tda8928j power stage 2 x 10 or 1 x 20 w class-d audio ...rtellason.com/chipdata/tda8928.pdf ·...

DATA SHEET

Preliminary specificationSupersedes data of 2004 Feb 04

2004 May 05

INTEGRATED CIRCUITS

TDA8928JPower stage 2 x 10 or 1 x 20 Wclass-D audio amplifier

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier

TDA8928J

CONTENTS

1 FEATURES

2 APPLICATIONS

3 GENERAL DESCRIPTION

4 QUICK REFERENCE DATA

5 ORDERING INFORMATION

6 BLOCK DIAGRAM

7 PINNING

8 FUNCTIONAL DESCRIPTION

8.1 Power stage8.2 Protection8.2.1 Maximum temperature8.2.2 Maximum current

9 LIMITING VALUES

10 THERMAL CHARACTERISTICS

11 QUALITY SPECIFICATION

12 DC CHARACTERISTICS

13 AC CHARACTERISTICS

14 SWITCHING CHARACTERISTICS

15 TEST AND APPLICATION INFORMATION

15.1 SE application15.2 Package ground connection15.3 Output power15.4 Reference design15.4.1 Printed-circuit board15.4.2 Bill of materials15.5 Curves measured in reference design

16 PACKAGE OUTLINE

17 SOLDERING

17.1 Introduction to soldering through-hole mountpackages

17.2 Soldering by dipping or by solder wave17.3 Manual soldering17.4 Suitability of through-hole mount IC packages

for dipping and wave soldering methods

18 DATA SHEET STATUS

19 DEFINITIONS

20 DISCLAIMERS

2004 May 05 2



TDA8928J

1 FEATURES

• High efficiency (> 90 %)

• Supply voltage from ±7.5 V to ±30 V

• Very low quiescent current

• High output power

• Diagnostic output

• Usable as a stereo Single-Ended (SE) amplifier

• Electrostatic discharge protection (pin to pin)

• No heatsink required.

2 APPLICATIONS

• Television sets

• Home-sound sets

• Multimedia systems

• All mains fed audio systems.

3 GENERAL DESCRIPTION

The TDA8928J is a switching power stage for a highefficiency class-D audio power amplifier system.

With this power stage a compact 2 × 10 W self oscillatingdigital amplifier system can be built, operating with highefficiency and very low dissipation. No heatsink isrequired. The system operates over a wide supply voltagerange from ±7.5 V up to ±30 V and consumes a very lowquiescent current.

4 QUICK REFERENCE DATA

5 ORDERING INFORMATION

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

General

VP supply voltage ±7.5 ±12.5 ±30 V

Iq(tot) total quiescent current no load connected; VP = ±12.5 V − 25 45 mA

η efficiency Po = 10 W; RL = 8 Ω; VP = ±12.5 V − 90 − %

Stereo single-ended configuration

Po output power RL = 8 Ω; THD = 10 %; VP = ±12.5 V 9 10 − W

RL = 16 Ω; THD = 10 %; VP = ±12.5 V − 5 − W

TYPENUMBER

PACKAGE

NAME DESCRIPTION VERSION

TDA8928J DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm) SOT243-3

TDA8928ST RDBS17P plastic rectangular DIL-bent-SIL power package; 17 leads (rowspacing 2.54 mm)

SOT577-2

2004 May 05 3



TDA8928J

6 BLOCK DIAGRAM

MGX377

handbook, full pagewidth

CONTROLAND

HANDSHAKE

DRIVERHIGH

TDA8928J

TEMPERATURE SENSORAND

CURRENT PROTECTION

DRIVERLOW

temp

current

4

7

VSS1

VSS1 VSS2

VDD2

6

1

2

9

8 10

VDD2 VDD1

13 5

CONTROLAND

HANDSHAKE

DRIVERHIGH

DRIVERLOW

14

11

12

17

16

3

15

EN1

DIAG

REL1

SW1

SW2

REL2

POWERUP

EN2

BOOT1

OUT1

STAB

OUT2

BOOT2

Fig.1 Block diagram.

