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HA12231FP
Audio Signal Processor for Car Deck (PB 1 Chip)
ADE-207-327A (Z)2nd Edition
Jan. 2001
Description
HA12231FP is silicon monolithic bipolar IC providing PB equalizer system and music sensor system inone chip.
Functions
• PB equalizer × 2 channel
• Music sensor × 1 channel
• Line amp. × 2 channel
• Line mute × 2 channel
Features
• No use external parts for PB equalizer. (Fixed characteristics built-in)
• Available to change music sensing level by external resistor.
• Available to change frequency response of music sensor by external capacitor.
• Different type of PB equalizer characteristics selection (120 µs/70 µs) is available.
• Line mute ON/OFF is avalable.
• This IC is strong for a cellular phone noise.
Ordering Information
Functions
Product Package PBOUT-Level PB-EQ Music Sensor Mute
HA12231FP FP-20DA 450 mVrms
HA12231FP
2
Pin Description, Equivalent Circuit (VCC = 9 V, A system of single supply voltage,Ta = 25°C, No Signal, The value in the table shows typical value.)
Pin No. Pin Name Note Equivalent Circuit Description
16 TAI(L) V = VCC/2
VCC/2
V
100 k
Tape input
5 TAI(R)
14 RIP V = VCC/2
GND
VCC
V
Ripple filter
13 MS DET V = VCC
GND
Time constant pin for rectifier
15 PBOUT(L) V = VCC/2 VCC
GND
V
PB output
6 PBOUT(R)
1 VREF V = VCC/2 VCC
GND
V
Reference output
17 EQOUT(L) V = VCC/2 Equalizer output (120 µ)
4 EQOUT(R)
Note: MS: Music Sensor
HA12231FP
3
Pin Description, Equivalent Circuit (VCC = 9 V, A system of single supply voltage,Ta = 25°C, No Signal, The value in the table shows typical value.) (cont.)
Pin No. Pin Name Note Equivalent Circuit Description
11 VCC Power supply
19 FIN(L)
V
Equalizer input
18 RIN(L)
3 RIN(R)
2 FIN(R)
9 Mute
22 k
GND100 k
Mode control input
10 FOR/REV
8 120/70
12 MS I
100 k200
MS VCC
D GND
MS output (to MPU) *
7 MS GV V = VCC/2
V90 k
MS gain pin *
20 GND GND pin
Note: MS: Music Sensor
HA12231FP
4
Block Diagram
+
−
+
20 19 18 17 16 15 14
MS
13 12 11
1
PB
OU
T(R
)
VC
C
DV
CC
MS
MS
DE
T
RIP
PB
OU
T(L
)
TA
I(L)
EQ
OU
T(L
)
RIN
(L)
FIN
(L)
GN
DV
RE
F
2 3 4 5
FIN
(R)
RIN
(R)
EQ
OU
T(R
)
TA
I(R
)
MS
GV
6 7 8 9
120/
70
Mut
e
FOR
/RE
V
10
−
+LPFRECT
I.A.
MA
S/R
+
+
I.A.
−
+
HA12231FP
5
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit Note
Supply voltage VCC Max 15 V
Power dissipation Pd 400 mW Ta ≤ 85°C
Operating temperature Topr −40 to +85 °C
Storage temperature Tstg −55 to +125 °C
HA12231FP
6
Electrical CharacteristicsIt
emS
ymb
ol
Tes
t C
on
dit
ion
Ap
plic
atio
n T
erm
inal
IC C
on
dit
ion
Inp
ut
Sp
ecif
icat
ion
Ou
tpu
t
Qui
esce
nt c
urre
nt
Inpu
t AM
P. g
ain
Cha
nnel
sep
arat
ion
PB
-EQ
gai
n
I Q
Sig
nal h
andl
ing
GVIA
Vom
ax
T.H
.D.
