staff - ir detectors€¦ · vigo system has been providing infrared detectors to the market for...

- High speed,nanosecond timeconstants- High performance,room temp or TEcooled- PV, PC, PEM

Infrared Detectors Room Temperature and TE-Cooled

www.boselec.com [email protected] (617) 566 3821

91 Boylston Street, Brookline, MA 02445

1 Introduction ..........................................................................................

2 Infrared detectors .............................................................................2.1 Photoconductive detectors .................................................................2.2 Photovoltaic detectors .........................................................................2.3 Photovoltaic multijunction detectors ...................................................2.4 Photoelectromagnetic detectors .........................................................2.5 Quadrant geometry detectors ............................................................2.6 Detector packages ................................................................................2.7 IR Windows ..........................................................................................2.8 Detector code description ...................................................................

3 ........................................................................................

3.1 VIP ........................................................................................................3.2 IP ........................................................................................................3.3 QIP ....................................................................................................... 3.4 SIP ........................................................................................................ 3.5 FIP ........................................................................................................3.6 MIP ......................................................................................................3.7 PIP .......................................................................................................3.8 AIP .......................................................................................................

4 Accessories ............................................................................................4.1 PTCC-01 TEC controller .....................................................................4.24.3 DRB-2 base mounting system ..............................................................4.4 DH-2 detectors holder .........................................................................4.5 MH-1 modules holder ..........................................................................4.6 MHS-2 heatsink ...................................................................................4.7 EL-2 and EL-3 accessory lenses ............................................................4.8 Cables ..................................................................................................

5 Technical Information .....................................................................5.15.2 Detector parameters ...........................................................................5.35.45.5 Thermoelectric cooler controllers .......................................................5.6 Thermoelectric cooling ........................................................................5.7 Optical immersion ...............................................................................

6 Others .......................................................................................................6.16.2 Warranty ...............................................................................................

Table of contents

Boston Electronics www.boselec.com [email protected] (617)-566-3821

I am very pleased to introduce the new VIGO System product catalog for infrared (IR) detectors and dedicated electronics.

VIGO System has been providing infrared detectors to the market for many years; they have been developed and manufacturedby our highly specialized team of scientists, engineers, and technicians. VIGO IR detectors are used in various applications where reliability and the highest technical performance are required. Our products have unique performance and operating parametersthanks to our innovative approach, close coordination of research, development and production, and cooperation with renowned research centers around the world.

The last year was unique for VIGO System as we celebrated our 30th anniversary. We continue to grow, and develop new technologiesand new modern facilities. Our VIGO 2020 strategy is underway and will result in increased in production capacity and further improvement in our products’ affordability, performance and reliability.

When creating this catalog, we were driven to provide you with a clear presentation of the parameters of the products that are most important to you. The wide range of IR detector solutions manufactured at VIGO System have been presented to allow easy comparison and selection for your application.

partners worldwide, for skilled application support and product selection.

Regards,

President of VIGO System S.A.

Introduction


About


Infrared detectorsHgCdTe, photoconductive, photoelectromagnetic and photovoltaic detectors

temperature range without cryocooling. The detectors are characterized by

We are able to adapt to your needs and also create unique one- and

2

Infrared detectors

Photoconductive detectors PCPC series -

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@ peak, 20kHz

@ opt, 20kHz

PC

uncooled,

4 3.2×10 2.0×10 0.1 12000

20

6.0 2000

0.025×0.0250.05×0.05

0.1×0.10.2×0.2

0.25×0.250.5×0.5

1×12×23×34×4

BNC, no window

5 1.5×10 1.0×10 0.07 5000 6.0 1200

6 7.0×108 3.0×108 0.02 500 6.0 600

1.0×108 2.0×107 0.003 10 6.0 300

10.6 7 6 0.001 3 6.0 120

two-stage TE-cooled

4 3.2×1010 2.0×1010 0.65 30000 4.5 1500

TO8, TO66

wedged Al2O35 2.0×1010 1.0×1010 0.5 20000 4.5 1200

6 6.0×10 3.0×10 0.18 4000 4.5 800

wedged ZnSe

AR coated

8 4.5×108 0.025 40 3.8 400

10.6 4.0×108 1.4×108 0.01 10 3.8 300

12 1.0×108 4.5×107 0.005 3 2.5 200

13 4.0×107 2.3×107 0.002 2 2.5 150

three-stage

TE-cooled

1.5×10 1.0×10 0.075 60 3.0 400

wedged ZnSe

AR coated

10.6 4.5×108 2.5×108 0.02 20 2.25 300

12 1.8×108 7 0.01 5 2.25 300

13 1.2×108 6.0×107 0.007 4 2.25 300

TE-cooled

2.5×10 2.0×10 0.1 80 3.8 500

10.6 5.0×108 3.5×108 0.03 30 3.0 400

12 4.0×108 2.0×108 0.015 7 3.0 400

13 2.0×108 1.0×108 0.01 6 3.0 400

14 1.0×108 6.0×107 0.007 5 2.25 300

*) Other optimal wavelengths available upon request.**) Data sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

***) Other optical areas available upon request.****) Other windows available upon request.

1) Optical area available only for uncooled detectors

2.1 Photoconductive detectors


2

Infrared detectors

Spectral characteristics*)

PC PC-2TE

1E+06

1E+07

1E+08

1E+09

1E+10

1 2 3 4 5 6 7 8 9 10 11 12 13

9 m

6 m5 m

4 m

D* [

c1/

2-1

m·H

z·W

]

[ m]

10.6 m

1E+07

1E+08

1E+09

1E+10

1E+11

1 2 3 4 5 6 7 8 9 10 11 12 13

9 m

6 m

5 m4 m

[ m]

10.6 m

12 m

13 m

D* [

c1/

2-1

m·H

z·W

]

PC-3TE PC-4TE

1E+07

1E+08

1E+09

1E+10

1 2 3 4 5 6 7 8 9 10 11 12 13

9 m

[ m]

10.6 m

12 m

13 m

D* [

c1/

2-1

m·H

z·W

]

1E+07

1E+08

1E+09

1E+10

1 2 3 4 5 6 7 8 9 10 11 12 13 14

9 m

[ m]

10.6 m

12 m

13 m

D* [

c1/

2-1

m·H

z·W

]

14 m

Spectral characteristics of individual detectors may vary from those shown on the chart.


2

Infrared detectors

Photoconductive detectors optically immersed PCIPCI series -

opt -De

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or ty

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tem

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T

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*)

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***)

Pack

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peak, 20kHz

opt, 20kHz

PCI

uncooled, ~300

4 10 9

BNC, TO39

9 9

9 9

9

7

(2TE), ~230

4 10 10

Al2O310 10

10 10

ZnSe AR coated

9 9 9

9 9

12 9

13

stage

(3TE), ~210

9 10 9

ZnSe AR coated

9 9

12 9

13

(4TE),

9 10 10

ZnSe AR coated

9 9

12 9 9

13 9 9

14



. 1) Optical area available only for uncooled detectors

2.1 Photoconductive detectors


2

Infrared detectors


PCI PCI-2TE

1E+07

1E+08

1E+09

1E+10

1 2 3 4 5 6 7 8 9 10 11 12 13

9 m

6 m

5 m

4 m

D* [

c1/

2-1

m·H

z·W

]

[ m]

10.6 m

1E+07

1E+08

1E+09

1E+10

1E+11

1 2 3 4 5 6 7 8 9 10 11 12 13

9 m

6 m

5 m4 m

[ m]

10.6 m12 m

13 m

D* [

c1/

2-1

m·H

z·W

]

PCI-3TE PCI-4TE

1E+08

1E+09

1E+10

1 2 3 4 5 6 7 8 9 10 11 12 13

9 m

[ m]

10.6 m

12 m

13 m

D* [

c1/

2-1

m·H

z·W

]

1E+08

1E+09

1E+10

1E+11

1 2 3 4 5 6 7 8 9 10 11 12 13 14

9 m

[ m]

10.6 m

12 m

13 m

D* [

c1/

2-1

m·H

z·W

]

14 m

*)


2

Infrared detectors

Photovoltaic detectors PVPV series

opt

-ce processing.

