3d activities at léti. - semicon taiwan...open 3d™ is operating on leti technological platform s...

3D activities at Léti. Role of 200 and 300mm lines

André ROUZAUD, Nicolas SILLON, Mark SCANNELL,David HENRY, Thierry MOURIER

Outline Introduction Leti approach for 3D

Concept of toolbox and generic integration schemes Validations

The key role of partnerships 3D line

Role and overview Prototyping activities

Summary and Conclusions

Leti at a GlanceFigures 2010Founded 1967 as part of CEACEO Dr. Laurent MalierStaff 1700 Budget 250 M€Capex 40 M€Industrial Partners 300Joint Labs 33

Value Creation⇒1700 Patent portfolio (265 in 2010)

40% Under license

⇒37 Startups created; 5 within the last 2 years

200 and 300mm Si capabities8,000 m² clean roomsContinuous operation

Leti Technologies: a 2 -Axis Driver

Diversification

More than

Moore

More Moore

Min

iatu

riza

tio

n

65nm

45nm

32nm

22nm

16nm

Lithography

Advanced materials

FDSOI

Ultimate MOS

Highly selective

Extensive

Characterization

Advanced substrates

3D integration

Packaging

Design

Long experience in 3D blocks for different programs.

Historical backgroundA lot of applications eager for 3D

On many of them, Léti has started working longtime ago:

1999: MCM 3D - LETI

1995: Vertical 3D Stacking

1988: First Leti TSV patent(intraconnection) R.Cuchet et Al

90’s: Wafer bonding,

DRIE

Cost decrease

Si area decrease of digital chips leading to better yield

Fitting functions with the most suitable technologies

Reuse of existing Packaging, BEOL & FEOL lines

Why is 3D significant ?Three different worlds interested in:

Form factor decrease :

Miniaturization of final device (X,Y,Z)

3D key drivers

Performances improvement

Decrease R, C, signal delay allowing to: Increase device bandwidth Decrease power consumption

One Chip SetTopBox (STM)

Léti’s 3D approach

significant efforts on 3D 140 FT people for management of applicative projects,

design, process integration and specific developments.

Investment on tools: 200 and 300 mm lines

building generic technological blocks (toolbox of processes), in close collaboration with materials and equipments manufacturers.

through a limited number of different integration schemes, turning ideas into functional demonstrators and cost effective products for our partners.

Everybody interested by 3D, with different products, different drivers, different constraints (ICs fabs, MEMS fabs, OSATs, IDMs, Fabless…).

Léti specific approach to bring added value in 3D:

Thermo mechanical & thermal Modeling

Electrical ModelingMo

de

l

ing

Tech

no

log

ica

l m

od

ule

s Bonding, Thinning & Handling

Face to Face connections

Through Silicon Via (TSV)

Redistribution layers and Board connections

Components placement (WTW or CTW)

Layout & masks

De

sig

n

lay

ou

t

Standard Design rules manuel & Design kitCh 1

5x5 router

Ch1 NorthCh1 SouthCh1 EastCh1 West

Ch1 NorthCh1 South

Ch1 EastCh1 West

Ch 05x5 router

Ch0 NorthCh0 SouthCh0 EastCh0 West

Ch0 NorthCh0 South

Ch0 EastCh0 West

Ch1 3D/Res

Ch0 3D/ Res

Ch1 3D/Res

Ch0 3D/Res

3D implementation & partitionning

3D Tool Box

Ind

ust

. /

Mfg

Cost analysis

Test strategy

Reliability

Kelvin 5µm

0

20

40

60

80

100

0 0,1 0,2 0,3 0,4 0,5Resistance [ ΩΩΩΩ ]

