status of the active sensors federico ravotti (cern ts/lea) maurice glaser, michael moll (cern...

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Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova – GEANT4 Team) • Low Dose Rate (LDR) response of Catalogue Sensors in hadron field; • (Very)-long term annealing studies for REM and LAAS RadFETs; • Annealing parametrization for BPW34F; • RadFET packaging studies and GEANT4 simulations; • Integrated sensor carrier; • Sensors delivery status.

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Page 1: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

Status of the Active Sensors

Federico Ravotti (CERN TS/LEA)

Maurice Glaser, Michael Moll (CERN PH/DT2)

Susanna Guatelli, Maria Grazia Pia (INFN, Genova – GEANT4 Team)

• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;

• (Very)-long term annealing studies for REM and LAAS RadFETs;

• Annealing parametrization for BPW34F;

• RadFET packaging studies and GEANT4 simulations;

• Integrated sensor carrier;

• Sensors delivery status.

Page 2: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

Outline

• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;

• (Very)-long term annealing studies for REM and LAAS RadFETs;

• Annealing parametrization for BPW34F;

• RadFET packaging studies and GEANT4 simulations;

• Integrated sensor carrier;

• Sensors delivery status.

Page 3: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 3

LDR Test Setup 1/3 • Mixed radiation field with Ch.

Hadrons generated by backscattered particles;

• Several intensities of the radiation field available (r,Z) focused on LDR;

• Facility operated under different beam conditions and shutdown periods;

• Variable temperature conditions.

[C. Leroy & P. Roy: UdeM-GPP-EXP-98-03, 1998]

24 GeV/c protons Z

r

(selected irradiation positions in PS-T7 area at different Z and r)

IRRAD1

IRRAD5

IRRAD3

Page 4: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 4

LDR Test Setup 2/3

PRIMARY BEAM

SECONDARY BEAMdegraded primary beam

&Secondary particles

= measurement locations (5 positions)

PMI

Mag. QF003

r = 60 to 140Z

r

Page 5: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 5

LDR Test Setup 3/3

Page 6: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 6

Calibration curves

BPW34: 1/c = 9.1x109 cm2/mV 20

%

CMRP: 1/c = 1.7x108 cm2/mV 13 %

REM/LAAS: V = a x Db 10

%

a & b change with dose-

range

(a) – (e) different rates down to 3x1011 cm-

2h-1

BPW/CMRP: V = c x eq

sensitivity(/cm2)

sensitivity(/cm2)

Page 7: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 7

First Irradiation RunRemnant dose-rate from north

branch~ 2 mGy/h PMI signal saturation

&LAAS absorbed > 10 Gy

Primary

Beam

Secondary Beam

T7 beam-line failure

Scaled beam intensity linearly fits the

CMRP signals down to the lower flux

(~5x108 neq/cm2/h)

CMRP super-linear &

BPW34 start to be

sensitive

LAASLAAS

CMRPCMRP

Page 8: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 8

Measurements vs Simulations

In order to verify the scaling done with CMRP devices comparison with MC simulations;

eq has been converted into neutron fluence by means of k = 1.21 9.1 %

position= 5 cm

fluence = 16.2 %

Sim-A (r,Z) and Sim-B (r) differ in the number of

events and slightly in the T7 area layout and materials

composition of the modeled area.

Sim-B is expected to be more accurate!

Sim-ASim-B

Page 9: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 9

Second Irradiation Run

Dose from REM is in agreement within 10 % with respect to PAD

&eq from BPW34 is in agreement within

20 % with respect to the particle fluence scaling

REM measurements compared with PAD (Alanine)

Dose deposition dominated by charged particles!

Primary

Beam

Secondary Beam

At all rates BPW needs to be corrected

against short- & long-term annealing

CMRP super-linear &

BPW34 start to be

sensitive

Scaling CMRP in agreement with MC

REREMM

BPW3BPW344

Page 10: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 10

– REM devices are LET

insensitive up to 20 kGy;

– In the range 10-500 Gy the

“unbiased” LAAS response is

LET dependent (drop in Eox);

– Experimental results show

correlation between the

sensitivities ratio REM/LAAS

and changes in beam

conditions!

These Results will be presented at the RADECS Workshop 2006, Athens, Sept. 27-29

Changes in spectral composition

Second Irradiation Run

~ 30 Gy ~ 450 Gy

After 10 Gy the REM/LAAS sensitivity ratio could be used to detect variations in the spectral composition!

Page 11: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

Outline

• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;

• (Very)-long term annealing studies for REM and LAAS RadFETs;

• Annealing parametrization for BPW34F;

• RadFET packaging studies and GEANT4 simulations;

• Integrated sensor carrier;

• Sensors delivery status.

