above 200 ghz on-chip cmos frequency generation, …workshop.ee.technion.ac.il/upload/files/bassam...
TRANSCRIPT
Above 200 GHz On-Chip CMOS
Frequency Generation, Transmission
and Receiving
Bassam Khamaisi
and
Eran Socher
Department of Physical Electronics
Faculty of Engineering
Tel-Aviv University
• Background and Motivation
• Signal Generation at 209-233 GHz
• Circuit topology
• Fundamental generation
• 3rd harmonic generation
• 3rd harmonic extraction
• Measurement results
• Signal Transmission at 210-227 GHz
• Transmitter characterization
• Full CMOS Imaging System at 220 GHz
• Receiver at 270 GHz
Outline
Motivation and Application
Sub-MMW MMW
Spatial Resolution
Material Transmission
Applications
Homeland security
detection of explosives
www.Teraview.com 3 3
Tumor Detection
THz gap – working at sub-MMW or THz currently relies on either
multiplying RF/mm-wave III-V-based sources or mixing optical
sources.
Component and system cost.
D. Huang et al, IEEE JSSC, vol. 43, pp. 2730-2738, 2008.
Why are Sub-MMW Systems Challenging?
Challenges to Sub-MMW Systems Based on CMOS
Why CMOS?
• CMOS is promising technology due to
1. Low cost 2. High level integration
CMOS challenges on sub-MMW
• The main challenge is signal generation with:
1. High output power 2. Wide tuning range
• Limitation of power amplification at sub-MMW band.
• Most of reported signal sources on CMOS suffer from low power and
frequency bandwidth.
E. Seok et al, ISSCC Dig. Tech. Papers, p.472 , 2008.
Signal source at 410GHz
• Power about 15nW and tuning range of 3GHz (0.73%).
• Not sufficient for practical applications.
Challenges to Sub-MMW Systems Based on CMOS
Harmonics approach:
• Generating frequencies beyond the process fmax by using
higher harmonics of a fundamental MMW CMOS source.
• Advantages:
1. Improved frequency tuning (done at fundamental).
2. Exploiting the transistor non linearity to generate
powerful signals beyond fmax.
Proposed Approach: Using Harmonics
Signal source based on differential Colpitts VCO
GND
Vg
Vdd
S
G
G
390 µ
m
440 µm
GND
Vg
Vdd
S
G
G
GND
Vg
Vdd
S
G
G
390 µ
m
440 µm
Signal Source at 209-233GHz
•Signal source based on differential Colpitts VCO
Fundamental generation
3rd harmonic generation
3rd harmonic coupling
•This topology achieves at fund:
1. Wide tuning range.
2. High output power.
(Electronic Letters, Socher and Jameson, 2011)
Several roles for the transistors:
• Introduce negative resistance to compensate tank loss.
•Buffer stage between tank and load.
•Frequency tuning by controlling bias point.
•Power matching to load stage.
Signal Source at 209-233GHz
Barkhausen criteria
0ReRe resactive ZZ 0ImIm resactive ZZ
Signal Source- Oscillation Analysis
Resonance Oscillation start-up
Signal at output Output spectrum
Gate signal
Fundamental generation
Signal Source- Oscillation Analysis
Fundamental generation
Transistor i-V model
0
0
gs t gs t
ds
k V V V VI
else
00
1
cos2
gs tV V
V
0 0
1 0
cos
2 2cos2
0
ds
kVI
else
0 1 2 3( ) cos cos2 cos3dsI I I I I
Due to inherent transistor
non-linearity:
Gate voltage
Drain current
0
tV 1V
0I
0
t
t
Signal Source- Amplitude Behavior Model
13
Fundamental generation
1
0 0
1
sin2
M
I kG
V
out
T
in
VX
I
00 ( )
( ) 1T T
l M T M TX s j RA s j G X G R
1M
T
GR
0
eff
T
eff
QR
C
RT describes the real trans-resistance
The tank trans-impedance
The large signal trans-conductance:
In oscillation, the open loop gain at SS
Signal Source- Amplitude Behavior Model
14
Fundamental generation
11 0 0sin
2
kVI
Fundamental current Fundamental voltage
Signal Source- Amplitude Behavior Model
15
3rd harmonic generation
1 03 0
sin1 cos
6
kVI
3rd harmonic current
A sufficient current magnitude in the 3rd harmonic.
