teledyne judson technologies€¦ · the feedback resistor r f should be at least 10x greater than...

TELEDYNE JUDSON TECHNOLOGIESA Teledyne Technologies Company

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Teledyne Judson Technologies LLC221 Commerce DriveMontgomeryville, PA 18936 USA

Tel: 215-368-6900Fax: 215-362-6107

Visit us on the web.www.teledynejudson.com

Indium Arsenide Detectors

ISO 9001 Certified

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J12 Indium Arsenide Detector Operating Notes (1.0 to 3.8 µm)

General

J12 Series detectors are high-qualityIndium Arsenide photodiodes for use in the1 to 3.8 µm wavelength range.

The equivalent circuit is a photon-generated current source Iph with parallelcapacitance CD, shunt resistance RD, andseries resistance RS (Fig. 12-1).

The output signal current IS is definedas:

IS = Iph RD

RD+ RS + RLOAD

RD varies as a function of detectortemperature (Fig. 12-2). RS depends on theposition of the source light spot on thedetector surface; it varies with the distancefrom the spot to the detector contact ring .

When RS is small compared to RD it maybe disregarded, but with room temperatureInAs the effects of RS are significant.

Responsivity

The effect of RS on the apparentresponse of an InAs detector is illustratedbelow.

At 22°C, RS and RD may have the sameorder of magnitude (~10� ). As a result,although incident photons generatecarriers uniformly over the detector area,some of the carriers generated near thecenter of the area may be "shunted away"through RD and fail to reach the contactring. This results in a "dip" in response atthe center of the detector's active area (Fig. 12-3).

The effect is less pronounced in small-area detectors, which have higher RD andless surface area. The effect is alsoreduced or eliminated by cooling thediode, thereby increasing the detector RD.

Temperature Effects

Cooling an InAs photodiode reducesnoise and improves detectivity (Fig. 12-4).

Cooling also increases shunt resistanceRD as described in the previous section,allowing more of the photocurrent Iph toreach the contact ring. The result is anincrease in the diode response (Fig. 12-3).

For high-power applications such aspulsed laser detection, cooling is generallynot necessary. For sensitive, low-powerapplications such as temperature meas-urements, the InAs detector should becooled or at least temperature-stabilized.

Stabilizing the temperature near 22°Croom temperature will not improve perform-ance, but will prevent changes in detectorresponse due to ambient temperature drift.

Figure 12-3Example of Response VariationAcross 2mm Active Area

Figure 12-1InAs Photodiode Equivalent Circuit

Figure 12-4Detectivity vs Wavelength for J12 Series InAs

Figure 12-5J12TE Detector Response vs Wavelength& Temperature

Figure 12-2Example of InAs Shunt Resistance vs Temperature

LOAD

ISIph

VDCD RD

RS

Iph = Current generated by incident photonsVD = Actual voltage across diode junctionCD = Detector junction capacitanceRD = Detector shunt resistanceRs = Detector series resistanceIs = Output signal current

Rbias

Vbias -0.1V

Shu

nt R

esis

tanc

e R

D (

�)

1M

100K

10K

1K

100

10

0-80 -60 -40 -20 0 +20 +40

Detector Temperature (°C)

R + R DS

250µm dia.

1mm dia.

2mm dia.

100%

0

50%

-1 -.5 0 +1Active Area Position (mm)

Rel

ativ

e R

espo

nse

+.5Active Area

-40°C

22°C

Con

tact

Con

tact0°C

Directionof SpotScanAcrossSurface

DetectorRingContact

Active Area Position

"Light Spot" From Source

0 +1 mm+.5-1 -.5

1011

109

1010

1 2 3 4Wavelength (µm)

1012

108

J12TE3 (-65°C)

J12TE2 (-40°C)

J12 (22°C)

J12TE1 (-20°C)

J12TE4 (-85°C)

D*

(�,

1KH

z, 1

Hz)

(cm

�Hz/

W)

1.50

1.25

1.00

0.75

0.50

0.25

0.00

Res

pons

ivity

(A/W

)

