さまざまな太陽電池...

20
4 さまざまな太陽電池 (上級編) ひと口に太陽電池といっても、 使われる材料や製法などによって、性能やコストは大いに違います。 また資源の問題も重要です。 この章では、結晶系シリコンからさまざまな薄膜太陽電池、 さらにはホットな話題を集める有機太陽電池までを、わかりやすく解説します。 087

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  • 4

    0 8 7

  • 4

    1

    101

    IIIVCdTeCIGSIII

    VGaAsIIIV

    CdTeCIGS

    037

    1

    III V

    CdTe

    CIGS

    046

    0 8 8 0 8 8 0 8 90 8 9

  • 4

    1037

    1

    mm

    GaAs

    IIIV

    IIIVGaAs

    CdTeCIGSIIIV

    m

    038

    1

    23

    CIGS

    CdTe

    22.7

    17.0

    24.5 2.05

    1.82

    1.37

    0.99

    0.98

    20.4

    10.4 20.0

    36.1 41.6

    13.6 20.0

    10.9 16.7

    0.75 3.311.2

    1 2.847.9

    Si

    Cd

    201012h://www.solarbuzz.com/Moduleprices.htm& 2008Nanosolar roletorole+ 2009First Solar # Estimation: Joseph Kalowekamo, Erin Baker : Estimating the manufacturing cost of purely organic solar cells; Solar Energy 83, 1224-1231 (2009) M.A.Green et al. :Solar cell efficiency tables (version 35); Progress in Photovoltaic Research Application, vol.18 (2010) pp.144-150. 1W

    8.5

    3.5

    5066070

    (2010)***

    0 9 0 0 9 0 0 9 10 9 1

  • 4

    1

    cm1

    EeVnm

    E1239.8/

    5

    xSi

    GaAsCISCuInSe2

    GaAsCIS

    039

    1

    I0xcmIxI x I0 ex

    3104cm1x1m104 cm1/e0.373m5103cm13m74100cm1

    106

    105

    104

    103

    102

    100.8 1.1 1.4 1.7 2.0 2.3 2.6

    1200 1000 800 700 600 500nm

    (cm1)

    EeV

    CuInSe2

    CdTeInP

    Cu2S

    GaAs aSiH

    xSi

    CdS

    Zn3P2

    1.2

    1

    0.8

    0.6

    0.4

    0.2

    00 1.0 2.0 3.0

    m

    100

    1000

    10000cm1

    0 9 2 0 9 2 0 9 30 9 3

  • 4

    1950

    75

    1a

    b

    21.25eV100cm1

    100m1.13eV

    100m

    150300m

    040 75

    2

    1

    a b

    12001000 800 700 600 500

    0.810

    102

    103

    104

    1.1 1.4 1.7 2.0 2.3 2.6

    nm

    cm1

    EeV

    5066070

    1.25eV100cm1

    0 9 4 0 9 4 0 9 50 9 5

  • 4

    pn

    1pnpn

    1

    pn

    p

    n

    pn

    2n

    p

    p

    p

    p

    n

    pnp

    041 75

    1

    p

    p

    2(025 )2(024 )3(028 )

    2

    n

    pn

    pn

    npnp

    0 9 6 0 9 6 0 9 70 9 7

  • 4

    0081953

    19903

    1024.5

    23

    11990

    24.522.7

    USNWFZ1

    PERLPassivated-Emitter,,Rear-Localized

    UNSWCZ45.7cm2 21.6

    FZCZ20191

    20

    100cm2 17

    0.1m2 151m2 13

    21

    1990

    042

    1 1990

    FZ

    FZ

    CZ

    FZ

    24.5

    22.6

    21.6 45.7

    1.0

    100

    225

    778

    1017

    19.8

    17.2

    17.8

    22.7

    15.3

    4.0 UNSW*

    UNSW*

    UNSW*

    UNSW*

    Sandia

    4.0

    cm2

    University of New South Wales

    T.Saito et al.:Prog. Photovoltaics 1, pp.11-23 (1993)

    1 UNSWPERL

    n

    pp

    n

    1990PERLPassivated-Emitter,, Rear-Localized24.5%

    0 9 8 0 9 8 0 9 90 9 9

  • 4

    direct freezing1

    202010kg

    133p.432010.7

    2

    3aLSI

    b

    6078

    043

    1

    2

    3

    SS GG DD

    a b

    1 0 0 1 0 0 1 0 11 0 1

  • 4

    100300m

    0391a-SiH1.7eV2.0eV104cm1

    1

    2

    ab

    44

    a

    4

    3b

    1

    pn

    044

    1

    2

    pn

    a b

    Si

    Si

    H

    1960nppn1975(SiH4)pn(PH3)n(B2H6)ppn

    1 0 2 1 0 2 1 0 31 0 3

  • 4

    pnpin

    a-SiH

    pn

    np

    1

    pniiintrinsici

    pi011pinn

    2

    A

    Eo

    E01.1eV1.7eV1.7eV

    730nm

    m

    1/101/1002021

    045

    pinOK

    1

    p

    i

    n

    pin

    2

    cm1

    104

    103

    102

    101

    100

    E

    exp(E/Eu)