Det

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Coo

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T

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Opt

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Detectivity

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Cur

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are

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Pack

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@ peak @ opt

PV

uncooled,

3 8.0×10 6.5×10 0.5 350 1

0.710.05×0.05

0.1×0.1 no window

3.4 7.0×10 5.0×10 0.8 260 0.5

4 5.0×10 3.0×10 1 150 0.1

5 2.0×10 1.0×10 1 120 0.01

6 1.0×10 5.0×108 1 80 0.002

two-stage TE-cooled

3 1.0×1011 7.0×1010 0.5 280 150

0.87

0.05×0.05 0.1×0.1

TO8, TO66

wedged Al2O3

3.4 6.0×1010 4.0×1010 0.8 200 3

4 4.0×1010 3.0×1010 1.0 100 2

5 1.5×1010 1.3 80 0.1

6 5.0×10 2.0×10 1.5 50 0.02

wedged ZnSe AR coated

8 4.0×108 2.0×108 0.830

0.00020.025×0.025

0.05×0.05

45 0.1×0.1

10.6 2.0×108 1.0×108 0.4 10 0.0001 0.025×0.0250.05×0.05

three-stage TE-cooled

3 3.0×1011 1.0×1011 0.5 280 240

0.05×0.05

0.1×0.1

wedged Al2O3

3.4 10 7.0×1010 0.8 200 15

4 6.0×1010 4.0×1010 1.0 100 6

5 4.0×1010 1.0×1010 1.3 80 0.3

6 7.0×10 4.0×10 1.5 50 0.025


8 5.0×108 3.0×108 1.030

0.00040.025×0.025

0.05×0.05

45 0.1×0.1

10.6 3.0×108 1.5×108 0.7 10 0.0002 0.025×0.0250.05×0.05

TE-cooled

3 3.0×1011 1.5×1011 0.5 280 3000.05×0.05

0.1×0.1

wedged Al2O3

3.4 2.0×1011 1.0×1011 0.8 200 20

4 1.0×1011 6.0×1010 1.0 100 8

5 4.0×1010 1.5×1010 1.3 80 0.4

6 5.0×10 1.5 50 0.03 0.05×0.050.1×0.1


8 5.0×108 4.0×108 1.530

0.0006

0.025×0.025

0.05×0.05

45 0.1×0.1

10.6 4.0×108 2.0×1080.7 10

0.0005

0.025×0.025

0.05×0.05

0.5 25 0.1×0.1




2.2. Photovoltaic detectors


2

Infrared detectors


PV PV-2TE

1E+08

1E+09

1E+10

2 3 4 5 6 7

6 m

5 m

4 m

3.4 m3 m

D* [

c1/

2-1

m·H

z·W

]

[ m]1E+07

1E+08

1E+09

1E+10

1E+11

1 2 3 4 5 6 7 8 9 10 11 12 13

D* [

c1/

2-1

m·H

z·W

]

[ m]

10.6 m

8 m

6 m

5 m

4 m3.4 m

3 m

PV-3TE PV-4TE

1E+07

1E+08

1E+09

1E+10

1E+11

1E+12

1 2 3 4 5 6 7 8 9 10 11 12 13

D* [

c1/

2-1

m·H

z·W

]

[ m]

10.6 m8 m

6 m

5 m4 m

3.4 m

3 m

1E+07

1E+08

1E+09

1E+10

1E+11

1E+12

1 2 3 4 5 6 7 8 9 10 11 12 13

D* [

c1/

2-1

m·H

z·W

]

[ m]

10.6 m8 m

6 m

5 m

4 m3.4 m

3 m

*)


2

Infrared detectors

Photovoltaic detectors optically immersed PVIPVI series

opt -

-

Det

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Coo

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Opt

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Detectivity

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are

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Opt

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are

a

Pack

age

Win

dow

@ peak

PVI

uncooled,

3 5.0×1010 5.0×1010 0.5 350 100

0.5×0.5 1×1

BNC,

no w

indo

w3.4 5.0×1010 4.5×1010 0.8 260 50

4 3.0×1010 2.0×1010 1 150 6

5 1.5×1010 1 120 1

6 8.0×10 4.0×10 1 80 0.2

two-stage TE-cooled

3 8.0×1011 5.5×1011 0.5 280 15000

0.5×0.5 1×1

TO8, TO66

wedged Al2O3

3.4 6.0×1011 3.0×1011 0.8 200 300

4 3.0×1011 2.0×1011 1.0 100 200

5 1.0×1011 6.0×1010 1.3 80 10

6 5.0×1010 2.0×1010 1.5 50 2wedged

ZnSe

AR coated

8 4.0×10 2.0×10 0.830

0.020.3×0.3 0.5×0.5

45 1×1

10.6 2.0×10 1.0×10 0.4 10 0.01 0.3×0.3 0.5×0.5


3 11 7.0×1011 0.5 280 24000

0.5×0.5 1×1

wedged Al2O3

3.4 7.0×1011 5.0×1011 0.8 200 1500

4 5.0×1011 3.0×1011 1.0 100 600

5 1.0×1011 8.0×1010 1.3 80 30

6 6.0×1010 3.0×1010 1.5 50 2.5wedged

ZnSe

AR coated

8 5.0×10 3.0×10 1.030

0.040.3×0.3 0.5×0.5

45 1×1

10.6 3.0×10 1.5×10 0.7 10 0.02 0.3×0.3 0.5×0.5

TE-cooled

3 1.0×1012 8.0×1011 0.5 280 30000

0.5×0.5 1×1

wedged Al2O3

3.4 8.0×1011 7.0×1011 0.8 200 2000

4 6.0×1011 4.0×1011 1.0 100 800

5 3.0×1011 1.0×1011 1.3 80 40

6 6.0×1010 4.0×1010 1.5 50 3

wedged ZnSe

AR coated

8 5.0×10 4.0×10 1.530

0.060.3×0.3 0.5×0.5

45 1×1

10.6 4.0×10 2.0×100.7 10

0.050.3×0.3 0.5×0.5

0.5 25 1×1




2.2. Photovoltaic detectors


2

Infrared detectors


PVI PVI-2TE

1E+08

1E+09

1E+10

1E+11

2 3 4 5 6 7

6 m

5 m

4 m

3.4 m3 m

D* [

c1/

2-1

m·H

z·W

]

[ m]1E+08

1E+09

1E+10

1E+11

1E+12

1 2 3 4 5 6 7 8 9 10 11 12 13

D* [

c1/

2-1

m·H

z·W

]

[ m]

10.6 m

8 m

6 m

5 m

4 m3.4 m

3 m

PVI-3TE PVI-4TE

1E+08

1E+09

1E+10

1E+11

1E+12

1 2 3 4 5 6 7 8 9 10 11 12 13

D* [

c1/

2-1

m·H

z·W

]

[ m]

10.6 m8 m

6 m5 m

4 m3.4 m

3 m

1E+08

1E+09

1E+10

1E+11

1E+12

1 2 3 4 5 6 7 8 9 10 11 12 13

D* [

c1/

2-1

m·H

z·W

]

[ m]

10.6 m8 m

6 m

5 m4 m

3.4 m3 m

*)


2

Infrared detectors

Photovoltaic multiple junction detectors PVMPVM series

Dete

ctor

type

tem

pera

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T

K

*)

opt

m

**)

cm HzDW

leng

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Pack

age **

**)

peak opt

PVM

uncooled, ~300

7

1)

BNC, TO397 7

(2TE), ~230

AR coated

*) Other optimal wavelengths available upon request. **) Data sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

***) Other optical area available upon request. ****) Other windows available upon request.

1) Optical area available only for uncooled detectors.

