3D activities at Léti. Role of 200 and 300mm lines
André ROUZAUD, Nicolas SILLON, Mark SCANNELL,David HENRY, Thierry MOURIER
Outline Introduction Leti approach for 3D
Concept of toolbox and generic integration schemes Validations
The key role of partnerships 3D line
Role and overview Prototyping activities
Summary and Conclusions
Leti at a GlanceFigures 2010Founded 1967 as part of CEACEO Dr. Laurent MalierStaff 1700 Budget 250 M€Capex 40 M€Industrial Partners 300Joint Labs 33
Value Creation⇒1700 Patent portfolio (265 in 2010)
40% Under license
⇒37 Startups created; 5 within the last 2 years
200 and 300mm Si capabities8,000 m² clean roomsContinuous operation
Leti Technologies: a 2 -Axis Driver
Diversification
More than
Moore
More Moore
Min
iatu
riza
tio
n
65nm
45nm
32nm
22nm
16nm
Lithography
Advanced materials
FDSOI
Ultimate MOS
Highly selective
Extensive
Characterization
Advanced substrates
3D integration
Packaging
Design
Long experience in 3D blocks for different programs.
Historical backgroundA lot of applications eager for 3D
On many of them, Léti has started working longtime ago:
1999: MCM 3D - LETI
1995: Vertical 3D Stacking
1988: First Leti TSV patent(intraconnection) R.Cuchet et Al
90’s: Wafer bonding,
DRIE
Cost decrease
Si area decrease of digital chips leading to better yield
Fitting functions with the most suitable technologies
Reuse of existing Packaging, BEOL & FEOL lines
Why is 3D significant ?Three different worlds interested in:
Form factor decrease :
Miniaturization of final device (X,Y,Z)
3D key drivers
Performances improvement
Decrease R, C, signal delay allowing to: Increase device bandwidth Decrease power consumption
One Chip SetTopBox (STM)
Outline Introduction Leti approach for 3D
Concept of toolbox and generic integration schemes Validations
The key role of partnerships 3D line
Role and overview Prototyping activities
Summary and Conclusions
Léti’s 3D approach
significant efforts on 3D 140 FT people for management of applicative projects,
design, process integration and specific developments.
Investment on tools: 200 and 300 mm lines
building generic technological blocks (toolbox of processes), in close collaboration with materials and equipments manufacturers.
through a limited number of different integration schemes, turning ideas into functional demonstrators and cost effective products for our partners.
Everybody interested by 3D, with different products, different drivers, different constraints (ICs fabs, MEMS fabs, OSATs, IDMs, Fabless…).
Léti specific approach to bring added value in 3D:
Thermo mechanical & thermal Modeling
Electrical ModelingMo
de
l
ing
Tech
no
log
ica
l m
od
ule
s Bonding, Thinning & Handling
Face to Face connections
Through Silicon Via (TSV)
Redistribution layers and Board connections
Components placement (WTW or CTW)
Layout & masks
De
sig
n
lay
ou
t
Standard Design rules manuel & Design kitCh 1
5x5 router
Ch1 NorthCh1 SouthCh1 EastCh1 West
Ch1 NorthCh1 South
Ch1 EastCh1 West
Ch 05x5 router
Ch0 NorthCh0 SouthCh0 EastCh0 West
Ch0 NorthCh0 South
Ch0 EastCh0 West
Ch1 3D/Res
Ch0 3D/ Res
Ch1 3D/Res
Ch0 3D/Res
3D implementation & partitionning
3D Tool Box
Ind
ust
. /
Mfg
Cost analysis
Test strategy
Reliability
Kelvin 5µm
0
20
40
60
80
100
0 0,1 0,2 0,3 0,4 0,5Resistance [ ΩΩΩΩ ]
%
09-Ref
10-Ref
11-Ref
12-Ref
13-Ref
14-Ref
15-SLE
16-SLE
17-SLE
Transfer1 2 3 4 5
A way to quote maturity for each technology develop ed in the toolbox
3D Toolbox Maturity level
Morphologic demonstration
Electrical Validation on test vehicle
