Status of the Active Sensors
Federico Ravotti (CERN TS/LEA)
Maurice Glaser, Michael Moll (CERN PH/DT2)
Susanna Guatelli, Maria Grazia Pia (INFN, Genova – GEANT4 Team)
• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;
• (Very)-long term annealing studies for REM and LAAS RadFETs;
• Annealing parametrization for BPW34F;
• RadFET packaging studies and GEANT4 simulations;
• Integrated sensor carrier;
• Sensors delivery status.
Outline
• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;
• (Very)-long term annealing studies for REM and LAAS RadFETs;
• Annealing parametrization for BPW34F;
• RadFET packaging studies and GEANT4 simulations;
• Integrated sensor carrier;
• Sensors delivery status.
F. Ravotti RADMON W.G. - 11 July 2006 3
LDR Test Setup 1/3 • Mixed radiation field with Ch.
Hadrons generated by backscattered particles;
• Several intensities of the radiation field available (r,Z) focused on LDR;
• Facility operated under different beam conditions and shutdown periods;
• Variable temperature conditions.
[C. Leroy & P. Roy: UdeM-GPP-EXP-98-03, 1998]
24 GeV/c protons Z
r
(selected irradiation positions in PS-T7 area at different Z and r)
IRRAD1
IRRAD5
IRRAD3
F. Ravotti RADMON W.G. - 11 July 2006 4
LDR Test Setup 2/3
PRIMARY BEAM
SECONDARY BEAMdegraded primary beam
&Secondary particles
= measurement locations (5 positions)
PMI
Mag. QF003
r = 60 to 140Z
r
F. Ravotti RADMON W.G. - 11 July 2006 5
LDR Test Setup 3/3
F. Ravotti RADMON W.G. - 11 July 2006 6
Calibration curves
BPW34: 1/c = 9.1x109 cm2/mV 20
%
CMRP: 1/c = 1.7x108 cm2/mV 13 %
REM/LAAS: V = a x Db 10
%
a & b change with dose-
range
(a) – (e) different rates down to 3x1011 cm-
2h-1
BPW/CMRP: V = c x eq
sensitivity(/cm2)
sensitivity(/cm2)
F. Ravotti RADMON W.G. - 11 July 2006 7
First Irradiation RunRemnant dose-rate from north
branch~ 2 mGy/h PMI signal saturation
&LAAS absorbed > 10 Gy
Primary
Beam
Secondary Beam
T7 beam-line failure
Scaled beam intensity linearly fits the
CMRP signals down to the lower flux
(~5x108 neq/cm2/h)
CMRP super-linear &
BPW34 start to be
sensitive
LAASLAAS
CMRPCMRP
F. Ravotti RADMON W.G. - 11 July 2006 8
Measurements vs Simulations
In order to verify the scaling done with CMRP devices comparison with MC simulations;
eq has been converted into neutron fluence by means of k = 1.21 9.1 %
position= 5 cm
fluence = 16.2 %
Sim-A (r,Z) and Sim-B (r) differ in the number of
events and slightly in the T7 area layout and materials
composition of the modeled area.
Sim-B is expected to be more accurate!
Sim-ASim-B
F. Ravotti RADMON W.G. - 11 July 2006 9
Second Irradiation Run
Dose from REM is in agreement within 10 % with respect to PAD
&eq from BPW34 is in agreement within
20 % with respect to the particle fluence scaling
REM measurements compared with PAD (Alanine)
Dose deposition dominated by charged particles!
Primary
Beam
Secondary Beam
At all rates BPW needs to be corrected
against short- & long-term annealing
CMRP super-linear &
BPW34 start to be
sensitive
Scaling CMRP in agreement with MC
REREMM
BPW3BPW344
F. Ravotti RADMON W.G. - 11 July 2006 10
– REM devices are LET
insensitive up to 20 kGy;
– In the range 10-500 Gy the
“unbiased” LAAS response is
LET dependent (drop in Eox);
– Experimental results show
correlation between the
sensitivities ratio REM/LAAS
and changes in beam
conditions!
These Results will be presented at the RADECS Workshop 2006, Athens, Sept. 27-29
Changes in spectral composition
Second Irradiation Run
~ 30 Gy ~ 450 Gy
After 10 Gy the REM/LAAS sensitivity ratio could be used to detect variations in the spectral composition!
Outline
• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;
• (Very)-long term annealing studies for REM and LAAS RadFETs;
• Annealing parametrization for BPW34F;
• RadFET packaging studies and GEANT4 simulations;
• Integrated sensor carrier;
• Sensors delivery status.