Page 12: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 12

Annealing RadFETs 1/3

LAAS

IRRAD6 () low TID (~ tens Gy) & eq < 1x1012

cm-2

IRRAD6 high TID & eq ~ 2x1013

cm-2

IRRAD1 pure 24 GeV/c protons

[G. Sarrabayrouse, CNRS-LAAS]

after 10 Gy at RT 1-2 % after 2000 h

Our measurement confirms isothermal annealing data of low TID exposed devices according to the recover of the oxide trapped charge! (TID effect)

this is what we need at the LHC … however …

… where this isochronal annealing behavior comes from ?

The prediction out of it doesn’t match the experimental isothermal annealing data we

got in IRRAD6 !

Isochronal annealing (6 min)

Isothermal annealing

Prediction from Isochrones

Page 13: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 13

Annealing RadFETs 2/3

Can the additional degradation

at high doses be due to

displacement damage ?

Study submitted to APL (in press). Details on

preprint:

CERN-PH-EP\2006-21; CERN-TS-2006-002,

27/6/06

Vth=Vgs (iD)

“Threshold Voltage” ??

Vth = VT-(iD/)

Transistors

= (MOS channel

resistance)

RadFETs

1. T* from 24 GeV/c proton data;

2. Identification of Si-bulk

defects;

3. Determination of EAi, Ai, Bi;

4. Computation of defects;

dissociation: UF=iBie(-t)

24 GeV/p

Page 14: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 14

Annealing RadFETs 3/3

REM Isothermal

annealing lower than 7 %

over 14 months after > 2

kGy in mixed field and with

temperature variations of

more than 15 ºC !The different behaviors

are probably

explainable in terms of

different Qot / Qit

contribution …

REM in IRRAD6

… hypothesis under verification with Isochronal Annealing

+“Winokur” method on 60Co irradiated samples at UM-II (M.

Bernard)

REM Isochronal annealing after irradiation in different fields Homogeneous

curves!

Page 15: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

Outline

• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;

• (Very)-long term annealing studies for REM and LAAS RadFETs;

• Annealing parametrization for BPW34F;

• RadFET packaging studies and GEANT4 simulations;

• Integrated sensor carrier;

• Sensors delivery status.

Page 16: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 16

Annealing BPW34 1/2

Series of BPW34 diodes irradiated and annealed in water bath

(packaging issue) at different temperatures Annealing

dependence (,T)

Page 17: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 17

Annealing BPW34 2/2

Parametrization of the phenomenon (~M. Moll thesis for Si

detector diodes)

VF(t) = A - exp (-t/) – ln (t/t0), t0 = 1;

A = a1 eq + b1, T independent!

= a2 eq + b2, T independent!

= a3 eq + b3, T independent!

T dependence: 1/ = K(eq) exp (- EA(eq) / kbT)

linear power law ?

Under preparation and validation on 14 months of RT

annealing!

Page 18: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

Outline

• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;

• (Very)-long term annealing studies for REM and LAAS RadFETs;

• Annealing parametrization for BPW34F;

• RadFET packaging studies and GEANT4 simulations;

• Integrated sensor carrier;

• Sensors delivery status.

Page 19: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 19

Development by

External Company

RadFET Packaging 1/4Commercial Packaging

(i.e. TO-5, DIP) cannot satisfy all Experiment

Requirements(dimensions/materials)

Development / study

in-house at CERN

~ 10 mm2 36-pin Ceramic carrier. Dies mounted at

PH/DT2 bond-lab.

– high integration level: up to 10 FETs;– customizable internal layout;– standard External Connectivity;– modularity needed!– radiation transport:

(calculated)

– X = 2-3 % X0;

– e- cut-off 550 KeV;– p cut-off 10 MeV;– transmission 20 KeV;– n attenuation 2-3 %;

Kapton Lid Aluminum Lid

GEANT4model

Page 20: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 20

RadFET Packaging 2/4 – Details on the geometry and used

physical models in Proc. CHEP06

paper number 308;

– run with monoenergetic protons at:

• 254 MeV experiments;

• 150 MeV prediction;

• 50 MeV prediction.

bareProtons are generated

randomly on a surface of 1.2 cm

x 1.2 cm

Beam incidence front/back with

respect the sensor packaging

packaging & lidpackaging

p

p

Page 21: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 21

RadFET Packaging 3/4

Front - No packagingFront - PackagingBack - PackagingFront - Packaging + 260 mm Al2O3

Front - Packaging + 520 m Al2O3

Front - Packaging + 2340 m Al2O3

Front - Packaging + 3000 m Al2O3

Front - Packaging + 4000 m Al2O3

Total energy deposit (MeV) per event in the four chips

Total energy deposit (MeV) per event in the four chips

GEANT4 vs. PSI – PIF Facility254 MeV p

ExperimentSimulation

254 MeV p

254 MeV p

50 MeV p

Same results for kapton, Al, FR4, …

… metallization has no effects …

.. low energies are the main

constraint!