2.3. Photovoltaic multiple junction detectors

PVMI series

Det

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@ peak @ opt

PVMI

uncooled, 8 6.0×108 3.0×108 0.04 4 50 to 300

1.62

1×1 2×2

BNC, no window10.6 2.0×108 1.0×108 0.01 1.5 20 to 150

two-stage TE-cooled

8 2.5×10 2.0×10 0.10 4 150 to 1000

TO8, TO66wedged

ZnSe AR coated

10.6 1.5×10 1.0×10 0.05 3


8 4.0×10 3.0×10 0.15 4 200 to 1500

10.6 2.0×10 1.5×10 0.10 3 100 to 400

TE-cooled

8 8.0×10 6.0×10 0.20 4 500 to 2000

10.6 2.5×10 2.0×10 0.15 3 120 to 500

*) **)

***) ****)

Photovoltaic detectors optically immersed PVMI


2

Infrared detectors

PVM PVM-2TE

1E+07

1E+08

1E+09

2 3 4 5 6 7 8 9 10 11

8 m

[ m]

10.6 m

D* [c

1/2

-1m

·Hz

·W]

1E+07

1E+08

1E+09

2 3 4 5 6 7 8 9 10 11

8 m

[ m]

10.6 mD* [c

1/2

-1m

·Hz

·W]

PVMI PVMI-2TE

1E+08

1E+09

2 3 4 5 6 7 8 9 10 11

D* [

c1/

2-1

m·H

z·W

]

[ m]

8 m

10.6 m

0E+00

1E+09

2E+09

3E+09

1 2 3 4 5 6 7 8 9 10 11 12 13

[ m]

D* [

c1/

2-1

m·H

z·W

]

8 m

10.6 m

PVMI-3TE PVMI-4TE

0E+00

1E+09

2E+09

3E+09

4E+09

1 2 3 4 5 6 7 8 9 10 11 12 13

[ m]

D* [

c1/

2-1

m·H

z·W

] 8 m

10.6 m

0E+00

1E+09

2E+09

3E+09

4E+09

5E+09

6E+09

7E+09

8E+09

1 2 3 4 5 6 7 8 9 10 11 12 13

[ m]

D* [

c1/

2-1

m·H

z·W

] 8 m

10.6 m

*)



2

Infrared detectors2.4. Photoelectromagnetic detectors

Photoelectromagnetic detectors PEM PEM series

Det

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Coo

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T

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Opt

imal

wav

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opt

m


W

iA

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RL

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Tim

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are

a***)

Pack

age

Win

dow

****

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PEM uncooled, 10.6 1.6×107 1.0×107 0.002 1.2 40 to 100 1×1 2×2

PEM-SMA,

PEM-TO8

wedged ZnSe

AR coated

*) **)

***) ****)

Photoelectromangetic detectors optically immersed PEMIPEMI series -

-

to 11 m spectral range.

Det

ecto

r ty

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Coo

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Opt

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wav

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opt

m


W

Cur

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Pack

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@ peak @ opt

PEMI uncooled, 10.6 1.6×108 1.0×108 0.01 1.2 40 to 100 1×1 2×2

PEM-SMA,

PEM-TO8

wedged ZnSe

AR coated

*) **)


2

Infrared detectors

PEM

1E+06

1E+07

1E+08

2 3 4 5 6 7 8 9 10 11

D* [

c1/

2-1

m·H

z·W

]

[ m]

10.6 m

PEMI

1E+06

1E+07

1E+08

1E+09

2 3 4 5 6 7 8 9 10 11

D* [

c1/

2-1

m·H

z·W

]

[ m]

10.6 m

*)



2

Infrared detectors2.5. Quadrant geometry detectors

Quadrant geometry detectors PCQ, PVMQ, PVQPCQ series

Det

ecto

r ty

pe

Coo

ling,

ope

ratin

g

tem

pera

ture

T

K

Opt

imal

wav

elen

gth

opt

m

Detectivity cm HzD

W

Cur

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res

pons

ivity

leng

th

prod

uct @

opt

iA

mm

RL

W

Tim

e co

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cf

kHz

Bias

vol

tage

leng

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atio

bV

VL

mm

Shee

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ptan

ce a

ngle

Dist

ance

bet

wee

n el

emen

ts

Pack

age

Win

dow

@pe

ak, 2

0kH

z

@op

t, 20

kHz

PCQ uncooled, 10.6

7 6

0.001 5 20 6.0 240

0.05×0.05 0.1×0.1 0.2×0.2

0.25×0.25 0.5×0.5

1×1 2×2 3×3 4×4

4

20 TO8

no w

indo

w

*) **)

PVMQ series

Det

ecto

r ty

pe

Coo

ling,

ope

ratin

g te

mpe

ratu

re

TK

Opt

imal

wav

elen

gth

opt

m

Detectivity cm HzD

W

Cur

rent

res

pons

ivity

leng

th

prod

uct @

opt

iA

mm

RL

W

Tim

e co

nsta

nt

ns

Resis

tanc

e R

Acce

ptan

ce a

ngle

el

emen

t ***)

Dist

ance

bet

wee

n el

emen

ts

m

Pack

age

Win

dow

@pe

ak

@op

t

PVM

Q uncooled, 10.6

2.0×

107

1.0×

107

0.002 1.5 20 to 150

1×1 2×2 200 TO8

no w

indo

w

*) **)

PVQ series beam positioning.

Det

ecto

r ty

pe

Coo

ling,

ope

ratin

g te

mpe

ratu

re

TK

Opt

imal

wav

elen

gth*)

opt

m


W

Cur

rent

res

pons

ivity

@op

t

iA

RW

Tim

e co

nsta

nt

ns

Resis

tanc

e op

tical

are

a pr

oduc

t R

A

Acce

ptan

ce a

ngle

el

emen

t ***)

Dist

ance

bet

wee

n el

emen

ts

m

Pack

age

Win

dow

@pe

ak

@op

t

PVQ uncooled, 5

2.0×

10

1.0×

10

1 120 0.01 0.1×0.1 0.2×0.2

4 30 TO8

no w

indo

w

*) Other optimal wavelengths available upon request. **) Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

m


2

Infrared detectors

PCQ

1E+06

1E+07

1E+08

1 2 3 4 5 6 7 8 9 10 11 12 13

D* [

c1/

2-1

m·H

z·W

]

[ m]

10.6 m

PVMQ

1E+07

1E+08

2 3 4 5 6 7 8 9 10 11

[ m]

10.6 m

D* [

c1/

2-1

m·H

z·W

]

PVQ

1E+08

1E+09

1E+10

2 3 4 5 6

5 mD* [

c1/

2-1

m·H

z·W

]

[ m]

*)


2

Infrared detectors2.6. Detector packages

Dimensions [mm]

Lens shape Hyperhemisphere Hemisphere Flat

[mm x mm]

R [mm]

A [mm] 0 0

B [mm]

FOV [°], =4mm ~90 ~90

BNC detector package

Top view

Dimensions [mm]


[mm x mm]

R [mm]

A [mm]

B [mm]

FOV [°], =4mm ~102

FOV [°], =4mm ~124

TO39 detector package

Bottom view

Pin number Function

signal

3 chassis ground


2

Infrared detectors

PEM detector package (with SMA connector)

Top view

Dimensions [mm]


Optical area [mm x mm] 0.5×0.5 1×1 2×2 0.5×0.5 - 2×2 0.01×0.01 - 4×4

R [mm] 0.5 0.8 1.25 0.5 - 1.6

A [mm] 8.4±0.2 10.7±0.2

FOV [°], =4mm

PEM detector package (with TO8 base)

Bottom view

Pin number Function

1, 3 signal

11 chassis ground

2, 4, 5, 6, 7, 8, not used

Dimensions [mm]



R [mm] 0.5 0.8 1.25 0.5-1.25

A [mm] 5.65±0.3 4.75±0.3 3.35±0.3 7.15±0.3 7.15±0.3

FOV [°]


2

Infrared detectors

-kages are hermetically sealed with IR windows.


