spec. no. : c384q8 cystech electronics corp. issued date : 2012.04.30...

CYStek Electronics Corp. Spec. No. : C384Q8 Issued Date : 2012.04.30 Revised Date : 2021.05.06 Page No. : 1/13

MTC4503Q8 CYStek Product Specification

N- AND P-Channel Enhancement Mode MOSFET MTC4503Q8

Features

• Low On Resistance

• Low Gate Charge

• Fast Switching Characteristic

Equivalent Circuit Outline

Ordering Information

Device Package Shipping

MTC4503Q8-0-TF-G SOP-8

(Pb-free lead plating and halogen-free package) 4000 pcs / Tape & Reel

SOP-8

MTC4503Q8

Packing spec, TF: 4000 pcs / tape & reel, 7” reel

Product rank, zero for no rank products

N-CH P-CH

BVDSS 30V -30V

ID@VGS=(-)10V, TC=25°C 12A -10A

ID@VGS=(-)10V, TA=25°C 6A -5A

RDS(ON) typ. @VGS=(-)10V 15 mΩ 25mΩ

RDS(ON) typ. @VGS=(-)4.5V 20mΩ 38mΩ

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Product name

Pin 1 S1 G1

S2 G2

D2 D2

D1 D1



Absolute Maximum Ratings (TA=25C)

Parameter Symbol Limits

Unit N-CH P-CH

Drain-Source Voltage VDS 30 -30 V

Gate-Source Voltage VGS ±20 ±20

Continuous Drain Current @ VGS=(-)10V, TC=25C *a

ID

12 -10

A

Continuous Drain Current @ VGS=(-)10V, TC=100C *a 8 -6

Continuous Drain Current @ VGS=(-)10V, TA=25C *b 6 -5

Continuous Drain Current @ VGS=(-)10V, TA=70C *b 5 -4

Pulsed Drain Current *c IDM 24 -20

Continuous Body Diode Forward Current @ TC=25C *a IS 4 -4

Avalanche Current @ L=0.1mH IAS 10 -15

Avalanche Energy @ L=0.5mH EAS 9 16 mJ

Total Power

Dissipation

TC=25C *a

PD

5.7

W TC=100C *a 2.3 TA=25C *b 1.5 TA=70C *b 1

Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 C

Thermal Data

Parameter Symbol Steady State Unit

Thermal Resistance, Junction-to-case RθJC 22 C/W

Thermal Resistance, Junction-to-ambient *b RθJA

86

Note:

*a. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in

setting the upper dissipation limit for cases where additional heatsinking is used.

*b. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment

with TA=25°C. The power dissipation PD is based on RθJA and the maximum allowed junction temperature of 150°C. The

value in any given application depends on the user’s specific board design.

*c. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and

low duty cycles to keep initial TJ=25°C.



N-Channel Electrical Characteristics (TA=25C, unless otherwise specified)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BVDSS 30 - - V

VGS=0V, ID=250μA

VGS(th) 1 - 2.5 VDS=VGS, ID=250μA

GFS - 5.4 - S VDS=10V, ID=3A

IGSS - - ±100 nA VGS=±20V, VDS=0V

IDSS - - 1 μA VDS=24V, VGS=0V

RDS(ON) - 15 19

mΩ VGS=10V, ID=6A

- 20 26 VGS=4.5V, ID=4A

Dynamic

Ciss - 510 -

pF VDS=15V, VGS=0V, f=1MHz Coss - 75 -

Crss - 58 -

Rg - 4.5 - Ω f=1MHz

Qg *1, 2 - 13 -

nC VDS=15V, ID=6A, VGS=10V Qgs *1, 2 - 1.6 -

Qgd *1, 2 - 2.5 -

td(ON) *1, 2 - 5.6 - ns VDS=15V, ID=6A, VGS=10V, RGS=1Ω

tr *1, 2 - 7.5 -

td(OFF) *1, 2 - 26 - tf *1, 2 - 4.5 -

Source-Drain Diode

VSD *1 - 0.85 1.2 V IS=6A, VGS=0V

trr - 7 - ns IF=6A, dIF/dt=100A/μs

Qrr - 3 - nC

Note:

*1. Pulse Test : Pulse Width 300μs, Duty Cycle2% *2. Independent of operating temperature



P-Channel Electrical Characteristics (TA=25C, unless otherwise specified)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BVDSS -30 - - V

VGS=0V, ID=-250μA

VGS(th) -1 - -2.5 VDS=VGS, ID=-250μA

GFS - 5.7 - S VDS=-10V, ID=-5A

IGSS - - ±100 nA VGS=±20V, VDS=0V

IDSS - - -1 μA VDS=-24V, VGS=0V

RDS(ON) - 25 34

mΩ VGS=-10V, ID=-5A

- 38 49 VGS=-4.5V, ID=-4A

Dynamic

Ciss - 1000 -

pF VDS=-15V, VGS=0V, f=1MHz Coss - 110 -

Crss - 95 -

Rg - 22 - Ω f=1MHz

Qg *1, 2 - 20 -

nC VDS=-15V, ID=-5A, VGS=-10V Qgs *1, 2 - 3.8 -

Qgd *1, 2 - 4 -

td(ON) *1, 2 - 8.2 - ns VDS=-15V, ID=-5A, VGS=-10V, RGS=10Ω

tr *1, 2 - 18 -

td(OFF) *1, 2 - 65 - tf *1, 2 - 28 -

Source-Drain Diode

VSD *1 - -0.85 -1.2 V IS=-5A, VGS=0V

trr - 11 - ns IF=-5A, dIF/dt=100A/μs

Qrr - 6 - nC

Note:

*1. Pulse Test : Pulse Width 300μs, Duty Cycle2% *2. Independent of operating temperature



Typical Characteristics : Q1( N-channel )

0

5

10

15

20

25

0 2 4 6 8 10

ID, D

rain

Cur

rent

(A)

VDS, Drain-Source Voltage(V)

Typical Output Characteristics

VGS=2.5V

10V, 9V, 8V, 7V, 6V, 5V, 4V,3.5V

3V

0.8

0.9

1

1.1

1.2

-75 -50 -25 0 25 50 75 100 125 150 175

BV

DS

S, N

orm

aliz

ed D

rain

-Sou

rce

Bre

akdo

wn

Vol

tage

TJ, Junction Temperature(°C)

Breakdown Voltage vs Ambient Temperature

ID=250μA

VGS=0V

5

10

15

20

25

30

0 5 10 15 20

RD

S(O

N),

Sta

tic

Dra

in-S

ourc

e O

n-S

tate

Res

ista

nce(

mΩ

)

ID, Drain Current(A)

Static Drain-Source On-State resistance vs Drain Current

VGS=4.5V

VGS=10V

0.2

0.4

0.6

0.8

1

1.2

0 5 10 15 20

VSD

, S

ourc

e-D

rain

Vol

tage

(V)

IS, Body Diode Current(A)

Body Diode Current vs Source-Drain Voltage

TJ=25°C

TJ=150°C

0

10

20

30

40

50

0 2 4 6 8 10

RD

S(O

N),

Sta

tic

Dra

in-S

ourc

e O

n-S

tate

Res

ista

nce(

mΩ

)

VGS, Gate-Source Voltage(V)

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

ID=6A

0

0.5

1

1.5

2

2.5

-75 -50 -25 0 25 50 75 100 125 150 175

RD

S(O

N),

Nor

mal

ized

Sta

tic

Dra

in-S

ourc

e O

n-

Sta

te R

esis

tanc

e


Drain-Source On-State Resistance vs Junction Temperature

VGS=10V, ID=6A

RDS(ON)@TJ=25°C : 15mΩ typ.