2004 May 05 4



TDA8928J

7 PINNING

SYMBOL PIN DESCRIPTION

SW1 1 digital switch input; channel 1

REL1 2 digital control output; channel 1

DIAG 3 digital open-drain output forovertemperature and overcurrentreport

EN1 4 digital enable input; channel 1

VDD1 5 positive power supply; channel 1

BOOT1 6 bootstrap capacitor; channel 1

OUT1 7 PWM output; channel 1

VSS1 8 negative power supply; channel 1

STAB 9 decoupling internal stabilizer forlogic supply

VSS2 10 negative power supply; channel 2

OUT2 11 PWM output; channel 2

BOOT2 12 bootstrap capacitor; channel 2

VDD2 13 positive power supply; channel 2

EN2 14 digital enable input; channel 2

POWERUP 15 enable input for switching oninternal reference sources

REL2 16 digital control output; channel 2

SW2 17 digital switch input; channel 2

handbook, halfpage

TDA8928J

MGX378

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

VSS1

VSS2

VDD2

VDD1

EN1

DIAG

REL1

SW1

SW2

REL2

POWERUP

EN2

BOOT1

OUT1

STAB

OUT2

BOOT2

Fig.2 Pin configuration.

2004 May 05 5



TDA8928J

8 FUNCTIONAL DESCRIPTION

The TDA8928J is a two-channel audio power amplifiersystem using class-D technology.

The power stage TDA8928J is used for driving theloudspeaker load. It performs a level shift from thelow-power digital PWM signal, at logic levels, to ahigh-power PWM signal that switches between the mainsupply lines. A 2nd-order low-pass filter converts the PWMsignal into an analog audio signal across the loudspeaker.

8.1 Power stage

The power stage contains high-power DMOS switches,drivers, timing and handshaking between the powerswitches and some control logic (see Fig.1).

The following functions are available:

• Switch (pins SW1 and SW2): digital inputs; switchingfrom VSS to VSS + 12 V and driving the power DMOSswitches

• Release (pins REL1 and REL2): digital outputs;switching from VSS to VSS + 12 V; follow pin SW1 andSW2 with a small delay. Note: for self oscillatingapplications this pin is not used

• Power-up (pin POWERUP): must be connected to acontinuous supply voltage of at least VSS + 5 V withrespect to VSS

• Enable (pins EN1 and EN2): digital inputs; at a level ofVSS the power DMOS switches are open and the PWMoutputs are floating; at a level of VSS + 12 V the powerstage is operational

• Diagnostics (pin DIAG): digital open-drain output; pulleddown to VSS if the maximum temperature or maximumcurrent is exceeded.

8.2 Protection

Temperature and short-circuit protection sensors areincluded in the TDA8928J. The diagnostic output is pulleddown to VSS in the event that the maximum current ormaximum temperature is exceeded. The system shutsitself down when pin DIAG is connected to pins EN1 andEN2.

8.2.1 MAXIMUM TEMPERATURE

Pin DIAG becomes LOW if the junction temperature (Tj)exceeds 150 °C. Pin DIAG becomes HIGH again if Tj isdropped to approximately 130 °C, so there is a hysteresisof approximately 20 °C.

8.2.2 MAXIMUM CURRENT

When the loudspeaker terminals are short-circuited thiswill be detected by the current protection. Pin DIAGbecomes LOW if the output current exceeds the maximumoutput current of 2 A. Pin DIAG becomes HIGH again if theoutput current drops below 2 A. The output current islimited at the maximum current detection level when pinDIAG is connected to pins EN1 and EN2.

