Download - Subject index
EiAMOND RELATED MATERIALS
Diamond and Related Materials 4 (1995) xxiii-xxvi
Subject Index
Acetylene
Comparison between methane and acetylene as carbon sources
for C-rich a-Sic : H films, 473
Acetylene-oxygen flames
Combustion synthesis: most flexible diamond synthesis process?,
243
Amorphous carbon
Manufacture of a-C layers by r.f. dense plasma CVD, 302
N doping of ta-C, 441
Photoablation of graphite target by a KrF laser beam.
Realisation of hard C thin films, 309
Structural models of a-C and a-C : H, 297
Amorphous carbon films
Electroconductivity of a-C films containing Si and W, 488
Amorphous hydrogenated carbon
Deposition of Fe-C : H coatings from ferrocene precursor in
plasma-activated r.f. process, 346
Deposition of ta-C : H films by r.f. plasma discharges, 304
Deposition of cl-C : H films in a Hall accelerator plasma, 314
Effective correlation energies for defects in a-C : H from
comparison of photoelectron yield and ESR, 508
Influence of addition of CF, on deposition of a-C : H layers using
expanding thermal plasma, 328
Network connectivity and structural defects in a-C : H films, 492
Structural changes in doped a-C : H films during annealing, 482
Structural characterization of a-C : H and a-CN, : H films
deposited by PECVD, 499
Amorphous hydrogenated Sic films
Comparison between methane and acetylene as C sources for
C-rich a-Sic : H films, 473
Amorphous silicon-carbon films
Structural and optoelectronic properties of C-rich a-Sic : H films.
357
Annealing
Structural changes in doped a-C : H films during annealing, 482
Applications
Manufacture of a-C layers by r.f. dense plasma CVD, 302 Atomic force microscopy
Growth mechanisms of DLC films from Cf ions, 318
Atomic hydrogen
Quantitative measurements of atomic H during deposition of DLC films, 324
Atomic species
Atom beam treatment of diamond films, 445
Band structure
Valence band spectroscopy of reconstructed (100) and (111)
natural diamond, 539
BN phases
Elemental composition of thin c-BN layers, 478 Bonding
N doping of ta-C, 441
Structural models of a-C and a-C : H, 297
Boron doping
B and H concentrations in p-type diamond films by IR
spectroscopy, 469
Boron nitride
In-flame crystallization of metastable BN form, 386
Laser-induced reactive crystallization of metastable BN from Cu
implanted with B+ and N; ions, 381
Structure and chemical composition of BN thin films grown by
PLD, 370
Carbon nitride
Deposition by reactive ion-plasma sputtering and
characterization of C-N thin films, 390
N implantation into glassy carbon to grow carbon nitride thin
films, 292
Characterization
Characterization of CVD diamond films by nuclear techniques
with a particles, 517
Characterization of homoepitaxial diamond films by nuclear
methods, 503
Some effects of silicon substrate roughness on growth of highly
oriented (100) diamond films, 406
Chemical vapour deposition
Deposition of Fe-C : H coatings from ferrocene precursor in
plasma-activated r.f. process, 346
Photoluminescence study of (100) textured CVD diamonds, 425
Step-related growth phenomena on exact and misoriented { 100)
surfaces of CVD-grown single-crystal diamonds, 250
Combustion flame CVD
In-flame crystallization of metastable BN form, 386
Combustion synthesis
Combustion synthesis: the most flexible diamond synthesis
process?, 243
Crystal growth
High pressure diamond and c-BN synthesis, 284
Cubic boron nitride
Elemental composition of thin c-BN layers, 478
High pressure diamond and c-BN synthesis, 284
Nucleation of c-BN with ion-induced PECVD, 375
R.f. ion plating-induced phase transition from h-BN to
nanocrystalline c-BN, 288
Recent results in c-BN deposition in light of sputter model, 272
Surface reconstructions of c-BN(OO1) N-rich surface, 532 CVD microwave
MWPACVD diamond homoepitaxial growth: role of plasma and
substrate parameters, 429 D.c. bias measurement
Characterization of bias nucleation process, 401 D.c. plasma CVD
Emission spectroscopy diagnostics of d.c. plasma jet diamond
reactor, 350 Measurement of electron energy distribution functions in
CH,-Ha plasma, 524
Defects
Characterization of homoepitaxial diamond films by nuclear
methods, 503
Effective correlation energies for defects in a-C : H from
comparison of photoelectron yield and ESR, 508
Deposition mechanism Growth mechanisms of DLC films from C. ions. 318
Diamond
Characterization of bias nucleation process, 401
Combustion synthesis: the most flexible diamond synthesis
process?, 243
Dry etching of undoped and B doped polycrystalline diamond
films, 456
Epitaxy of diamond on Si. 394
Evolution of plumes produced by laser ablation of C target, 337
Micro-Raman for diamond film stress analysis, 460
MWPACVD diamond homoepitaxial growth: role of plasma and substrate parameters, 429
Optical second-harmonic generation on diamond C( 111) surface. 544
Prediction of feasibility of oriented diamond films by microwave PACVD, 419
Diamond films
Atom beam treatment of diamond films, 445
Emission spectroscopy diagnostics of d.c. plasma jet dramond
reactor, 350
Influence of growth process on film texture of epitaxially
nucleated diamond on Si(OOl), 410
Relation between HFCVD diamond growth rate, line-width of
Raman spectrum and particle size. 464
Diamond nucleation
Characterization of bias nucleation process, 401
Effect of surface defects on CVD diamond nucleation of 6H Sic.
