amplifier
is a broadband, balanced Single Stage
power device, designed for use in SATCOM
Terminals and point-to-point digital radios. To
ensure rugged and reliable operation, HEMT
devices are fully passivated. Both bond pad
and backside metallization are Au-based that
is compatible with epoxy and eutectic die
attach methods.
Applications
Point-to-Point Digital Radios
Point-to-Multipoint Digital Radios
VSAT
Test Instrumentation
Performance Characteristics (Ta = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
X = 4300 um Y = 4300 um
Page 1
Specification Min Typ Max Unit
Frequency 10 14 GHz
Linear Gain 12 13 dB
Input Return Loss 20 25 dB
Output Return Loss 20 25 dB
P1dB (Pulsed) 39 dBm
Psat (Pulsed) 40.5 42 dBm
PAE @ Psat 37 %
PGain @ Pin=32 dBm 9.5 dB
Vd1=Vd1a 22 V
Vg, Vg1a -3.5 V
Id1 640 mA
Id1a 640 mA
Parameter Min Max Unit
Vd1=Vd1a 18 28 V
Id1, Id1a 800 mA
Vg1, Vg1a -5 0 V
Input drive level TBD dBm
Assy. Temperature 300 deg. C
(TBD seconds)
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Advance Datasheet Revision: April 2015
APN250 10-14 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
-40
-35
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22 24
Inp
ut
Retu
rn L
oss (
dB
)
Frequency (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22 24
Ou
tpu
t R
etu
rn L
oss (
dB
)
Frequency (GHz)
0
2
4
6
8
10
12
14
16
18
20
6 7 8 9 10 11 12 13 14 15 16
Gain
(d
B)
Frequency (GHz)
-20
-10
0
10
20
30
40
50
9 10 11 12 13 14
Po
ut
(dB
m),
Gain
(d
B),
PA
E%
Frequency (GHz)
Linear Gain (dB)
Gain @ Pin=0 dBm
PGain@Pin=32dBm (dB)
P1dB (dBm)
Psat (dBm)
PAE% @ PSat
Max PAE%
Linear Gain vs. Frequency
Measured On-Wafer Performance Characteristics (Typical Performance at 25°C)
Vd1 = Vd1a = 22 V, Id1, Id1a = 640 mA*
Input Return Loss vs. Frequency
Power**, Gain, PAE% vs. Frequency
Output Return Loss vs. Frequency
* Pulsed-Power On-Wafer
Page 2
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Advance Datasheet Revision: April 2015
APN250 10-14 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
0
100
200
300
400
500
600
700
800
900
1000
1100
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Id1 (
mA
)
Input Power (dBm)
Id1 10 GHz
Id1 11 GHz
Id1 12 GHz
Id1 13 GHz
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
14
16
18
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Po
ut
(dB
m)
Gain
(d
B)
Input Power (dBm)
Gain 10 GHz Gain 11 GHz
Gain 12 GHz Gain 13 GHz
Pout 10 GHz Pout 11 GHz
Pout 12 GHz Pout 13 GHz
Pout
Gain
0
5
10
15
20
25
30
35
40
45
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
PA
E%
Input Power (dBm)
10 GHz
11 GHz
12 GHz
13 GHz
Pout & Gain Vs. vs. Pin
Id vs. Pin
PAE% vs. Pin
* On-Wafer Pulsed-Power
Page 3
Pout, Gain & PAE% vs. Frequency
-20
-10
0
10
20
30
40
50
9 10 11 12 13 14
Po
ut
(dB
m),
Gain
(d
B),
PA
E%
Frequency (GHz)
Linear Gain (dB)
Gain @ Pin=0 dBm
PGain@Pin=32dBm (dB)
P1dB (dBm)
Psat (dBm)
PAE% @ PSat
Max PAE%
Measured On-Wafer Performance Characteristics (Typical Performance at 25°C)
Vd1 = Vd1a = 22 V, Id1, Id1a = 640 mA*
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Advance Datasheet Revision: April 2015
APN250 10-14 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35
Po
we
r (d
Bm
)
Gai
n (
dB
)
Input Power (dBm)
Gain @ 10GHz Gain @ 11GHzGain @ 12GHz Gain @ 13GHzGain @ 14GHz Pout @ 10GHzPout @ 11GHz Pout @ 12GHzPout @ 13GHz Pout @ 14GHz
Pout, Gain vs. Pin
Id vs. Pin
PAE% vs. Pin
* CW Fixture
Page 4
Pout, Gain & PAE% vs. Frequency