2004 May 05 6



TDA8928J

9 LIMITING VALUESIn accordance with the Absolute Maximum Rate System (IEC 60134).

Notes

1. Human Body Model (HBM); Rs = 1500 Ω; C = 100 pF.

2. Machine Model (MM); Rs = 10 Ω; C = 200 pF; L = 0.75 µH.

10 THERMAL CHARACTERISTICS

11 QUALITY SPECIFICATION

In accordance with “SNW-FQ611” if this device is used as an audio amplifier.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VP supply voltage − ±30 V

VP(sc) supply voltage forshort-circuits across the load

− ±30 V

IORM repetitive peak current inoutput pins

− 2 A

Tstg storage temperature −55 +150 °CTamb ambient temperature −40 +85 °CTvj virtual junction temperature − 150 °CVesd(HBM) electrostatic discharge voltage

(HBM)note 1

all pins with respect to VDD (class 1a) −500 +500 V

all pins with respect to VSS (class 1a) −1500 +1500 V

all pins with respect to each other(class 1a)

−1500 +1500 V

Vesd(MM) electrostatic discharge voltage(MM)

note 2

all pins with respect to VDD (class B) −250 +250 V

all pins with respect to VSS (class B) −250 +250 V

all pins with respect to each other(class B)

−250 +250 V

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air 40 K/W

Rth(j-c) thermal resistance from junction to case in free air 1.5 K/W

2004 May 05 7



TDA8928J

12 DC CHARACTERISTICSVP = ±12.5 V; Tamb = 25 °C; measured in test diagram of Fig.4; unless otherwise specified.

Note

1. Temperature sensor or maximum current sensor activated.


Supply

VP supply voltage ±7.5 ±12.5 ±30 V

Iq(tot) total quiescent current no load connected − 25 45 mA

outputs floating − 5 10 mA

Internal stabilizer logic supply (pin STAB)

VO(STAB) stabilizer output voltage referenced to VSS 11.7 13 14.3 V

Switch inputs (pins SW1 and SW2)

VIH HIGH-level input voltage referenced to VSS 10 − 15 V

VIL LOW-level input voltage referenced to VSS 0 − 2 V

Control outputs (pins REL1 and REL2)

VOH HIGH-level output voltage referenced to VSS 10 − 15 V

VOL LOW-level output voltage referenced to VSS 0 − 2 V

Diagnostic output (pin DIAG, open-drain)

VOL LOW-level output voltage IDIAG = 1 mA; note 1 0 − 1.0 V

ILO output leakage current no error condition − − 50 µA

Enable inputs (pins EN1 and EN2)

VIH HIGH-level input voltage referenced to VSS 9 − 15 V

VIL LOW-level input voltage referenced to VSS 0 5 − V

VEN(hys) hysteresis voltage − 4 − V

II(EN) input current − − 300 µA

Switching-on input (pin POWERUP)

VPOWERUP operating voltage referenced to VSS 5 − 12 V

II(POWERUP) input current VPOWERUP = 12 V − 100 170 µA

Temperature protection

Tdiag temperature activating diagnostic VDIAG = VDIAG(LOW) 150 − − °CThys hysteresis on temperature

diagnosticVDIAG = VDIAG(LOW) − 20 − °C

Current protection

IO(ocpl) overcurrent protection level − 2.1 − A

2004 May 05 8



TDA8928J

13 AC CHARACTERISTICSVP = ±12.5 V; Tamb = 25 °C; unless otherwise specified.

Notes

1. VP = ±12.5 V; RL = 8 Ω; fi = 1 kHz; fosc = 310 kHz; Rs = 0.1 Ω (series resistance of filter coil); Tamb = 25 °C;measured in reference design (SE application) shown in Fig.5; unless otherwise specified.

2. Indirectly measured; based on Rds(on) measurement.

3. Total Harmonic Distortion (THD) is measured in a bandwidth of 22 Hz to 20 kHz (AES 17 brickwall filter). Whendistortion is measured using a low-order low-pass filter a significantly higher value will be found, due to the switchingfrequency outside the audio band. Measured using the typical application circuit, given in Fig.5.