MG
Signal Source- Amplitude Behavior Model
XF modeling
Transformer XF challenges:
1. Providing high enough impedance to
generate powerful fundamental and create
a significant 3rd harmonic current.
2. Coupling the 3rd harmonic to the load.
GND
Vg
Vdd
S
G
G
39
0 µ
m
440 µm
GND
Vg
Vdd
S
G
G
GND
Vg
Vdd
S
G
G
39
0 µ
m
440 µm
XF 3D layout
IN
Out
XF
Transistors
drains
Load
Signal Source- Transformer
3rd harmonic coupling
Signal Source- Transformer
XF equivalent model
Single ended transformer
3rd harmonic coupling by parasitic capacitor.
_
3
01
1
1
a
XF S
p
sLs
NZ
ssC N
_
3
1
1.2XF S
p
Zs C
Fundamental tone of signal source around 75GHz
Pout = -2dBm @ 75GHz
Phase noise = -91.15 dBc/Hz @ 1MHz Offset
GND
Vg
Vdd
S
G
G
390 µ
m
440 µm
GND
Vg
Vdd
S
G
G
GND
Vg
Vdd
S
G
G
390 µ
m
440 µm
Signal Source- Measurement
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
210
215
220
225
230
235
Freq
uen
cy
[G
Hz]
Vg [V]
Vdd
=1.2V
Vdd
=1.4V
Vdd
=1.6V
Vdd
=1.8V
205 210 215 220 225 230 235
-30
-25
-20
-15
-10
-5
Vdd
=1.2V
Vdd
=1.4V
Vdd
=1.6V
Vdd
=1.8V
Ou
tpu
t p
ow
er [
dB
m]
Frequency [GHz]
Tuning range=24GHz (10.6%) Maximum output power ≈ -6.2dBm
Signal Source at 209-233GHz
B. Khamaisi and E. Socher, IEEE MCWL, Vol. 22, No. 5, 2012.
GND
Vg
Vdd
S
G
G
390 µ
m
440 µm
GND
Vg
Vdd
S
G
G
GND
Vg
Vdd
S
G
G
390 µ
m
440 µm
Comparison of state of the art sources above 200GHz
[1] [2] [3] [3] This
work
Ref.
Super-
position
Funda
-mental
Triple-
Push
Triple-
push
3rd
Harmonic
generation
Type
90 nm
CMOS
InP 65 nm
CMOS
0.13µm
CMOS
90 nm
CMOS
Tech.
324 254 482 256 228 Freq.
[GHz]
-46 -8 -9 -17 -6.2 Output power
[dBm]
4 NA NA NA 24 Tuning Range
[GHz]
-78
(est.)
NA -76 -88
(est.)
-90.5
(est.)
PN
@ 1MHz
offset
[dBc/Hz]
0.0378
*
0.16 0.0303 0.052 0.1716 Chip size
[mm2]
12 11.7 27.5 71 77.4 DC power
[mW]
Signal Source at 209-233GHz
References
[1] D. Huang, T. R. LaRocca, M. C. F. Chang, L. Samoska, A. Fung, R. L. Campbell, and
M. Andrews, "Terahertz CMOS Frequency Generator Using Linear Superposition
Technique," Solid-State Circuits, IEEE Journal of, vol. 43, pp. 2730-2738, 2008.
[2] V. Radisic, X. B. Mei, W. R. Deal, W. Yoshida, P. H. Liu, J. Uyeda, M. Barsky, L.
Samoska, A. Fung, T. Gaier, and R. Lai, "Demonstration of Sub-Millimeter Wave
Fundamental Oscillators Using 35-nm InP HEMT Technology," Microwave and Wireless
Components Letters, IEEE, vol. 17, pp. 223-225, 2007.