Bottom view

Pin number Function

1, 3 signal

thermistor

TE cooler supply

11 chassis ground

4, 5, 6, 10, 12, not used

Dimensions [mm]



R [mm] 0.5 0.8 1.25 0.5 - 1.25

A [mm] 4.1±0.3 3.2±0.3 1.85±0.3 5.6±0.3 5.6±0.3

B [mm] 5.6±0.3 5.6±0.3 5.6±0.3 5.6±0 .3 5.6±0.3

C [mm] 11±0.3 11±0.3 11±0.3 11±0.3 11±0.3

FOV [°]



R [mm] 0.5 0.8 1.25 0.5 - 1.6

A [mm] 5.7±0.35 4.8±0.35 3.45±0.35 7.2±0.35 7.2±0.35

B [mm] 7.2±0.35 7.2±0.35 7.2±0.35 7.2±0.35 7.2±0.35

C [mm] 12.4±0.3 12.4±0.3 12.4±0.3 12.4±0.3 12.4±0.3

FOV [°]


Optical area[mm x mm] 0.5×0.5 1×1 2×2 0.5×0.5 - 2×2 0.01×0.01 - 4×4

R [mm] 0.5 0.8 1.25 0.5 - 1.6

A [mm] 7.3±0.4 6.4±0.4 5.0±0.4 8.8±0.4 8.8±0.4

B [mm] 8.8±0.4 8.8±0.4 8.8±0.4 8.8±0.4 8.8±0.4

C [mm] 14±0.3 14±0.3 14±0.3 14±0.3 14±0.3

FOV [°]

2.6. Detector packages


2

Infrared detectors


Bottom view

Pin number Function

7, 8 signal

5, 6 thermistor

TE cooler supply

11 chassis ground

2, 3, 4 not used

Dimensions [mm]



R [mm] 0.5 0.8 1.25 0.5 - 1.6

A [mm] 5.1±0.3 4.2±0.3 6.6±0.3 6.6±0.3

B [mm] 6.6±0.3 6.6±0.3 6.6±0.3 6.6±0.3 6.6±0.3

C [mm] 12.1±0.3 12.1±0.3 12.1±0.3 12.1±0.3 12.1±0.3

FOV [°]



R [mm] 0.5 0.8 1.25 0.5 - 1.6

A [mm] 7.2±0.35 6.3±0.35 5±0.35 8.7±0.35 8.7±0.35

B [mm] 8.7±0.35 8.7±0.35 8.7±0.35 8.7±0.35 8.7±0.35

C [mm] 14±0.3 14±0.3 14±0.3 14±0.3 14±0.3

FOV [°]



R [mm] 0.5 0.8 1.25 0.5 - 1.6

A [mm] 8.3±0.4 7.4±0.4 6.1±0.4

B [mm]

C [mm] 15.2±0.3 15.2±0.3 15.2±0.3 15.2±0.3 15.2±0.3

FOV [°]


2

Infrared detectors2.6. Detector packages

IR windows

3° wedged Al2O3

Available windows options

Material Hardness AR coating Symbol

BaF2 82 wedged no wBaF2

Si silicon 1100

wedged yes wSiAR

planar yes pSiAR

ZnSe zinc selenide 120

wedged yes wZnSeARplanar yes pZnSeAR

Al2O3 sapphire 1370

wedgedyes wAl2O3ARno wAl2O3

planaryes pAl2O3ARno pAl2O3

Ge germanium 780

wedged yes wGeARplanar yes pGeAR


2

Infrared detectors

Detector code

Detector package Window FOVCooling Optimal wavelength Optical area


3

typeMain

featureDetector package

Detector type

Detector cooling

Radiator, cooling,

TEC controlling

Input noise

density

Input noise current density frequency

VIP standalone BNC PV, PVI, PVM, PVMI uncooled not

needed1) 1) DC, 10, 100, 1k, 10k

IP TO39

PC, PCI,

PV, PVI, PVM, PVMI

uncooled not needed

1) 1) DC, 10, 100, 1k, 10k

QIP PCQ, PVQ, PVMQ uncooled

on board radiator and TEC control

ler, fan

1) 1) DC, 10, 100, 1k, 10k

SIP OEM

TO39 PC, PCI,

PV, PVI, PVM, PVMI

uncooled

2TE, 3TE, 4TE

external heatsink needed

1) 1) DC, 10, 100, 1k, 10k

FIP

PC, PCI,

PV, PVI, PVM, PVMI

2TE, 3TE, 4TE on board radiator, fan 1k, 10k

MIP standard

PC, PCI,

PV, PVI, PVM, PVMI

2TE, 3TE, 4TE on board radiator, fan

1) 1) DC, 10, 100, 1k, 10k

PIP programmable

PC, PCI,

PV, PVI, PVM, PVMI

2TE, 3TE, 4TE on board radiator, fan

DC/10

AIP on board TEC controller

PC, PCI,

PV, PVI, PVM, PVMI

2TE, 3TE, 4TE

on board radiator and TEC control-

ler, fan

1) 1) DC, 10, 100, 1k, 10k


3

frequency Transimpedance Output

impedance

Output Output supply supply

current Supply connector Signal output

10M, 20M5)

6)9)

12)

13)DB9 BNC

10M, 100M, 200M5)

6)9) MMCX

10M, 100M5)

6)9) 4×MCX

tunable4) up to 5)

6)9)

12)

13)MMCX

1G 3 +100 LEMOSMA ( DC

monitor as an )

5)

7)

8)

9)

12)

13)LEMO SMA

digitally adjustable

2)

3)

9

(DC) LEMO SMA

5)

6)9)

10)

+1211)

DC monitor as an

)


3

non-biased IR detectors in BNC packages.

Code description

VIP - DC - 100k - S VIGO preamplifier type

Low cut-off frequency flo [Hz]:DC101001k10k

High cut-off frequency f [Hz]:100k300k1M5M10M20M

hi

Version:S - standard - with DB9 supply connector

Dimensions [mm]

Pin number Symbol Function

1 N.C. not connected


3 GND power ground



6 sup



sup

DB9 connector male

3.1 VIP

see the preamplifier specification table for additional information


3

-

Code description

Low cut-off frequency f [Hz]:DC101001k10k

lo

High cut-off frequency f [Hz]:100k300k1M5M10M20M50M100M200M

hi

Version:S - standard - with packageOEM - without package

10kIPVIGO preamplifier type

200M OEM

Dimensions [mm]

IP OEM IP-S


1 -Vsup

2 GND power ground

3 sup

3.2. IP



3

3.3. QIP

-ased, uncooled, quadrant geometry detectors in TO8 package. QIP provides broad bandwidth up to 100MHz.

Code description

QIP - 10k - 100Mtype


lo High cut-off frequency f [Hz]:100k300k1M5M10M100M

hi

Dimensions [mm]

Power supply connector - DC Jack connector

Type Voltage [V] Pin diamater

Ø 2.5

5 Ø 2.1



3

3.4. SIP

--

Code description

High cut-off frequency f [Hz]:100k300k1M5M10M100M250M

hiVIGO preamplifier type


lo

Package:TO8 - with cooled detectors in TO8 packageTO39 - with uncooled detectors in TO39 package

Gain adjustment:*)G - with gain adjustment

NG - without gain adjustment

Dimensions [mm]

SIP-TO8

Power supply and TEC control connector - AMP2x4 connector male


1 sup

2*)

3**)

4*)

5 GND power ground

6

7 sup

8 -ted

*) lo hi

**) lo hi



3

3.5. FIP

Code description

FIP - 1k - 1G - F - M4 - DVIGO preamplifier type

Low cut-off frequency f [Hz]:1k10k

lo

High cut-off frequency fhi [Hz]:1G

Package:F - with fan

Mounting hole:M4 - M4 mounting holeM8 - M8x1 mounting hole

DC monitor:D - with DC monitorND - without DC monitor

Dimensions [mm]


1

2 TH2

3

4 Vsup power supply input (–)5 GND power ground

6 sup

7

8 TH1

DATA data pin



3

intended to operation with either biased or non-biased detectors.

-

Code description

VIGOpreamplifiertypeMIP

Lowcut-of f frequencyf [Hz]:lo

DC101001k10k

ffrequencyfHighcut-of [Hz]:hi

100k300k1M10M20M50M100M250M

Package:F - withfan

Mountinghole:M4 - M4 mounting holeM8 - M8x1 mounting hole

MIP - 1k - 100M - F - M4

Dimensions [mm]


1

2 TH2

3

4 Vsup power supply input (–)5 GND power ground

6 sup

7

8 TH1

DATA data pin

3.6. MIP



3

the power is on.