TH
D
GV E
Q 1
k
GV E
Q 1
0k(1
)
GV E
Q 1
0k(2
)
PB
-EQ
max
imum
out
put
VO
M
(Ta
= 2
5°C
, VC
C =
9 V
, PB
OU
T L
evel
= 4
50 m
Vrm
s (=
0 d
B))
VIH
PB
-EQ
TH
D
Noi
se v
olta
ge le
vel c
onve
rted
in in
put
TH
D-E
Q
VN
MS
sen
sing
leve
l
MS
out
put l
eak
curr
ent
MU
TE
atte
nuat
ion
Con
trol
vol
tage
VO
N
MS
out
put l
ow le
vel
VO
L
CT
RL
I OH
Mut
e
VIL
Not
e:1.
VC
C =
7.2
V
Min
22.5
12.0 50.0
37.0
33.0
29.0
300
3.5
−18.
0
70.0
−0.2
Typ
23.5
13.0
0.05
60.0
40.0
36.0
32.0
600
6.0 0.1
1.2
−14.
0
1.0
0.0
80.0
R 5 2 2/3 2 2 2/3 2/3
2/3 5 5 5
L 16 19
19/1
8
19 19
19/1
8
19/1
8
16 16 16
R 6 6→ 15 4 4 4
19/1
84
17
4 4 6 6 12 6
L 15
516
615
516
615 15
→ 6 17 17 17 17 17 15 15 12 15
11 12 12 8, 9
,10
Max
24.5 0.3 43.0
39.0
35.0 9 V
CC
0.5
2.0
−10.
0
1.5
2.0 1.0
Un
itR
e-m
ark
∗1 ∗1
mA
dBµAdB V%
mV
rms
dBdBdBdB%dBdB V
µVrm
s
fin
(Hz)
Oth
erN
o si
gnal
TH
D =
1%
Rg
= 6
80Ω
, Din
-Aud
io F
ilter
TA
I
TA
I
TA
I
FIN
FIN
/RIN
FIN
FIN
FIN
/RIN
0 0 12 0 0 0
120µ
s
120µ
s
70µs
TH
D =
1%
No
sign
al
FIN
/RIN
FIN
/RIN
0 (0)
TA
I
TA
I
TA
I
0 12
INP
UT
PB
OU
T
PB
OU
T
PB
OU
T
PB
OU
T
EQ
OU
T
EQ
OU
T
EQ
OU
T
EQ
OU
T
EQ
OU
T
EQ
OU
T
PB
OU
TM
SO
UT
PB
OU
TM
SO
UT
MS
OU
T
PB
OU
T
OU
TP
UT
1k 1k 1k 1k 1k 10k
10k
1k 1k (1k) 5k 5k 1k
PB
OU
Tle
vel(
dB
)
HA12231FP
7
Test Circuit
+
− +
2019
1817
1615
14
MS
1312
11
1
PBOUT(R)
VCC
MS
MS DET
RIP
PBOUT(L)
TAI(L)
EQOUT(L)
RIN(L)
FIN(L)
GND VREF
23
45
FIN(R)
RIN(R)
EQOUT(R)
TAI(R)
MS GV
67
89
120/70
Mute
FOR/REV 10
−+LP
F
R4
5.1k
R6
10k
R5
10k
PB
EQ
C2
22µ
C3
0.1µ
C12
0.1µ
R2
680
SW
5
FIN
SW
9
SW
7Lc
h
Rch
SW
12
R3
5.1k
R12
5.1k
R13
5.1k
R10 10
k
SW
6
SW
8P
B
EQ
RE
CT
I.A.
R7
24k
MA
+
I.A.
−+ +C
122
µ
R1
680
R15
680
R14
680
R9
330k
R8
3.9k
R11
10k
+
C4
0.47
µ+
C5
2.2µ
C10
2.2µ
+
C6
0.01
µ
RIN
RchSW
4
Lch
TA
I
FINR
INS
W3
TA
I
120
70
EX
T
PB
LM
S PB
R
SW
13
SW
10O
FF
ON
EX
T
SW
2
OF
FO
N
SW
1
SW
11F
OR
RE
V
EX
T
Not
es:
1. R
esis
tor
tole
ranc
e ±1
%2.