Measured Fixtured Performance Characteristics (Typical Performance at 25°C)
Vd1 = Vd1a = 20 V, Id = Id1+Id1a = 1280 mA*
0
5
10
15
20
25
30
35
40
45
10 11 12 13 14
Po
we
r (d
Bm
), G
ain
(d
b),
PA
E%
Frequency (GHz)
Gain @ Pin=0dBm P1dB (dBm)
P3dB (dBm) PAE% @ P3dB
PAE% Max
02468
10121416182022242628303234363840
0 5 10 15 20 25 30 35
PA
E%
Pin (dBm)
PAE @ 10GHz PAE @ 11GHzPAE @ 12GHz PAE @ 13GHzPAE @ 14GHz
0100200300400500600700800900
1000110012001300140015001600170018001900200021002200
0 5 10 15 20 25 30 35
Id (
ma)
Input Power (dBm)
Id @ 10GHz Id @ 11GHzId @ 12GHz Id @ 13GHzId @ 14GHz
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Advance Datasheet Revision: April 2015
APN250 10-14 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
02468
10121416182022242628303234363840
0 5 10 15 20 25 30 35
PA
E%
Input Power (dBm)
PAE @ 10GHz PAE @ 11GHzPAE @ 12GHz PAE @ 13GHzPAE @ 14GHz
0
5
10
15
20
25
30
35
40
45
10 11 12 13 14
Po
we
r (d
Bm
), G
ain
(d
b),
PA
E%
Frequency (GHz)
Gain @ Pin=0dBm P1dB (dBm)
P3dB (dBm) PAE% @ P3dB
PAE% Max
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35
Po
we
r (d
Bm
)
Gai
n (
dB
)
Input Power (dBm)
Gain @ 10GHz Gain @ 11GHzGain @ 12GHz Gain @ 13GHzGain @ 14GHz Pout @ 10GHzPout @ 11GHz Pout @ 12GHzPout @ 13GHz Pout @ 14GHz
Pout, Gain vs. Pin
Id vs. Pin
PAE% vs. Pin
* CW Fixture
Page 5
Pout, Gain & PAE% vs. Frequency
Measured Fixtured Performance Characteristics (Typical Performance at 25°C)
Vd1 = Vd1a = 24 V, Id = Id1+Id1a = 1280 mA*
0100200300400500600700800900
1000110012001300140015001600170018001900200021002200
0 5 10 15 20 25 30 35
Id (
ma)
Input Power (dBm)
Id @ 10GHz Id @ 11GHzId @ 12GHz Id @ 13GHzId @ 14GHz
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Advance Datasheet Revision: April 2015
APN250 10-14 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
02468
10121416182022242628303234363840
0 5 10 15 20 25 30 35
PA
E%
Input Power (dBm)
PAE @ 10GHz
PAE @ 11GHz
PAE @ 12GHz
PAE @ 13GHz
PAE @ 14GHz
0
5
10
15
20
25
30
35
40
45
10 11 12 13 14
Po
we
r (d
Bm
), G
ain
(d
b),
PA
E%
Frequency (GHz)
Gain @ Pin=0dBm P1dB (dBm)
P3dB (dBm) PAE% @ P3dB
PAE% Max
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35
Po
we
r (d
Bm
)
Gai
n (
dB
)
Input Power (dBm)
Gain @ 10GHz Gain @ 11GHzGain @ 12GHz Gain @ 13GHzGain @ 14GHz Pout @ 10GHzPout @ 11GHz Pout @ 12GHzPout @ 13GHz Pout @ 14GHz
Pout, Gain vs. Pin
Id vs. Pin
PAE% vs. Pin
* CW Fixture
Page 6
Pout, Gain & PAE% vs. Frequency
Measured Fixture Performance Characteristics (Typical Performance at 25°C)
Vd1 = Vd1a = 28 V, Id = Id1+Id1a = 1280 mA*
0100200300400500600700800900
1000110012001300140015001600170018001900200021002200
0 5 10 15 20 25 30 35
Id (
ma)
Input Power (dBm)
Id @ 10GHz Id @ 11GHzId @ 12GHz Id @ 13GHzId @ 14GHz
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Advance Datasheet Revision: April 2015
APN250 10-14 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
* Pulsed-Power On-Wafer
Page 7
Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
8.0 0.788 -175.150 0.056 -69.128 0.002 -149.171 0.624 145.730
8.5 0.792 177.549 0.054 -50.533 0.003 100.724 0.595 126.795
9.0 0.782 169.211 0.081 -26.971 0.005 98.959 0.528 102.406
9.5 0.767 160.468 0.171 -9.116 0.006 84.303 0.455 75.452
10.0 0.743 148.982 0.425 -13.926 0.002 39.443 0.386 43.034
10.5 0.685 136.345 1.041 -37.959 0.004 45.457 0.307 6.553
11.0 0.606 120.640 2.053 -72.411 0.005 78.299 0.252 -24.432
11.5 0.461 101.870 3.697 -111.478 0.004 -19.991 0.229 -50.326