For proper operation PTCC-01 TEC controller is required.Code description

PIP - DC - 200M - F - M4VIGO preamplifier type

Low cut-off frequency fDC/10 - configurable by software

High cut-off frequency f [Hz]:20M200M

hi

Package:F - with fan

Mounting hole:M4 - M4 mounting holeM8 - M8x1 mounting hole

[Hz]:lo

Dimensions [mm]


1 FAN+ FAN (+)

2 TH2 thermistor output (2)

3 TEC– TEC supply input (–)

4 Vsup power supply input (–)

5 GND power ground

6 +Vsup power supply input (+)

7 TEC+ TEC supply input (+)

8 TH1 thermistor output (1)

9 DATA data pin

3.7. PIP


Selectable bandwidths: 150kHz, 1.5 MHz, 20MHz or 1.5MHz, 15 MHz, 200 MHz


3

supply what makes AIP very convenient in use and decreases power consumption.

Code description

Dimensions [mm]

Power supply connector - DC Jack connector

Type Voltage [V] Pin diamater

Ø 2.5

5 Ø 2.1

3.7. AIP



AccessoriesProgrammable, precision and low noise thermoelectric cooler controllers, power supplies as well as mechanical and optical accessories provide an ideal complement for any type of VIGO detection module.

4

Accessories

PTCC-01 – Programmable “smart” TEC controller

PTCC-01 is the programmable, precision, low noise, thermoelectric cooler controller, intended to operate with VIGO IR

PTCC-01-OEM

TE C controller with built-in power supply, without housing

PTCC-01-BAS

TEC controller with built-in power supply, encapsulated in a small package

status LED indicator

PTCC-01-ADV

TEC controller with built-in power supply, encapsulated in a small package

4.1 PTCC-01 TEC controller


4

Accessories

Parameter Value

Temperature stability [K] det det

Temperature readout stability [mK] det det

Detector temperature settling time [s]det det det det det det

Maximum TEC current [A]

Output voltage range [V] min 3, max 14.5

Output current of the built-in power supply [mA]

Power supply voltage Vsup [V]

Power supply current Isup [mA] 500 TEC=0.45A, UTEC

Series resistance of the connecting cable [m ]

1000

Storage temperature [°C]

Ambient temperature [°C]

Relative humidity [%]

Code description

PTCC-01-BASVIGO thermoelectric cooler controller Version:

OEM - without packageBAS - Basic - with packageADV - Advanced - with package, function buttons and LCD

Dimensions [mm]


4

Accessories


1

2

3 GND power ground

4 TH1

5 TH2

6 sup

7

FAN and programmable preamp

internal logic auxiliary supply

8 DATA bidirectional data port

sup

metal cover GND-SH shield


1 TEC controller supply input

2 TECC GND

TEC controller power ground


1

2

3 GND power ground

4 TH1

5 TH2

6 sup

7 FAN and PIP preamp internal logic auxiliary supply

8 DATA bidirectional data port

sup

10 GND-SH shield


1 error indicator

2 LEDtemperature control loop lock

indicator

3 module power supply on indicator

4 3.3 V auxiliary supply

5

6 GND

7

4.1 PTCC-01 TEC controller


4

Accessories

Parameter Vaule

Power supply voltage Vsup [V AC]

Output voltage [V DC]

Output current [mA] ±100

Weight [g] 100

Code description

PPS-03-1509 - ±9V15 - ±15V

Dimensions [mm]




3 GND power ground



6 sup



sup

metal cover GND-SH shield


4

Accessories

BNC packages.

Base plate BP

Mounting post MP-100

Post holder PH-100

Features

Stable construction

Adjustable height

Durable elements

Compatible with M6 optical breadboards

MP mounting post

MP-100 models are available.

Model Weight [g] Dimension A [mm]MP-50 55 50

MP-75 85 75

MP-100 115 100

4.3 DRB-2 base mounting system


4

Accessories

PH post holder

PH-100 models are available.

Post holder PH

Model Weight [g] Dimension A [mm]PH-50 35 50

PH-75 50 75

PH-100 60 100

BP base plate

photo to be updated

STA-8x1-4 special thread adapter


4

Accessories4.4. DH-2 detectors holder / 4.5. MH-1 modules holder / 4.6. MHS-2 heatsink

packages. It is compatible with DRB-2 mounting system.

mounting system.

-


4

Accessories 4.7. EL-2 and EL-3 accessory lenses

EL accessory lens with mount


4

Accessories

AC adaptor

Signal output cables

BNC-BNC

SMA-BNC SMA-SMA

Power supply and TEC control cables

4.8. Cables


4

Accessories

Power supply cables

photo to be updated

photo to be updated


Technical Information

5


Hg1-xCdxTe

ranges.

Photoconductors (PC)Photoconductive detectors based on the photoconductive

-conductor active region decreasing its resistance. The resistan-ce change is sensed as a current change by applying a constant

test report and depen ds on the detector size, operating tem-perature and spectral characteristics.

Photovoltaic detectors (PV, PVM)-

PV PVM -tions. Absorbed photons produce electron-hole pairs, resulting in external photo current. Reverse bias voltage may be applied

more vulnerable to electrostatic discharges than photoconduc-tors.

Photoelectromagnetic detectors (PEM)Photovoltaic detectors based on the photoelectromagnetic

Detector formats

5.2 Detector parameters

Current responsivity

PVM and PEM detectors.

Current responsivity length produc

detector L2 and proportional to voltage bias Vb the normalized responsivity can be expressed as the current responsivity length product divided by bias voltage length ratio

Dark current

receiving any light. It may increase as the temperature rises.

Maximum bias voltage

Bias voltage length ratio Length-normalized photoconductor bias current. Typical photoconductor’s bias current should be increased proportionally to the distance between the contacts .

.

Noise power

, where

and means averaging over time.

Noise power density

Noise current

,where means momentary current noiseand means averaging over time.

Noise current density

1/f noise corner frequency Flicker noise or 1

power is proportional to where . Below the corner

For

Normalized detectivity


5


normalized to radiant power, a detector optical area and a bandwidth. The higher value = the better detector.

Optical area

Detector capacitance

Parallel to detector resistance, capacitance in the detector structure.

Spectral response

data sheets it is presented as or .. It canbe characterized by cuton wavelength ,wavelength , optimum wavelength and peakwavelength .

Cut-on wavelength , , is the shorter wavelength at which a detector

Cut-off wavelength is the longer wavelength at which a detector

Optimum wavelength

Peak wavelength

Resistance at 0 bias voltage optical area product

resistance decreases proportionally to their area increasing.

.

In contrast, the PC, PEM, PVM detectors are characterized by sheet resistance .

Series resistance Parasitic resistance in photodiodes. Its contribution to the

and near room operating temperatures diodes, especially with large optical area.

Sheet resistance The normalized resistance expressed in . It is used to

square active area.

Time constant Typically, detector time response can be described by one pole

:

Operating temperature T

Acceptance angle Acceptance angle is the maximum angle at which incoming

a larger cone angle will not reach the detector.

Field of view FOV

•or equipped with hemispherical lens detectors,

and

• the marginal ray in detectors with intermediate or

In systems without external objectives acceptance angle and FOV are identical.

F-number F/#

5.2. Detector parameters


5


Output voltage responsivity

The output voltage divided by optical power incident on the detector.

Output voltage swing

works in linear range.

GND

power supply and signal ground.

Low cut-off frequency -

High cut-off frequency -

Output noise

Average output voltage noise density

Noise measurement frequency Frequency at which output voltage noise is measured selecti-vely.

frequency

Transimpedance -

the input current signal

Noise current generated by equivalent current source in paral-

Noise voltage generated by equivalent voltage source in series

Total input noise current Parameter taking into consideration all noise sources related to the input.

Output impedance Equivalent impedance exhibited by its output terminals.

Load resistance

output. For slower detection modules it is 1 MOhm. Faster

in this case is 50 Ohm. The parame--

red with intended .

Output voltage offset The residual voltage present at the output, when no optical signal is illuminating the detector. For the DC coupled pream-

-mental conditions.

Power supply voltage

±20% tolerance is allowed.

Power supply current -

ration.