Cap
acito
r to
lera
nce
±1%
3. U
nit
R: Ω
, C: F
AU
DIO
SG
DC
SO
UR
CE
1
DC
SO
UR
CE
2
DC
SO
UR
CE
3
DC
VM
AC
VM
1
++
+
C9 1µ
C7
100µ
C8
0.33
µ
C11
0.47
µ
+
C13 22
µC
14 22µ
Dis
tort
ion
anal
yzer
Osc
illo
scop
e
Noi
sem
eter
NO
ISE
ME
TER
WIT
H C
CIR
/AR
M F
ILTE
RA
ND
DIN
/AU
DIO
FIL
TER
AC
VM
2
HA12231FP
8
Functional Description
Power Supply Range
HA12231FP is designed to operate on single supply only.
Table 1 Supply Voltage Range
Product Single Supply
HA12231FP 7.2 V to 12.0 V
Reference Voltage
HA12231FP provides the reference voltage of half the supply voltage that is the signal grounds. As thepeculiarity of this device, the capacitor for the ripple filter is very small about 1/100 compared with theirusual value. The block diagram is shown as figure 1.
−+
−+
1
11 VCC
RIP
C11µ
14+
20to Line Amp.
VREF
MS block
: Internal reference voltage
Figure 1 The Block Diagram of Reference Supply Voltage
HA12231FP
9
Operating Mode Control
HA12231FP provides fully electronic switching circuits. And each operating mode control are controlledby parallel data (DC voltage).
When a power supply of this IC is cut off, for a voltage, in addition to a mode control terminal even thoughas do not destruct it, in series for resistance.
Table 2 Threshold Voltage (VTH)
Pin No. Lo Hi Unit Test Condition
8, 9, 10 −0.2 to 1.0 3.5 to VCC V Input Pin Measure
V
Table 3 Switching Truth Table
Pin No. Pin Name Low High
8 120/70 120 µ (Normal) 70 µ (Metal or Chrome)
9 Mute Mute OFF Mute ON
10 FOR/REV Forward Reverse
Notes: 1. Each pins are on pulled down with 100 kΩ internal resistor.Therefore, it will be low-level when each pins are open.
2. Over shoot level and under shoot level of input signal must be the standardized.(High: VCC, Low: −0.2 V)
3. Reducing pop noise is so much better for 10 kΩ to 22 kΩ resisitor and 1 µF to 22 µF capacitorshown figure 2.
Input Pin
1 to 22 µFMPU
10 to 22 kΩ
+
Figure 2 Interface for Reduction of Pop Noise
HA12231FP
10
Input Block Diagram and Level Diagram
The each level shown above is typical valuewhen offering PBOUT level to PBOUT pin.(EQ Amp. Gv = 40 dB, f = 1 kHz)
−+
EQ Amp.
the otherchannel
C10.1µF
Input Amp.60mVrms(−22.2dBs)EQOUT
TAI30mVrms
(−28.2dBs)
FINPBIN0.6mVrms(−62.2dBs)RIN
VREF
PBOUT LevelHA12231FP: 450 mVrms (−4.7 dBs)
0dBPBOUT
MUTE
−+
R25.1kΩ 23.5dB
R15.1kΩ
Figure 3 Input Block Diagram
Adjustment of Playback Reference Operate Level
After replace R1 and R2 with a half-fix volume of 10 kΩ, adjust playback reference operate level.
HA12231FP
11
The Sensitivity Adjustment of Music Sensor
Adjusting MS Amp. gain by external resistor, the sensitivity of music sensor can set up. The music sensorblock diagram is shown in figure 4, and frequency response is shown in figure 5.
