Silicon Carbide Detectorsfor Intense Luminosity Investigations and Applications

CALL presentata nell’ambito della CSN5, anni 2016-2018

SiCILIA

Luca Labate

Istituto Nazionale di Ottica – CNR, Pisaand INFN, Sezione di Pisa

SiCILIA

Active area 1 cm2 E stage thickness ≥ 100 m E stage thickness 500 ÷ 1000 m

Epitaxial growth SIC:beyond the state of the art

New Tecnology p-n junctions SiC

SiC E-E telescopes

Radiation Hard detectors for Nuclear Physics experiments and Nuclear applications

E a

mp

litu

de

(a.u

.)

E amplitude (a.u.)

Ion identification

Know how transfer

From the proposal Requirements for next generation nuclear physics experiments at high luminosity (E/E ~1/1000, m/m~1/200, t~0.1o), very low cross sections → high fluxes, exceeding those tolerated by state of the art solid state detectorsSimilar requirements are encountered in laser-driven proton/ion acceleration, where also the insensitivity to visible light would be an assetSilicon carbide offers an ideal response to such challenges

Wide bandgap (3.3eV) lower leakage current than silicon Signal (for MIP !): Diamond 36 e/m SiC 51 e/m Si 89 e/m more charge than diamond Si/SiC≈2

Higher displacement threshold than silicon

radiation harder than silicon

M.Moll , NIM in Physics Research A 511 (2003) 97–105

NUMEN project NUclear Matrix Elements of Neutrinoless Double Beta Decays by Heavy Ion Double Charge Exchange Reactions

DCE => 12C, 18O, 20Ne to energies between 15 and 30 MeV/u

Applications

MAGNEX

1 cm2 E-E telescope

European initiative for a next-generation charged particle array

FAZIA Collaboration

Radiation hard telescopes for heavy-ion induced reactions around and below the Fermi energy (10-100 AMeV). The project aim is to build a 4Pi array for charged particles, with high granularity and good energy resolution, with A and Z identification capability

-NPDetectors working in plasmas environment

TDR1-Laser Driven Nuclear Physics

Requirements Radiation Hardness Timing Insensitivity to the visible radiation X-ray sensitivity Neutron sensitivity (ITER, ESS, etc.) Nuclear reactions in Laser plasmas @ ELI-NP

ELIMED concept

ELI-Beamlines MEDical and multidisciplinary applications

Applications

SiC detector construction: state of art

Schottky diodes on epitaxyal layer grow onto high-purity 4H–SiC n- type substrate

Active thickness ~ 80 m 4H-SiC bulk ~ 250 m Active Area ~ 2x2 mm2

SiCILIA 1 cm2 E-E telescope thickness of E stage ≥ 100 m thickness of E stage 500 ÷ 1000 m

Istituto per la Microelettronica e Microsistemi

Deliverables

SiCILIASiCILIA

WP4: G.GoriniNeutrons

Irradiation and test

WP4: G.GoriniNeutrons

Irradiation and test

WP5: D. GiovePhoton detection and spectroscopy

WP5: D. GiovePhoton detection and spectroscopy

WP6: G.PasqualiIons identification:

Pulse shape discrimination

WP6: G.PasqualiIons identification:

Pulse shape discrimination

WP1: S.Tudisco Design studies

and test

WP1: S.Tudisco Design studies

and test

WP2: F. La ViaMaterial Study

and devicesconstruction

WP2: F. La ViaMaterial Study

and devicesconstruction

WP3: G.CirroneIons and electrons

irradiation

WP3: G.CirroneIons and electrons

irradiation

CNR-IMM Catania

Tests @CNR-INO Pisa

FBK Trento ST-Microelectronics

Work packages organizationWP1 – Project coordinator and management

Tests @CNR-INO Pisa

Risultati 2016

- Definizione delle specifiche rivelatori WP1,WP2

Simulazioni

- Definizione processo di realizzazione rivelatori WP2, WP1, WP5, STM, FBK

Definizione processo di epitassia: Caratterizzazione processo e resa ipotetica

Definizione strutture di bordo: Giunzione P+/N, Diodi Schottky

Lay-out e definizione del processo di realizzazione: Giunzioni P+/N, Diodi Schottky

- Allestimento set-up per caratterizzazioni WP2, WP5

Realizzazione dei dispositivi

- Test su diodi commerciali e vecchi dispositivi WP5, WP1, WP6

- Preparazione linee di irraggiamento WP3, WP4

- Test di dispositivi di confronto WP4

Test e preparazione dei set-up di misura

People FTE 2017Giancarlo Bussolino 0.8Luca Labate 0.5

Milestones 2018

WP1 – Caratterizzazione test e ottimizzazione dei prototipi - Design and construction del dimostratore SiC-Wall

WP2 - Characterization dei prototipi - Ottimizzazione and realizzazione dei dispositivi finali

WP3 - Irragiamenti ai LNS - Irraggiamenti al LINAC di Messina - Test sperimentali in laser-driven facilities (tra cui ILIL-INO-CNR)

Wp4 - Installazione di prototipi SiC al JET fusion reactor

Wp5 - Caratterizzazione X-Ray spectroscopy dei prototipi SiC

Wp6 - Studio dei prototipi di SiC single pads e telescopi con fasci ionici.

Pisa activity in 2017 (partial overlapping with L3IA activity)

- Design and construction of the proton test beamline @ILIL-PW (collaboration with LNS)- Test of “old” SiC detectors (next test with SiC detectors developed in the framework of SiCilia foreseen in 2 weeks from now)

Pisa foreseen activity in 2018

- Test of SiC detectors (2-3 experimental campaigns)

Richieste 2017

Pisa: Consumi (consumabili laser) → 3 kEuroInventario (translation stages) → 5 kEuro