[3] O. Momeni and E. Afshari, "High Power Terahertz and Millimeter-Wave Oscillator
Design: A Systematic Approach," Solid-State Circuits, IEEE Journal of, vol. 46, pp. 583-
597.
Signal Source at 209-233GHz
Signal Generation and Transmission
• Signal source at 209-233GHz
• Transmitter at 210-227GHz
GND
Vg
Vdd
S
G
G
39
0 µ
m
440 µm
GND
Vg
Vdd
S
G
G
GND
Vg
Vdd
S
G
G
39
0 µ
m
440 µm
Signal Generation
Signal Transmission
Transmitter at 210-227GHz
Transmitter Characterization
B. Khamaisi, S. Jameson, and E. Socher, IEEE T-TST, vol. 3, 2013.
Transmitter power
on-top at 217GHz (at 4mm distance)
Measurement
-45
-40
-35
-30
-25
-20
205 210 215 220 225 230
Freqeuncy [GHz]
Dete
cte
d p
ow
er [
dB
m]
-22.5
-17.5
-12.5
-7.5
-2.5
2.5
EIR
P [
dB
m]
Transmitter Characterization
Detected power on-top at 217GHz
(at 4mm distance)
2
eff
RX πR4A
PEIRP
Frequency drop of 13% between
simulation and measurement.
Measured maximum EIRP= +1.8dBm
B. Khamaisi, S. Jameson and E. Socher, IEEE T-TST, vol. 3, 2013.
Comparison of state of the art transmitters above 200GHz
[1] [2] [1] This
work
This
work
Ref.
Push- Push
VCO
Cross coupled
push-push
VCO
Cross coupled
push-push VCO
Colpitts VCO
and 3rd Harm.
Gen
Colpitts VCO
and 3rd Harm.
Gen
Signal source
type on TX
130nm
SiGe
65nm
CMOS
65nm
CMOS
90nm
CMOS
90nm
CMOS
Tech.
170 191.2 300 217 217 Freq. [GHz]
- 11 10 10.6 13.1 Directivity
[dB]
- -1.9 -1 +1.8 +2.8 EIRP [dBm]
- - -12.7
-
-8.8 -10.3 PT_Rad [dBm]
- 3.6 - 17 17 T.R. [GHz]
- 1.1 0.64 0.531 0.531 TX chip size
(with pads)
[mm2]
- 77 75 122 134 PDC [mW]
-
- - 280 80 Si bulk
[µm]
Transmitter at 210-227GHz
References
[1] E. Laskin, P. Chevalier, A. Chantre, B. Sautreuil, and S. P. Voinigescu, “165-GHz Transceiver
in SiGe Technology,” IEEE JSSC, vol. 43, pp. 1087-1100, 2008.
[2] K. Sengupta and A. Hajimiri, “Sub-THz beam-forming using near-field coupling of Distributed
Active Radiator arrays,” in IEEE RFIC, pp. 1-4, 2011.
[3] K. Sengupta and A. Hajimiri, “Distributed active radiation for THz signal generation,” in IEEE
ISSCC, pp. 288-289, 2011.
Transmitter at 210-227GHz
Full CMOS Imaging System at 220GHz
A. Lisauskas, B. Khamaisi, S. Boppel, M. Mundt, V. Krozer, E. Socher and H. G. Roskos, IRMMW-THz, September 2012.
Imaging System at 220GHz Optical Image
220 GHz Power Transmission
Receiver
Transmitter
Receiver at 270 GHz
• 65 nm CMOS (fmax ≈ 210 GHz )
• On-Chip LO
• LO based 3rd harmonic generation
• Mixer: single transistor
• Chip size: 470 µm x 470 µm
Simulations
VgLO [V]
CG
[d
B]
S1
1 [
dB
]
Freq. [GHz]
VdLO=2.0 V
VdLO=1.8 V
VdLO=1.6 V
Thank You !