Process demonstrated on IC
Frozen process on Leti platform, reliability on tech nological bricks
Product reliability data, industrial tools identifi ed with partner
Ideas & IP
With industrial partner
…within an industrial perspective
Die to Die Die to Substrate Die Placement & Die MoldingTSV
Solder balls
Copper Pillars
µinserts
µtubes
Cu-Cu
Solder balls
Copper pillar
Wire Bonding TSV First
TSV Middle& BS AR10
TSV Last AR1
High thruputP&P
High precisionP&P
Self Assembly
Wafer To Wafer
Thick Polymer molding
Thin Polymer molding
Thin Oxideplanarization
Handling
Temp. Bonding +slide off
Temp Bonding+ Zonebond
Permanentbonding
Face to Face Face to back 3 level stack1 active layer
TSV Last AR2
TSV Last AR3
TSV Last High density
WLUF
Classic Underfill
DTW Cu-Cu
Generic Toolbox Processes
Die/die Die/substrate Die placementTSV Die molding
Solder balls
Copper Pillars
µinserts
µtubes
Cu-Cu
Solder balls
Copper pillar
Wire Bonding TSV First
TSV Middle AR10
TSV Last AR1
High throuputP&P
High precisionP&P
Self Assembly
Wafer To Wafer
Thick Polymermolding
Thin Polymermolding
Thin Oxydeplanarisation
Handling
Temp. Bonding+slide off
Temp Bonding+ zonebond
Permanentbonding
Face to Face Face to back 3 level stack1 active layer
TSV Last AR2
TSV Last AR3
TSV Last High density
TSV for CMOS image Sensors
Die/die Die/substrate Die placementTSV Die molding
Solder balls
Copper Pillars
µinserts
µtubes
Cu-Cu
Solder balls
Copper pillar
Wire Bonding TSV First
TSV Middle AR10
TSV Last AR1
High throuputP&P
High precisionP&P
Self Assembly
Wafer To Wafer
Thick Polymermolding
Thin Polymermolding
Thin Oxydeplanarisation
Handling
Temp. Bonding+slide off
Temp Bonding+ zonebond
Permanentbonding
Face to Face Face to back 3 level stack1 active layer
TSV Last AR2
TSV Last AR3
TSV Last High density
3D Partitioning Memory on LogicHigh Performance
…used in generic integration schemes
Outline Introduction Leti approach for 3D
Concept of toolbox and generic integration schemes Validations
The key role of partnerships 3D line
Role and overview Prototyping activities
Summary and Conclusions
A 3D toolbox developed with key equipments manufacturers
Common labs
JOINT DEVELOPMENT
PROGRAMS2010 : Common lab LETI-SPTS
300mm TSV tool (DRIE, Diel and Metal deposit)
2010: Joint Dev. Program with SETDie to Wafer Direct bonding
TSV Toolbox: collaboration with SPTSLéti has signed in Oct 2010 a stretegic partnership withSPP/SPTS, a world leading company offering three core processes for TSV (etch, dielectric liner, and metal barrier & seed).
Collaboration on a range of 3D TSV processes to optimize etch and deposition technologies used to create next-generation high aspect ratio TSVs.
Research on alternative hardware and processes to address the need for new methods of cost-effective via fill.
Extension to very high aspect ratios (> 10:1)through a new approach to current etch and deposition techniques.
SPTS Versalys FxPOptimization of TiN and Cu MOCVD Deposition, compatible Via mid and
Via last integrations
STS Pegasus-300
Trikon Planar-300
S. Kaminaga, chairman of SPTS and president of Sumitomo
Precision Products (SPP), and L. Malier, CEO of Léti
Via mid 10*80µ
Stacking Toolbox : Coll. with SET
Wafer to wafer + Cost
+ Throughput
- Wafer yield
- Chips size must match
Chip to wafer + Flexible : size / technologies / sources
+ Yield : known good dies
- Throughput
- Alignment
2 strategies focus on speed or precision
SET FC 300
Léti-SET collaboration for C2W hybrid Cu-Cu direct bonding for 3D applications.