4. Efficiency for power stage.


Single-ended application; note 1

Po output power RL = 8 ΩTHD = 0.5 % 7(2) 8 − W

THD = 10 % 9(2) 10 − W

RL = 16 ΩTHD = 0.5 % − 4 − W

THD = 10 % − 5 − W

THD total harmonic distortion Po = 1 W; note 3

fi = 1 kHz − 0.05 0.1 %

fi = 10 kHz − 0.2 − %

η efficiency endstage Po = 2 × 10 W; fi = 1 kHz; note 4 − 90 − %

2004 May 05 9



TDA8928J

14 SWITCHING CHARACTERISTICSVP = ±12.5 V; Tamb = 25 °C; measured in Fig.4; unless otherwise specified.


PWM outputs (pins OUT1 and OUT2) ; see Fig.3

tr rise time − 30 − ns

tf fall time − 30 − ns

tblank blanking time − 70 − ns

tPD propagation delay from pin SW1 (SW2) topin OUT1 (OUT2)

− 200 − ns

tW(min) minimum pulse width − 220 270 ns

Rds(on) on-resistance of the outputtransistors

− 0.2 0.4 Ω


MGW145

PWMoutput

(V)

VDD

VSS

0 V

tblanktftr

1/fosc

100 ns

VSTAB

VSS

VSW(V)

tPD

VSTAB

VSS

VREL(V)

Fig.3 Timing diagram PWM output, switch and release signals.

2004 May 05 10

2004M

ay05

Philips S

emiconductors

Pow

er stage 2 xaudio am

plifier

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15T

ES

T A

ND

AP

PLIC

AT

dbook, full pagewidth

Prelim

inary specification

10 or 1 x 20 W class-D

TD

A8928J

ION

INF

OR

MAT

ION

15 nF

MGX379

15 nF

2

1

BOOT1

2VP

OUT1

OUT2

VOUT2

VOUT1

BOOT2

V

V

11

12 kΩ

100nF

CONTROLAND

HANDSHAKE

DRIVERHIGH

TDA8928J

TEMPERATURE SENSORAND

CURRENT PROTECTION

DRIVERLOW

temp

current

4

7

VSS1

VSS1VREL2 VSS

VDD2

6

1

2

9

8 10

VDD2 VDD

13 5

CONTROLAND

HANDSHAKE

DRIVERHIGH

DRIVERLOW

14

11

12

17

16

3

15

EN1

DIAG

REL1

SW1

SW2

REL2

POWERUP

EN2

STAB

12 V

V

VSW2VREL1

V

VSW1VEN VDIAG

V

VSTAB

V

12 V0

12 V0

Fig.4 Test diagram.



TDA8928J

15.1 SE application

For a SE application the application diagram as shown in Fig.5 can be used.

15.2 Package ground connection

The heatsink of the TDA8928J is connected internally to VSS.

15.3 Output power

The output power in SE self oscillating class-D applications can be estimated using the formula

The maximum current should not exceed 2 A.

Where:

RL = load impedance

Rs = series resistance of filter coil

Po(1%) = output power just at clipping.

The output power at THD = 10 %: Po(10%) = 1.25 × Po(1%).

15.4 Reference design

The reference design for a self oscillating class-D system for the TDA8928J is shown in Fig.5. The Printed-Circuit Board(PCB) layout is shown in Figs 6, 7 and 8. The bill of materials is given in Section 15.4.2.