254 MeV p

Predictive tool for other

particles/energies

Prediction

50 MeV p

Page 22: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 22

RadFET Packaging 4/4

– Proton results under extension (energy cut-off, geometry improved, etc..);

– Experimental results from /n reactor field Simulation ongoing …..

TRIGA Reactorat

JSI, Ljubljana, Slovenia

Results will be presented at the RADECS Workshop 2006, Athens, Sept. 27-29

Al2O3 seems to have the higher impact;

Issue: simulation of the background!

Page 23: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

Outline

• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;

• (Very)-long term annealing studies for REM and LAAS RadFETs;

• Annealing parametrization for BPW34F;

• RadFET packaging studies and GEANT4 simulations;

• Integrated sensor carrier;

• Sensors delivery status.

Page 24: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 24

Integrated sensor carrier

Front-Side

Back-SideINTEGRATED SENSOR CARRIERINTEGRATED SENSOR CARRIER(4 sensors, same readout method)(4 sensors, same readout method)

250 m PCB

RadFET package

Temperature probe

Selection pads

Soldering pads

CMRP diode

BPW34 diode

Connector plug 12 ways (11 channels + common GND)

Page 25: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 25

Integrated sensor carrier

INTEGRATED SENSOR INTEGRATED SENSOR CARRIERCARRIER

Tested during several Tested during several irradiation campaigns irradiation campaigns

in 2005in 2005

Page 26: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

Outline

• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;

• (Very)-long term annealing studies for REM and LAAS RadFETs;

• Annealing parametrization for BPW34F;

• RadFET packaging studies and GEANT4 simulations;

• Integrated sensor carrier;

• Sensors delivery status.

Page 27: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 27

Sensor delivery status

StatusThin Oxide

FETs

Thick Oxide FETs

High Sensitivity p-i-n

BPW34F p-i-n

Procured sensors

7/2006

393 (74%) LHC

477 (90%) OK!

120 100

160 DIL (irrad)

50 SMD (t.b.ir)

823

ALICE 6/2006 0 12 12

0

24

ATLAS 6/200620 (+20)

[ID]

20 [ID]50

[RoA]

20 [ID]50 [RoA]

20 [ID] 200

CMS 9/2005 0 0 ~ 10 ? 0 ~ 10

LHCb 2/2006 ~ 30 ~ 30 ~ 30 ~ 30 120

TOTEM

7/2006 ~ 24 [*] ~ 24 [*] ~ 24 [*] ~ 24 [*] ~ 96

Total ~ 450

[ID] = Inner Detector; [RoA] = Rest of Atlas; [*] = Estimation based on 24 full boards;

~ CMRP

LBSD Si-2

LBSDSi-1

Page 28: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 28

Conclusions

Verified response of all sensors at LDR in Mixed Hadron Field (MHF):

– Annealing of the BPW34 sensors has to be taken into account;

– LAAS can be probably used above Catalogue sensitivity range;

Annealing studies:

– LAAS: fully studied; a few % in standard operational range in MHF;

– REM: last details under study; ~ 7 % after several kGy in MHF !;

– BPW34: parametrization of the annealing behaviour ongoing;

RadFET Packaging: choice of the materials confirmed by preliminary tests;

detailed simulation studies are ongoing for validation and predictions of

behaviour in complicate radiation environments;

Integrated sensor PCB available together with all sensors that have been

characterized and procured.

Page 29: Status of the Active Sensors Federico Ravotti (CERN TS/LEA) Maurice Glaser, Michael Moll (CERN PH/DT2) Susanna Guatelli, Maria Grazia Pia (INFN, Genova

F. Ravotti RADMON W.G. - 11 July 2006 29

Sensor pricing 2006

Thin Oxide FETs

(0.25 m)

Ultra-thin Oxide FETs (0.13 m)

(ATLAS request)

Thick Oxide FETs

High Sensitivity

p-i-n

BPW34F p-i-n

393 (74%) LHC 477 (90%) OK!

150 120 100160 DIL50 SMD

373 left [*] 130 left [*] 38 left [*] 18 left [*]160 DIL left

20 SMD left [*]

40 CHF/die 23 CHF/die 70 CHF/die120

CHF/unit8 CHF/unit

[*] Procured Sensors – delivered to ATLAS – booked from ALICE = xxx left

Price Estimation for the sensor carrier PCB ~ 65 CHF including mounting of components.