Institute for Crystal Growth – Berlin member of the

The Institute for Crystal Growth in Berlin-Adlershof

� Founded in 1992, with scientific and technical staff from the Academy

of Sciences of GDR and from Humboldt University

� IKZ is a member of the Leibniz association

� Research & service function

� Present staff: 95 (45 scientists, 11 PhD students, 31 technicians, 8 others)

� Budget 2007: institutional 7.1 M Euro, external projects 2.1 M Euro

Institute for Crystal Growth – Berlin member of the

Adlershof – City of Science, Trade and Media

TV tower

Institute for Crystal Growth – Berlin member of the

PhysicsChemistryIKZ

Humboldt-Univ.

Erwin-Schrödinger-Zentrum (Library)

BESSY II

Adlershof – City of Science, Trade and Media

MathematicsInformatics

Institute for Crystal Growth – Berlin member of the

Institute for Crystal Growth

Available growth techniques:

Melt

-Czochralski pullers (high / low-pressure)

-Floating-zone furnaces (RF and laser heating)

-Vertical gradient freeze

-Micro-pulling down

Gas phase

-Physical vapour deposition (PVT)

-Chemical vapour deposition (CVD)

-MO Chemical vapour deposition (MO-CVD)

-(U)HV evaporation

Solution

-Liquid phase epitaxy

-Hydrothermal autoclaves

-Vapour-Liquid-Solid

-Top-seeded solution growth (TSSG)

Institute for Crystal Growth – Berlin member of the

� Electron Paramagnetic Resonance

� Electrical measurements (Resistivity and Hall, DLTS, Photoconductivity)

� Optical measurements (Photolumin., Reflectivity, Absorption, Raman, Scanning

photovoltage, elipsometry)

� X-Ray diffr., X-Ray topography, Powder diffr.

� SEM, Cathodolumin., EBIC, FIB, EDX

� AFM

� Chemical etching + optical microscopy

� Laser scattering tomography

� Strain determination via polaroscopy

� Mass spectroscopy (ICP-OES, RF-OES), DTA, TGA

Characterisation techniques:

Processing laboratory:

� Crystal orientation

� Blade and Wire sawing

� Lapping machines

� Polishing machines

� Surface inspections

Institute for Crystal Growth – Berlin member of the

Institute for Crystal Growth (IKZ)

Three main material categories:

Elementalsemiconductors

Compound semiconductors

Dielectric crystals

6“ GaAs

6“ FZ Si

2“ LiAlO2

1.5“ Cr:LiCaAlF6

GeSi

20 mm AlN

Institute for Crystal Growth – Berlin member of the

Institute for Crystal Growth (IKZ)

Bulk Crystals& Fibers Epitaxial layers

Nano-crystals

2“ SiC single crystal SiGe pyramids25 µm thick 4H-SiC-layer

Cr:Al2O3 Fiber

cm µm nm

Institute for Crystal Growth – Berlin member of the

Crystal growth today

Bulk crystal growth

Challenge I: Large single crystals of „new“ materials (not yet available)

Processes are well established,

good links with theory and models

Challenge II: Alternative/improved processes

IKZ: ZnO from the melt, AlN and GaN from PVT, complex oxides

IKZ: Si- FZ growth from granules, FZ of shaped crystals,use of heaters as magnets in the CZ growth

Institute for Crystal Growth – Berlin member of the

Crystal growth today

Epitaxial crystal growthProcesses are well established,good links with theory and models

Challenge: “New” materials, artificial properties through strain engineering

IKZ: Crystalline Si on amorphous substrates, 3C-SiC,Mismatch design for oxide layers, new perovskites

Institute for Crystal Growth – Berlin member of the

Crystal growth today

NanocrystalsProcesses are in development,lack of theory and models

Challenge: Optimal processes, control of size and position,understanding growth mechanisms

IKZ: Nanowiskers of Si, nanostructures of Si-Ge

Institute for Crystal Growth – Berlin member of the

IKZ-Structure