Po(1%)

RL

RL Rds(on) Rs+ +( )------------------------------------------------ VP×2

2 RL×----------------------------------------------------------------------=

IO(max)

VP[ ]RL Rds(on) Rs+ +-------------------------------------------=

2004 May 05 12

2004M

ay05

Philips S

emiconductors

Prelim

inary specification

Pow

er stage 2 x 10 or 1 x 20 W class-D

audio amplifier

TD

A8928J

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mgx380

C241 µF

C251 µF

C34220 nF

C32470 nF

C1215 nF

LS18 Ω

LS28 Ω

R2222 Ω

C28100 nF

C2722 µF (100 V)

R195.6 Ω

C28560 pF

C29560 pF

C30560 pF

C31560 pF

VSSP

R30

39 kΩ

L3

33 µH

L4

33 µH

R31

39 kΩ

VSSP

VDDP

VDDP

VDDP

VDDP

C35220 nF

C33470 nF

C1315 nF

R2322 Ω

R215.6 Ω

VSSP

C1100 nF

+14.5 V

−14.5 V

CON1supply

123 C2

100 nF

C3470 µF(35 V)

L1

beadVDDP

C4470 µF(35 V)

8J.

13

C10220 nF

C8C9

220 nF22 µF

(100 V)

R260 Ω

220 nF

U1TDA8928J

17

6

9

12

11

5 13

8 10

2

15

3

4

14

16

17

C11220 nF

C38100 nF

S1power-ON

C37220 pF

STAB (U1,9)

STAB (U1,9)

DZ23.3 V

DZ136 V

R24

R16

1 kΩ

R100 Ω

C17

C15

100 nF

22 µF(100 V)

C1422 µF (100 V)

C16100 nF

R280 Ω

R290 Ω

R4

1 kΩ

R35

R343.9 kΩ

R210 kΩ

150 Ω

R8

3.9 kΩ

R6

220 kΩ

C22

2.2 nF

C42

2.2 nF

R32

100 Ω

C39

2.2 nF

C41

47 nF

R7

3.9 kΩ

C40

47 nFIn1

In2

C21

2.2 nF

R1315 kΩ

R91 kΩ

R333.9kΩ

R110 kΩ

R1415 kΩ

R252 kΩ

R1510 kΩ

R175.6 kΩ

R122 kΩ

R112 kΩ

Q2BC856

Q1BC848

0 Ω

C6470 µF(35 V)

VSSP

C7

470 µF(35 V)C5

VDD1 VDD2

VSS1 VSS2

VSSP

VSSP

VDDP

VDDP

VDDP

U2ALM393

12

8

43

U2BLM393

75

6

VSSP

VSSP

VSSP

J12 1

J32

1

J22 1

SW1OUT1

BOOT1

STAB

BOOT2

OUT2

REL1

POWERUP

DIAG

EN1

EN2

REL2

SW2

R5

220 kΩ

R3

1 kΩ

C20

2.2 nF

C19

2.2 nF

bead

L2VSSP

Fig.5 Single-ended self oscillating class-D system application diagram for TDA892



TDA8928J

15.4.1 PRINTED-CIRCUIT BOARD

The printed-circuit board dimensions are 8.636 × 5.842 cm; single-sided copper of 35 µm; silk screen on both sides;79 holes; 94 components (32 resistors and 41 capacitors).


MDB615Bottom silk

C37R15

C45C36R33R34

R3C19C50

C17

C40

C41R8

R16

IN2 IN1

Q1

C38R25

Q2C2

C12 C13VDD

R28

R14R13

R29

C11

C10R26

R24pin 1

R30 C28R11

R12R2R31

C25

C24C8

C9

C26C31

C26

C31

C26

C30

R9

R35R32

R1

GND22 V

OUT1

R23

C35

R22

C34

OUT2C1

C16

R4C22C21R6R10 R17 R7 R5

U2

++ − −

C37R15

R19R21R19R21

Fig.6 Printed-circuit board (bottom silk) layout for TDA8928J.


MDB617Bottom copper

Fig.7 Printed-circuit board (bottom copper) layout for TDA8928J.