Stacking Toolbox : Coll with EVG
Wafer to wafer + Cost
+ Throughput
- Wafer yield
- Chips size must match
Chip to wafer + Flexible : size / technologies / sources
+ Yield : known good dies
- Throughput
- Alignment
2 strategies focus on speed or precision
Léti-EVG collaboration for W2W debonding in the frame of a JDP.
80µm thick 300mm wafer after debonding
Ongoing 300mm wafer IR debonding
Thinning/handling toolbox: Coll. with BSI
Temporary glue with slide off debonding Thermoplastic material / Waferbond
+ High thickness possible
+ Good thermal stability
+ Compatible with high topology
- High temperature compatibility
Collaboration on temporaring bonding
ZB new process
+ Compatible with HT processes
+ Debonding @ RT
+ Debonding possible directly on frame
- Special carrier treatment
RDL Toolbox : Coll. with ReplisaurusDevelopping ECPR, an innovative technology for meta llization
First prototype installed at Léti/Minatec June 2010.
Principle of ECPR
Examples of Cu patterns
Outline Introduction Leti approach for 3D
Concept of toolbox and generic integration schemes Validations
The key role of partnerships 3D line
Role and overview Prototyping activities
Summary and Conclusions
3D integration technologies are now penetrating the industrial world.R&D centers now approached to back industrial devel opments.
swift product development short time-to-market prototyping Need for tools compatible with industrial facilitie s.
Context for 3D
Massive Léti’s investment in a 3D integration 300mm line aimed to cover a wide spectrum of industrial R&D developments (3D WLP, 3D IC, heterogeneous integration…)
Setting up prototyping activities allowing industry to benefit from already mature Léti’s 3D technologies:
OPEN 3D™ prototyping line
Nanotech 300
CMOS 200 mm
MEMS 200
integration
Design
Microtech for biology
Nanoscale
CharacterizationPhotonics
3D lines inside Minatec campus
3D line
On-going installation. Complete line for end of 2011
SSEC 3301 (etch)Semitool Raider(Solder, Cu ECD)
Heller 1705MKIII (reflow)
Automated P&P
DEK Europa (SMT assy)
Takatori team 300(vacuum laminator)
New 3D 300 R&D line
Microcontrol Leonardo(Dry film taper)
EVG IQ-300 (mask aliner)
SUSS ACS-300(spin coater) EVG 560 (bonder)
STS Pegasus-300 (DRIE)
SSEC 3306 (Stripping)
Trikon Planar-300 (PECVD)
SPTS Versalys FxP(iPVD & OMCVD)
AMAT Reflexion LK (CMP)
SSEC 3301 (BS Cleaning)
Disco DGP 8760(grinder)
Disco DAD6361 (edge grinder)
Semitool Raider-300(Cu ECD)
3D 300Pilot Line
3D 300 installed base
Open 3D™ prototyping facilityThe concept :
Open 3D™ is a 3D technology offer, targeting industrial customers and universities, giving access to 3D mature technologies with the following key drivers :
Cost effective technologies based on mature technology / no R&D
Customization upon request
Short cycles time
Means & Facilities :Open 3D™ is operating on LETI technological platforms : 200 & 300 mm
Support by LETI skills on layout, process, metrology, characterization, tests & reliability
Global offer possible from 3D design to component final packaging
Customers advantages : Open 3D™ commitment : low cost, reduced cycle time, yields.