Wavelength (µm)

22°C-20°C-40°C-65°C-85°C

4.03.53.02.52.0

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1M

100K

10K

1K

100-80 -60 -40 -20 0 +20 +40

Detector Temperature (°C)

30

10

-10

-30

-50

-70

0 0.2 0.4 0.6 0.8

1

2

1.0

Col

d S

ide

Tem

pera

ture

TD

(°C

)

1.2

0.25mm

2.0mm

0.25mm

2.0mm

0.25mm

2.0mm

Cooler Current I (Amps)

Hot side = 27°C

T D vs I

Coo

ler V

olta

ge V

(Vol

ts)

3

Cooler V vs I1-Stage2-Stage

3-Stage

To Oscilloscope

50

VBias = 0 to -0.25V (-1V max)

Detector

IS

Operating Circuit

The recommended operating circuit formost applications is an operationalamplifier in a negative-feedback transim-pedance configuration (Fig. 13-3). Thefeedback circuit converts the detectoroutput current to a voltage, while the op-amp maintains the detector near zero-voltbias for lowest noise.

Because RD varies significantly withtemperature, selection of the proper op-amp will depend on the detector operatingtemperature as well as the desiredbandwidth. The feedback resistor RFshould be at least 10x greater than RD forbest signal-to-noise ratio. Teledyne Judson has preamplifiers for optimum per-formance with each detector type.For high frequency applications, thedetector may be reverse biased andterminated into a low impedance load (Fig.13-4). Maximum reverse bias is 1 volt.

Advantages of InAs

Unlike the photoconductors commonlyused in the 1-3.8 µm wavelength region,InAs operates in the photovoltaic modeand does not require a bias current foroperation. This makes InAs the betterchoice for DC and low-frequency applica-tions, as it does not exhibit the low-frequency or "1/f" noise characteristic ofthe photoconductors PbS, PbSe, andHgCdTe (Fig. 13-5).

InAs also offers superior pulseresponse for applications in monitoringand detecting high-speed pulsed lasers.

Figure 13-5Example of NEP vs. Frequency

Thermoelectric Cooler Operation

Figure 13-1 shows typical powerrequirements for the TE1, TE2 and TE3coolers. The built-in thermistor can beused to monitor or control the temperature.Figure 13-2 shows typical thermistorresistance vs. temperature values. Sensi-tivity, cutoff wavelength and responseuniformity are all functions of temperature.Detector temperature should be optimizedfor a particular application.

Figure 13-3Typical J12 Series Operating Circuit

Figure 13-1Detector Temperature vs Cooler CurrentTE1, TE2 and TE3

Figure 13-2Typical Thermistor Curve

Figure 13-4High-Speed Operating Circuitfor J12 or J12TE2 Series Detectors

Ther

mis

tor

Res

ista

nce

RD (

��)

IS

RF > 10x RD

Vo = IS • RF

Vos

+-

IosDetector

1 10 100 10K10-12

Frequency (Hz)

Noi

se E

quiv

alen

t Pow

er (W

/Hz1/

2 )1K

10-11

10-10

10-9

100K 1M

1/f Noise

Typical PbSe 2mm x 2mm

InAs 2mm diaJ12TE2-8A6-R02M

DetectorTemp -30°C

Detector ShuntImpedance

RecommendedCooler Module Part Number

� 400�CMAMP-TO66-PA5CMAMP-3CN-PA5

490130490132

400� - 50K�CMAMP-TO66-PA6CMAMP-3CN-PA6

490146490211

�� 25K�CMAMP-TO66-PA7CMAMP-3CN-PA7

490139490141

CMAMP assembly includes heat sink, temperature controller and transimpedance amplifier for the J12TE packages.