%

09-Ref

10-Ref

11-Ref

12-Ref

13-Ref

14-Ref

15-SLE

16-SLE

17-SLE

Transfer1 2 3 4 5

A way to quote maturity for each technology develop ed in the toolbox

3D Toolbox Maturity level

Morphologic demonstration

Electrical Validation on test vehicle

Process demonstrated on IC

Frozen process on Leti platform, reliability on tech nological bricks

Product reliability data, industrial tools identifi ed with partner

Ideas & IP

With industrial partner

…within an industrial perspective

Die to Die Die to Substrate Die Placement & Die MoldingTSV

Solder balls

Copper Pillars

µinserts

µtubes

Cu-Cu

Solder balls

Copper pillar

Wire Bonding TSV First

TSV Middle& BS AR10

TSV Last AR1

High thruputP&P

High precisionP&P

Self Assembly

Wafer To Wafer

Thick Polymer molding

Thin Polymer molding

Thin Oxideplanarization

Handling

Temp. Bonding +slide off

Temp Bonding+ Zonebond

Permanentbonding

Face to Face Face to back 3 level stack1 active layer

TSV Last AR2

TSV Last AR3

TSV Last High density

WLUF

Classic Underfill

DTW Cu-Cu

Generic Toolbox Processes

Die/die Die/substrate Die placementTSV Die molding

Solder balls

Copper Pillars

µinserts

µtubes

Cu-Cu

Solder balls

Copper pillar


TSV Middle AR10

TSV Last AR1

High throuputP&P

High precisionP&P

Self Assembly

Wafer To Wafer

Thick Polymermolding

Thin Polymermolding

Thin Oxydeplanarisation

Handling

Temp. Bonding+slide off

Temp Bonding+ zonebond

Permanentbonding


TSV Last AR2

TSV Last AR3


TSV for CMOS image Sensors


Solder balls

Copper Pillars

µinserts

µtubes

Cu-Cu

Solder balls

Copper pillar


TSV Middle AR10

TSV Last AR1

High throuputP&P

High precisionP&P

Self Assembly

Wafer To Wafer


Thin Polymermolding


Handling



Permanentbonding


TSV Last AR2

TSV Last AR3


3D Partitioning Memory on LogicHigh Performance

…used in generic integration schemes

A 3D toolbox developed with key equipments manufacturers

Common labs

JOINT DEVELOPMENT

PROGRAMS2010 : Common lab LETI-SPTS

300mm TSV tool (DRIE, Diel and Metal deposit)

2010: Joint Dev. Program with SETDie to Wafer Direct bonding

TSV Toolbox: collaboration with SPTSLéti has signed in Oct 2010 a stretegic partnership withSPP/SPTS, a world leading company offering three core processes for TSV (etch, dielectric liner, and metal barrier & seed).

Collaboration on a range of 3D TSV processes to optimize etch and deposition technologies used to create next-generation high aspect ratio TSVs.

Research on alternative hardware and processes to address the need for new methods of cost-effective via fill.

Extension to very high aspect ratios (> 10:1)through a new approach to current etch and deposition techniques.

SPTS Versalys FxPOptimization of TiN and Cu MOCVD Deposition, compatible Via mid and

Via last integrations

STS Pegasus-300

Trikon Planar-300

S. Kaminaga, chairman of SPTS and president of Sumitomo

Precision Products (SPP), and L. Malier, CEO of Léti

Via mid 10*80µ

Stacking Toolbox : Coll. with SET

Wafer to wafer + Cost

+ Throughput

- Wafer yield

- Chips size must match

Chip to wafer + Flexible : size / technologies / sources

+ Yield : known good dies

- Throughput

- Alignment

2 strategies focus on speed or precision

SET FC 300

Léti-SET collaboration for C2W hybrid Cu-Cu direct bonding for 3D applications.

Stacking Toolbox : Coll with EVG

Wafer to wafer + Cost

+ Throughput

- Wafer yield

- Chips size must match

Chip to wafer + Flexible : size / technologies / sources

+ Yield : known good dies

- Throughput

- Alignment

2 strategies focus on speed or precision

Léti-EVG collaboration for W2W debonding in the frame of a JDP.

80µm thick 300mm wafer after debonding

Ongoing 300mm wafer IR debonding

Thinning/handling toolbox: Coll. with BSI

Temporary glue with slide off debonding Thermoplastic material / Waferbond

+ High thickness possible

+ Good thermal stability

+ Compatible with high topology

- High temperature compatibility

Collaboration on temporaring bonding

ZB new process

+ Compatible with HT processes

+ Debonding @ RT

+ Debonding possible directly on frame

- Special carrier treatment

RDL Toolbox : Coll. with ReplisaurusDevelopping ECPR, an innovative technology for meta llization

First prototype installed at Léti/Minatec June 2010.

Principle of ECPR

Examples of Cu patterns

3D integration technologies are now penetrating the industrial world.R&D centers now approached to back industrial devel opments.

swift product development short time-to-market prototyping Need for tools compatible with industrial facilitie s.

Context for 3D

Massive Léti’s investment in a 3D integration 300mm line aimed to cover a wide spectrum of industrial R&D developments (3D WLP, 3D IC, heterogeneous integration…)

Setting up prototyping activities allowing industry to benefit from already mature Léti’s 3D technologies:

OPEN 3D™ prototyping line

Nanotech 300

CMOS 200 mm

MEMS 200

integration

Design

Microtech for biology

Nanoscale

CharacterizationPhotonics

3D lines inside Minatec campus

3D line

On-going installation. Complete line for end of 2011

SSEC 3301 (etch)Semitool Raider(Solder, Cu ECD)

Heller 1705MKIII (reflow)

Automated P&P

DEK Europa (SMT assy)

Takatori team 300(vacuum laminator)

New 3D 300 R&D line

Microcontrol Leonardo(Dry film taper)

EVG IQ-300 (mask aliner)

SUSS ACS-300(spin coater) EVG 560 (bonder)

STS Pegasus-300 (DRIE)