−+
TAI(L)
TAI(R)
C10.33µF
R1330kΩ
MS
MS Amp.
23.5dB
CEX2
REX2 REX1
MS DETMS Gv
66.7kΩ
90kΩ
CEX1+
LPF
RECT
VCC
S/R
DVCC
25kHz
−6dB
23.5dB
+
GND
RL
Microcomputer
16 7 13
12
20
5
33.3kΩ
−3.5dB
Figure 4 Music Sensor Block Diagram
GV2
GV1
10 100k25k10k1k
f3 f4
f2f1
f (Hz)
GV (
dB)
100
Repeat mode (REP)
Search mode (SER)
Figure 5 Frequency Response
HA12231FP
12
1. Search mode
GV1 = (23.5dB − 3.5dB) + 20log 1 + [dB]90kREX2
f1 = [Hz], f2 = 25k [Hz]12π ⋅ CEX2 ⋅ REX2
2. Repeat mode
GV2 = (23.5dB − 3.5dB) + 20log 1 + [dB]90kREX1
f3 = [Hz], f4 = 25k [Hz]12π ⋅ CEX1 ⋅ REX1
The sensitivity of music sensor (S) is computed by the formula mentioned below.
S = 12.7 − GV [dB]
S is 6 dB down in case of one-side channel.
Notes: 1. Search mode: GV1, Repeat mode: G V2
2. Standard level of TAI pin (Dolby level correspondence) = 30 mVrms
3. Standard sensing level of music sensor = 130 mVrms
Item REX1, 2 CEX1, 2 GV1, 2 f1, 3 f2, 4
S(one sidechannel)
S(bothchannel)
Search mode 24 kΩ 0.01 µF 33.5 dB 663 Hz 25 kHz −14.8 dB −20.8 dB
Repeat mode 2.4 kΩ 1 µF 51.7 dB 66.3 Hz 25 kHz −33.0 dB −39.0 dB
Note: This MS presented hysteresis lest MS(OUT) terminal should turn over again High level or Low level,in case of thresh S level constantly.
Music Sensor Time Constant
1. Sensing no signal to signal (Attack) is determined by C1, 0.01 µF to 1 µF capacitor C1 can beapplicable.
2. Sensing signal to no signal (Recovery) is determined by C1 and R1, however preceding (1), 100 kΩ to 1MΩ can be applicable.
Music Sensor Output (MS(OUT))
As for the internal circuit of music sensor block, music sensor output pin is connected to the collector ofNPN type directly, therefore, output level will be “high” when sensing no signal. And output level will be“low” when sensing signal.
IL =
* MS(OUT)LO : Sensing signal (about 1V)
DVCC − MS(OUT)LO*RL
Note: Supply voltage of MS(OUT) pin must be less than VCC voltage.
HA12231FP
13
Characteristic Curves
Transmission Frequency (MHz)
EQOUT Noise Output vs. Transmission Frequency
EQ
OU
T N
oise
Out
put
(dB
s)
0
−20
−10
−30
−40
−50
−60100 100001000
EQOUT(L), VCC = 9 V,Vin = 0 dBm, 120 µs
toward Cellular phone noise
FIN(L)RIN(L)
High Frequency Input Vin (dBm)
EQOUT Noise Output vs. Transmission Signal Input Level
EQ
OU
T N
oise
Out
put
(dB
s)
0
−20
−10
−30
−40
−60
−80
−70
−50
−50 −40 −30 −10 0 10 20−20
EQOUT(L), VCC = 9 V,120 µs, f = 900 MHz
toward Cellular phone noise
FIN(L)RIN(L)
HA12231FP
14
Frequency (Hz)
Input Amp. Gain vs. Frequency
Gai
n (
dB)
25
15
20
10
5
010 100 1k 100k 1M10k
Supply Voltage (V)
Quiescent Current vs. Supply VoltageQ
uies
cent
Cur
rent
(m
A)
7.0
6.0
6.5
5.5
5.0
4.0
4.5
4 6 10 12 14 168
No signal70 µ
VCC = 9 V,TAI → PBOUT
HA12231FP
15
Output Level Vout (dB)
Total Harmonic Distortion vs. Output Level
T.H
.D.