Coupling type

-

coupled by a capacitor, which removes the constant com-

-

-


5


-

Power supply input (+) and (-)

supply connectors may lead to module damage.

DC coupled, with narrow and wide bandwidths, standalone or integrated with detector in common packages. The

response.

the TI amp is the ability to maintain the detector at constant bias voltage, equal to voltage applied to the non-inverting input

schematically shown in Figure 1. The detector is modeled , shunt resistance and

capacitance . The photocurrent is proportional to the input optical power and detector current responsivity .

. Feedback capacitance is usedto set system bandwidth and eliminate gain peaking at high

The transimpedance gain can be approximated by one-pole

limited by the detector , transimpedance is equal

to . In consequence, the circuit converts linearly opticalinput power

with resulting voltage responsivity

capacitance.

Noise-

Where and are the opamp open input noise current andshort input noise voltage, respectively. is the detector im-

-


5

Technical Information5.5 Termoelectric cooler controlers

performance?

detectors- having low resistance having large capacitance.

bandwidth, gain, detector resistance, capacitance and other

or discrete transistors. Bipolar opamps are characterized by large and low , in contrast to FET-based

is low and is large. n-bipolar op-amps suits well to low Zd

d

5.5 Thermoelectric cooler controllers

Temperature sensor inputs

polarity.

Thermoelectric cooler supply input (+) and (-)

means they are not connected to the GND.

Maximum thermoelectric cooler controller output current

Maximum current that is provided by the controller to the thermoelectric cooler.

Maximum thermoelectric cooler controller output voltage

Maximum voltage that is provided by the controller to the thermoelectric cooler.

Ripple of output current-

Output current of the built-in power supplyMaximum current that can be delivered by power supply to

.

Series resistance of the connecting cable

on cable length.

Settling time of the set detector temperatureThe time taken by the cooling system to reach appropriate

Maximum voltage across thermoelectric cooler element

5.6 Thermoelectric cooling

Detector cooling reduces noises, increases responsivity and,

sink temperature.

Maximum temperature difference

rated at , at other the should be esti-mated as .

Optimum current

Maximum TEC voltage Boston Electronics www.boselec.com [email protected] (617)-566-3821

5

Technical Information 5.6 Termoelectric cooling

TEC voltage drop at .

Maximum heat pumping capacity rated at , at other cooling capacity should

be estimated as . .

Standard TEC parameters

ParameterCooling

~230 ~210

92 114

Temperature sensor-

ration temperature. TE-cooled detectors are equipped with thermistor type NCP03XM222E05RL as a standard.

NCP03XM222E05RL thermistor characteristic

should be under the maximum power dissipation at not to

the power should not exceed .

at

Table. Resistance vs temperature for NCP03XM222E05RL termistor

180 -93 1594.97 1757.95 1935.84182 -91 1336.02 1469.90 1615.75184 -89 1124.16 1234.66 1354.81186 -87 950.46 1042.11 1141.58188 -85 807.57 883.99 966.78190 -83 689.57 753.62 82 2.88192 -81 591.68 645.64 703.89194 -79 510.07 555.75 604.98196 -77 441.68 480.54 522.34198 -75 384.05 417.25 452.91200 -73 335.23 363.71 394.26202 -71 293.65 318.17 344.43204 -69 258.05 279.23 301.88206 -67 227.41 245.76 265.36208 -65 200.91 216.85 233.85210 -63 177.89 191.77 206.55212 -61 157.81 169.92 182.79214 -59 140.22 150.80 162.03216 -57 124.76 134.02 143.83218 -55 111.14 119.25 127.83220 -53 99.10 106.21 113.72222 -51 88.44 94.67 101.25224 -49 78.98 84.44 90.21226 -47 70.57 75.37 80.42228 -45 63.09 67.30 71.73230 -43 56.42 60.12 64.01232 -41 50.49 53.74 57.15234 -39 45.19 48.05 51.04236 -37 40.47 42.98 45.61238 -35 36.26 38.47 40.77240 -33 32.51 34.45 36.47242 -31 29.16 30.87 32.64244 -29 26.18 27.68 29.24246 -27 23.51 24.84 26.21248 -25 21.14 22.30 23.51250 -23 19.02 20.05 21.11252 -21 17.13 18.04 18.98254 -19 15.45 16.25 17.07256 -17 13.95 14.65 15.38258 -15 12.61 13.23 13.87260 -13 11.41 11.96 12.53262 -11 10.34 10.83 11.33264 -9 9.38 9.82 10.26266 -7 8.52 8.91 9.31268 -5 7.75 8.10 8.45270 -3 7.07 7.37 7.69272 -1 6.45 6.72 7.00274 1 5.89 6.13 6.38276 3 5.38 5.60 5.83278 5 4.93 5.13 5.32280 7 4.52 4.69 4.87282 9 4.15 4.30 4.46284 11 3.81 3.95 4.09286 13 3.50 3.63 3.75288 15 3.22 3.33 3.45290 17 2.96 3.06 3.17292 19 2.73 2.82 2.91294 21 2.51 2.59 2.68296 23 2.32 2.39 2.46298 25 2.13 2.20 2.27


5

Technical Information5.6 Termoelectric cooling

0

200

400

600

800

1000

1200

1400

1600

1800

2000

180190200210220230240250260270280290300

Rmin [k

Rnom [k

Rmax [k

Thermistorresistance[k

Heat sinkingSuitable heat sinking is necessary to dissipate heat generated by

Heat sinking via the mounting screw or via the detector ho-

be applied to improve thermal contact between detector ho-using and heat sink.

is typically recommen-

is recom-mended.


5

Technical Information 5.7 Optical immersion

5.7 Optical immersion

D* by one order of magnitude and electric capacitance

Immersed detectors parameters

Parameter SymbolHemisphere Hyperhemisphere

Theory GaAs Theory GaAs

Distance L R R R(n+1)

Linear size n 3.3 n2 10.9

n 3.3 n2 10.9

Aceptance angle 180 180 35

lens

0.5 0.5 1.57

optical size. Detectors with custom acceptance angles are available upon request.


Appendix

6

Others

Operating temperatureA detector should be operated at its optimal temperature given

Maximum voltageDo not operate the PV detector at higher bias voltages than

Be careful using ohmmeters for PV de-tectors!Standard ohmmeters may overbias and damage the detector.

-

plot mea-surements!

UsageDevices can operate in the 10% to 80% humidity, in the -20

am--

to ambient temperature range.

Storage

to temperature,

devices should be stored having leads shorted.

Handling-

-

damage. Peltier element inside thermoelectrically cooled detec-tors is susceptible to mechanical shocks. Great care should be taken when handling cooled detectors.

Cleaning window

Mechanical shocksThe Peltier element may be damaged by excessive mechanical shock or vibration. Care is recommended during manipulations

-ularly dangerous.

6.1 Precaution for use

Shaping leads

leads, maximum two right angle bends and three twists at the

Soldering leadsIR detectors can be easily damaged by excessive heat. Special

-

circuits should be applied to IR detectors too. Leads should be or below within 5s.

Beam power limitations

without immersion lens irradiated with

irradiance on the active area must not exceed . must not

exceed ,

optically immersed detectors irradiated with CW or single pulse longer than irradiance on the ap-parent optical active area must not exceed

exceed ,

,

upon request.


6

Others 6.2 Warranty

VIGO System S.A

-

-

and

1.2.

3.

4.5.6.7.8.

-gns or instructions provided by the Customer.

-

RMA request instructions:

us number.

our

us return

will not be accepted.


How to choose an IR Detector & Preamplifier

Choosing a Detector

There are four issues:

• The wavelength or wavelength region of interest • The required speed of response • Required sensitivity • Other characteristics (e.g., required power consumption, size, hardiness, price)

Wavelength or wavelength region of interest.

Our IR quantum detectors are usually sensitive enough to be useful only at wavelengths shorter than 13 microns or longer. Though some models retain useful sensitivity in visible and near infrared, we suggest they be used there only when such use allows the user to avoid adding complexity to the system by not adding a more suitable detector like silicon or germanium photodiode to a system already having ours for the longer wavelength.