F. Ravotti RADMON W.G. - 11 July 2006 12
Annealing RadFETs 1/3
LAAS
IRRAD6 () low TID (~ tens Gy) & eq < 1x1012
cm-2
IRRAD6 high TID & eq ~ 2x1013
cm-2
IRRAD1 pure 24 GeV/c protons
[G. Sarrabayrouse, CNRS-LAAS]
after 10 Gy at RT 1-2 % after 2000 h
Our measurement confirms isothermal annealing data of low TID exposed devices according to the recover of the oxide trapped charge! (TID effect)
this is what we need at the LHC … however …
… where this isochronal annealing behavior comes from ?
The prediction out of it doesn’t match the experimental isothermal annealing data we
got in IRRAD6 !
Isochronal annealing (6 min)
Isothermal annealing
Prediction from Isochrones
F. Ravotti RADMON W.G. - 11 July 2006 13
Annealing RadFETs 2/3
Can the additional degradation
at high doses be due to
displacement damage ?
Study submitted to APL (in press). Details on
preprint:
CERN-PH-EP\2006-21; CERN-TS-2006-002,
27/6/06
Vth=Vgs (iD)
“Threshold Voltage” ??
Vth = VT-(iD/)
Transistors
= (MOS channel
resistance)
RadFETs
1. T* from 24 GeV/c proton data;
2. Identification of Si-bulk
defects;
3. Determination of EAi, Ai, Bi;
4. Computation of defects;
dissociation: UF=iBie(-t)
24 GeV/p
F. Ravotti RADMON W.G. - 11 July 2006 14
Annealing RadFETs 3/3
REM Isothermal
annealing lower than 7 %
over 14 months after > 2
kGy in mixed field and with
temperature variations of
more than 15 ºC !The different behaviors
are probably
explainable in terms of
different Qot / Qit
contribution …
REM in IRRAD6
… hypothesis under verification with Isochronal Annealing
+“Winokur” method on 60Co irradiated samples at UM-II (M.
Bernard)
REM Isochronal annealing after irradiation in different fields Homogeneous
curves!
Outline
• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;
• (Very)-long term annealing studies for REM and LAAS RadFETs;
• Annealing parametrization for BPW34F;
• RadFET packaging studies and GEANT4 simulations;
• Integrated sensor carrier;
• Sensors delivery status.
F. Ravotti RADMON W.G. - 11 July 2006 16
Annealing BPW34 1/2
Series of BPW34 diodes irradiated and annealed in water bath
(packaging issue) at different temperatures Annealing
dependence (,T)
F. Ravotti RADMON W.G. - 11 July 2006 17
Annealing BPW34 2/2
Parametrization of the phenomenon (~M. Moll thesis for Si
detector diodes)
VF(t) = A - exp (-t/) – ln (t/t0), t0 = 1;
A = a1 eq + b1, T independent!
= a2 eq + b2, T independent!
= a3 eq + b3, T independent!
T dependence: 1/ = K(eq) exp (- EA(eq) / kbT)
linear power law ?
Under preparation and validation on 14 months of RT
annealing!
Outline
• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;
• (Very)-long term annealing studies for REM and LAAS RadFETs;
• Annealing parametrization for BPW34F;
• RadFET packaging studies and GEANT4 simulations;
• Integrated sensor carrier;
• Sensors delivery status.
F. Ravotti RADMON W.G. - 11 July 2006 19
Development by
External Company
RadFET Packaging 1/4Commercial Packaging
(i.e. TO-5, DIP) cannot satisfy all Experiment
Requirements(dimensions/materials)
Development / study
in-house at CERN
~ 10 mm2 36-pin Ceramic carrier. Dies mounted at
PH/DT2 bond-lab.
– high integration level: up to 10 FETs;– customizable internal layout;– standard External Connectivity;– modularity needed!– radiation transport:
(calculated)
– X = 2-3 % X0;
– e- cut-off 550 KeV;– p cut-off 10 MeV;– transmission 20 KeV;– n attenuation 2-3 %;
Kapton Lid Aluminum Lid
GEANT4model
F. Ravotti RADMON W.G. - 11 July 2006 20
RadFET Packaging 2/4 – Details on the geometry and used
physical models in Proc. CHEP06
paper number 308;
– run with monoenergetic protons at:
• 254 MeV experiments;
• 150 MeV prediction;
• 50 MeV prediction.
bareProtons are generated
randomly on a surface of 1.2 cm
x 1.2 cm
Beam incidence front/back with
respect the sensor packaging
packaging & lidpackaging
p
p
F. Ravotti RADMON W.G. - 11 July 2006 21
RadFET Packaging 3/4
Front - No packagingFront - PackagingBack - PackagingFront - Packaging + 260 mm Al2O3
Front - Packaging + 520 m Al2O3
Front - Packaging + 2340 m Al2O3
Front - Packaging + 3000 m Al2O3
Front - Packaging + 4000 m Al2O3
Total energy deposit (MeV) per event in the four chips
Total energy deposit (MeV) per event in the four chips
GEANT4 vs. PSI – PIF Facility254 MeV p
ExperimentSimulation
254 MeV p
254 MeV p
50 MeV p
Same results for kapton, Al, FR4, …
… metallization has no effects …
.. low energies are the main
constraint!