261
Nucleation during deposition of hydrocarbon ions as function of
substrate temperature, 333 Diamond-like carbon
Deposition of DLC film in CH,-He r.f. plasma, 342
Deposition of ta-C : H films by r.f. plasma discharges, 304
Quantitative measurements of atomic H during deposition of
DLC films, 324
Structural models of a-C and a-C : H, 297
Diamond-like films
Deposition and characterization of a-C : N thin films, 361
Deposition of Fe-C : H coatings from ferrocene precursor in
plasma-activated r.f. process, 346
Formation of ta-C : H. 26X
Growth mechanisms of DLC films from C tons. 3 18
Nucleation during deposition of hydrocarbon ions as function of
substrate temperature, 333
Substrate bias effect on tribological properties of a-Sir ~. .C, : H
films, 366
Doping n-type N doping of ta-C, 441
Doping p-type Electrical properties of B-doped diamond films after annealing,
451
Elastic recoil detection
Elemental composition of thin c-BN layers, 478
Electroconductivity
Electroconductivity of a-C films containing Si and W, 488 Electron paramagnetic resonance
Deposition and characterization of a-C : N thin films, 361
Effective correlation energies for defects in a-C : H from
comparison of photoelectron yield and ESR, 508 Network connectivity and structural defects in a-C : H films. 492
Electron spectroscopy
Structure and chemical composition of BN thin films grown by
PLD. 370
Valence band spectroscopy of reconstructed ( 100) and (1 11)
natural diamond, 539
Gas phase chemistry
Gas-phase mechanisms in MWCVD ad HFCVD diamond
deposition, 256
Gas phase diagnostics
Emission spectroscopy diagnostics of d.c. plasma jet diamond
reactor. 350
Gas-phase mechanisms in MWCVD and HFCVD diamond
deposition, 256
Gas phase reactors
Manufacture of a-C layers by r.f. dense plasma CVD, 302
Growth mechanisms
Hypothetical C,,, molecule and diamond&graphite interface:
unstable and metastable states of carbon, 528
Growth morphology
Characterization of CVD diamond films by nuclear techniques
with x particles, 517
M WPACVD diamond homoepitaxal growth: role of plasma and
substrate parameters, 429
Relation between HFCVD diamond growth rate. line-width of
Raman spectrum and particle size. 464
Hardness
Photoablation of graphite target by KrF laser beam. Realisation
of hard C thin films, 309
Heated filament CVD
Gas-phase mechanisms in MWCVD and HFCVD diamond
deposition, 256
Heteroepitaxy
Epitaxy of diamond on Si, 394
Influence of growth process on film texture of epitaxially
nucleated diamond on Si (00 I ). 410
High pressure synthetic diamond
High pressure diamond and c-BN synthesis, 284
High pressure/high temperature synthesis
High pressure diamond and c-BN synthesis. 284
High resolution depth profiling
Elemental composition of thin c-BN layers. 478
Homoepitaxy
Characterizatton of homoepitaxial diamond films by nuclear
methods, 503
MWPACVD diamond homoepitaxial growth: role of plasma and
substrate parameters, 429 Valence-band spectra of hydrogenated diamond ( I 1 1) surface, 520
Hydrocarbon plasma
Deposition of r-C : H films in Hall accelerator plasma, 314
Hydrogen
Atom beam treatment of diamond tilms, 445 Characterization of homoepitaxial diamond films by nuclear
methods, 503
Opttcal second-harmonic generation on diamond C( 111) surface.
