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SURFACE TREATMENT ON TUNGSTEN CARBIDE SUBSTRATE PRIOR TO HOT FILAMENT CHEMICAL VAPOUR DEPOSITION DIAMOND COATING ENGKU MOHAMMAD NAZIM B. ENGKU ABU BAKAR A thesis submitted in fulfilment of the requirements for the award of the degree of Doctor of Philosophy (Mechanical Engineering) Faculty of Mechanical Engineering Universiti Teknologi Malaysia NOVEMBER 2014 brought to you by CORE View metadata, citation and similar papers at core.ac.uk provided by Universiti Teknologi Malaysia Institutional Repository

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Page 1: SURFACE TREATMENT ON TUNGSTEN CARBIDE SUBSTRATE …

SURFACE TREATMENT ON TUNGSTEN CARBIDE SUBSTRATE PRIOR TO

HOT FILAMENT CHEMICAL VAPOUR DEPOSITION DIAMOND COATING

ENGKU MOHAMMAD NAZIM B. ENGKU ABU BAKAR

A thesis submitted in fulfilment of the

requirements for the award of the degree of

Doctor of Philosophy (Mechanical Engineering)

Faculty of Mechanical Engineering

Universiti Teknologi Malaysia

NOVEMBER 2014

brought to you by COREView metadata, citation and similar papers at core.ac.uk

provided by Universiti Teknologi Malaysia Institutional Repository

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REFERENCES

Ahmed, W., Sein, H., Ali, N., Garcio, J. and Woodwards, R. (2003). Diamond films

grown on cemented WC-Co dental burs using an improved CVD method.

Diamond and Related Materials. 12: 1300-1306

Alam, M., D. E. P. and Tallant, D.R. (1997). Diamond deposition onto WC-6% Co

cutting tool materials : coating structure and interfacial bond strength. Thin

Solid Films. 300: 164-170.

Ali, N., Cabral, G., Titus, E., Ogwu, A.A.and Gracio, J. (2004). Characterization of

diamond adhesion on micro-grain WC-Co substrate using Brinnel identations

and micro-Raman spectroscopy. Journal of Physics: Condensed Matter. 16:

6661- 6674

Almeida, F.A., Soares, E., Fernandes, A.J.S., Sacramento, J., Silva, R.F. and

Oliveira, F.J. (2011). Diamond film adhesion onto sub-micrometric WC-Co

substrates. Vacuum. 85: 1135-1139

Amirhaghi, S. H. S. R., Plappert, E., Bajic, Z., Wood, R.J.K. and Wheeler, D.W.

(1999). Growth and erosive wear performance of diamond coatings on WC

substrates. Diamond and Related Materials. 8(2-5): 845-849

Arumugam, P. U., Malshe, A. P., and Batzer, S. A. (2006). Dry machining of

aluminum–silicon alloy using polished CVD diamond-coated cutting tools

inserts. Surface and Coatings Technology. 200: 3399-3403.

Ashfold M.N.R. and May P.W. (1997).Diamond Chemical Vapour Deposition.

Chemistry & Industry. 13: 505-508

Ashfold, M.N.R., May, P.W., and Rego, C. A. (1994). Thin Film Diamond by

Chemical Vapour Deposition Methods. Chemical Society Reviews. 23: 21-30

Avigal, Y. and Hoffmann, A. (1999). A new method for nucleation enhancement of

diamond, Diamond and Related Materials. 8(2-5): 127-131

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Dedicated to my beloved wife, my children and my beloved father..

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ACKNOWLEDGEMENT

At first thanks to ALLAH, the most gracious and the most merciful, for providing me the opportunity of doctoral study and ability to accomplish this research.

I would like to express my deepest gratitude towards my Alma matter, Assoc.

Prof. Dr. Izman Bin Sudin who nurtured me to become a researcher. Without his kind guidance, encouragement and valuable advice during the research and writing, this thesis would not be come to the light. His attention and technical expertise were key elements to my doctoral study. I am gratified in gaining from his depth knowledge in the area of materials engineering particularly in diamond coating technology, which will have a significant impact on my future career.

My appreciation also to Production Lab, Materials Engineering Lab,

especially all technicians for providing me slot within their busy schedule. My gratitude goes to Universiti Teknologi Malaysia (UTM) for sponsoring my postgraduate studies.

Finally, and most importantly, special thanks to my family specially my wife,

my son and daughters for their unconditional love, sacrifice, encouragement and support that enable me to achieve this degree.