    E0

    E

    E

    AE0E01.7eVBC

    A

    B

    E C

    1 0 4 1 0 4 1 0 51 0 5

  • 4

    1p

    a-SiCHi

    a-Si:Hn

    c-Si

    CVD3

    2nm

    1.1eV

    1078

    HIT

    1015HITHeterojunction with Insulating Thin layera-Si:H

    p/ii/na-Si:H

    21.6

    AlAl

    nc Sinc Si

    ia SiHia SiH

    pa SiCHpa SiCH

    300nm

    20nm

    500nm

    10nm

    300nm

    paSiCHiaSiHn(cSi)

    046

    1

    2 c-SiH

    1977a-Si:HAM-1100mW150a-Si:H15 20

    1 0 6 1 0 6 1 0 71 0 7

  • 4

    1

    GaAsIIIV

    IIIV048049GaAs

    2GaAs

    1IIIV25

    3040

    3

    IIIVGaAs

    2

    GaAs

    0.1eV

    AEEgSi0.1eV1.2eV100cm1

    GaAsBEEgGaAs0.1eV1.53eV104cm1 2

    5

    047 IIIV

    IIIV

    1

    1 IIIV

    /

    M.A.Green et al.Solar cell efficiency tableversion 35, Prog. PhotovoltRes. Appl. 18 201014450

    2 26.1 Radboud U.2009

    Fraunhofer,2009

    RTI,1997

    Spire,1990

    Japan Energy,1996

    Spectrolab.,2003

    Kopin/Boeing,1988

    Spectrolab.,2009

    28.8

    18.4

    22.1

    30.3

    32.0

    25.8

    41.6

    2

    2

    2

    2

    2

    2

    2

    2

    3

    2

    3

    GaAs

    GaAs

    GaAs/Ge

    InP

    GaInP/GaAs

    GaInP/GaAs/Ge

    GaAs/CIS

    GaInP/GaAs/Ge

    364sun

    232sun

    2 GaAs

    nm

    EeV

    cm-1

    0.8 1.1 1.4 1.7 2.0 2.3 2.6

    106

    105

    104

    103

    102

    10

    1200 1000 800 700600 500

    GaAs

    x-Si

    Si1.11eV0.14eVE=1.25eVA100cm1GaAs1.43 eV0.08eVE=1.5eVB104cm1GaAsSi2

    1 0 8 1 0 8 1 0 91 0 9

  • 4

    IIIV

    1GaAsZBGaAs

    Si1III

    GaVAs

    GaAsIIIV IIIV

    IIIVIIIVIII

    13BAlGa

    In13

    V15NPAsSb

    Bi

    IIIV

    12a

    414

    4

    IIIVbIII3V5

    84

    1IIIV

    1.43eV

    1.13eV 1000cm2/Vs

    9750cm2/Vs

    048 IIIV

    IIIVIIIV

    1

    2

    a

    Si

    b

    Ga As

    a=5.431 a=5.653

    GaAs()aSibGa()As()

    a a

    Si Si

    a b

    Ga As

    48

    Ga3As58

    1 IIIV

    GaP ZB a=5.4512 2.27 190 150InP ZB a=5.8686 1.34 540 150AlAs ZB a=5.6605 2.15 294GaAs ZB a=5.6533 1.42 9750 450InAs ZB a=6.0584 0.36 33000 450AlSb ZB a=6.1355 1.62 200 400GaSb ZB a=6.0959 0.75 7700 1000InSb ZB a=6.4794 0.18 77000 850

    () (cm2/Vs) (cm2/Vs)(eV)

    1 1 0 1 1 0 1 1 11 1 1

  • 4

    047130IIIV23GaInP/GaAs2

    202630.3GaInP/GaAs/Ge332

    35GaInP/GaInAs/Ge3GaInP

    GaPInP2

    GaInAsGaAsInAs

    2

    IIIV0481

    1cGaInAsGa1xInxAsaGaAsb

    InAscAs

    InGaIn

    GaInAsGaAsInAs

    GaAsa5.653InP

    a5.8692a

    InAsa6.058InP

    bGaInAs

    cInP

    MBEMOVPE

    049 40IIIV

    IIIVIIIV

    1 GaAsInAsGa1xInxAs

    2

    Ga As Ga AsIn InAs

    a b c

    (a)GaAs(b)InAs(c)AsInGaIn

    a b c

    (a) GaAs(a=5.653)InPa=5.869(b) InAsa=6.058InPGaInAs(c)InP

    GaAsGaAs InAsInAs GaInAsGaInAs

    InPInP InPInP InPInP

    5.5 6.5

    MBE 1K MOVPE 1TEGAsH3

    1 1 2 1 1 2 1 1 31 1 3

  • 4

    IIIVIIVISSeTe

    IIZnCd

    122CdTe

    IIVI11

    Cd26VI

    8

    16.710

    CdTe2

    1.48eV

    CdTepCdTenCdSpn

    CdSnCdS2.4eV

    CdTeCdS

    CdTe

    3CdS/CdTe

    n-CdSCdTe

    Cd

    First Solar

    050 CdTe

    CdTe/CdSCd

    3 CdTe

    1 CdTe

    CdTenCdSpCdTe

    CdS(n)

