MATERIALS RESEARCH SOCIETY

SYMPOSIUM PROCEEDINGS VOLUME 911

Silicon Carbide 2006 Materials, Processing

and Devices Symposium held April 18-20, 2006, San Francisco, California, U.S.A.

EDITORS:

Michael Dudley State University of New York-Stony Brook

Stony Brook, New York, U.S.A.

Michael A. Capano Purdue University

West Lafayette, Indiana, U.S.A.

Tsunenobu Kimoto Kyoto University

Katsura, Kyoto, Japan

Adrian R. Powell Cree Inc.

Durham, North Carolina, U.S.A.

Shaoping Wang Fairfield Crystal Technology

New Milford, Connecticut, U.S.A.

MIRISI Materials Research Society

Warrendale, Pennsylvania

CONTENTS

Preface xv

Materials Research Society Symposium Proceedings xvi

BULKGROWTH

* Investigation of Dislocation Behavior During Bulk Crystal GrowthofSiC 3

Noboru Ohtani, Masakazu Katsuno, Masashi Nakabayashi, Hiroshi Tsuge, Tatsuo Fujimoto, Hirokatsu Yashiro, Mitsuru Sawamura, Takashi Aigo, and Taizo Hoshino

High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications 11

D.P. Malta, J.R. Jenny, V.F. Tsvetkov, M. Das, St. G. Müller, H. McD. Hobgood, C.H. Carter Jr., R.J. Kumar, J.M. Borrego, and R.J. Gutmann

Novel Method for High Speed SiC Vapor Growth 17 Xiaolin Wang, Cai Dang, Hui Zhang, and Michael Dudley

Effect of Radiation in Solid During SiC Sublimation Growth 29

Shin-ichi Nishizawa, Shin-ichi Nakashima, and Tomohisa Kato

EPITAXIÄL GROWTH

* Advances in 4H-SiC Homoepitaxy for Production and Development of Power Devices 37

Bernd Thomas, Christian Hecht, Rene Stein, and Peter Friedrichs

* Growth of Crystalline Silicon Carbide by CVD Using Chlorosilane Gases 49

M.J. Loboda, M.F. MacMillan, J. Wan, G. Chung, E. Carlson, Y. Makarov, A. Galyukov, and M.J. Molnar

*Invited Paper

v

* Do You Really Expect to Grow Epilayers on That? A Rationale for Growing Epilayers on Roughened Surfaces 5S

J.J. Sumakeris, Brett A. Hüll, Michael J. O'Loughlin, S. Ha, Marek Skowronski, John W. Palmour, and Calvin H. Carter Jr.

* Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling 6*

Michel Pons, Shin-Ichi Nishizawa, Peter Wellmann, Elisabeth Blanquet, Didier Chaussende, and Jean Marc Dedulle

* Development of a High-Growth Rate 3C-SiC on Si CVD Process 75

M. Reyes, Y. Shishkin, S. Harvey, and S.E. Saddow

* Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas 8f

Philip G. Neudeck, Andrew J. Trunek, David J. Spry, J. Anthony Powell, Hui Du, Marek Skowronski, Nabil D. Bassim, Michael A. Mastro, Mark E. Twigg, Ronald T. Holm, Richard L. Henry, and Charles R. Eddy Jr.

High Growth Rate Process in a SiC Horizontal Reactor With HCl Addition: Structural and Electrical Characterization 9i

Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, Ferdinando Portuese, Lucia Calcagno, and Gaetano Foti

Morphology Control, Dopant Incorporation, and Selective Epitaxial Growth of 4H-SiC at Low Temperatures Using CH3CI Growth Precursor 10

Yaroslav Koshka, Bharat Krishnan, Huang-De Lin, and Galyna Melnychuk

High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications 10

Jie Zhang, Janice Mazzola, Esteban Romano, Carl Hoff, Mike Mazzola, Janna Casady, and Jeff Casady

*Invited Paper

vi

Homoepitaxial Growth on 4H-SiC Substrates by Chemical Vapor Deposition 113

Christer Hallin, Igor Khlebnikov, Yuri Khlebnikov, Peter Muzykov, Elif Berkman, Monica Sharma, George Stratiy, Murat Silan, Cem Basceri, and Cengiz Balkas

Epitaxial Growth and Characterization of SiC on Different Orientations 119

Larry B. Rowland, Canhua Li, Greg T. Dünne, and Jody A. Fronheiser

Crystal Face and C/Si Ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth 125

Takeshi Tawara, Yuko Ueki, Shunichi Nakamura, Masahide Gotoh, Yoshiyuki Yonezawa, and Masaharu Nishiura

Surface Morphology and Structure of Hydrogen Etched 3C-SiC(001) on Si(OOl) 131

Camilla Coletti, Martin Hetzel, Chariya Virojanadara, Ulrich Starke, and Stephen E. Saddow

Process Control During Liquid Phase Regrowth of 3C-SiC on Si Substrates 137

Mark P. Smith, Matthias Voelskow, Richard A. McMahon, Andreas Muecklich, Wolfgang Anwand, and Wolfgang Skorupa