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ABSTRACT

Deposition of a large and uniform distribution of diamond grains with good adherent and high quality of diamond coating using chemical vapour deposition (CVD) technique is a challenge. Large diamond grains reduce the adhesion strength between the diamond coating and substrate material. The aim of this research is to develop a large and uniform distribution of grain size with high quality and good adhesion strength of diamond coating coated on WC–6wt% Co for grinding application. The research started with the determination of suitable etchant and etching time that can provide high surface roughness and lower Co content of WC substrate. The best concentration of SiC (174 µm) of 1, 5 and 10 g/l mixed with diamond (0.5 µm) powders with a concentration of 0.8 g/l for seeding was also determined. The diamond coating was performed for 30 hours using hot filament CVD unit. The field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and Raman spectra results indicate that all the coated samples have well faceted grains of (111) and (220) morphologies with high quality (>99% purity) of diamond coatings. The atomic force microscopy (AFM) shows the grain size formed was in the range of 1-6 µm with a density of above 108 grains/cm2. Sample treated with HNO3 + H2O2 for 60 seconds however had the highest adhesion strength measured by sand blasting. It is due to the lowest surface Co content and highest diamond grain density. The WC substrates etched with this etchant then seeded with 1 g/l of SiC mixed with 0.8 g/l of diamond powders was found to have diamond coating with sharp peaks with uniform height and gaps between diamond grains when observed using FESEM and AFM. This condition fulfilled the requirement for grinding application and at the same time having the highest quality (99.496% purity) and adhesion strength. To determine the grinding performance, WC grinding wheels were fabricated and treated with HNO3 + H2O2 for 60 seconds, seeded with 1 g/l of SiC mixed with 0.8 g/l of diamond powders and diamond coated for 30 hours. The grinding process was performed on WC-2wt% Co work piece using ultra-precision grinding machine at different feed rates of 0.015, 0.030, 0.045, 0.060 and 0.075 mm/min respectively. The diamond grain sharpness of the wheel was found unaffected after analysed using FESEM while the surface finish (Ra) of the work piece was finer from 0.020 µm to 0.007 µm. When compared with the commercial diamond bonded wheel grinding at 0.20 mm/min, the work piece surface finish is almost the same. However, the diamond bonded wheel was severely damaged with clogged grinding chips, broken-off and dislodged diamond particles. Meanwhile, at the diamond coated wheel, only clogging was observed. As a conclusion, mix seeding of diamond (5 µm, 0.8 g/l) and SiC (175 µm, 5 g/l) has produced good diamond coating properties for grinding application which is at par with the diamond bonded wheel.

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ABSTRAK

Menghasilkan salutan intan dengan saiz bijian yang besar dan seragam, daya rekatan dan kualiti yang tinggi menggunakan kaedah pengenapan wap kimia (CVD) adalah satu cabaran. Bijian intan yang besar mengurangkan daya rekatan antara salutan intan dan bahan substrat. Kajian ini bertujuan untuk menghasilkan bijian salutan intan yang besar dan seragam, daya rekatan dan kualiti yang tinggi ke atas WC-6% berat Co untuk kegunaan proses canaian. Kajian bermula dengan menentukan larutan dan masa punaran yang sesuai untuk menghasilkan kekasaran permukaan yang tinggi dan kandungan Co yang rendah pada substrat WC. Konsentrasi campuran serbuk SiC (174 µm) terbaik di antara 1, 5 dan 10 g/l di campur dengan serbuk intan (0.5 µm) dengan konsentrasi 0.8 g/l bagi tujuan pembenihan juga ditentukan. Salutan intan dilakukan selama 30 jam menggunakan unit filamen panas CVD. Analis dari mikroskop imbasan elektron pancaran medan (FESEM), pembelauan sinar-X (XRD) dan Raman spektrum menunjukkan semua salutan intan mempunyai segi bijian yang jelas dengan morfologi (111) dan (220) dan berkualiti tinggi (>99% ketulenan). Analisis mikroskopi daya atom (AFM) menunjukkan saiz bijian adalah dalam julat 1-6 µm dengan ketumpatan melebihi 108 bijian/sm2. Sampel yang dipunar dengan HNO3+H2O2 selama 60 saat, didapati mempunyai daya rekatan tertinggi bila diuji secara pembagasan pasir. Ini disebabkan oleh kandungan Co terendah serta ketumpatan bijian intan tertinggi pada permukaan substrat WC. Substrat WC yang dipunar dengan larutan ini yang kemudiannya di lakukan pembenihan dengan campuran serbuk 1 g/l SiC dan 0.8 g/l intan didapati mempunyai salutan intan dengan puncak yang tajam, ketinggian dan jarak antara bijian yang seragam apabila di analisis menggunakan FESEM dan AFM. Keadaan ini memenuhi keperluan aplikasi proses canaian dan pada masa yang sama mempunyai kualiti (99.496% ketulenan) dan kekuatan rekatan tertinggi. Bagi menguji prestasi canaian, roda pencanai WC dihasilkan, dirawat dengan HNO3+ H2O2 selama 60 saat dan dibenihkan dengan campuran serbuk 1 g/l SiC dan 0.8 g/l intan serta disalut intan selama 30 jam. Proses canaian telah dilakukan ke atas benda kerja WC-2% berat Co menggunakan mesin canai ketepatan ultra dengan kadar suapan berbeza iaitu 0.015, 0.030, 0.045, 0.060 dan 0.075mm/min. Ketajaman bijian intan didapati tidak terjejas apabila di analisis menggunakan FESEM dan kemasan permukaan (Ra) benda kerja adalah lebih halus dari asalnya 0.020 µm kepada 0.007 µm. Perbandingan canaian pada 0.20mm/min menggunakan roda intan terikat komersial menunjukkan kemasan permukaan benda kerja adalah hampir sama. Walau bagaimanapun roda komersial didapati rosak teruk dengan tatal canaian yang tersekat serta partikel intan yang pecah dan tertanggal. Sementara pada roda salutan intan, hanya tatal canaian tersekat berlaku. Sebagai kesimpulan, campuran bahan pembenihan serbuk intan (5 µm, 0.8 g/l) dan SiC (175 µm, 5 g/l) telah menghasilkan salutan intan dengan sifat yang sesuai untuk kegunaan canaian serta ia setara dengan roda canaian terikat intan.