SSEC 3306 (Stripping)

Trikon Planar-300 (PECVD)

SPTS Versalys FxP(iPVD & OMCVD)

AMAT Reflexion LK (CMP)

SSEC 3301 (BS Cleaning)

Disco DGP 8760(grinder)

Disco DAD6361 (edge grinder)

Semitool Raider-300(Cu ECD)

3D 300Pilot Line

3D 300 installed base

Open 3D™ prototyping facilityThe concept :

Open 3D™ is a 3D technology offer, targeting industrial customers and universities, giving access to 3D mature technologies with the following key drivers :

Cost effective technologies based on mature technology / no R&D

Customization upon request

Short cycles time

Means & Facilities :Open 3D™ is operating on LETI technological platforms : 200 & 300 mm

Support by LETI skills on layout, process, metrology, characterization, tests & reliability

Global offer possible from 3D design to component final packaging

Customers advantages : Open 3D™ commitment : low cost, reduced cycle time, yields.

Access to 3D technologies for any wafer format (200 & 300 mm)

Possibility to make proof-of-concept and/or small volume production for prototyping & pre-serial

Open 3D™ technological offer

Redistribution layer (RDL)

Technological modules

TSV Last AR 1:1 AR 2:1 AR 3:1

Stacking : D2W

Interconnections Micro-bumps Landing micro-bumps Pillars

DRM / DK / layout / masks

Under Bump Metallurgy (UBM)

TSV

Stacking

Interconnections

RDL

UBM

Open 3D™: supply chain positioning .

Tech. Specifications / planning Device WafersDevice layout / GDS files Purchase order

3D Design & Layout 3D Technology 3D Packaging

Open 3D product

Markets

Assembly

PCB AssyProducts

What a customer has to supply to Open 3D before starting a project ?

Open 3D™ TechBox content

Conclusions 3D integration is a major program worldwide and at

Léti.

Léti has developed an original approach to deal withthe complexity and the different configurations

This approach includes strategic partnerships with keytools manufacturers.

Important role of tools manufacturers in 3D: proposing both mature and flexible tools involved in the technocal roadmaps.

200mm and 300mm 3D lines at Léti are fully functional.

Prototyping activities successfully launched, allowingindustry to benefit from already mature Léti’s 3Dtechnologies.

THANK YOU FOR YOUR ATTENTION

Integration schemes : CIS

Production mode since 2009

300 mm production line @ STM Crolles

ST Micro / CEA-LETI CIS application

Cu liner

TSV AR 1 : 1


Solder balls

Copper Pillars

µinserts

µtubes

Cu-Cu

Solder balls

Copper pillar


TSV Middle AR10

TSV Last AR1

High throuputP&P

High precisionP&P

Self Assembly

Wafer To Wafer


Thin Polymermolding


Handling



Permanentbonding


TSV Last AR2

TSV Last AR3


Die to Die Copper pillar

Integration schemes : Interposers

Die to substrate copper pillars

Thinned wafer (120 µm)

Via Last TSV (Aspect Ratio 2-3) Via LastVia Mid

or

Leti’s Interposer technology

Via Last TSV (Copper liner)

AR 7 , 2 x 15µm

AR 1 80x80µm

AR 2, 60x120µm

SiO2 flanc

métal RDL

BCB

bulle air sous BCB

60

µm

The three families of Through Silicon Via are avai lable at Léti, with different targets, application fields and matu rities.

TSV Toolbox

Via First TSV (Polysilicon filled)

Via Middle TSV (Copper filled)

AR 3, 40x120µm

AR 10, 10x100µm

Trench AR 20, 5x100µmTSV first for medical application

SOI substrate, High voltage

TiN MOCVD barrierCu PVD/MOCVDBest flexibility in layout and designHigher density of I/Os

High densityMid densityMinimal impact on circuit layout

Classic Flip chip (Ball or stud bump)

Cu-Cu Direct bonding

Si

Si

Cu

SiO2

Si

Si

Cu

SiO2

Pitch reduction

> 100 µm 100-30 µm range Down to 5 µm30-10 µm range

µtubes in SAC

Solder-free µinserts

C2S pillars

C2C pillarsSLID / TLP

Face-to-Face Interconnections From solder balls to Cu-Cu bonding

A wide range of interconnections

Redistribution Layers and Board Connections

High-density, high-performance packaging

Cu RDL with organic passivation layer

Few µm’s of Cu (1 – 10 µm), Polymers for IDL

ØTSV~3µm Thin Si~15µm

Metal1

Redistribution layer (RDL)

ØTSV~3µm Thin Si~15µm

Metal1

Redistribution layer (RDL) Redistribution layer (Cu)

12 µm planarized chip

Cu RDL (Damascene) with inorganic passivation layer

3d activities at léti. - semicon taiwan...open 3d™ is operating on leti technological platform s...

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