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1011

109

1010

1 2 3 4Wavelength (µm)

1012

108

J12TE3 (-65°C)

J12TE2 (-40°C)

J12 (22°C)

J12TE1 (-20°C)

J12TE4 (-85°C)

J12 Indium Arsenide Detectors (1.0 to 3.8 µm)

J12TE4 Series4-Stage Thermoelectrically Cooled InAs

The J12TE4 Series detectors are highquality InAs photodiodes mounted in the3CN package which includes a built-inthermistor, four stage thermoelectriccooler and hermetically sealed package.

Description

The J12 Series Indium Arsenide (InAs)detectors are photovoltaic infrared photodi-odes sensitive in the 1.0 to 3.8 µm wave-length region.

Diode sensitivity, speed of response,impedance and peak wavelength can beoptimized by operation at the propertemperature. Teledyne Judson offers a variety of convenient packages for roomtemperature and thermoelectrically cooled operation. Linear arrays, X-Y position sens-ors and special configurations are also available.

J12 SeriesRoom Temperature InAs Detectors

These photodiodes operate at ambienttemperatures and are excellent for widebandwidth (DC to 16MHz) applicationssuch as infrared laser monitors and fasttemperature sensors. The devices areavailable in 0.25 mm, 1 mm or 2 mmdiameter active sizes and are mounted inthe 18C, 5AP or convenient LD2 BNCconnector packages.

For low frequency applications (DC to50KHz) the Model PA-5 transimpedancegain preamplifier is strongly recom-mended. The PA-5 has extremely lowvoltage noise, low offset voltage andadjustable gain for the best possible matchto these low shunt resistance detectors.

InAs detectors can be reverse-biased toreduce junction capacitance and improvefrequency response.

Applications• Laser Warning Receivers• Process Control Monitors• Temperature Sensors• Pulsed Laser Monitors• Infrared Spectroscopy• Power Meters

Figure 14-1Typical Detectivity vs Wavelengthfor J12 Series InAs

D*

(�,

1KH

z, 1

Hz)

(cm

�Hz/

W)


The J12TE1 Series detectors are highquality temperature stabilized InAsdetectors mounted on a one stagethermoelectric cooler. The TE1 serieswas developed for applications such astemperature monitoring, power metersand infrared spectroscopy where low cost,responsivity, stability and low noise areimportant issues.


The J12TE2 Series detectors are highquality InAs photodiodes mounted withthermistors on two-stage thermoelectriccoolers and hermetically sealed package.The 8B6 package is standard, with the66S and HS1 packages available asoptions.

At the standard operating temperatureof -40°C, the J12TE2 Series detectorshave a much higher shunt resistance thanroom temperature detectors, resulting inhigher responsivity, lower noise andbetter stability for DC or chopped lightapplications.

See Figs. 13-1 and 13-2 for thermo-electric cooler operating information.Cooler power supplies and temperaturecontrollers are also available.


The J12TE3 Series detectors are highquality InAs photodiodes mounted in the66S package which includes a built-inthermistor, three stage thermoelectriccooler and hermetically sealed package.

J12TE3 devices are ideal for criticalmilitary, space or industrial applicationsrequiring high detectivity, good uniformityof response and wide bandwidth.

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0.50.425 dia.Pin Circle

BackgroundPins

Omitted

0.55

0.435 0.06

Dim. "A"

dia.SapphireWindow

Side View

0.690

.147 dia2 holes

Cooler (+)

Cooler (-)

Thermistor pins

Bottom View

0.96 1.24

J12TE2-66D 0.12"J12TE3-66D 0.06"

DIMENSION "A"

Detector(+)Detector(-)

432

1

87 6

5

.510SQ

.175TYP

.756 DIA. REF.

.550 DIA.0.020 Thk AR CoatedSapphire Window

.015 MAX.Top, Sealant

Outer, Top Cap

.655MAX

.62 ± .020

.39 ± .020

.095

.50 REF.