Required speed of response.

If the system is to monitor rapidly changing input signals, like laser pulses, you need a fast detector. We offer nanosecond response to 11+ microns. If the system is to provide real-time control of a process, you probably only need microsecond or millisecond response. If the system just needs to turn off the room lights after the last person leaves the room, a quite slow response is probably fine. Our photovoltaic detectors typically provide excellent service for all frequencies from DC to tens or even hundreds of megahertz. Our photoconductive types (like all photoconductors), though fast, have excess noise at low frequencies (called 1/f or 'flicker' noise) and must normally be chopped at a suitable frequency and synchronously demodulated to achieve slow response.

Sensitivity

How much sensitivity do you need? The best objective expression of "sensitivity" is the signal-to-noise-ratio (S/N) that a photodetector and its following electronics produces at the point where the information is to be used. S/N>10 is often plenty and S/N>100 is normally more than enough to eliminate perceived noise when viewed as an oscilloscope trace by the human eye. Higher S/N is needed as the required precision of measurement increases. Sensitivity is often costly in both money, system complexity and logistics (such as LN2 cooling). D* (spoken "D-star") is a figure of merit for IR photodetectors that attempts to allow comparison between types. When it comes to D*, bigger is better.

For detailed info on how to predict the performance of a photodetector from knowledge of wavelength, frequency, D*, etc., and thus determine the S/N you can expect in your system, see our application note, "Predicting the Performance of a Photodetector".

Other detector characteristics

Characteristics that may influence your choice of a detector include power consumption, logistics like LN2 for cooling if required, size, robustness, and price.

Choosing a Preamplifier

1. Determine the detector you intend to purchase.

2. Determine the highest frequency you expect to see or the system chopping frequency.

3. Multiply the highest frequency or the chopping frequency by 10 if you want to resolve the waveform cleanly.

4. Consult our table of available preamps. Normally select a DC-coupled preamp for use with photovoltaic devices or an AC-coupled preamp for use with photoconductive devices, or consult us.

5. Consult us if you need customized bandwidth or special gain for your preamp. We routinely customize.

Boston Electronics Corporation, 91 Boylston Street, Brookline MA 02445 (617)566-3821 * [email protected] * www.boselec.com

by Fred Perry, Boston Electronics Corporation, 91 Boylston Street, Brookline, MA 02445 USA. Comments and corrections and questions are welcome.

The performance of a photodetector system can be predicted from the parameters D* (detectivity), Responsivity, time constant and saturation level, and from some knowledge about the noise in the system. No photodetector should be purchased until a prediction has been made. Detectivity and NEP The principal issue usually facing the system designer is whether the system will have sufficient sensitivity to detect the optical signal which is of interest. Detector manufacturers assist in making this determination by publishing the figure of merit “D*”. D* is defined as follows:

NEP

fAD

Δ*

×≡ (equation 1)

where A is the detector area in cm2 Δf is the signal bandwidth in hertz

and NEP is an acronym for “Noise Equivalent Power”, the optical input power to the detector that produces a signal-to-noise ratio of unity (S/N=1). D* is a “figure of merit” and is invaluable in comparing one device with another. The fact that S/N varies in proportion to A and f∆ is a fundamental property of infrared photodetectors.

Predicting the performance of a photodetector

mailto:[email protected]

http://www.boselec.com/


Active Area Consider a target about which we wish to measure some optical property. If the image of the target is larger than the photodetector, some energy from the target falls outside the area of the detector and is lost. By increasing the detector size we can intercept more energy. Assuming the energy density at the focal plane is constant in watts/cm2, doubling the linear dimension of the detector means that the energy intercepted increases by 422 = times. But NEP increases only as 24 = . Conversely, if the image of the target is small compared to the detector size, and if there are no pointing issues related to making the image of the target fall on the photodetector, then halving the linear dimension of the photodetector will similarly double S/N, since the input optical signal S stays constant while the NEP DECREASES by a factor of 24 = . The moral of this story is: Neither throw away photons nor detector area. Know your system well enough to decide on an optimized active area. Bandwidth Error theory tells us that signal increases in a linear fashion but noise (if it is random) adds ‘RMS’. That is, Signal increases in proportion to the time we observe the phenomenon, but Noise according to the square root of the observation time. This means that if we observe for a microsecond and achieve signal-to-noise of β, in an integration time of 100 microseconds we can expect S/N of ββ 10100 = . Bandwidth is related to integration time by the formula

πτ21

=∆f (equation 2)

where τ is the integration time or “time constant” of the system in seconds. Time constant τ is the time it takes for the detector (or the system) output to reach a

value of %6311 ≅

−

e of its final, steady state value.

Signal Signal in all quantum photodetectors is constant versus frequency at low frequencies but begins to decline as the frequency increases. The decline is a




function of the time constant. If Slow is the signal at flow, a few hertz, the signal at arbitrary frequency f » flow is

2)2(1 πτ+

= lowf

SS (equation 3)

This is graphically illustrated below. Frequency fc is the point at which lowf SS2

1= .

Noise Noise is not as simple as signal. Photoconductive devices like PbS, PbSe, and most HgCdTe exhibit “flicker” or 1/f noise, which is excess noise at low frequencies. Consequently, Signal-to-Noise ratio and D* are degraded at these




frequencies. 1/f noise actually varies as f1 in voltage terms. At high

frequencies, the detector noise actually decreases according to the same relationship as signal decreases. However, the difficulty in constructing following amplifier electronics that are significantly lower in noise than the photodetector results in system always having a noise at high frequencies that is no better than noise at low frequencies. The following set of graphs illustrates this.

To predict low frequency performance of a photoconductor, the extent to which D* is degraded by 1/f noise must be estimated. Either of the following ways is applicable: 1. use the manufacturer’s published graphical data of D* versus frequency to determine the multiplication factor Nexcess to use to convert minimum guaranteed D* at its measured frequency to D* at the frequency of interest. 2. use the 1/f “corner frequency”fcorner > flow reported by the manufacturer to estimate the degradation factor at flow as

excess noise factor low

cornerexcess f

fN = (equation 4)

In contrast to photoconductors, photovoltaic detectors normally have no 1/f noise. Signal is flat to or near DC and therefore D* is constant below the high frequency roll-off region, so no low frequency correction need be made.




Spectral response correction The D* of a quantum detector varies with wavelength λ. The detector manufacturer typically guarantees D* at the wavelength of peak response, D*(peak). When using the device at another wavelength λ, the D* should be corrected by an appropriate factor:

)(

)(peakatresponse

atresponseR−−−−

=λ

λ

λλ RDD peak ×= ** (equation 5) where the relative response at wavelength λ is estimated by inspection of spectral response curves or other data supplied by the manufacturer. Therefore, the optical input power required to produce a signal-to-noise ration of 1:1 for a stated system response time and wavelength becomes: Case 1: Photoconductor at low frequency:

excessND

fANEP ×

∆×= *

λλ (equation 6)

Case 2: Photovoltaic detector at low to moderate frequency:




*λ

λ DfA

NEP∆×

= (equation 7)

Case 3: Photoconductor or photovoltaic frequency at higher frequency:

*λ

λ DSfA

NEPf ×

∆×= (equation 8)

This yields an estimate of the input optical power to achieve a voltage output with S/N=1. Upper Limits Another important question is the dynamic range of the system, e.g. the ratio of the maximum signal available to the NEP of the system. The upper limit of the system is typically set by the electrical gain of the preamp or the vertical gain of the oscilloscope used to display the signal, combined with the maximum output signal of the preamp or the maximum vertical deflection of the oscilloscope. The dynamic range of the system is then expressed in multiples of the system NEP. Let the preamp gain be G. Let the responsivity of the detector in volts per watt (or volts per division in the case of an oscilloscope) at low frequency be Rlow and at frequency f let it be Rf where flowf SRR ×= (equation 10) The voltage signal from the detector into the preamp or oscilloscope when S/N=1 corresponding to this responsivity will be ff RNEPV ×= (equation 11) Then the output of the preamp at frequency f and S/N=1 will be GVV fpreamp ×= (equation 12)