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TABLE OF CONTENTS

CHAPTER TITLE PAGE

DECLARATION ii

DEDICATION iii

ACKNOWLEDGEMENT iv

ABSTRACT v

ABSTRAK vi

TABLE OF CONTENTS vii

LIST OF TABLES xi

LIST OF FIGURES xiv

LIST OF SYMBOLS xxi

LIST OF ABBREVIATIONS xxiii

LIST OF APPENDICES xxiv

1 INTRODUCTION 1

1.1 Background of the Research 1

1.2 Problem Statement 3

1.3 Objectives of the Research 4

1.4 Scopes of the Research 5

1.5 Significance of the Research 6

2 LITERATURE REVIEW 7

2.1 Introduction 7

2.2 Diamond 7

2.2.1 Comparison of CVD Diamond and Single

Crystal

9

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2.2.2 The Application of CVD diamond 10

2.3 Cutting Tool Materials 12

2.3.1 Tungsten Carbide (WC) 12

2.3.1.1 Cobalt content in cemented Tungsten

Carbide

13

2.3.1.2 Tungsten Carbide (WC) as a

Substrate for Diamond Coating

15

2.4 Grinding 16

2.4.1 Requirements for a Grinding Wheel 17

2.5 Chemical Vapour Depostion (CVD)

18

2.5.1 Hot Filament Chemical Vapour Deposition (HFCVD)

19

2.5.2 HFCVD Diamond Nucleation and Growth 20

2.5.3 Diamond Nucleation on Metal Carbide 27

2.6 Polycrystalline Diamond Depositions on WC 28

2.6.1 Effect of Co on the Quality of Diamond Film 28

2.6.2 Importance of Diamond Nucleation Density 29

2.7 Effect of WC Substrate Surface Roughness on

Diamond Film

30

2.7.1 WC-6 wt% Co Substrate Surface Preparation 31

2.7.1.1 Second Step Pretreatment with

H2SO4 + H2O2

33

2.7.1.2 Second Step Pretreatment with

HNO3 + H2O2

34

2.7.1.3 Second Step Pretreatment with

HNO3 + HCl + H2O

35

2.8 Seeding 35

2.8.1 Seeding with Diamond Powder 35

2.8.2 Mix Seeding 37

2.9 Effect of HFCVD Parameters on Diamond Coating 39

2.9.1 Methane (CH4) concentration 39

2.9.2 Chamber Pressure 43

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2.9.3 Filament Temperature 47

2.9.4 Substrate Temperature 48

2.10 Summary of Literature Review 50

3 RESEARCH METHODOLOGY 52

3.1 Introduction

52

3.2 Research Approach

52

3.3 Materials

54

3.4 First Stage: Determination of the Most Suitable

Etchant

56

3.4.1 Two-Step Chemical Pretreatment 56

3.4.2 Seeding Process 57

3.4.3 Diamond Deposition Process 58

3.4.4 Characterisation of the Diamond Coating 58

3.5 Second Stage: Determination of the Composition of

Seeding Powders

62

3.5.1 Two-Step Chemical Pretreatment 62

3.5.2 Seeding Process 62

3.5.3 Diamond Deposition Process 63

3.5.4 Characterisation of the Diamond Coating 63

3.6 Third Stage: Determination of Grinding Performance

of the Diamond Coated WC Tool

64

3.6.1 In-House Fabricated Grinding Wheel 64

3.6.2 Pretreatment of Fabricated Grinding Wheel 64

3.6.3 Seeding Treatment of the Fabricated Grinding

Wheel

65

3.6.4 Diamond Deposition Process 65

3.6.5 Micro Grinding Process 66

3.6.6 Work Piece Material

67

3.6.7 Materials Characterisation of the Diamond

Coated Wheels

68

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4 RESULTS AND DISCUSSIONS 69

4.1 Introduction 69

4.2 Effect of First Step Pretreatment on the Tungsten

Carbide Substrate Surface Roughness and Cobalt

Content

70

4.3 Effect of Second Step Pretreatment and Mixed

Seeding

72

4.3.1 Second Step Pretreatment Using H2SO4 (96%)

+ H2O2 (30%) (1:2 ratio)

73

4.3.2 Second Step Pretreatment Using HNO3(65%)

+ HCl(37%) + H2O (1:1:1 ratio)

86

4.3.3 Second Step Pretreatment Using HNO3 (65%)+

H2O2 (30%) (1:9 ratio)

100

4.3.4 Summary 113

4.4 Second Stage of Experiment

117

4.5 Third Stage of Experiment

131

4.5.1 First Part of Grinding 132

4.5.2 Second Part of Grinding 138

5 CONCLUSIONS AND RECOMMENDATIONS FOR

FUTURE WORK

1143

5.1 Conclusions 143

5.2 Recommendations 145

REFERENCES 146

Appendices A-G 155-185

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LIST OF TABLES

TABLE NO. TITLE PAGE

2.1 Properties of CVD diamond and single crystal diamond 10

2.2 Actual and potential application of CVD diamond 11

2.3 Properties of cutting tool materials 13

3.1 Surface roughness and Co content for as-received WC

substrates

55

3.2 Summary of second-step step pretreatment process 57

3.3 Diamond deposition parameters for HFCVD machine 58

3.4 Parameters for blasting test 60

3.5 Parameter of Raman spectra analysis 60

3.6 The concentration of diamond and silicon carbide powders for the seeding process

63

3.7 Micro-grinding parameters

67

4.1 Summary of diamond grain size and density of samples treated for 5, 10 and 15 seconds in H2SO4(96%) + H2O2(30%) solution

79

4.2 Summary of the diamond film surface roughness coated onWC substrate treated with H2SO4(96%) + H2O2(30%) for 5, 10 and 15 seconds

82

4.3 Raman spectra data and analysis 84

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4.4 The results of the blasting test conducted on the diamond coated WC samples treated with H2SO4(96%) + H2O2(30%) for 5 ,10 and 15 seconds

86

4.5 Results of diamond grain size and density based on AFM of samples treated for 3, 6 and 9 minutes

93

4.6 Atomic force microscope (AFM) surface roughness results of diamond coated on WC substrate treated with HNO3(65%) + HCl(37%) + H2O solution for 3, 6 and 9 minutes