12.0 0.305 82.279 5.877 -156.942 0.006 22.788 0.215 -71.266
12.5 0.140 57.241 7.944 156.616 0.006 -11.884 0.209 -83.304
13.0 0.033 -7.924 9.536 110.075 0.004 -57.805 0.223 -95.152
13.5 0.107 -101.508 10.221 65.248 0.007 -38.639 0.217 -111.473
14.0 0.192 -119.288 10.070 25.403 0.002 -170.834 0.204 -115.664
14.5 0.245 -134.405 10.015 -11.781 0.002 -161.559 0.172 -119.745
15.0 0.273 -143.902 10.061 -47.813 0.002 64.799 0.174 -116.071
15.5 0.254 -141.837 9.979 -83.956 0.004 125.238 0.186 -115.597
16.0 0.259 -133.613 9.615 -121.442 0.004 51.271 0.205 -120.465
16.5 0.348 -122.232 8.968 -159.474 0.005 5.375 0.227 -134.886
17.0 0.477 -126.098 8.065 162.641 0.005 -6.692 0.200 -153.352
17.5 0.569 -132.862 6.836 125.406 0.008 -53.726 0.144 -179.669
18.0 0.662 -139.509 5.673 90.341 0.004 -176.720 0.062 117.915
18.5 0.725 -148.466 4.646 55.355 0.003 -141.496 0.101 25.350
19.0 0.769 -155.321 3.720 20.982 0.007 -102.598 0.209 -8.918
19.5 0.807 -160.898 2.978 -12.195 0.002 -161.597 0.322 -25.318
20.0 0.845 -166.839 2.350 -46.408 0.006 111.398 0.433 -39.840
20.5 0.865 -171.744 1.839 -81.138 0.002 -135.188 0.545 -54.065
21.0 0.895 -176.622 1.404 -118.400 0.005 -152.650 0.647 -65.974
21.5 0.910 178.326 1.002 -159.002 0.005 76.670 0.747 -76.390
22.0 0.925 173.710 0.627 159.607 0.009 87.246 0.832 -89.068
22.5 0.923 169.561 0.341 122.484 0.005 -140.272 0.873 -99.611
23.0 0.931 165.925 0.173 92.298 0.010 115.686 0.903 -108.257
23.5 0.934 162.265 0.087 68.801 0.005 68.757 0.918 -116.042
24.0 0.940 159.140 0.043 52.012 0.007 102.110 0.933 -122.749
Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
2.0 0.820 -65.461 0.065 -106.660 0.002 155.653 0.716 -179.860
2.5 0.754 -81.017 0.131 -127.922 0.004 -153.056 0.605 161.581
3.0 0.701 -95.289 0.187 -162.120 0.005 75.662 0.590 148.317
3.5 0.629 -108.778 0.222 174.631 0.002 -18.762 0.587 130.937
4.0 0.566 -123.725 0.268 155.688 0.002 140.685 0.566 114.786
4.5 0.498 -138.593 0.338 136.618 0.006 92.027 0.510 97.370
5.0 0.440 -152.317 0.434 117.681 0.006 53.131 0.469 79.660
5.5 0.372 -166.123 0.570 96.851 0.006 32.327 0.405 62.223
6.0 0.323 179.670 0.760 74.152 0.012 1.995 0.345 44.786
6.5 0.262 164.893 0.991 48.828 0.012 -39.117 0.288 27.393
7.0 0.221 151.577 1.278 21.180 0.017 -58.088 0.228 9.534
7.5 0.178 134.537 1.609 -8.032 0.020 -89.071 0.178 -8.533
8.0 0.147 122.335 1.971 -37.638 0.023 -115.822 0.136 -27.674
8.5 0.117 93.874 2.412 -67.898 0.032 -146.204 0.098 -47.492
9.0 0.095 73.743 2.991 -99.133 0.047 -177.428 0.077 -77.161
9.5 0.097 27.863 3.683 -133.826 0.061 151.774 0.063 -108.207
10.0 0.070 -14.142 4.429 -172.232 0.072 107.605 0.062 -142.100
10.5 0.087 -54.384 4.884 145.962 0.086 71.842 0.060 151.251
11.0 0.064 -105.853 4.953 105.050 0.093 31.185 0.064 88.753
11.5 0.050 -116.373 4.764 66.653 0.088 -4.913 0.055 30.481
12.0 0.011 -176.530 4.604 30.502 0.092 -38.570 0.042 -19.651
12.5 0.029 -87.427 4.610 -5.828 0.094 -76.291 0.042 -46.945
13.0 0.019 -106.398 4.697 -46.144 0.096 -114.334 0.044 -58.983
13.5 0.016 -61.795 4.680 -92.107 0.099 -157.632 0.056 -85.824
14.0 0.043 -29.612 4.092 -146.004 0.089 148.271 0.038 -140.276
14.5 0.064 -63.869 2.762 161.390 0.065 97.657 0.022 -2.230
15.0 0.064 -96.847 1.611 119.370 0.040 54.150 0.082 -55.593
15.5 0.015 -139.357 0.922 86.830 0.021 22.202 0.109 -87.029
16.0 0.023 -26.789 0.553 60.210 0.018 -3.703 0.128 -109.362
16.5 0.074 17.693 0.344 36.828 0.010 -11.102 0.132 -128.407
17.0 0.092 -21.030 0.221 16.314 0.007 -48.648 0.133 -143.166