2004 May 05 14



TDA8928J

mgx381Top silk

TDA8928ST

In1 In2

Con3

C32 C33

L2

L1

L4

L3

C4 C3DZ1

C14 C15

J3

C6

C7 C27

C5 U1J2

J1

Con2 Con1CO2 CO1

S1DZ2

power_on

GN

D

Out1 Out2

VD

D

VS

S

state of D art

VP typ +/- 12.5 V2 x 10 W in 8 Ω

single layer

demo PCB v2r4RL 1 2003

Fig.8 Printed-circuit board (top silk) layout for TDA8928ST.

15.4.2 BILL OF MATERIALS

COMPONENT DESCRIPTION TYPE COMMENTS

U1 TDA8928ST Philips Semiconductors,SOT577-2

U2 LM393AD National, SO8 alternatives: TIsemiconductors and Onsemiconductors

DZ1 36 V Zener diode BZX-79C36V, DO-35 used as jumper

DZ2 3.3 V Zener diode BZX-79C3V3, DO-35 used as jumper, optional

Q1 BC848 transistor NPN, SOT23

Q2 BC856 transistor PNP, SOT23

L1, L2 bead Murata BL01RN1-A62 used as jumper

L3, L4 33 µH coil Toko 11RHBP-330M ws totally shielded

S1 power-on switch PCB switch, SACME09-03290-01

optional

Con1 VSS, GND, VDD connector Augat 5KEV-03 optional

Con2, Con3 Out2, Out1 connector Augat 5KEV-02 optional

CO1, CO2 In1, In2 connector Cinch Farnell 152-396 optional

J1, J2, J3 wire Jumpers, D = 0.5 mm

Capacitors

C37 220 pF, 50 V SMD0805

C28, C29, C30,C31

560 pF, 100 V SMD0805 50 V is OK

2004 May 05 15



TDA8928J

C19, C20, C21,C22, C39, C42

2.2 nF, 50 V SMD0805

C12, C13 15 nF, 50 V SMD0805

C40, C41 47 nF, 50 V SMD1206

C1, C2, C16, C17,C26, C38

100 nF, 50 V SMD0805

C8, C9, C10, C11,C34, C35

220 nF, 50 V SMD1206 C8 to C11 used as jumper

C32, C33 470 nF, 63 V MKT

C24, C25 1 µF, 16 V SMD1206 1206 due to supply range

C7, C14, C15,C27

22 µF, 100 V Panasonic NHG SeriesECA1JHG220

63 V is OK

C3, C4, C5, C6 470 µF, 35 V Panasonic M SeriesECA1VM471

C18, C23, C36 these capacitors have beenremoved

Resistors

R10, R26, R28,R29

0 Ω SMD1206 used as jumpers

R24 0 Ω SMD0805 short-circuited in a newprinted-circuit board layout

R19, R21 5.6 Ω, 0.25 W SMD1206 1206 due to dissipation

R22, R23 22 Ω, 1 W SMD2512 2512 due to dissipation

R35 150 Ω SMD1206 used as jumper

R32 100 Ω SMD1206 used as jumper

R9 1 kΩ SMD1206 used as jumper

R3, R4, R16 1 kΩ SMD0805

R11, R12 2 kΩ SMD1206 used as jumpers

R25 2 kΩ SMD0805

R7, R8, R33, R34 3.9 kΩ SMD0805

R17 5.6 kΩ SMD0805

R1, R2, R15 10 kΩ SMD0805

R13, R14 15 kΩ SMD0805

R30, R31 39 kΩ SMD0805

R5, R6 220 kΩ SMD0805

R18, R20, R27 these resistors have beenremoved

COMPONENT DESCRIPTION TYPE COMMENTS

2004 May 05 16



TDA8928J

15.5 Curves measured in reference design

handbook, halfpage

MGX383

10−2 10−1 1 10 102

THD + N(%)

102

10

1

10−1

10−2

10−3

Po (W)

(2)

(1)

(3)

Fig.9 THD + N as function of output power.

2 × 8 Ω SE; VP = ±12.5 V.

(1) 6 kHz.

