sja 0020a 100 - willasto-252)2018.10_f01.pdf · 1. general description. the . product requirement,...

1

Symbol Parameter Rating Units

VDS Drain-Source Voltage 100 V

VGS Gate-Source Voltage ±20 V

ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 56 A

ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 36 A

IDM Pulsed Drain Current2 120 A

EAS Single Pulse Avalanche Energy3 143.6 mJ

IAS Avalanche Current 53.6 A

PD@TC=25℃ Total Power Dissipation4 83 W

TSTG Storage Temperature Range -55 to 150 ℃

TJ Operating Junction Temperature Range -55 to 150 ℃

Symbol Parameter Typ. Max. Unit

RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W

RθJC Thermal Resistance Junction-Case1 --- 1.5 ℃/W

BVDSS RDSON ID

100V 13mΩ 56A

The SJA0020A is the high cell density trenched

N-ch MOSFETs, which provide excellent RDSON

and gate charge for most of the synchronous buck

converter applications.

The SJAD0020A meet the RoHS and Green

Product requirement, 100% EAS guaranteed with

full function reliability approved.

100% EAS Guaranteed

Green Device Available

Super Low Gate Charge

Excellent CdV/dt effect decline

Advanced high cell density Trench

technology

General Description

Absolute Maximum Ratings

Thermal Data

TO252 Pin Configuration

N-Ch 100V Fast Switching MOSFETs �� SJA0020A

2018.мл www.willas.com.tw Rev.Ŧлм

http://www.fetek.com.tw/

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V

△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.09 --- V/℃

RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=30A --- --- 13 m

VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA

2.0 --- 4.5 V

△VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃

IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1

uA VDS=80V , VGS=0V , TJ=55℃ --- --- 5

IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA

gfs Forward Transconductance VDS=5V , ID=30A --- 58 --- S

Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- --- 3.0

Qg Total Gate Charge (10V)

VDS=80V , VGS=10V , ID=30A

--- 48.5 ---

nC Qgs Gate-Source Charge --- 13.7 ---

Qgd Gate-Drain Charge --- 18.9 ---

Td(on) Turn-On Delay Time

VDD=50V , VGS=10V , RG=3.3,

ID=30A

--- 22 ---

ns Tr Rise Time --- 30 ---

Td(off) Turn-Off Delay Time --- 40 ---

Tf Fall Time --- 12 ---

Ciss Input Capacitance

VDS=15V , VGS=0V , f=1MHz

--- 2947 ---

pF Coss Output Capacitance --- 390 ---

Crss Reverse Transfer Capacitance --- 177 ---

Symbol Parameter Conditions Min. Typ. Max. Unit

IS Continuous Source Current1,5 VG=VD=0V , Force Current

--- --- 56 A

ISM Pulsed Source Current2,5 --- --- 120 A

VSD Diode Forward Voltage2 VGS=0V , IS=A , TJ=25℃ --- --- 1.2 V

trr Reverse Recovery Time

IF=30A , dI/dt=100A/µs , TJ=25℃

--- 29.5 --- nS

Qrr Reverse Recovery Charge --- 35 --- nC

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.6A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Diode Characteristics




Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Voltage

Fig.3 Forward Characteristics of Reverse diode

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ




0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

Norm

aliz

ed T

herm

al R

esponse (

RθJC)

0.01

0.05

0.1

0.2

DUTY=0.5

SINGLE

PDM

D = TON/T

TJpeak = TC+PDMXRθJC

TON

T

0.02

Td(on) Tr

Ton

Td(off) Tf

Toff

VDS

VGS

90%

10%

Fig.8 Safe Operating Area

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.7 Capacitance

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform




.09V(2.S0)

.08Q(2.O0)

.0QS(0.VW)

.01T(0.4N)

.053(1.35)

.065(1.65)

.0UU(1.WS)

.0QS(N.W0)

.017(0.43)

.023(0.58)

.2RV(6.3N)

.26S(6.UQ)

.OVW(R.V0)

.21S(5.4T)

.3TP(9.P0)

.RO0(O

N.RO)

.2NV(5.Q0)

.2RT(T.PS)

.0OP(0.Q0)

.0QS(0.VW)

.177(4.50)

.185(4.70)

.0RQ(O.O0)

.02N(0.S0)

2.30 TYP..091 TYP.

.03W(O.N0)

.02R(0.T0)

Outline Drawing

Dimensions in inches and (millimeters)

Rev.B

TO-252



Ordering Information: Device PN Packing

SJA0020A ‐T(1)H(2)‐WS Tape&Reel: 2.5 Kpcs/Reel Note: (1) Packing code, Tape & Reel

(2) Halogen free product for packing code suffix “H”

Packing

***Disclaimer*** WILLAS reserves the right to make changes without notice to any product

specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. This is the preliminary specification. WILLAS products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures.


N-Ch 100V Fast Switching MOSFETs ��

� SJA0020A

sja 0020a 100 - willasto-252)2018.10_f01.pdf · 1. general description. the . product requirement,...

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