Simulácie v polovodičochSimulácie v polovodičoch

Peter Ballo Ladislav Harmatha

Peter Ballo Ladislav Harmatha

Kremikova zakladna bunkaKremikova zakladna bunka

Korekčná funkcia v MNDOKorekčná funkcia v MNDO

1,0 1,5 2,0 2,5 3,0 3,5 4,0-0,05

0,00

0,05

0,10

0,15

0,20

0,25

0,30

En

erg

y (e

V)

Distance (A)

Kyslíkový defekt v kremíkuKyslíkový defekt v kremíkuMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDEN

Dvojitý kyslíkový defektDvojitý kyslíkový defekt

A

O

B

C

defaults used first point

MOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDEN A

B

C

O

defaults used first point

A centrum H centrumA centrum H centrum

B

O

C

A

defaults used first point

MOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDEN

A

B

C

O

defaults used first point

MOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDENMOLDEN

Oxygen defect in silicon - new MNDO parametrization

P.BalloDepartment of Physics

And

L.Harmatha

Department of MicroelectronicsFaculty of Electrical Engineering and Information Technology

Slovak University of Technology, Ilkovičova 3, 812 19 BratislavaSlovak Republic

Oxygen defect in silicon - new MNDO parametrization

P.BalloDepartment of Physics

And

L.Harmatha

Department of MicroelectronicsFaculty of Electrical Engineering and Information Technology

Slovak University of Technology, Ilkovičova 3, 812 19 BratislavaSlovak Republic

Tunelovanie na trojuholnikovej bariereTunelovanie na trojuholnikovej bariere

0 1 2 3 4 50 .0

0 .2

0 .4

0 .6

0 .8

1 .0

T

E ne rgi a E /U 0

CU charakteristika

MOS s extremne tenkým oxidom

CU charakteristika

MOS s extremne tenkým oxidom

0,0 0,2 0,4 0,6 0,8 1,0

0,00E+000

5,00E-016

1,00E-015

1,50E-015

2,00E-015

Ka

pa

cita

(F

)

Napätie (V)