544
Hydrogen desorption
Valence band spectroscopy of reconstructed (100) and ( 11 1)
natural diamond. 539
Implantation N implantation into glassy carbon to grow carbon nitride thin
film. 292
Subject Index XX”
Impurities
B and H concentrations in p-type diamond films by IR
spectroscopy, 469
Structural changes in doped a-C : H films during annealing, 482
In-situ characterization
Influence of addition of CF, on deposition of a-C : H layers using
expanding thermal plasma, 328
In-situ diagnostics
Measurement of electron energy distribution functions in
methane-hydrogen plasmas, 524
Infrared absorption
Characterization of bias nucleation process, 401
Electrical properties of B-doped diamond films after annealing,
451
B and H concentrations in p-type diamond films by IR
spectroscopy, 469
R.f. ion plating-induced phase transition from h-BN to
nanocrystalline c-BN, 288
Infrared transmission
Influence of addition of CF, on deposition of a-C : H layers using
expanding thermal plasma, 328
Photoablation of graphite target by KrF laser beam. Realisation
of hard C thin films, 309
Interfaces
Hypothetical C,,, molecule and diamond-graphite interface:
unstable and metastable states of C, 528
Ion beam growth Formation of ta-C : H, 268
Growth mechanisms of DLC films from C+ ions, 318
Nucleation during deposition of hydrocarbon ions as function of
substrate temperature, 333
Ion bombardment Deposition of Fe-C : H coatings from ferrocene precursor in
plasma-activated r.f. process, 346
R.f. ion plating-induced phase transition from h-BN to
nanocrystalline c-BN, 288 Ion implantation
Effect of surface defects on CVD diamond nucleation on 6H SIC,
261
Laser-induced reactive crystallization of metastable BN from Cu
implanted with Bt and N,i ions, 381
Ion-assisted deposition
Nucleation of c-BN with ion-induced PECVD, 375
Recent results in c-BN deposition in light of sputter model, 272
Laser Evolution of plumes produced by laser ablation of C target, 337
Laser ablation
Photoablation of graphite target by KrF laser beam. Realisation
of hard C thin films, 309 Laser irradiation
Laser-induced reactive crystallization of metastable BN from Cu
implanted with B+ and N: ions, 381
Laser-assisted PVD
Structure and chemical composition of BN thin films grown by
PLD, 370
Mechanical properties Deposition of DLC film in CH,-He r.f. plasma, 342 Substrate bias effect on tribological properties of a-Si, _ .C, : H
films, 366
Metastable carbon
Hypothetical C,,, molecule and diamond-graphite interface:
unstable and metastable states of C, 528
Metastable phase Laser-induced reactive crystallization of metastable BN from Cu
implanted with B+ and Nz ions, 381
Methane
Comparison between methane and acetylene as C sources for
C-rich a-Sic : H films, 473
Microstructural characterization
Characterization of CVD diamond films by nuclear techniques
with c( particles, 5 17
Microstructure
Combustion synthesis: most flexible diamond synthesis process?,
243
Microwave plasma CVD
B and H concentrations in p-type diamond films by IR
spectroscopy, 469
Gas-phase mechanisms in MWCVD and HFCVD diamond
deposition, 256
Prediction of feasibility of oriented diamond films by microwave
PACVD, 419
Effects of Si substrate roughness on growth of highly oriented
(100) diamond films, 406
Valence-band spectra of hydrogenated diamond ( 111) surface, 520
Modelling
Hypothetical CiO,, molecule and diamond-graphite interface:
unstable and metastable states of C, 528
Indications of non-monotonic texture evolution from 2D
simulation study, 416
Nitrogen
Atom beam treatment of diamond films, 445
Deposition and characterization of a-C: N thin films, 361
N doping of ta-C, 441
Nucleation
Effect of surface defects on CVD diamond nucleation on 6H Sic,
261
Epitaxy of diamond on Si, 394
Recent results in c-BN deposition in light of sputter model, 272
Nucleation and growth Nucleation of c-BN with ion-induced PECVD, 375
Effects of Si substrate roughness on growth of highly oriented
(100) diamond films, 406
Optoelectronic properties
Structural and optoelectronic properties of C-rich a-Sic : H films,
357 Orientation
Effects of Si substrate roughness on the growth of highly oriented
(100) diamond films, 406
PECVD
Nucleation of c-BN with ion-induced PECVD, 375
Phonon scattering
Relation between HFCVD diamond growth rate, line-width of
Raman spectrum and particle size, 464
Photochemical modification
Properties of photochemically modified diamond films, 435
Photoluminescence
Photoluminescence of (100) textured CVD diamonds, 425
Plasma diagnostics