(2) 1 kHz.

(3) 100 Hz.

handbook, halfpage

MGX384

10 102 103 104 105

102

10

1

10−1

10−3

10−2

fi (Hz)

THD + N(%)

(1)

(2)

Fig.10 THD + N as function of frequency.

2 × 8 Ω SE; VP = ±12.5 V.

(1) Po = 10 W.

(2) Po = 1 W.

handbook, halfpage

0 10

100

0

20

40

60

80

2 4 6 8

η(%)

Po (W)

MGX385

Fig.11 Efficiency as function of output power.

2 × 8 Ω SE; VP = ±12.5 V; fi = 1 kHz.

handbook, halfpage

(4)

MGX386

SVRR(dB)

−60

−50

−30

−40

−20

−10

0

fi (Hz)10 102 103 104 105

(2)

(1)

(3)

Fig.12 SVRR as function of frequency.

VP = ±12.5 V; Vripple(p-p) = 2 V.

(1) Both supply lines in phase.

(2) One supply line (VSS) rippled.

(3) One supply line (VDD) rippled.

(4) Both supply lines in antiphase.

2004 May 05 17



TDA8928J

handbook, halfpage

0

100

20

40

60

80

MGX387

10−110−2Po (W)

S/N(dB)

1 10 102

Fig.13 S/N as function of output power.

2 × 8 Ω SE; VP = ±12.5 V.

handbook, halfpage

−100

0

−80

−60

−40

−20

MGX388

10210fi (Hz)

αcs(dB)

103 104 105

(1)

(2)

Fig.14 Channel separation as function offrequency.

2 × 8 Ω SE; VP = ±12.5 V.

(1) Po = 1 W.

(2) Po = 10 W.

handbook, halfpage

10

35

15

20

25

30

MDB624

10210fi (Hz)

G(dB)

103 104 105

Fig.15 Gain as function of frequency.

2 × 8 Ω SE; VP = ±12.5 V; Vi = 100 mV.

handbook, halfpage

10

(1)

20

24

4

8

12

16

20

12

Po(W)

VP (V)14 16 18

MGX389

(2)

Fig.16 Output power as function of supply voltage.

THD + N = 10 %; fi = 1 kHz.

(1) 2 × 8 Ω SE.

(2) 2 × 16 Ω SE.

2004 May 05 18



TDA8928J

16 PACKAGE OUTLINE

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

SOT243-3

0 5 10 mm

scale

D

L

E

A

c

A2

L3

Q

w Mbp

1

d

D

Z e

e

x h

1 17

j

Eh

non-concave

99-12-1703-03-12

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm) SOT243-3

view B: mounting base side

m 2e

v M

B

UNIT A e 1A2 bp c D(1) E(1) Z(1)d eDh L L 3 m

mm 17.015.5

4.64.4

0.750.60

0.480.38

24.023.6

20.019.6

10 2.54

v

0.612.211.8

1.27

e 2

5.08 2.41.6

Eh

6 2.001.45

2.11.8

3.43.1

4.38.47.0

Qj

0.25

w

0.03

x

2004 May 05 19



TDA8928J

UNIT A e1 e2A2 bp c E(1)D(1) Z(1)d e L L 1

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 13.54.64.4

0.750.60

0.480.38

24.023.6

20.019.6

10 2.5412.211.8

1.27 2.54 3.753.15

EhDh

6 2.001.45

2.11.8

3.43.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

3.753.15

SOT577-2

0 5 10 mm

scale

Qj

0.4

w

0.6

v

0.03

x

D

E

A

L1

QL

c

A2

w Mbp

1

d

Z e

2e

e

1 17

j

01-01-0503-03-12

RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads(row spacing 2.54 mm) SOT577-2

v M

Dx h

Eh

non-concave

view B: mounting base side

B

2004 May 05 20



TDA8928J

17 SOLDERING

17.1 Introduction to soldering through-hole mountpackages

This text gives a brief insight to wave, dip and manualsoldering. A more in-depth account of soldering ICs can befound in our “Data Handbook IC26; Integrated CircuitPackages” (document order number 9398 652 90011).