Let the maximum output of the system be Ψpreamp volts (or Ψvertical vertical divisions in the case of an oscilloscope). The multiple of the NEP that corresponds to the maximum output Ψpreamp will therefore be

Preamp Dynamic Range GV

Df

preamp

×

Ψ= (equation 13)

Of course, with an oscilloscope it is usually possible to turn down the gain and thus increase the dynamic range. However, preamps usually have fixed gain. In that case the input optical must be attenuated in order to keep the output from the preamp from saturating. Sometimes the photodetector itself will saturate before the preamp. Some process, thermal or photonic, intrinsic to the photodetector may limit it’s output. In this case, the maximum available (saturation) output signal should be specified by the device manufacturer, typically as a not-to-exceed output voltage Ψdetector.. Graphically the situation is illuatrated as follows:

Case 1: Dynamic Range limited by the preamp

f

ector

f

preamp

VGVD detΨ

<×

Ψ= (equation 14)

Case 2: Dynamic Range limited by the detector

GVV

Df

preamp

f

ector

×

Ψ<

Ψ= det (equation 15)




This completes our prediction of system performance. We have calculated the input optical signal that corresponds to S/N=1, and the maximum output that can be extracted from the system in terms of a multiplier of the minimum input signal. The multiplier is “dynamic range”. System options As the designer, you have the following additional degrees of freedom in designing a system: 1. You may increase the size of his optics in order to deliver more optical energy to the photodetector. The key concept to remember is that throughput in any optical system, defined as Ω×= AT , where A is area in cm2 and Ω is solid angle field of view in steradians, is a constant in the system. If AD is detector area and ΩD is detector FOV, then collector area AC and collector FOV ΩC are at best satisfy

DDCC ATA Ω×==Ω× . Increasing the collector aperture decreases the FOV. 2. You may increase the efficiency of his optics (transmittance and reflectance optimization, etc). 3. You may increase the power of his source in a cooperative, active system (though not in a passive one). 4. You may increase the time he observes the signal, that is decrease the bandwidth and increase the time constant.

===========================================================

• Appendix: Sample Calculations See next page.



Responsivity

D*(10.6 um

)volts

10/9/2009 16:42PVM

-10.6200

1.5E+075

mV/W

cm.H

z1/2/w

attA

ssume detector saturation for C

W signal is

20m

VA

ssume detector saturation for single fast pulse is

600m

vA

ssume w

avelength is 10.6 microns

Assum

e active area is 1x1 mm

Assum

e resistance is 50 ohms

CW

casePulsed case

SystemTim

e3dB

SystemO

ptical signalElectrical signal

S/N at

S/N at

S/N at

Elements

Constant

FrequencyG

ain (voltage)R

esponsivityfor S/N

=1for S/N

=1D

etectorD

etectorPream

p(nsec)

(MH

z)(V/W

)(N

EP, microw

atts)(m

illivolts)Saturation

SaturationSaturation

PVM-10.6 unam

plified<1

1601

0.284

0.021186

35576no pream

pPVM

-10.6 with 493A

/40<1

500100

20149

2.98671

201251677

PVM-10.6 w

ith 493A<1

50010

2149

0.30671

2012516771

PVM-10.6 w

ith 481-200<1

20040

894

0.751061

318201326

PVM-10.6 w

ith 481-1001.5

10080

1667

1.071500

45000938

PVM-10.6 w

ith 481-503

50200

4047

1.892121

636402652

PVM-10.6 w

ith 481-208

20200

4030

1.193354

1006234193

PVM-10.6 w

ith 481-1015

10400

8021

1.694743

1423022965

PVM-10.6 w

ith 481-530

5960

19215

2.866708

2012461747

PVM-10.6 w

ith 481-1150

14000

8006.7

5.3315000

450000938

PVM-10.6 w

ith 481-0.11500

0.14000

8002.1

1.6947434

14230252965

PVM-10.6 w

ith 481-0.0115000

0.014000

8000.7

0.53150000

45000009375

Time constant τ

BW of

detectorSquare root of the

Optical signal

SaturationSaturation

Clipping

and 3dB frequencypream

presponsivity

detector areaat S/N

=1 times

level forlevel for

level forare related by

indicatedtim

es gaintim

es square rootSystem

CW

signalPulsed

preamp

f=1/(2πτ)of the 3dB

Responsivity

divided bysignal

divided by-slow

er offrequency divided

Optical

divided byelectrical

detector or preamp

by the D* from

signal at

Optical

signal forshow

nproduct lit

S/N=1

signal atS/N

=1S/N

=1

5 1

Boston

Electron

ics Corp

orationA

mplifier 481-1X to 481-

20X saturates at……

…481-200X saturates at…

..493A

and 493A/40

saturates at .............

from product lit

and typical 50 Ω

detector resistance

Shading indicates saturation of detector or pream

p for C

W

case

This rather com

plicated chart is intended to illustrate how the perform

ance of our detectors (in this example the m

odel PVM

-10.6 with 1x1 m

m active area and

typical values of responsivity and D*) is affected by variously by (a) saturation of the detector itself or (b) by saturation of a follow

ing preamp. T

he shaded cells indicate the low

er of S/N for C

W signals and indicates w

hether it is the detector that saturates first or the preamp that saturates first. W

e loosely define saturation in the detector as the point at w

hich output deviates from linearity by 20%

; in the preamp w

e define saturation as the output at which the signal is clipped. N

otice that detector saturation is M

UC

H L

OW

ER

for the CW

case. The m

ost comm

on signal is quasi-CW

(for example an R

F-modulated C

O2 laser) and should be

considered CW

. Any pulsed laser w

ith a duty cycle over 1% or pulse length longer than 10 m

icroseconds is probably more like C

W than pulsed.

PVM-10.6 saturation w

ith preamps rev 10-9-09.XLS

Page 9

Time Constant and High Frequency Cut Off Calculator

Time Frequency Time Frequency

Constant (τ) (MHz) Constant (τ) (MHz)

(nsec) hf (nsec) hf

0.1 1592.36 10 15.92

0.2 796.18 20 7.96

0.3 530.79 40 3.98

0.4 398.09 80 1.99

0.5 318.47 100 1.59

0.6 265.39 120 1.33

0.7 227.48 140 1.14

0.8 199.04 150 1.06

0.9 176.93 160 1.00

1 159.24 180 0.88

2 79.62 200 0.80

3 53.08 220 0.72

4 39.81 240 0.66

5 31.85 250 0.64

6 26.54 260 0.61

7 22.75 280 0.57

8 19.90 300 0.53

9 17.69 320 0.50

fh = 1/(2*π*τ)

fh = high cutoff frequency

τ = time constant of detector (unbiased or biased) - see detector data sheet for values

Calculatorenter tau to calculate for high cutoff frequency

1.5 106.10 MHz

τ fh

[email protected]



NOTES


Prices subject to change without notice

Vigo detector sets we stock in Boston

SET Description - reason for selecting Composed of Price USD $PVMI-4TE-10.6-1x1PIP-DC-200M-F-M8PTCC-01-BAS

PVM-10.6-1x1SIP-DC-100M-GPPS-03

PVI-4TE-6-1x1PIP-DC-200M-F-M8PTCC-01-BAS

PVM-10.6-1x1uIP-DC-10M-SPPS-03

Sets in stock to solve customer immediate delivery needs

VS1Sensitive fast 1x1 mm LWIR set for < 2 to 11+ microns with user selectable DC or AC-coupling, user selectable upper frequency 1.5MHz, 15MHz or 200MHz, and variable gain

$4,405

VS3Room temp fast 1x1 mm LWIR set, small, for < 2 to 11+microns, DC to 100MHz and variable gain

$2,647

VS10Room temp fast 1x1 mm LWIR set, micro sized preamp, for< 2 to 11+ microns, DC to 10MHz

$2,330

VS7Sensitive fast MWIR set for < 3.5 to 6+ microns with user selectable DC- or AC-coupling, user selectable upper frequency 1.5MHz, 15MHz or 200MHz and variable gain

$3,834

03-09-19 We stock for immediate delivery 03--09-19

staff - ir detectors€¦ · vigo system has been providing infrared detectors to the market for...

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