Access to 3D technologies for any wafer format (200 & 300 mm)
Possibility to make proof-of-concept and/or small volume production for prototyping & pre-serial
Open 3D™ technological offer
Redistribution layer (RDL)
Technological modules
TSV Last AR 1:1 AR 2:1 AR 3:1
Stacking : D2W
Interconnections Micro-bumps Landing micro-bumps Pillars
DRM / DK / layout / masks
Under Bump Metallurgy (UBM)
TSV
Stacking
Interconnections
RDL
UBM
Open 3D™: supply chain positioning .
Tech. Specifications / planning Device WafersDevice layout / GDS files Purchase order
3D Design & Layout 3D Technology 3D Packaging
Open 3D product
Markets
Assembly
PCB AssyProducts
What a customer has to supply to Open 3D before starting a project ?
Open 3D™ TechBox content
Conclusions 3D integration is a major program worldwide and at
Léti.
Léti has developed an original approach to deal withthe complexity and the different configurations
This approach includes strategic partnerships with keytools manufacturers.
Important role of tools manufacturers in 3D: proposing both mature and flexible tools involved in the technocal roadmaps.
200mm and 300mm 3D lines at Léti are fully functional.
Prototyping activities successfully launched, allowingindustry to benefit from already mature Léti’s 3Dtechnologies.
THANK YOU FOR YOUR ATTENTION
Integration schemes : CIS
Production mode since 2009
300 mm production line @ STM Crolles
ST Micro / CEA-LETI CIS application
Cu liner
TSV AR 1 : 1
Die/die Die/substrate Die placementTSV Die molding
Solder balls
Copper Pillars
µinserts
µtubes
Cu-Cu
Solder balls
Copper pillar
Wire Bonding TSV First
TSV Middle AR10
TSV Last AR1
High throuputP&P
High precisionP&P
Self Assembly
Wafer To Wafer
Thick Polymermolding
Thin Polymermolding
Thin Oxydeplanarisation
Handling
Temp. Bonding+slide off
Temp Bonding+ zonebond
Permanentbonding
Face to Face Face to back 3 level stack1 active layer
TSV Last AR2
TSV Last AR3
TSV Last High density
Die to Die Copper pillar
Integration schemes : Interposers
Die to substrate copper pillars
Thinned wafer (120 µm)
Via Last TSV (Aspect Ratio 2-3) Via LastVia Mid
or
Leti’s Interposer technology
Via Last TSV (Copper liner)
AR 7 , 2 x 15µm
AR 1 80x80µm
AR 2, 60x120µm
SiO2 flanc
métal RDL
BCB
bulle air sous BCB
60
µm
The three families of Through Silicon Via are avai lable at Léti, with different targets, application fields and matu rities.
TSV Toolbox
Via First TSV (Polysilicon filled)
Via Middle TSV (Copper filled)
AR 3, 40x120µm
AR 10, 10x100µm
Trench AR 20, 5x100µmTSV first for medical application
SOI substrate, High voltage
TiN MOCVD barrierCu PVD/MOCVDBest flexibility in layout and designHigher density of I/Os
High densityMid densityMinimal impact on circuit layout
Classic Flip chip (Ball or stud bump)
Cu-Cu Direct bonding
Si
Si
Cu
SiO2
Si
Si
Cu
SiO2
Pitch reduction
> 100 µm 100-30 µm range Down to 5 µm30-10 µm range
µtubes in SAC
Solder-free µinserts
C2S pillars
C2C pillarsSLID / TLP
Face-to-Face Interconnections From solder balls to Cu-Cu bonding
A wide range of interconnections
Redistribution Layers and Board Connections
High-density, high-performance packaging
Cu RDL with organic passivation layer
Few µm’s of Cu (1 – 10 µm), Polymers for IDL
ØTSV~3µm Thin Si~15µm
Metal1
Redistribution layer (RDL)
ØTSV~3µm Thin Si~15µm
Metal1
Redistribution layer (RDL) Redistribution layer (Cu)
12 µm planarized chip
Cu RDL (Damascene) with inorganic passivation layer