EXTENDED DEFECTS AND STRUCTURAL CHARACTERIZATION

' Process-Induced Deformations and Stacking Faults in 4H-SiC 145 Robert S. Okojie, Xianrong Huang, Michael Dudley, Ming Zhang, and Pirouz Pirouz

Multiplication of Basal Plane Dislocations via Interaction With c-Axis Threading Dislocations in 4H-SiC 151

Yi Chen, Govindhan Dhanaraj, Michael Dudley, Hui Zhang, Ronghui Ma, Yevgeniy Shishkin, and Stephen E. Saddow

*Invited Paper

vn

Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films

Govindhan Dhanaraj, Yi Chen, Hui Chen, William M. Vetter, Hui Zhang, and Michael Dudley

The Formation Mechanism of Carrot Defects in SiC Epifilms Hui Chen, Guan Wang, Yi Chen, Xiaoting Jia, Jie Bai, and Michael Dudley

Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer

Hui Chen, Balaji Raghothamachar, William Vetter, Michael Dudley, Y. Wang, and B.J. Skromme

High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers

Isaho Kamata, Hidekazu Tsuchida, William M. Vetter, and Michael Dudley

Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy

Kendrick X. Liu, Robert E. Stahlbush, Joshua D. Caldwell, Karl D. Hobart, Francis J. Kub, and Joseph J. Sumakeris

Optical, Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC

Joshua David Caldwell, Paul B. Klein, Orest J. Glembocki, Robert E. Stahlbush, Kendrick X. Liu, Karl D. Hobart, and Fritz Kub

Dislocation-Related Etch Protrusions Formed on 4H-SiC (000-1) Surfaces by Molten KOH Etching

Masahide Gotoh, Takeshi Tawara, Shun-ichi Nakamura, Tae Tamori, Yoshiyuki Kuboki, Yoshiyuki Yonezawa, and Masaharu Nishiura

ELECTRICAL ÄND OPTICAL CHARA CTERIZA TION

Characterization of Semi-Insulating SiC Nguyen Tien Son, Patrick Carlsson, Björn Magnusson, and Erik Janzen

*Invited Paper

viu

•V

Deep Levels and Compensation in High Purity Semi-Insulating 4H-SiC 213

W.C. Mitchel, W.D. Mitchell, H.E. Smith, W.E. Carlos, and E.R. Glaser

Intrinsic Defects in High Purity Semi-Insulating 6HSiC 219

D.V. Savchenko, E.N. Kalabukhova, S.N. Lukin, Tangali S. Sudarshan, Yuri I. Khlebnikov, William C. Mitchel, and S. Greulich-Weber

Electrical Measurement of the Vanadium Acceptor Level in 4H- and 6H-SiC 225

William C. Mitchel, William D. Mitchell, H.E. Smith, M.E. Zvanut, and Wonwoo Lee

A Study of V3+/4+ Levels in Semi-Insulating 6H-SiC Using Optical Admittance and Electron Paramagnetic Resonance Spectroscopies 231

Wonwoo Lee and Mary E. Zvanut

Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2 237

Anna Cavallini, Antonio Castaldini, Filippo Nava, Paolo Errani, and Vladimir Cindro

Deep Levels in As-Grown and Electron-Irradiated P-Type 4H-SiC 247

Katsunori Danno and Tsunenobu Kimoto

Spectral Characterization of Persistent Photo Conductance in SiC 253

Steven R. Smith, Andrew Evwaraye, and William Mitchel

SIMS Analysis of Nitrogen in Silicon Carbide Using Raster Change Technique 259

Larry Wang and Byoung-Suk Park

Characterization of SiC Materials and Devices by SIMS 263 Yupu Li and Yumin Gao

*lnvited Paper

ix

SURF ACE, MEMS, AND SENSORS

* Atomic Structure of Non-Basal-Plane SiC Surfaces: Hydrogen Etching and Surface Phase Transformations

Serguei Soubatch, Wai Y. Lee, Martin Hetzel, Chariya Virojanadara, Camilla Coletti, Stephen E. Saddow, and Ulrich Starke

Development of PECVD SiC for MEMS Using 3MS as the Precursor

Jiangang Du, Neha Singh, James B. Summers, and Christian A. Zorman

Thermal Detection Mechanism of SiC-Based Resistive Gas Sensors

Timothy J. Fawcett, Meralys Reyes, Anita Lloyd Spetz, Stephen E. Saddow, and John T. Wolan

The Formation of Smooth, Defect-Free, Stoichiometric Silicon Carbide Films From a Polymerie Precursor

Michael Pitcher and Patricia Bianconi

Perchlorosilanes and Perchlorocarbosilanes as Precursors to Silicon Carbide

Vladimir Sevastyanov, Yurij Ezhov, Roman Pavelko, and Nikolaj Kuznetsov

DEVICE PROCESSING

Ion Implanted p+/n 4H-SiC Junctions: Effect of the Heating Rate During Post Implantation Annealing

