subject index

EiAMOND RELATED MATERIALS

Diamond and Related Materials 4 (1995) xxiii-xxvi

Subject Index

Acetylene

Comparison between methane and acetylene as carbon sources

for C-rich a-Sic : H films, 473

Acetylene-oxygen flames

Combustion synthesis: most flexible diamond synthesis process?,

243

Amorphous carbon

Manufacture of a-C layers by r.f. dense plasma CVD, 302

N doping of ta-C, 441

Photoablation of graphite target by a KrF laser beam.

Realisation of hard C thin films, 309

Structural models of a-C and a-C : H, 297

Amorphous carbon films

Electroconductivity of a-C films containing Si and W, 488

Amorphous hydrogenated carbon

Deposition of Fe-C : H coatings from ferrocene precursor in

plasma-activated r.f. process, 346

Deposition of ta-C : H films by r.f. plasma discharges, 304

Deposition of cl-C : H films in a Hall accelerator plasma, 314

Effective correlation energies for defects in a-C : H from

comparison of photoelectron yield and ESR, 508

Influence of addition of CF, on deposition of a-C : H layers using

expanding thermal plasma, 328

Network connectivity and structural defects in a-C : H films, 492

Structural changes in doped a-C : H films during annealing, 482

Structural characterization of a-C : H and a-CN, : H films

deposited by PECVD, 499

Amorphous hydrogenated Sic films

Comparison between methane and acetylene as C sources for

C-rich a-Sic : H films, 473

Amorphous silicon-carbon films

Structural and optoelectronic properties of C-rich a-Sic : H films.

357

Annealing


Applications

Manufacture of a-C layers by r.f. dense plasma CVD, 302 Atomic force microscopy

Growth mechanisms of DLC films from Cf ions, 318

Atomic hydrogen

Quantitative measurements of atomic H during deposition of DLC films, 324

Atomic species

Atom beam treatment of diamond films, 445

Band structure

Valence band spectroscopy of reconstructed (100) and (111)

natural diamond, 539

BN phases

Elemental composition of thin c-BN layers, 478 Bonding



Boron doping

B and H concentrations in p-type diamond films by IR

spectroscopy, 469

Boron nitride

In-flame crystallization of metastable BN form, 386

Laser-induced reactive crystallization of metastable BN from Cu

implanted with B+ and N; ions, 381

Structure and chemical composition of BN thin films grown by

PLD, 370

Carbon nitride

Deposition by reactive ion-plasma sputtering and

characterization of C-N thin films, 390

N implantation into glassy carbon to grow carbon nitride thin

films, 292

Characterization

Characterization of CVD diamond films by nuclear techniques

with a particles, 517

Characterization of homoepitaxial diamond films by nuclear

methods, 503

Some effects of silicon substrate roughness on growth of highly

oriented (100) diamond films, 406

Chemical vapour deposition



Photoluminescence study of (100) textured CVD diamonds, 425

Step-related growth phenomena on exact and misoriented { 100)

surfaces of CVD-grown single-crystal diamonds, 250

Combustion flame CVD

In-flame crystallization of metastable BN form, 386

Combustion synthesis

Combustion synthesis: the most flexible diamond synthesis

process?, 243

Crystal growth

High pressure diamond and c-BN synthesis, 284

Cubic boron nitride

Elemental composition of thin c-BN layers, 478


Nucleation of c-BN with ion-induced PECVD, 375

R.f. ion plating-induced phase transition from h-BN to

nanocrystalline c-BN, 288

Recent results in c-BN deposition in light of sputter model, 272

Surface reconstructions of c-BN(OO1) N-rich surface, 532 CVD microwave

MWPACVD diamond homoepitaxial growth: role of plasma and

substrate parameters, 429 D.c. bias measurement

Characterization of bias nucleation process, 401 D.c. plasma CVD

Emission spectroscopy diagnostics of d.c. plasma jet diamond

reactor, 350 Measurement of electron energy distribution functions in

CH,-Ha plasma, 524

Defects

Characterization of homoepitaxial diamond films by nuclear

methods, 503


comparison of photoelectron yield and ESR, 508

Deposition mechanism Growth mechanisms of DLC films from C. ions. 318

Diamond

Characterization of bias nucleation process, 401

Combustion synthesis: the most flexible diamond synthesis

process?, 243

Dry etching of undoped and B doped polycrystalline diamond

films, 456

Epitaxy of diamond on Si. 394

Evolution of plumes produced by laser ablation of C target, 337

Micro-Raman for diamond film stress analysis, 460

MWPACVD diamond homoepitaxial growth: role of plasma and substrate parameters, 429

Optical second-harmonic generation on diamond C( 111) surface. 544

Prediction of feasibility of oriented diamond films by microwave PACVD, 419

Diamond films


Emission spectroscopy diagnostics of d.c. plasma jet dramond

reactor, 350

Influence of growth process on film texture of epitaxially

nucleated diamond on Si(OOl), 410

Relation between HFCVD diamond growth rate, line-width of

Raman spectrum and particle size. 464

Diamond nucleation


Effect of surface defects on CVD diamond nucleation of 6H Sic.