(%)
10
1
0.01
0.1
−15 −10 −5 5 10 15 200
Frequency (Hz)
Total Harmonic Distortion vs. FrequencyT
.H.D
. (%
)1
0.1
0.01
0.00110 100 1k 100k10k
TAI → PBOUT, 0 dB = 450 mVrms,VCC = 9 V, Mute off
−10 dB0 dB10 dB
TAI → PBOUT, 0 dB = 450 mVrms,VCC = 9 V, Mute off
100 Hz1 kHz10 kHz
(30 kHz LPF)(400 Hz HPF + 30 kHz LPF)(400 Hz HPF + 80 kHz LPF)
30 kHz LPF 400 Hz HPF+
30 kHz LPF
400 Hz HPF+
80 kHz LPF
HA12231FP
16
Supply Voltage (V)
1
0.1
0.01
0.0014 6 8 10 12 1614
Supply Voltage (V)
Signal Handling
Vom
ax (
dB)
30
25
20
10
0
5
15
4 6 10 12 14 168
TAI → PBOUT, 0 dB = 450 mVrms,Mute off, f = 1 kHz, T.H.D. = 1%
PBOUT(L)PBOUT(R)
TAI → PBOUT = 450 mVrms,Mute off
100 Hz1 kHz10 kHz
(30 kHz LPF)(400 Hz HPF + 30 kHz LPF)(400 Hz HPF + 80 kHz LPF)
Total Harmonic Distortion vs. Supply VoltageT
.H.D
. (%
)
HA12231FP
17
70
50
60
40
20
0
10
30
FIN → EQOUT, VCC = 9 V120 µ70 µ
Equalizer Amp. Gain vs. FrequencyE
Q G
ain
(dB
)
Frequency (Hz)10 100 1k 100k10k
Supply Voltage (V)
Signal to Noise Ratio vs. Supply Voltage
Sig
nal t
o N
oise
Rat
io (
dB)
70
65
60
50
40
45
55
4 6 10 12 14 168
FIN → EQOUT, Vout = 0 dB = 60 mVrms,DIN-AUDIO filter
120 µs70 µs
HA12231FP
18
10
1
0.1
0.01
FIN → EQOUT, Vout = +20 dB,0 dB = 60 mVrms
120 µs70 µs
Total Harmonic Distortion vs. FrequencyT
.H.D
. (%
)
Frequency (Hz)100 1k 100k10k
30 kHz LPF 400 Hz HPF+
30 kHz LPF
400 Hz HPF+
80 kHz LPF
100
1
10
0.1
0.01
FIN → EQOUT, 0 dB = 60 mVrms,VCC = 9 V
Total Harmonic Distortion vs. Output Level (120 µs)
T.H
.D.
(%)
Output Level Vout (dB)−5 10 3530251550 20
100 Hz1 kHz10 kHz
(30 kHz LPF)(400 Hz HPF + 30 kHz LPF)(400 Hz HPF + 80 kHz LPF)
HA12231FP
19
100
1
10
0.1
0.01
FIN → EQOUT, 0 dB = 60 mVrms,VCC = 9 V
Total Harmonic Distortion vs. Output Level (70 µs)T
.H.D
. (%
)
Output Level Vout (dB)−5 10 3530251550 20
100 Hz1 kHz10 kHz
(30 kHz LPF)(400 Hz HPF + 30 kHz LPF)(400 Hz HPF + 80 kHz LPF)
Supply Voltage (V)
10
1
0.1
0.014 6 8 10 12 1614
FIN → EQOUT, Vout = 60 mVrms,VCC = 9 V
100 Hz1 kHz10 kHz
(30 kHz LPF)(400 Hz HPF + 30 kHz LPF)(400 Hz HPF + 80 kHz LPF)
Total Harmonic Distortion vs. Supply Voltage (120 µs)
T.H
.D.