95

4.7 Raman spectra data and analysis of diamond films coated on WC samples treated with HNO3(65%) + HCl(37%) + H2O for 3, 6 and 9 minutes

97

4.8 Results of the blasting test conducted on the dimoand coated WC samples treated with HNO3(65%) + HCl(37%) + H2O solution for 3, 6 and 9 minutes

99

4.9 Results of diamond grain size and density of samples chemically treated for 30, 60 and 90 seconds

106

4.10 Atomic force microscope (AFM) results of the diamond film surface roughness coated onWC substrate treated in HNO3(65%) + H2O2(30%) solution for 30, 60 and 90 seconds

109

4.11 Raman spectra data and analysis for diamond coatings on WC samples treated with HNO3(65%) + H2O2(30%) solution for 30, 60 and 90 seconds

111

4.12 The blasting test results conducted on the diamond coated WC samples treated with HNO3(65%) + H2O2(30%) solution for 30, 60 and 90 seconds

113

4.13 Summary of diamond coatings best properties coated on WC substrate treated with H2SO4 + H2O2 (15 seconds), HNO3 + HCl + H2O (6 minutes) and HNO3 + H2O2 (60 seconds)

114

4.14 Atomic force microscope AFM images analysis of the diamond coatings seeded with 0 g/l, 1 g/l, 5 g/l and 10 g/l of SiC powder

124

4.15 Surface roughness results of diamond coating seeded with 0 g/l, 1 g/l, 5 g/l and 10 g/l SiC powder

125

4.16 Raman spectrums analysis on diamond coating seeded with diamond and 0 g/l, 1 g/l, 5 g/l and 10 g/l of SiC powder

128

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4.17 Results of the blasting test conducted on the diamond coated WC samples seeded with diamond and SiC powder with the concentrations of 0 g/l, 1 g/l, 5 g/l and 10 g/l

131

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LIST OF FIGURES

FIGURE NO. TITLE PAGE

2.1 Transformation of hexagonal arrangement of atom in graphite to a cubic arrangement in diamond

9

2.2

diagram of carbon showing the shaded region of synthetic diamond production

9

2.3 Mechanical properties variation of tungsten carbide with normal particle size in relation to the amount of cobalt

15

2.4 Examples of two of the most common types of low-pressure CVD reactor. (a) Hot filament reactor, (b) Microwave plasma reactor

19

2.5 Schematic diagram of the chemical and physical processes occurring during diamond CVD

21

2.6 A simplified form of the Bachmann triangle C–H– O composition diagram

22

2.7 A schematic diagram of diamond growth mechanism 24

2.8 Growth process of a diamond film on a non-diamond substrate; (a) nucleation of individual crystallites (0.5 h), (b-c) termination of nucleation, and growth of individual crystallites (1h - 4h), (d) faceting and coalescence of individual crystallites, and formation of continuous film (10 h), (e-f) some crystals grow faster and swallow their neighbours during growth of continuous film (2 h- 215 h)

25

2.9 Columnar structured layer developed during continuous growth of CVD diamond. (a) Columnar morphology with increasing size of grains, (b) The crystals with the direction of fastest growth nearly perpendicular to the substrate are in favour position and will survive

26

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2.10 Crystal structure produced in CVD diamond growth based on α values

27

2.11 Influence of surface nucleation density on crystal morphology. (a) Scratched with diamond paste with a nucleation density of about 108 cm-2, (b) Unscratched having a nucleation density of about 104 – 105 cm-2

30

2.12 Diamond nucleation on (a) Polished Si substrate and (b) Scratched surface of WC-6 wt% Co

31

2.13 SEM images of WC-6 wt% Co substrate, (a) after grinding and (b) after etching with Murakami solution for 10 minutes

33

2.14 SEM micrographs of (i) Isotropic surface roughness of (a) 3% Co, (b) 6% Co and (c) 12% Co cemented WC, (ii) Octahedral morphology (111) of diamond on (a) 3% Co, (b) 6% Co and (c) 12% Co cemented WC

36

2.15

Relationship between diamond nucleation densities and the size of diamond particles used for seeding

37

2.16 Comparison off all properties of diamond coatings deposited at various CH4 concentrations

40

2.17 SEM images of the surface morphologies of diamond coatings deposited at (a) 1, (b) 3 and (c) 5 vol% CH4

40

2.18 Plots showing (a) average growth rate of diamond film as a function of CH4 concentration at different deposition time, (b) average grain size as a function of film thickness, (c) variation of film thickness with deposition time for four different CH4 concentrations

42

2.19 SEM micrograph of diamond nuclei for 20 min with 1 torr of pressure and ultra pure

43

2.20 Diamond coating at 20 torr, (a) Prominent diamond peak at 1332 cm-1, (b) SEM micrograph of coating for 3 hours

44

2.21 Dependence of growth rate on the temperature of the substrate surface for 3 and 20 mbar.

45

2.22 SEM micrographs of diamond coatings, deposited at (a) 3 mbar, (b) 20 mbar and (c) 50 mbar, (d) SEM micrograph of an outgrowth in the diamond coating at 50 mbar

46

2.23 Raman Spectra of CVD diamond, deposited at (a) 3 mbar and (b) 20 mbar

46

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2.24 Effect filament temperature on (i) Morphology of

diamond films deposited at (a) 1700, (b) 1500 and (c) 1300OC, (ii) X-ray diffraction spectra of the deposited films shown in (i)