Side View

.36 Dia.Min. ClearAperture

Sealant

Top, Detector

.428 ± .020

5AP

18C 3CND66S73

12345678

ThermistorDetector (-)Detector (+)Cooler (-)Cooler (+)N/CN/CThermistor

YellowWhiteGreenBlackRedClearClearYellow

No. Designation ColorPin Sleeve

.10 todetectorplane

.10 diapin circle

Case(-)

(+)

.187

.110

.190

.50 (nom)

Case(-)

(+)

.326.240

.07 todetectorplane

.200

.50 (nom)

.20 diapin circle

Side View

Detector(+)Detector(-)

Bottom View

Cooler(+)Cooler(-)

Thermistor 0.76

0.56

0.37

0.20 0.28

0.32

6 pins on .200"bolt circle

0.5

Detector Plane

Background PinsOmitted

Sapphire Window

ActiveSize(dia.)

CutoffWave-length @�� co

Respon-sivity@�� p

Shunt Resistance

RD

@ VR = 10mV

MaximumNEP

@�� peak

and 1KHz

MinimumD*

@ � peak

and 1KHz

CapacitanceCD

@ VR = 0V

(50%) Min. Typ. (Jones)(mm) (µm) (A/W) (� ) (� ) (pW/Hz1/2) (cmHz1/2W-1) (pF)

J12 Series Room Temperature InAsJ12-18C-R250U 059E7.30.60030025.152.0200024J12-18C-R01M 420003 1.00 22°C 3.60 1.0 15 25 33 2.7E9 400 LD2J12-5AP-R02M 00619E5.2170158.000.2110024J12TE1 Series One-Stage Thermoelectrically Cooled InAsJ12TE1-37S-R250U 0501E3.18.1000300025.152.0880024J12TE1-37S-R01M 420061 1.00 -20°C 3.50 1.5 200 300 5.6 1.6E10 400J12TE1-37S-R02M 006101E3.131090552.100.2560024J12TE2 Series Two-Stage Thermoelectrically Cooled InAsJ12TE2-66D-R250U 0501E2.396.K42K2152.0380024J12TE2-66D-R01M 420041 1.00 -40°C 3.45 1.5 1.2K 2.4K 2.2 4.1E10 400J12TE2-66D-R02M 006101E1.44.400500300.2980024J12TE3 Series Three-Stage Thermoelectrically Cooled InAsJ12TE3-66D-R250U 0511E2.181.K023K06152.0180024J12TE3-66D-R01M 00411E2.117.K02K0100.1650024J12TE3-66D-R1.5M 00811E3.10.1K01K505.1360024J12TE3-66D-R02M 006111E2.14.1K5K5.200.2890024J12TE4 Series Four-Stage Thermoelectrically Cooled InAsJ12TE4-3CN-R250U 0511E1.211.K008K00452.0J12TE4-3CN-R01M 420093 1.00 -85°C 3.30 1.5 25K 50K .43 2.1E11 400J12TE4-3CN-R02M-B 006111E1.248.K31K5.600.2

OptionalPackages

andAccessories

HS1, CM21

HS Amp, HS1, CM21,

CM Amp

HS Amp, HS1, CM21,

CM Amp

HS Amp, HS1, CM21,

CM Amp -65°C 3.40 1.5

Model Number PartNumber

OperatingTempera-

ture


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221 Commerce DriveMontgomeryville, PA 18936 USATel: 215-368-6900, Fax: 215-362-6107www.teledynejudson.comMarch, 2003

In addition to our Indium Arsenide product line, Teledyne Judson Technologies offers a wide rangeof high performance standard, custom and space qualified detector products and accessories.

· Germanium detectors and arrays· Indium Gallium Arsenide detectors and arrays· Indium Antimonide detectors and arrays· Mercury Cadmium Telluride detectors and arrays· Lead Selenide detectors and arrays· Lead Sulfide detectors and arrays· Dewars, backfill and vacuum packages· Thermoelectric, Joule Thomson and closed cycle linear and rotary coolers· Preamplifiers· Temperature controllers and readout electronics

Please contact us for more information on these products at 215-368-6900 or on the web atwww.teledynejudson.com.

teledyne judson technologies€¦ · the feedback resistor r f should be at least 10x greater than...

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