(%)
HA12231FP
20
Supply Voltage (V)
10
1
0.1
0.014 6 8 10 12 1614
FIN → EQOUT, Vout = 60 mVrms,VCC = 9 V
100 Hz1 kHz10 kHz
(30 kHz LPF)(400 Hz HPF + 30 kHz LPF)(400 Hz HPF + 80 kHz LPF)
Total Harmonic Distortion vs. Supply Voltage (70 µs)T
.H.D
. (%
)
Supply Voltage (V)
Signal Handling
Vom
ax (
dB)
45
40
35
25
15
20
30
4 6 10 12 14 168
FIN, RIN → EQOUT, 120 µs, 0 dB = 60 mVrms,f = 1 kHz, T.H.D. = 1%
FINRIN
HA12231FP
21
FIN → PBOUT, Vout = 12 dB (0 dB = 450 mVrms),80 kHz LPF
L→RR→L
Crosstalk vs. Frequency (CTRL)
Supply Voltage (V)
Signal HandlingV
omax
(dB
)45
40
35
25
15
20
30
4 6 10 12 14 168
FIN, RIN → EQOUT, 70 µs, 0 dB = 60 mVrms,f = 1 kHz, T.H.D. = 1%
FINRIN
Frequency (Hz)10 100 1k 100k10k
0
−20
−30
−10
−40
−60
−80
−70
−50Cro
ssta
lk (
dB)
HA12231FP
22
MS Amp. Sensitivity vs. Frequency
Frequency (Hz)10 100 1k 100k10k
10
0
−20
−30
−10
−40
MS
Sen
sing
Lev
el (
dB)
RIN → PBOUT, Vout = 12 dB (0 dB = 450 mVrms),80 kHz LPF
L→RR→L
Crosstalk vs. Frequency (CTRL)
Frequency (Hz)10 100 1k 100k10k
0
−20
−30
−10
−40
−60
−80
−70
−50Cro
ssta
lk (
dB)
TAI → PBOUT, VCC = 9 V,0 dB = 450 mVrms
SER L→HSER H→LREP L→HREP H→L
HA12231FP
23
Resistance R10 (Ω)
No-Signal Sensing Time vs. ResistanceN
o-S
igna
l Sen
sing
Tim
e (
ms)
1000
10
100
110M100k 1M10k
PBOUT
MSOUT
1000
10
100
0.1
1
Capacitance C8 (µF)
Signal Sensing Time vs. Capacitance
Sig
nal S
ensi
ng T
ime
(m
s)
0.001 0.01 1010.1
PBOUT
MSOUT
TAI → PBOUT, VCC = 9 V,f = 5 kHz, MSOUT L → H
SER 0 dB
TAI → PBOUT, VCC = 9 V,f = 5 kHz, MSOUT H → L
SER 0 dB
HA12231FP
24
Package Dimensions
Hitachi CodeJEDECEIAJMass (reference value)
FP-20DA—Conforms0.31 g
Unit: mm
*Dimension including the plating thicknessBase material dimension
*0.42 ± 0.08
0.12
0.15
M
20
101
*0.2
2 ±
0.05
0.80 Max
11
12.6
5.5
2.20
Max
13 Max
0° – 8°
0.70 ± 0.20
+ 0.20– 0.307.80
1.27
0.10
± 0
.10
1.15
0.40 ± 0.06
0.20
± 0
.04
HA12231FP
25
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you havereceived the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially highquality and reliability or where its failure or malfunction may directly threaten human life or cause riskof bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularlyfor maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when usedbeyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeablefailure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or otherconsequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document withoutwritten approval from Hitachi.
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