48

2.25

Nucleation density versus filament temperature 49

2.26

Temperature dependence on nucleation density 49

3.1

Flow chart of the overall research activities 53

3.2

WC-6 wt% Co substrate sample, (a) Actual photo, (b) Dimension of the sample

54

3.3

Surface morphology of WC substrate surface after cutting 55

3.4 Example of EDX spectrum and analysis of a cut sample 56

3.5 Atomic force microscope (AFM) unit (Park System XE100, Korea)

59

3.6 The blasting test (a) Sand blasting unit and (b) Blasting schematic diagram

60

3.7 Horiba JOBIN YVON HR 800 Raman Spectrometer 61

3.8 Tungsten Carbide grinding wheels (a) Schematic diagram of the fabricated wheel, (b) Fabricated WC wheel, and (c) Commercial diamond bonded wheel

65

3.9 Ultra-precision turning and grinding machine (Nanotech 220UPL)

66

3.10 Vertical grinding configuration 67

3.11 WC work pieces clamped into the aluminium holders

68

3.12 Surface profiler (Surfcom 5000)

68

4.1 Tungsten carbide (WC) substrate surface after Murakami’s treatment (a) FESEM image and (b) Overall EDX elemental analysis

71

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4.2 Comparison of WC substrate before and after Murakami’s treatment, (a) Subsrate surface roughness, and (b) Substrate surface Co content

71

4.3 FESEM images and EDX analysis of samples treated with H2SO4(96%) + H2O2(30%) for (a) 5 sec, (b) 10 sec and (c) 15 sec

73

4.4 WC substrate surface roughness etched for 5, 10 and 15 seconds using H2SO4(96%) + H2O2(30%)

75

4.5 FESEM images and XRD spectrums of diamond film coated WC samples treated with H2SO4(96%) + H2O2(30%) for (a) 5 sec, (b) 10 sec and (c) 15 sec

76

4.6 XRD spectrums of diamond coating on WC samples treated with H2SO4(96%) + H2O2(30%) solution for (a) 5 sec (b) 10 sec and (c) 15 sec

77

4.7 Atomic force microscope (AFM) results of sample treated with H2SO4(96%) + H2O2(30%) for 5 seconds (a) distribution of diamond grain size, (b) average diamond grain size

79

4.8 Atomic Foce Microscope (AFM) 3D images of the diamond coated samples treated for, (a) 5 seconds, (b) 10 seconds, and (c) 15 seconds with H2SO4(96%) + H2O2(30%) solution

80

4.9 Surface roughness measurement using atomic force microscope (AFM) analysis of diamond coating onWC substrate chemically treated for 5 seconds

82

4.10 Raman Spectrum of the diamond coated WC samples treated with H2SO4(96%) + H2O2(30%) for 5, 10 and 15 seconds

83

4.11 FESEM images of the diamond flake-off area of the diamond coated WC samples treated with H2SO4(96%) + H2O2(30%) for (a) 5 sec, (b) 10 and (c) 15 seconds

85

4.12 FESEM images and EDX analysis of samples treated with HNO3(65%) + HCl(37%) + H2O (1:1:1 ratio) for (a) 3, (b) 6 and (c) 9 minutes

87

4.13 WC substrate surface roughness etched for 3, 6 and 9 minutes using HNO3(65%) + HCl(37%) + H2O solution

88

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4.14 SEM images of diamond coating on WC samples treated in HNO3(65%) + HCl(37%) + H2O solution for (a) 3, (b) 6 and (c) 9 min

89

4.15 XRD spectrums of diamond coating on WC samples treated in HNO3(65%) + HCl(37%) + H2O solution for (a) 3, (b) 6 and (c) 9 min

90

4.16 Atomic force microscope (AFM) results of sample treated with HNO3(65%) + HCl(37%) + H2O for 3 minutes (a) distribution of diamond grain size, (b) average diamond grain size

92

4.17 AFM 3D images of diamond coating of the samples treated for, (a) 3, (b) 6 and (c) 9 minutes treated with HNO3(65%) + HCl(37%) + H2O solution

93

4.18 Surface roughness measurement using atomic force microscope (AFM) analysis on diamond coating onWC substrate chemically treated for 3 minutes

95

4.19 Raman Spectrum of the diamond coated WC samples treated with HNO3(65%) + HCl(37%) + H2O solution for 3, 6 and 9 minutes

97

4.20 FESEM images of the flake-off area of diamond coated WC samples treated with HNO3(65%) + HCl(37%) + H2O solution for (a) 3, (b) 6 and (c) 9 minutes

98

4.21 FESEM images and EDX analysis of samples treated with HNO3(65%) + H2O2(30%) solution for (a) 30, (b) 60, and (c) 90 seconds

101

4.22 WC substrate surface roughness etched for 30, 60 and 90 seconds in HNO3(65%) + H2O2(30%) solution

102

4.23 FESEM images of diamond coating on WC samples treated with HNO3(65%) + H2O2(30%) solution for (a) 30, (b) 60 and (c) 90 seconds

103

4.24 XRD spectrums of diamond coating on WC samples treated in HNO3(65%) + H2O2(30%) solution for (a) 30, (b) 60 and (c) 90 seconds

104

4.25 Atomic force microscope (AFM) image of the sample treated with HNO3(65%) + H2O2(30%) for 30 seconds (a) distribution of diamond grain size, (b) average diamond grain size

106

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4.26 Atomic force microscope (AFM) 3D images of the diamond coating samples chemically treated for (a) 30, (b) 60 and (c) 90 seconds in HNO3(65%) + H2O2(30%) solution

107

4.27 Surface roughness measurement using atomic force microscope (AFM) analysis on diamond coating onWC substrate chemically treated for 30 seconds

109

4.28 Raman Spectrum of the diamond coated WC samples treated with HNO3(65%) + H2O2(30%) solution for 30, 60 and 90 seconds

110

4.29 FESEM images of the diamond flake-off area of the diamond coatings on WC samples treated with HNO3(65%) + H2O2(30%) solution for (a) 30, (b) 60 and (c) 90 seconds