Typical Characteristics (Cont.) : Q1( N-channel)

10

100

1000

0 10 20 30

Cap

acit

ance

(pF

)


Capacitance vs Drain-to-Source Voltage

Coss

Ciss

Crss

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25 0 25 50 75 100 125 150 175V

GS(t

h), N

orm

aliz

ed T

hres

hold

Vol

tage


Threshold Voltage vs Junction Temperature

ID=250μA

ID=1mA

0.01

0.1

1

10

0.001 0.01 0.1 1 10

GFS, F

orw

ard

Tra

nsfe

r A

dmit

tanc

e(S

)

ID, Drain Current(A)

Forward Transfer Admittance vs Drain Current

TA=25°C

Pulsed

VDS=15V

VDS=10V

0

2

4

6

8

10

0 2 4 6 8 10 12 14

VG

S, G

ate-

Sou

rce

Vol

tage

(V)

Qg, Total Gate Charge(nC)

Gate Charge Characteristics

VDS=15V

ID=6A

0.01

0.1

1

10

100

0.01 0.1 1 10 100

ID, D

rain

Cur

rent

(A)


Maximum Safe Operating Area

DC

10ms

1ms

100μsRDS(ON)

Limited

TA=25°C, TJ=150°C, VGS=10V

RθJA=86°C/W,Single Pulse

1s

100ms

10s

0

1

2

3

4

5

6

7

25 50 75 100 125 150 175

ID, M

axim

um D

rain

Cur

rent

(A)


Maximum Drain Current vs Junction Temperature

VGS=10V,

RθJA=86°C/W



Typical Characteristics (Cont.) : Q1( N-channel)

0

100

200

300

400

500

0.0001 0.001 0.01 0.1 1 10 100

Pow

er (

W)

Pulse Width(s)

Single Pulse Power Rating, Junction to Ambient

TJ(MAX)=150°C

TA=25°CRθJA=86°C/W

0.001

0.01

0.1

1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

r(t)

, Nor

mal

ized

Eff

ective

Tra

nsie

nt T

herm

al R

esis

tanc

e

t1, Square Wave Pulse Duration(s)

Transient Thermal Response Curves

Single Pulse

0.01

0.05

0.1

0.2

D=0.5

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=86°C/W

0.02



Typical Characteristics : Q2( P-channel)

0

5

10

15

20

25

0 2 4 6 8 10

-ID, D

rain

Cur

rent

(A

)

-VDS, Drain-Source Voltage(V)

Typical Output Characteristics

-10V, -9V, -8V, -7V,-6V,-5V

VGS=-3V

-4V

-3.5V

0.8

0.9

1

1.1

1.2

-75 -50 -25 0 25 50 75 100 125 150 175

-BV

DS

S, N

orm

aliz

ed D

rain

-Sou

rce

Bre

akdo

wn

Vol

tage


Breakdown Voltage vs Ambient Temperature

ID=-250μA

VGS=0V

10

20

30

40

50

0 5 10 15 20

RD

S(o

n), S

tatic

Dra

in-S

ourc

e O

n-S

tate

Res

ista

nce(

mΩ

)

-ID, Drain Current(A)

Static Drain-Source On-State resistance vs Drain Current

VGS=-4.5V

VGS=-10V

0.2

0.4

0.6

0.8

1

1.2

0 5 10 15 20

-VS

D, S

ourc

e-D

rain

Vol

tage

(V)

-IS, Body Diode Current(A)

Body Diode Current vs Source-Drain Voltage

TJ=25°C

TJ=150°C

0

20

40

60

80

100

0 2 4 6 8 10

RD

S(o

n), S

tati

c D

rain

-Sou

rce

On-

Sta

te

Res

ista

nce(

mΩ

)

-VGS, Gate-Source Voltage(V)

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

ID=-5A

0

0.5

1

1.5

2

2.5

-75 -50 -25 0 25 50 75 100 125 150 175

RD

S(o

n), N

orm

aliz

ed S

tati

c D

rain

-Sou

rce

On-

Sta

te

Res

ista

nce


Drain-Source On-State Resistance vs Junction Temperature

VGS=-10V, ID=-5A

RDS(ON)@TJ=25°C : 25mΩ typ.