    CdTe(p)

    2

    nm

    EeV

    cm1106

    105

    104

    103

    102

    10

    CulnSe2CdTe

    GaAs

    xSi

    CdS

    50060070080010001200

    0.8 1.1 1.4 1.7 2.0 2.3 2.6

    CdTeGaAs

    Cd2Te6

    8

    Cd Te

    1 1 4 1 1 4 1 1 51 1 5

  • 4

    CIGS

    CIGSCIGS

    CuInGaSe4CuIn1x

    GaxSe2 33

    CuInSe2CIS

    CIS

    CIS

    1

    IV14046IIIV049IIVIIVIIVI

    II12I11III13VI2

    IIIIVI2

    2CuInSe2

    GaAs2CuIn

    CuFeS2

    chalcopyrite

    1CISIIIIVI2

    IIIIVI2

    051 CIGS

    CIGSCuInGaSe4CIGS

    1

    2

    Si

    GaAs

    ZB

    CdTe

    (ZB)

    CuInSe2

    CH

    22

    CuAs SeGa In

    1 CIS

    a c

    a c

    CuInSe2 1.04 5.79 11.60 CuInS2 1.53 5.52 11.08

    CuGaSe2 1.6 5.61 11.01 CuGaS2 2.5 5.35 10.48

    CuAlSe2 2.7 5.60 10.91 CuAlS2 3.5 5.32 10.43

    AgInSe2 1.04 6.10 11.68 AgInS2 1.9 5.82 11.18

    AgGaSe2 1.9 5.82 11.18 AgGaS2 2.7 5.75 10.29

    AgAlSe2 2.55 5.96 10.74 AgAlS2 3.13 5.70 10.26

    eVeV

    1 1 6 1 1 6 1 1 71 1 7

  • 4

    CIS

    CISCuInS2050212m

    InGa

    CIGS1.25eV

    20

    16.7

    1kW5kgCIS60gOK

    1200m

    1kW5kgCIGS

    2m1kW60g

    CIGS

    CIGS1

    CIGS3

    CBDMO

    CVD

    CIGS

    052 CIGS

    CIGS

    1 CIGS1W

    10%1kW10m2200m2000cm32.345kg

    10%1kW10m2CIS2m20cm3CIS5.77CIS115gCu+In60g

    Si

    1kW

    CuIn

    3 CuInGaSe43CIGS1InGaSe 2CuSe 3 InGaSe20 CuInGaH2SeCIGS

    2 CIGS

    CIGSCIGS

    CIGS(Mo)CIGSCdSZnSZnO

    CIGSIn70810.00001%ITOCISInZnSn4Cu2ZnSnS4copper zinc tin sulfideCZTS)CIGS

    1 1 8 1 1 8 1 1 91 1 9

  • 4

    pn

    C60PCBM

    56.5

    pn

    1

    pinBP

    SIMEFp

    n

    053

    1

    2 pin

    MDMO-PPV

    PCBM

    AI

    ITO

    ITOpnPCBMPCBMITO

    (a)(b)pinnipnpSIMEFpn

    AI

    /

    ITO

    AI

    /

    ITO

    i

    p

    a

    pinb

    1 2 0 1 2 0 1 2 11 2 1

  • 4

    TiO2

    3.03.2eV

    11991

    TiO2

    Pt

    TiO2

    I

    I

    VocREDOX

    11.2

    2

    054

    1

    HOMOLUMOLUMOLUMOHOMOIHOMOIREDOXHOMO

    NIMS Now 8112008p6

    e

    e

    e

    Ru

    COOH

    COOH

    HOOC

    HOOC

    NCS

    NCSRu

    NN

    NN

    NNNN

    I

    I

    2

    CIO4CIO4

    Li+

    ba

    CIO4CIO4

    Li+

    PtPt PtPt

    1 2 2 1 2 2 1 2 31 2 3

  • 1

    3700kWh20082800kWh24

    2009

    20103300kWh

    1500kWh1030kWh

    3115

    0

    500

    1000

    1500

    2000

    2500

    3000

    3500

    1994 1996 1998 2000 2002 2004 2006 2008 2010

    kWh

    1

    4000

    1 2 4 1 2 4