112

4.30 Difference in adhesion strength in terms of (a) Flake-off diameter (µm) and (b) Flake-off time (seconds). (For X-axis: 1 = H2SO4 + H2O2, 2 = HNO3 + HCl + H2O, 3 = HNO3 + H2O2

116

4.31 FESEM images of diamond coating morphologies on WC substrate seeded with fixed size and concentration of diamond powder and various concentration of SiC powder, (a) 0 g/l, (b) 1 g/l, (c) 5 g/l and (d) 10 g/l

118

4.32 XRD spectrums of diamond coating seeded with diamond and SiC powder concentrations of (a) 0, (b) 1, (c) 5 and (d) 10 g/l

120

4.33 Three dimensional atomic force microscope (AFM) images of diamond coating seeded with diamond and SiC powder concentrations of (a) 0 g/l, (b) 1 g/l, (c) 5 g/l and (d) 10 g/l

122

4.34 Atomic force microscope (AFM) image analysis on diamond grain size and density of diamond coating seeded with 100% of diamond powder

123

4.35 Surface roughness measurement using atomic force microscope (AFM) analysis on diamond coating seeded with 1 g/l SiC powder

125

4.36 Raman spectrum of diamond coatings seeded with diamond and (a) 0 g/l, (b) 1 g/l, (c) 5 g/l and (d) 10 g/l of SiC powder

126

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4.37 FESEM images of the diamond flake-off size of the

diamond coatings seeded with diamond and SiC powder with the concentrations of (a) 0 g/l, (b) 1 g/l, (c) 5 g/l and (d) 10 g/l

129

4.38 FESEM images of the diamond coating morphologies after completion of grinding for selected feed rate of, (a) 0, (b) 0.015, (c) 0.045 and (d) 0.075 mm/min

133

4.39 FESEM images and the surface roughness (Ra) values of WC work piece ground with different feed rate, (a) 0, (b) 0.015, (c) 0.030, (d) 0.045, (e) 0.060 and (f) 0.075 mm/min

135

4.40 The trend of the WC work piece surface finish roughness after grinding at different feed rate.

138

4.41 FESEM images of fabricated diamond coated wheel at the grinding edge of in-house fabricated grinding tool. (a) top view and (b) side view at 160O angle

139

4.42 FESEM images of commercial diamond bonded tool at the grinding edge (a) top view and (b) side view at 160O angle

139

4.43 WC work piece mirror surface finish after grinding using (a) in-house fabricated diamond coated and (b) commercial diamond bonded wheels

140

4.44 FESEM images of WC work pieces after grinding with (a) fabricated diamond coated, and (b) commercial diamond bonded wheels

140

4.45 FESEM images of the grinding edge of the fabricated diamond coated tool after grinding using 0.2 mm/min feed rate, (a) top view and (b) side view

141

4.46 FESEM images of the grinding edge of the commercial diamond bonded tool after grinding using 0.2 mm/min feed rate, (a) top view and (b) side view

142

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LIST OF SYMBOLS

A - Ampere

Al2O3 - Aluminium oxide/Alumina

α - Diamond growth factor OC - Degree Celcius

CH3 - Methyl

CH4 - Methane

cm-1 - Per centimeter

cm2 - Centimeter square

cm-2 - Per centimetre square

Co - Cobalt

g/l - gram per liter

H - Atomic hydrogen

H2 - Hydrogen

H2O - Water

H2O2 - Hydrogen peroxide

H2SO4 - Sulphuric acid

HCl - Hydrochloric acid

HNO3 - Nitric acid

hr - hour

K - Kelvin degree

K3[Fe(CN)6} - Potassium ferro-cynide

KOH - Potassium hydroxide

Mbar - Milibar

µm - Micrometer

µmhr-1 - Micrometer per hour

ml/min - milliliter per minute

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mm/min - Milimeter per minute

Mo - Molybdenum

nm - Nanometer

Ra - Average roughness

sccm - Standard cubic centimeters per minute

sec - second

Si - Silicon

SiC - Silicon carbide

Ta - Tantalum

θ - Theta

Torr - Unit pressure

W - Tungsten/Wolfrum

WC - Tungsten Carbide

wt% - Weight percentage

ZrO2 - Zirconia

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LIST OF ABBREVIATIONS

AFM - Atomic Force Microscope

CTE - Coefficient of Thermal Expansion

CVD - Chemical Vapour Deposition

FESEM - Field Emission Scanning Electron Microscope

HFCVD - Hot Filament Chemical Vapour Deposition

HOPG - High Oriented Graphite Phase

IR - Infrared

PACVD - Plasma Assisted Chemical Vapour Deposition

SEM - Scanning Electron Microscope

UV - Ultraviolet

XRD - X-RAY Diffractometer

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LIST OF APPENDICES

APPENDIX TITLE PAGE

A List of Publications

155

B AFM Analysis of Diamond Surface Roughness Coated on WC Samples

156

C AFM Analysis of Diamond Grain Density and Size Coated on WC Samples

159

D Raman Spectrums of Diamond Film

167

E Calculations of Diamond Quality and Residual Stress

175

F Tungsten Carbide (WC) Work Piece Surface Finish Profiles Ground at Different Feed Rate

182

G Tungsten Carbide (WC) Work Piece Surface Finish Profiles Ground at Different Feed Rate

184

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CHAPTER 1

INTRODUCTION

1.1 Background of the Research

Since the introduction of first coating and coating process, it has been

recognized by the industry that the tool’s performance and its lifetime could be

extended by applying a hard surface to a cutting tool. Further gains in performance

and tool life have been achieved each time advancement in equipment and

technology has made it possible to develop new coatings. Today, there are several

coating processes and numerous types of coatings being used on a wide range of

tools.