Deposition of DLC film in CH,-He r.f. plasma, 342 Measurement of electron energy distribution functions in
methane-hydrogen plasmas, 524
Plasma etching
Dry etching of undoped and B doped polycrystalline diamond
films, 456 Plasma jet
Emission spectroscopy diagnostics of dc. plasma jet diamond
reactor, 350 Influence of addition of CF, on deposition of a-C : H layers using
expanding thermal plasma, 328
xxvi Subject Index
Polycrystalline diamond films
Characterization of CVD diamond films by nuclear techniques
with OL particles, 517
Spectroscopy
Dry etching of undoped and B doped polycrystalline diamond
films, 456
Evolution of plumes produced by laser ablation of C target, 337 Valence-band spectra of hydrogenated diamond (111) surface, 520
Sputtering
Electrical properties of B-doped diamond films after annealing,
451
Indications of non-monotonic texture evolution from 2D
simulation, 416
Recent results in c-BN deposition in light of sputter model. 272
Step-controlled epitaxy Step-related growth phenomena on exact and misoriented (001)
surfaces of CVD-grown single-crystal diamonds, 250
Stress
Properties of photochemically modified diamond films, 435
Positron annihilation
Structural characterization of a-C : H and a-CN, : H film
deposited by PECVD, 499
Processing-microstructure relations
Prediction of feasibility of oriented diamond films by microwave
PACVD, 419
Micro-Raman for diamond film stress analysis, 460 R.f. ion plating-induced phase transition from h-BN to
nanocrystalline c-BN, 288 Structural characterization
Nucleation during deposition of hydrocarbon ions as function of
substrate temperature, 333 Structural characterization of a-C : H and a-CN, : H nitride films
deposited by PECVD, 499
Structure calculations R.f. plasma CVD
Deposition of DLC film in CH,-He r.f. plasma, 342
Deposition of ta-C : H films by r.f. plasma discharges, 304
Manufacture of a-C layers by r.f. dense plasma CVD, 302
Quantitative measurements of atomic H during deposition of
DLC films, 324
Structure models of a-C and a-C : H. 297
Surface Dry etching of undoped and B doped polycrystalline diamond
films, 456
Substrate bias effect on tribological properties of a-Si,.,C,: H
films, 366
Radical species
Surface characterization Optical second-harmonic generation on diamond C( I I I ) surface,
544
Evolution of plumes produced by laser ablation of C target, 337
Raman spectroscopy
Step-related growth phenomena on exact and misoriented (001) surfaces of CVD-grown single-crystal diamonds, 250
Valence band spectroscopy of reconstructed (100) and ( 111) natural diamond, 539
Micro-Raman for diamond films stress analysis, 460
Relation between HFCVD diamond growth rate, line-width of
Raman spectrum and particle size, 464
Structural changes in doped a-C : H films during annealing, 482
Structural characterization of a-C : H and a-CN,: H films
deposited by PECVD, 499 Structure and chemical composition of BN thin films grown by
PLD, 370
Reactive ion plasma
Valence-band spectra of hydrogenated diamond ( I 11) surface, 520
Surface chemistry Optical second-harmonic generation on diamond C( 111) surface,
544 Surface energy
Surface reconstructions of c-BN(OO1) N-rich surface, 532 Surface structure
Surface reconstructions of c-BN(OO1) N-rich surface, 532
Deposition by reactive ion-plasma sputtering and
characterization of C-N thin films, 390
Texture development Indications of non-monotonic texture evolution from 2D
simulation, 416
Silicon carbide Effect of surface defects on CVD diamond nucleation on 6H Sic.
261
Silicon-carbon films
Influence of growth process on film texture of epitaxially
nucleated diamond on Si(OO1). 410 Prediction of feasibility of oriented diamond films by microwave
PACVD, 419 Tribological properties
Structural and optoelectronic properties of C-rich and a-Sic : H Substrate bias effect on tribological properties of a-Sir _,C,: H films, 357 films, 366
Single crystals Twinning Step-related growth phenomena on exact and misoriented {OOl}
surfaces of CVD-grown single-crystal diamonds, 250
sp* Bonding
Influence of growth process on film texture of epitaxially nucleated diamond on Si(OO1). 410
Formation of ta-C : H, 268
Network connectivity and structural defects in a-C : H films, 492
sp3 Bonding
Vibrational spectroscopy Network connectivity and structural defects in a-C : H films, 492
Deposition of ta-C : H films by r.f. plasma discharges. 304
Formation of ta-C : H, 268
X-ray photoelectron spectroscopy N implantation into glassy carbon to grow C,N, thin films. 292