17.5 0.151 -20.380 0.146 -1.970 0.001 -45.067 0.122 -158.706
18.0 0.165 -42.982 0.100 -18.222 0.002 -49.744 0.108 -171.736
Measured On-Wafer Performance Characteristics (Typical Performance at 25°C)
Vd1 = Vd1a = 22 V, Id1, Id1a = 640 mA*
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Advance Datasheet Revision: April 2015
APN250 10-14 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Die Size and Bond Pad Locations (Not to Scale)
X = 4300 25 µm Y = 4300 25 µm DC Bond Pad = 100 x 100 0.5 µm RF Bond Pad = 100 x 100 0.5 µm Chip Thickness = 101 5 µm
Biasing/De-Biasing Details:
APN250 should be biased the top and bottom of the die. For best performance each side should be biased
up separately, but they can be tied together.
Listed below are some guidelines for GaN device testing and wire bonding: a. Limit positive gate bias (G-S or G-D) to < 1V
b. Know your devices’ breakdown voltages
c. Use a power supply with both voltage and current limit.
d. With the power supply off and the voltage and current levels at minimum, attach the ground lead to
your test fixture.
i. Apply negative gate voltage (-5 V) to ensure that all devices are off
ii. Ramp up drain bias to ~10 V
iii. Gradually increase gate bias voltage while monitoring drain current until 20% of the operating
current is achieved
iv. Ramp up drain to operating bias
v. Gradually increase gate bias voltage while monitoring drain current until the operating current
is achieved
e. Repeat bias procedure for each amplifier stage
f. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable):
i. Gradually decrease drain bias to 0 V.
ii. Gradually decrease gate bias to 0 V.
iii. Turn off supply voltages
g. Repeat de-bias procedure for each amplifier stage
Page 8
4300 µm
4300 µm
1220 µm
3080 µm
1768 µm
1368 µm
1768 µm
1368 µm
RFIN
GND
GND
GN
D
GN
D
VD
1A
VG
1A
V
G1
RFOUT GND
GN
D
GN
D
VD
1
GND
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Advance Datasheet Revision: April 2015
APN250 10-14 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
RFIN
GND
GND
GN
D
GN
D
VD
1A
VG
1A
V
G1
RFOUT GND
GN
D
GN
D
VD
1
GND
Recommended Assembly Notes
1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils
from the amplifier.
2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.
3. Part must be biased from both sides as indicated.
4. The 0.1uF, 50V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device
is to be used, do NOT use the 0.1uF , 50V Capacitors.
Mounting Processes
Most Northrop Grumman Aerospace Systems (NGAS) GaN IC chips have a gold backing and can be
mounted successfully using either a conductive epoxy or AuSn attachment. NGAS recommends the use of
AuSn for high power devices to provide a good thermal path and a good RF path to ground. Maximum
recommended temp during die attach is 320oC for 30 seconds.
Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the
pick up tool.
CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN
CHIPS.
Suggested Bonding Arrangement
RF
Output
Substrate
RF
Input
Substrate
= 100 pF, 15V (Shunt)
= 10 Ohms, 30V (Series)
= 0.01uF, 15V (Shunt)
PLEASE ALSO REFER TO OUR “GaN Chip Handling Application Note” BEFORE HANDLING,
ASSEMBLING OR BIASING THESE MMICS!
= 0.1uF, 15V (Shunt)
= 100 pF, 50V (Shunt)
= 0.01uF, 50V (Shunt)
= 0.1uF, 50V (Shunt) [4]
Page 9
VD1a VG1a
[4]
Approved for Public Release: Northrop Grumman Case 15-0876, 04/29/15
VD1 VG1
[4]
Note: APN250 must be biased from
the top and bottom bias pads.