One of the main coating materials that held a special interest in the hearts and

minds of the scientists, researchers and engineers is diamond. Diamond which

derived from the Greek word “adamas”, meaning “invincible” is a very impressive

material as it is the hardest known material with the lowest coefficient of thermal

expansion, chemically inert and wear resistance, offers low friction, has high thermal

conductivity, electrically insulating and is optically transparent from the ultraviolet

(UV) to the far infrared (IR) (Asfold et al, 1997). It is formed naturally deep in the

earth under extreme conditions of very high temperature and pressure and the only

known source of diamond for centuries.

With the introduction of high pressure high temperature (HPHT) method in

1950s (May, 1995), the first artificial diamond was crystallized through metal

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2

solvated carbon at pressure of about 80 kBar and temperature around 2000OC. For

more than three decades, “industrial diamonds” have been produced commercially by

this method. With the discovery of a various types of chemical vapour deposition

(CVD) techniques in 1960s by Spitsyn et al (1991) in Moscow, has sparked more

interest of scientific nature in this material. It involves the gas phase chemistry

mainly between hydrocarbon and hydrogen gaseous within the vicinity of the surface

which causes diamond deposition onto that surface.

Given all the many positive properties together with the availability of

various CVD techniques, diamond already finds use in many diverse applications as

the optical windows operating in severe environment, heat sinks in electronic

devices, semi conductors applications (field effect transistors, diodes, high voltage-

high current switch, radiation and gas detectors) as well as in mechanical

applications which are commercially available (abrasives, coating on cutting tools

such as inserts, drill bits, end mills, reamers and counter sinks) (Alix Gicquel et al,

2001).

One of the major considerations for the development and production of high

quality diamond coating on cutting tools using CVD techniques is the choice of

appropriate hard material substrates. These hard substrate materials should have

optimal thermal and mechanical properties such as heat conductivity, thermal

expansion coefficient, hardness and toughness as well as having good adaptation to

the CVD coating process. Hard cemented carbide mainly tungsten carbide (WC) that

was normally used as cutting tools was found to be the most suitable material as it

has all the required properties for diamond coating using CVD (Haubner, 1996). The

most widely used of WC for diamond coated cutting tools is WC-6 wt% Cobalt (Co)

which has been manufactured in various complex shapes such as inserts (Arumugam

et al., 2006), (Davim and Mata, 2008), end mills (Gomez et al., 2012), drill bits

(Hanyu et al., 2003), (Chen et al., 2002) and grinding tools (Chou et al., 2010),

(Butler-Smith et al., 2012).

However, the successful diamond coating using CVD technique onto the

WC-6 wt% Co substrate in terms of well faceted crystals, good adhesion, high

quality, uniform coverage and grain size depends on these factors:

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(a) Co content and the surface roughness of the WC-6wt % Co

(b) Diamond nucleation density

Co binder used in cemented carbide causes the diffusion and dissolution of carbon

during coating process which reduces the diamond nucleation rate and promote the

formation of graphite. This will results in poor coating quality as well as weaker

coating adhesion strength (Jan Gabler and Westermann, 2000; Miao et al., 2004).

During diamond deposition on cemented carbides a surface with only a minimum Co

concentration will allows good diamond deposition (M. Alam, 1997). This is

particularly important for the industrial formation of diamond coatings on cutting

tools. WC substrate surface roughness is essential in promoting high diamond

nucleation density. Amirhaghi (1999) has proved that the scratched area on WC

substrate surface produce high nucleation density as compare to non-scratched area

and this factor promote high adhesion strength, uniform coverage and grain size.

Various methods and techniques have been successfully employed to prepare

the WC substrate surface prior to diamnd coating such as introduction of Co inter-

diffusion barrier interlayer (Amirhaghi et al., 1999; Chou et al., 2008), biasing

(Chiang and Hon, 2008; (Saito et al., 2009) as well as chemical pretreatment (Saito

et al., 2009; Raghuveer et al., 2002). Two-step chemical pretreatment (Sien et al.,

2004; Volker Buck et al., 2002) followed with diamond seeding (Xu et al., 2013;

Wei et al., 2011) is however, simple, effective and widely used to roughen,

minimized surface Co concentration as well as creating better diamond nucleation

sites.

1.2 Problem Statement

Successful diamond coating on cemented WC requires solutions to the

problems of adequate diamond nucleation and most importantly poor adhesion. The

poor adhesion between diamond coating and the WC substrate results from the

thermal expansion mismatch between the diamond coating and the substrate, which

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4

lead to large thermal stresses at the interface, and the presence of binder materials

such as Co in the substrate, will enhance the graphite formation. Currently the most

effective, simple and cheap technique employed by most researchers to improve the

adhesion strength and nucleation density of diamond on WC substrate is through the

combination of two-step chemical pretreatment and diamond seeding process

(Almeida et al, 2011). The adhesion strength is further improved by mixing other

small particles such as Ti (Bujinster et al., 2009) and SiC (Avigal and Hoffmann,

1999) with diamond powder during seeding. However, this technique mostly applied

to produce not only high adhesion strength but also high diamond nucleation density

which means small and uniform grain size. This condition is only suitable for cutting

tools (inserts, end-mill and drill bits) in order to maintain the cutting point or cutting

edge of the tools as well as to provide wear resistant properties. However, for

abrasive application mainly for grinding, the rough surface finish of diamond film is

necessary where the entire diamond grains will act as cutting points for minute

material removal. At the same time it also provides clearance between the grains to

accommodate the grinding chips (Kopac and Krajnik, 2006). The smooth surface of

diamond film with very fine, uniform and high density of diamond grains is however

not suitable for grinding application as there will no cutting action take place.

