Y. Unno, 2007/2/26

sLHC sensor R&D• Module Plans (Nobu)• Manufacturing plans, including financing (Nobu)• Sensor Specs (Nobu)

Y. Unno, 2007/2/26

ATLAS06J fabrication• Masks are done• Fabrication is on-g

oing– p-FZ(100)

– p-MCZ(100)

– 3 wafers each

• Delivery– April

• Irradiation– End April

– 70 (or 80) MeV p

Y. Unno, 2007/2/26

ATLAS07

• 150mm wafer– p-FZ(100)

• n-strip isolation– Individual p-stop

• 4 segments– SS: as is– LS: wire-bond segments

Y. Unno, 2007/2/26

Stereo?

Y. Unno, 2007/2/26

Edge stereo connection

Y. Unno, 2007/2/26

ATLAS07 specification

Y. Unno, 2007/2/26

ATLAS07• Design

– 2 months+?– by May?

• Fabrication– a few months– depends on quantity

• Financing– Mask cost to be shared– No. wafers=Cost share– Invoices

• Japan: KEK

• Outside Japan: CERN TID

• My big question mark– Readout ASIC?

• Irradiation campaign– CYRIC (70-80 MeV p)

• (April), Aug, Nov,Mar

– PSI (pions)– Neutrons

• Dummy ATLAS07– Al metal only– Who are interested?– How many?– Financing with same mod

el

Y. Unno, 2007/2/26

ATLASxx plan• 2007 3-5 Design of pre-prototype (Barrels)• 2007 6-9 Fabrication of pre-prototype• 2007 9- Irradiation, Module fabrication a

nd evaluation• 2008 3-6 Design of prototype (Barrels, En

dcaps)• 2008 6-10 Fabrication of prototypes• 2008 10- Irradiation, Module fabrication a

nd evaluation, beamtests• 2010 2 TDR

Y. Unno, 2007/2/26

Sensor parameters for ASIC

• 1-MeV neq /cm2 • Fluence by particles

Y. Unno, 2007/2/26

Sensor parameters for ASIC• Constraint from HV

cable rating– 500 V– (1 kV tested)

• Sensor operation– <500 V

• Parameters for ASIC– at 500 V– Preliminary

Y. Unno, 2007/2/26

Sensor parameters for ASIC

• Preliminary!!!

pFZ initial pFZ 5x1014 pFZ 9x1013 pMCZ Initial pMCZ 5x1014 pMCZ 9x1014

Coupling type to amplifier AC <- <- AC <- <-

Coupling capacitance to amp Total for 2.4, 4.8, 9.6 cm strips

20 pF/cm 48, 96, 192 pF

<- <- 20 pF/cm 48, 96, 192 pF

<- <-

Capacitance of strip to all neighbour strips 1.03 pF/cm <- <- 1.03 pF/cm <- <-

Capacitance of strip to backplane 0.30 pF/cm 0.42 pF/cm 0.48 pF/cm 0.4 pF/cm 030 pF/cm 0.33 pF/cm

Metal strip resistance 15 /cm <- <- 15 /cm <- <-

Bias Resistor 1.5 M <- <- 1.5 M <- <-

Max leakage current per strip for shot noise

2.4, 4.8, 9.6 cm strips

0.5, 1, 2 nA 0.3, 0.6, 1.2 µA 0.5, 1, 2 A 0.5, 1, 2 nA 0.3, 0.6, 1.2 µA 0.5, 1, 2 A

Charge collection efficiency (at 500 V) 1 0.6 0.45 0.6 0.85 0.6

Charge collection time < 10 ns <- <- < 10 ns <- <-

Y. Unno, 2007/2/26

Module plan• Modules

– have to have– ABCN

• when?

– hybrids• develop along with A

BCN

– fabrication of modules

• time scale uncertain

• Staves– ?