Roberta Nipoti, Alberto Camera, Fabio Bergamini, Mariaconcetta Canino, Antonella Poggi, Sandro Solmi, and Mara Passini

Impact of EBAS Annealing on Sheet Resistance Reduction for Al-Implanted 4H-SiC(0001)

Masami Shibagaki, Akihiro Egami, Akira Kumagai, Kenji Numajiri, Fumio Watanabe, Shigetaka Haga, Kuniaki Miura, Shingo Miyagawa, Naohiro Kudoh, Tomoyuki Suzuki, and Masataka Satoh

*lnvited Paper

x

Laser Endotaxy and PIN Diode Fabrication of Silicon Carbide 323

Zhaoxu Tian, Nathaniel R. Quick, and Aravinda Kar

Control of Trenching and Surface Roughness in Deep Reactive Ion Etched 4H and 6H SiC 329

Glenn M. Beheim and Laura J. Evans

Time-Dependent Bias Stress-Induced Instability of SiC MOS Devices 335

Aivars Lelis, Daniel Habersat, Fatimat Olaniran, Brian Simons, James McGarrity, F. Barry McLean, and Neil Goldsman

Growth of Epitaxial and y-Al203 Dielectrics on 4H-SiC 341 Carey M. Tanner, Jun Lu, Hans-Olof Blom, and Jane P. Chang

Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application 347

D.O. Stodilka, A.P. Gerger, M. Hlad, P. Kumar, B.P. Gila, R. Singh, CR. Abernathy, S.J. Pearton, and F. Ren

Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces 353

Karsten Henkel, Mohamed Torche, Rakesh Sohal, Carola Schwiertz, Patrick Hoffmann, and Dieter Schmeißer

Simultaneous Formation of Ohmic Contacts for Both N- and P-Type 4H-SiC Using NiAl-Based Contact Materials 359

Susumu Tsukimoto, Toshitake Onishi, Kazuhiro Ito, and Masanori Murakami

Ti/AlNi/W Ohmic Contacts to P-Type SiC 365 Bang-Hung Tsao, Jacob Lawson, and James Scofield

TiW/TiWN/Pt Ohmic Contacts to n-Type 3C-SiC 371 Kirk Hofeling, Loren Rieth, and Florian Solzbacher

Thermal Interactions of Ni on Stepped 6H-SiC Surfaces: Implications for Thin Film Microstructure 377

Andrew A. Woodworth, Srikanth Raghavan, and Charter D. Stinespring

X I

Demonstration of Hybrid Silicon-on-Silicon Carbide Wafers and Electrical Test Structures With Improved Thermal Performance

Steven G. Whipple, John T. Torvik, Randolph E. Treece, and Jeffrey T. Bernacki

ELECTRONIC AND OPTOELECTRONIC DEVICES

* 950V, 8.7 rallcm2 High Speed 4H-SiC Power DMOSFETs Sei-Hyung Ryu, Charlotte Jonas, Bradley Heath, James Richmond, Anant Agarwal, and John Palmour

Reliability of High Voltage 4H-SiC MOSFET Devices Sumi Krishnaswami, Sei-Hyung Ryu, Bradley Heath, Anant Agarwal, John Palmour, Aivars Lelis, Charles Scozzie, and James Scofield

Vertical MOSFET Devices Fabricated on 3C-SiC With High and Low Material Quality

Adolf Schoner, Mietek Bakowski, Per Ericsson, Helena Stromberg, Hiroyuki Nagasawa, and Masayuki Abe

Development of a 4H-SiC CMOS Inverter Brett A. Hüll, Sei-Hyung Ryu, Husna Fatima, Jim Richmond, John W. Palmour, and James Scofield

1.8 kV, 10 milcm2 4H-SiC JFETs 41 James D. Scofield, Sei-Hyung Ryu, Sumi Krishnaswami, Husna Fatima, and Anant Agarwal

High Power SiC MESFETs Christopher Ian Harris, Andrei O. Konstantinov, Jan-Olov Svedberg, lan Ray, and Christer Hallin

Degradation of Current Gain in SiC BJTs Anant Agarwal, Sumi Krishnaswami, James Richmond, Craig Capell, Sei-Hyung Ryu, John Palmour, Kenneth Jones, and Charles Scozzie

Fabrication and Characterization of 5 kV IGBTs on 4H-SiC Charlotte Jonas, Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, and John Palmour

*Invited Paper

XII

Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes 443

Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, Ferdinando Portuese, Lucia Calcagno, and Gaetano Foti

Comparison of Parameter Extraction Techniques for SiC Schottky Diodes 449

Ming H. Weng, Alton B. Horsfall, Nick G. Wright, Konstantin V. Vassilevski, and Irina P. Nikitina

Laser-Patterned Blue-Green SiC LED 455 Sachin M. Bet, Nathaniel R. Quick, and Aravinda Kar

Author Index 461

Subject Index 465

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