261

Nucleation during deposition of hydrocarbon ions as function of

substrate temperature, 333 Diamond-like carbon

Deposition of DLC film in CH,-He r.f. plasma, 342


Quantitative measurements of atomic H during deposition of

DLC films, 324


Diamond-like films

Deposition and characterization of a-C : N thin films, 361



Formation of ta-C : H. 26X

Growth mechanisms of DLC films from C tons. 3 18


substrate temperature, 333

Substrate bias effect on tribological properties of a-Sir ~. .C, : H

films, 366

Doping n-type N doping of ta-C, 441

Doping p-type Electrical properties of B-doped diamond films after annealing,

451

Elastic recoil detection

Elemental composition of thin c-BN layers, 478

Electroconductivity

Electroconductivity of a-C films containing Si and W, 488 Electron paramagnetic resonance

Deposition and characterization of a-C : N thin films, 361


comparison of photoelectron yield and ESR, 508 Network connectivity and structural defects in a-C : H films. 492

Electron spectroscopy


PLD. 370

Valence band spectroscopy of reconstructed ( 100) and (1 11)

natural diamond, 539

Gas phase chemistry

Gas-phase mechanisms in MWCVD ad HFCVD diamond

deposition, 256

Gas phase diagnostics

Emission spectroscopy diagnostics of d.c. plasma jet diamond

reactor. 350

Gas-phase mechanisms in MWCVD and HFCVD diamond

deposition, 256

Gas phase reactors


Growth mechanisms

Hypothetical C,,, molecule and diamond&graphite interface:

unstable and metastable states of carbon, 528

Growth morphology


with x particles, 517

M WPACVD diamond homoepitaxal growth: role of plasma and

substrate parameters, 429

Relation between HFCVD diamond growth rate. line-width of

Raman spectrum and particle size. 464

Hardness

Photoablation of graphite target by KrF laser beam. Realisation

of hard C thin films, 309

Heated filament CVD


deposition, 256

Heteroepitaxy

Epitaxy of diamond on Si, 394


nucleated diamond on Si (00 I ). 410

High pressure synthetic diamond


High pressure/high temperature synthesis

High pressure diamond and c-BN synthesis. 284

High resolution depth profiling

Elemental composition of thin c-BN layers. 478

Homoepitaxy

Characterizatton of homoepitaxial diamond films by nuclear

methods, 503

MWPACVD diamond homoepitaxial growth: role of plasma and

substrate parameters, 429 Valence-band spectra of hydrogenated diamond ( I 1 1) surface, 520

Hydrocarbon plasma

Deposition of r-C : H films in Hall accelerator plasma, 314

Hydrogen

Atom beam treatment of diamond tilms, 445 Characterization of homoepitaxial diamond films by nuclear

methods, 503

Opttcal second-harmonic generation on diamond C( 111) surface.

544

Hydrogen desorption

Valence band spectroscopy of reconstructed (100) and ( 11 1)

natural diamond. 539

Implantation N implantation into glassy carbon to grow carbon nitride thin

film. 292

Subject Index XX”

Impurities


spectroscopy, 469


In-situ characterization



In-situ diagnostics

Measurement of electron energy distribution functions in

methane-hydrogen plasmas, 524

Infrared absorption


Electrical properties of B-doped diamond films after annealing,

451


spectroscopy, 469


nanocrystalline c-BN, 288

Infrared transmission




of hard C thin films, 309

Interfaces

Hypothetical C,,, molecule and diamond-graphite interface:

unstable and metastable states of C, 528

Ion beam growth Formation of ta-C : H, 268

Growth mechanisms of DLC films from C+ ions, 318


substrate temperature, 333

Ion bombardment Deposition of Fe-C : H coatings from ferrocene precursor in



nanocrystalline c-BN, 288 Ion implantation

Effect of surface defects on CVD diamond nucleation on 6H SIC,

261


implanted with Bt and N,i ions, 381

Ion-assisted deposition



Laser Evolution of plumes produced by laser ablation of C target, 337

Laser ablation


of hard C thin films, 309 Laser irradiation


implanted with B+ and N: ions, 381

Laser-assisted PVD


PLD, 370

Mechanical properties Deposition of DLC film in CH,-He r.f. plasma, 342 Substrate bias effect on tribological properties of a-Si, _ .C, : H

films, 366

Metastable carbon

Hypothetical C,,, molecule and diamond-graphite interface:


Metastable phase Laser-induced reactive crystallization of metastable BN from Cu

implanted with B+ and Nz ions, 381

Methane

Comparison between methane and acetylene as C sources for

C-rich a-Sic : H films, 473

Microstructural characterization


with c( particles, 5 17

Microstructure

Combustion synthesis: most flexible diamond synthesis process?,

243

Microwave plasma CVD


spectroscopy, 469


deposition, 256

Prediction of feasibility of oriented diamond films by microwave

PACVD, 419

Effects of Si substrate roughness on growth of highly oriented

(100) diamond films, 406

Valence-band spectra of hydrogenated diamond ( 111) surface, 520

Modelling

Hypothetical CiO,, molecule and diamond-graphite interface:


Indications of non-monotonic texture evolution from 2D

simulation study, 416

Nitrogen


Deposition and characterization of a-C: N thin films, 361


Nucleation

Effect of surface defects on CVD diamond nucleation on 6H Sic,

261

Epitaxy of diamond on Si, 394


Nucleation and growth Nucleation of c-BN with ion-induced PECVD, 375

Effects of Si substrate roughness on growth of highly oriented


Optoelectronic properties

Structural and optoelectronic properties of C-rich a-Sic : H films,

357 Orientation

Effects of Si substrate roughness on the growth of highly oriented


PECVD


Phonon scattering


Raman spectrum and particle size, 464

Photochemical modification

Properties of photochemically modified diamond films, 435

Photoluminescence

Photoluminescence of (100) textured CVD diamonds, 425

Plasma diagnostics

Deposition of DLC film in CH,-He r.f. plasma, 342 Measurement of electron energy distribution functions in

methane-hydrogen plasmas, 524

Plasma etching


films, 456 Plasma jet

Emission spectroscopy diagnostics of dc. plasma jet diamond

reactor, 350 Influence of addition of CF, on deposition of a-C : H layers using


xxvi Subject Index

Polycrystalline diamond films


with OL particles, 517

Spectroscopy


films, 456

Evolution of plumes produced by laser ablation of C target, 337 Valence-band spectra of hydrogenated diamond (111) surface, 520

Sputtering

Electrical properties of B-doped diamond films after annealing,

451

Indications of non-monotonic texture evolution from 2D

simulation, 416

Recent results in c-BN deposition in light of sputter model. 272

Step-controlled epitaxy Step-related growth phenomena on exact and misoriented (001)


Stress

Properties of photochemically modified diamond films, 435

Positron annihilation

Structural characterization of a-C : H and a-CN, : H film


Processing-microstructure relations

Prediction of feasibility of oriented diamond films by microwave

PACVD, 419

Micro-Raman for diamond film stress analysis, 460 R.f. ion plating-induced phase transition from h-BN to

nanocrystalline c-BN, 288 Structural characterization


substrate temperature, 333 Structural characterization of a-C : H and a-CN, : H nitride films


Structure calculations R.f. plasma CVD

Deposition of DLC film in CH,-He r.f. plasma, 342



Quantitative measurements of atomic H during deposition of

DLC films, 324

Structure models of a-C and a-C : H. 297

Surface Dry etching of undoped and B doped polycrystalline diamond

films, 456

Substrate bias effect on tribological properties of a-Si,.,C,: H

films, 366

Radical species

Surface characterization Optical second-harmonic generation on diamond C( I I I ) surface,

544

Evolution of plumes produced by laser ablation of C target, 337

Raman spectroscopy

Step-related growth phenomena on exact and misoriented (001) surfaces of CVD-grown single-crystal diamonds, 250

Valence band spectroscopy of reconstructed (100) and ( 111) natural diamond, 539

Micro-Raman for diamond films stress analysis, 460


Raman spectrum and particle size, 464


Structural characterization of a-C : H and a-CN,: H films

deposited by PECVD, 499 Structure and chemical composition of BN thin films grown by

PLD, 370

Reactive ion plasma

Valence-band spectra of hydrogenated diamond ( I 11) surface, 520

Surface chemistry Optical second-harmonic generation on diamond C( 111) surface,

544 Surface energy

Surface reconstructions of c-BN(OO1) N-rich surface, 532 Surface structure

Surface reconstructions of c-BN(OO1) N-rich surface, 532

Deposition by reactive ion-plasma sputtering and

characterization of C-N thin films, 390

Texture development Indications of non-monotonic texture evolution from 2D

simulation, 416

Silicon carbide Effect of surface defects on CVD diamond nucleation on 6H Sic.

261

Silicon-carbon films


nucleated diamond on Si(OO1). 410 Prediction of feasibility of oriented diamond films by microwave

PACVD, 419 Tribological properties

Structural and optoelectronic properties of C-rich and a-Sic : H Substrate bias effect on tribological properties of a-Sir _,C,: H films, 357 films, 366

Single crystals Twinning Step-related growth phenomena on exact and misoriented {OOl}


sp* Bonding

Influence of growth process on film texture of epitaxially nucleated diamond on Si(OO1). 410

Formation of ta-C : H, 268

Network connectivity and structural defects in a-C : H films, 492

sp3 Bonding

Vibrational spectroscopy Network connectivity and structural defects in a-C : H films, 492

Deposition of ta-C : H films by r.f. plasma discharges. 304

Formation of ta-C : H, 268

X-ray photoelectron spectroscopy N implantation into glassy carbon to grow C,N, thin films. 292

subject index

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