Currently, most of the CVD diamond coated grinding wheels have been produced by

machining of solid CVD diamond pieces (Butler-Smith et al., 2012) or by laser

patterning the diamond grains (Butler-Smith et al, 2009) which is very costly

processes. The application of chemical pretreatment and seeding which is a viable

process and cheaper on WC grinding tools was however minimally reported. A

thought of applying smaller diamond powder size mix with larger size of second type

of powder on WC grinding wheel substrate surface during seeding that may produce

rough surface finish with larger grains of diamond coating and its grinding

performance which is unknown is worth to be investigated.

1.3 Objectives of the Research

The main objective of this research is to establish the hot filament chemical

vapour deposition (HFCVD) diamond coating film with high adhesion strength and

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5

quality with appropriate grain size and distribution suitable for grinding application.

The specific objectives for this research are as follows:

1. To determine suitable chemical pretreatment process and seeding

parameters that can produce high quality of diamond coating for

grinding application..

2. To evaluate and compare the grinding performance in terms of the

condition of the wheels and the surface finish of the work piece

between fabricated diamond coated WC and the commercial diamond

bonded WC wheels.

1.4 Scopes of the Research

The research scopes are as follows:

1. The cemented tungsten carbide (WC-6 wt% Co) was selected as a

substrate material.

2. Two-step pretreatment was chosen as the method to prepare the WC

substrate surface with the first step was fixed using Murakami solution

for 20 minutes. For second step of treatment, three different chemicals

were used with three different etching times.

3. Seeding process was conducted using fixed size and concentration of

diamond powder mixed with fixed size (174 μm) and different

concentrations (0, 1, 5 and 10 g/l) of SiC powders

4. Diamond coating was conducted using hot filament CVD (HFCVD)

with fixed parameters for 30 hours.

5. Surface characterizations on the chemically treated substrates were

analyzed by using FESEM, EDX and surface roughness tester for

element, morphology and surface roughness respectively.

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6

6. Surface characterization on the diamond coated substrates were

analyzed under FESEM, XRD, Raman Spectrometer, AFM for

morphology, quality and surface roughness

7. The adhesion strength of diamond films was determined through the

size of diamond flake-off area and time to flake-off using blasting

technique.

8. Grinding was performed on WC-2 wt% Co work piece using ultra-

precision cutting and grinding machine with varying feed rate as other

parameters are fixed.

9. Analysis of grinding was conducted on the grinding wheels in terms

of grinding edge conditions as well as on the WC samples in terms of

finishing surface morphology and roughness using FESEM and

surface profiler respectively.

1.5 Significance of the Research

This research is expected to provide an alternative method to produce suitable

CVD polycrystalline diamond on WC substrate for abrasive application which

should be comparable with diamond bonded wheels. With the application of simple

and cheap conventional two-step pretreatment process combine with mix seeding to

provide proper substrate conditions, should open up further research in producing

different grain sizes of diamond coating for different grinding applications.

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CHAPTER 5

CONCLUSIONS AND RECOMMENDATIONS FOR FUTURE WORK

5.1 Conclusions

Various methods have been employed to increase the adhesion

strength of CVD diamond film on to the WC substrate. Two-step

pretreatment followed with diamond powder seeding are found to be very

effective in increasing the diamond nucleation density with the purpose of

increasing the adhesion strength adhesion strength. Seeding using mixture of

diamond powder with large size of second material powders has been proved

more effective in increasing the diamond nucleation density. However, most

of the reports published used Si as a substrate. Employing even larger powder

size of second material during seeding with the intention of producing larger

diamond grain size and at the same time having high adhesion strength was

still not reported. This experimental study was conducted to determine the

effect using large second material powder size on the adhesion strength of

diamond film and the diamond grain size. The grinding tests were conducted

to determine the effectiveness of the produced diamond grains. This

experimental study is concluded with following findings:

1. Application of large SiC powder with small diamond powder size

during seeding has produced large HFCVD diamond grains with the

same structure consist of mixture of (111) and (220) structures

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144

regardless of the different second step pre-treatment. It is suspected

due to the same seeding condition conducted on all the samples.

However, the adhesion strength were varied, due to various factors

and such as high surface Co content, high residual stress as well as

lower density of diamond grains. Sample treated with HNO3 +

H2O2 for 60 seconds has the highest adhesion strength due to lowest

surface Co and highest grain concentration. This indicates that the

concentration of substrate surface Co and the diamond nucleation

density are the major factors in determine the adhesion strength.

2. The adhesion strength of the diamond film was also found to be

depend on the amount of large second material powders used during

the seeding. With the same pretreatment conducted on the samples, it

is clearly indicates that with a certain ratio of mix seeding, will

produce a certain adhesion strength. In this particular experiment,

sample seeded with diamond and 1 g/l has the highest adhesion

strength due to highest diamond grain concentration and diamond

quality. This selected seeding condition also produced almost uniform

height and distribution of diamond grain and on top of that sharp peak

of the grains which is suitable for grinding application. The diamond

grain concentration was lower as compare to sample seeded with only

diamond powder. This is expected as with only diamond powder used,

there was no restriction of the powders to be embedded into the WC

substrate surface. The adhesion strength of sample seeded with only

diamond, however was lower due to no hammering effect of large SiC

powder onto the diamond powder during seeding.

3. The mirror image surface finish with the minimum roughness, Ra of

0.007 µm of the WC work piece was achieved with no indication of

any defect occur to the diamond coated grinding wheel. When

grinding performance was compared with diamond bonded wheel, the

surface finish of the work piece was at par. However, the problem of

grinding chips clogging is obvious which commonly found in

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