254 MeV p
Predictive tool for other
particles/energies
Prediction
50 MeV p
F. Ravotti RADMON W.G. - 11 July 2006 22
RadFET Packaging 4/4
– Proton results under extension (energy cut-off, geometry improved, etc..);
– Experimental results from /n reactor field Simulation ongoing …..
TRIGA Reactorat
JSI, Ljubljana, Slovenia
Results will be presented at the RADECS Workshop 2006, Athens, Sept. 27-29
Al2O3 seems to have the higher impact;
Issue: simulation of the background!
Outline
• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;
• (Very)-long term annealing studies for REM and LAAS RadFETs;
• Annealing parametrization for BPW34F;
• RadFET packaging studies and GEANT4 simulations;
• Integrated sensor carrier;
• Sensors delivery status.
F. Ravotti RADMON W.G. - 11 July 2006 24
Integrated sensor carrier
Front-Side
Back-SideINTEGRATED SENSOR CARRIERINTEGRATED SENSOR CARRIER(4 sensors, same readout method)(4 sensors, same readout method)
250 m PCB
RadFET package
Temperature probe
Selection pads
Soldering pads
CMRP diode
BPW34 diode
Connector plug 12 ways (11 channels + common GND)
F. Ravotti RADMON W.G. - 11 July 2006 25
Integrated sensor carrier
INTEGRATED SENSOR INTEGRATED SENSOR CARRIERCARRIER
Tested during several Tested during several irradiation campaigns irradiation campaigns
in 2005in 2005
Outline
• Low Dose Rate (LDR) response of Catalogue Sensors in hadron field;
• (Very)-long term annealing studies for REM and LAAS RadFETs;
• Annealing parametrization for BPW34F;
• RadFET packaging studies and GEANT4 simulations;
• Integrated sensor carrier;
• Sensors delivery status.
F. Ravotti RADMON W.G. - 11 July 2006 27
Sensor delivery status
StatusThin Oxide
FETs
Thick Oxide FETs
High Sensitivity p-i-n
BPW34F p-i-n
Procured sensors
7/2006
393 (74%) LHC
477 (90%) OK!
120 100
160 DIL (irrad)
50 SMD (t.b.ir)
823
ALICE 6/2006 0 12 12
0
24
ATLAS 6/200620 (+20)
[ID]
20 [ID]50
[RoA]
20 [ID]50 [RoA]
20 [ID] 200
CMS 9/2005 0 0 ~ 10 ? 0 ~ 10
LHCb 2/2006 ~ 30 ~ 30 ~ 30 ~ 30 120
TOTEM
7/2006 ~ 24 [*] ~ 24 [*] ~ 24 [*] ~ 24 [*] ~ 96
Total ~ 450
[ID] = Inner Detector; [RoA] = Rest of Atlas; [*] = Estimation based on 24 full boards;
~ CMRP
LBSD Si-2
LBSDSi-1
F. Ravotti RADMON W.G. - 11 July 2006 28
Conclusions
Verified response of all sensors at LDR in Mixed Hadron Field (MHF):
– Annealing of the BPW34 sensors has to be taken into account;
– LAAS can be probably used above Catalogue sensitivity range;
Annealing studies:
– LAAS: fully studied; a few % in standard operational range in MHF;
– REM: last details under study; ~ 7 % after several kGy in MHF !;
– BPW34: parametrization of the annealing behaviour ongoing;
RadFET Packaging: choice of the materials confirmed by preliminary tests;
detailed simulation studies are ongoing for validation and predictions of
behaviour in complicate radiation environments;
Integrated sensor PCB available together with all sensors that have been
characterized and procured.
F. Ravotti RADMON W.G. - 11 July 2006 29
Sensor pricing 2006
Thin Oxide FETs
(0.25 m)
Ultra-thin Oxide FETs (0.13 m)
(ATLAS request)
Thick Oxide FETs
High Sensitivity
p-i-n
BPW34F p-i-n
393 (74%) LHC 477 (90%) OK!
150 120 100160 DIL50 SMD
373 left [*] 130 left [*] 38 left [*] 18 left [*]160 DIL left
20 SMD left [*]
40 CHF/die 23 CHF/die 70 CHF/die120
CHF/unit8 CHF/unit
[*] Procured Sensors – delivered to ATLAS – booked from ALICE = xxx left
Price Estimation for the sensor carrier PCB ~ 65 CHF including mounting of components.