Wave soldering is the preferred method for mounting ofthrough-hole mount IC packages on a printed-circuitboard.

17.2 Soldering by dipping or by solder wave

Driven by legislation and environmental forces theworldwide use of lead-free solder pastes is increasing.Typical dwell time of the leads in the wave ranges from3 to 4 seconds at 250 °C or 265 °C, depending on soldermaterial applied, SnPb or Pb-free respectively.

The total contact time of successive solder waves must notexceed 5 seconds.

The device may be mounted up to the seating plane, butthe temperature of the plastic body must not exceed thespecified maximum storage temperature (Tstg(max)). If theprinted-circuit board has been pre-heated, forced coolingmay be necessary immediately after soldering to keep thetemperature within the permissible limit.

17.3 Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of thepackage, either below the seating plane or not more than2 mm above it. If the temperature of the soldering iron bitis less than 300 °C it may remain in contact for up to10 seconds. If the bit temperature is between300 and 400 °C, contact may be up to 5 seconds.

17.4 Suitability of through-hole mount IC packages for dipping and wave soldering methods

Notes

1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

2. For PMFP packages hot bar soldering or manual soldering is suitable.

PACKAGESOLDERING METHOD

DIPPING WAVE

CPGA, HCPGA − suitable

DBS, DIP, HDIP, RDBS, SDIP, SIL suitable suitable(1)

PMFP(2) − not suitable

2004 May 05 21



TDA8928J

18 DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet waspublished. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVELDATA SHEET

STATUS(1)PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective specification for productdevelopment. Philips Semiconductors reserves the right to change thespecification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in order to improve the design and supply the best possibleproduct.

III Product data Production This data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time in orderto improve the design, manufacturing and supply. Relevant changes willbe communicated via a Customer Product/Process Change Notification(CPCN).

19 DEFINITIONS

Short-form specification The data in a short-formspecification is extracted from a full data sheet with thesame type number and title. For detailed information seethe relevant data sheet or data handbook.

Limiting values definition Limiting values given are inaccordance with the Absolute Maximum Rating System(IEC 60134). Stress above one or more of the limitingvalues may cause permanent damage to the device.These are stress ratings only and operation of the deviceat these or at any other conditions above those given in theCharacteristics sections of the specification is not implied.Exposure to limiting values for extended periods mayaffect device reliability.

Application information Applications that aredescribed herein for any of these products are forillustrative purposes only. Philips Semiconductors makeno representation or warranty that such applications will besuitable for the specified use without further testing ormodification.

20 DISCLAIMERS

Life support applications These products are notdesigned for use in life support appliances, devices, orsystems where malfunction of these products canreasonably be expected to result in personal injury. PhilipsSemiconductors customers using or selling these productsfor use in such applications do so at their own risk andagree to fully indemnify Philips Semiconductors for anydamages resulting from such application.

Right to make changes Philips Semiconductorsreserves the right to make changes in the products -including circuits, standard cells, and/or software -described or contained herein in order to improve designand/or performance. When the product is in full production(status ‘Production’), relevant changes will becommunicated via a Customer Product/Process ChangeNotification (CPCN). Philips Semiconductors assumes noresponsibility or liability for the use of any of theseproducts, conveys no licence or title under any patent,copyright, or mask work right to these products, andmakes no representations or warranties that theseproducts are free from patent, copyright, or mask workright infringement, unless otherwise specified.

2004 May 05 22

© Koninklijke Philips Electronics N.V. 2004 SCA76All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changedwithout notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com . Fax: +31 40 27 24825For sales offices addresses send e-mail to: [email protected] .

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R30/02/pp23 Date of release: 2004 May 05 Document order number: 9397 750 13041

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