Typical Characteristics (Cont.) : Q2(P-channel)

10

100

1000

10000

0 10 20 30

Cap

acit

ance

(pF

)

-VDS, Drain-Source Voltage(V)

Capacitance vs Drain-to-Source Voltage

Coss

Ciss

Crss

0.2

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25 0 25 50 75 100 125 150 175

-VG

S(t

h), T

hres

hold

Vol

tage

(V)


Threshold Voltage vs Junction Temperature

ID=-250μA

ID=-1mA

0.01

0.1

1

10

0.001 0.01 0.1 1 10

GFS, F

orw

ard

Tra

nsfe

r A

dmit

tanc

e(S

)

-ID, Drain Current(A)

Forward Transfer Admittance vs Drain Current

TA=25°CPulsed

VDS=-15V

VDS=-10V

0

2

4

6

8

10

0 5 10 15 20 25

-VG

S, G

ate-

Sou

rce

Vol

tage

(V)

Qg, Total Gate Charge(nC)

Gate Charge Characteristics

VDS=-15V

ID=-5A

0.01

0.1

1

10

100

0.01 0.1 1 10 100

-ID, D

rain

Cur

rent

(A)

-ID, Drain-Source Voltage(V)

Maximum Safe Operating Area

DC

10ms

100ms

100μs

TA=25°C, TJ=150°C, VGS=-10VRθJA=86°C/W, Single Pulse

1s

1ms

RDS(ON)Limited

10s

0

1

2

3

4

5

6

25 50 75 100 125 150 175

-ID, M

axim

um D

rain

Cur

rent

(A)


Maximum Drain Current vs Junction Temperature

VGS=-10V,

RθJA=86°C/W



Typical Characteristics (Cont.) : Q2(P-channel)

Recommended Soldering Footprint

0

100

200

300

400

500

600

700

0.0001 0.001 0.01 0.1 1 10 100

Pow

er (

W)

Pulse Width(s)

Single Pulse Power Rating, Junction to Ambient

TJ(MAX)=150°C

TA=25°CRθJA=86°C/W

0.001

0.01

0.1

1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

r(t)

, Nor

mal

ized

Eff

ective

Tra

nsie

nt T

herm

al R

esis

tanc

e

t1, Square Wave Pulse Duration(s)

Transient Thermal Response Curves

Single Pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=86°C/W



Reel Dimension

Carrier Tape Dimension



Recommended wave soldering condition Product Peak Temperature Soldering Time

Pb-free devices 260 +0/-5 C 5 +1/-1 seconds

Recommended temperature profile for IR reflow

Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate

(Tsmax to Tp) 3C/second max. 3C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

100C

150C 60-120 seconds

150C

200C 60-180 seconds

Time maintained above: −Temperature (TL) − Time (tL)

183C 60-150 seconds

217C 60-150 seconds

Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C

Time within 5C of actual peak temperature(tp)

10-30 seconds 20-40 seconds

Ramp down rate 6C/second max. 6C/second max.

Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.



SOP-8 Dimension

*: Typical

DIM Millimeters Inches

DIM Millimeters Inches

Min. Max. Min. Max. Min. Max. Min. Max.

A 1.350 1.750 0.053 0.069 E 3.800 4.000 0.150 0.157

A1 0.100 0.250 0.004 0.010 E1 5.800 6.200 0.228 0.244

A2 1.350 1.550 0.053 0.061 e *1.270 *0.050

b 0.330 0.510 0.013 0.020 L 0.400 1.270 0.016 0.050

c 0.170 0.250 0.006 0.010 θ 0° 8° 0° 8°

D 4.700 5.100 0.185 0.200

Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Marking:

8-Lead SOP-8 Plastic Package CYStek Package Code: Q8

Date Code

Device Name 4503SS □□□□ X

Date Code(counting from left to right) :

1st code: year code, the last digit of Christian year

2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D

May→E, Jun→F, Jul→G, Aug→H, Sep→J,

Oct→K, Nov→L, Dec→M

3rd and 4th codes : production serial number, 01~99

Assembly

Site Code

Assembly Site Code : blank→ Site 1, G →Site 2

spec. no. : c384q8 cystech electronics corp. issued date : 2012.04.30...

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