realizarea fizică a dispozitivelor...
TRANSCRIPT
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Curs 11
2014/2015
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Examen◦ 10.12.2013, P7
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Behzad Razavi Design of Integrated Circuits for Optical Communications
carte1.pdf (2,3)
29 pg.
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Amplificatoare transimpedanţă◦ 4.1◦ 4.1.1◦ 4.2◦ 4.2.1◦ 4.3◦ 4.3.1
Circuite pentru controlul emiţătoarelor optice◦ 10.3◦ 10.3.1◦ 10.4◦ 10.4.1
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Capitolul 9
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gg
E
hchE ;
h constanta lui Plank 6.62·10-32 Ws2
c viteza luminii in vid2.998·108m/s
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La un material cu 4 nivele energetice tranzitiaradianta a electronului (3) se termina intr-o stare instabila, starea de echilibru obtinandu-se prin emisia unui fonon
Inversiunea de populatie se obtine mult maiusor datoritaelectronilor din stareaintermediara
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Definirea directiilor in dioda LASER
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Ln
ckfk
2
0
Ln
cf
2
0
Ln
2
20
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Erbidium Dopped Fiber Amplifier
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Capitolul 10
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Cerinte◦ eficienta crescuta a conversiei optic/electric◦ zgomot redus◦ raspuns uniform la diferite lungimi de unda◦ viteza de raspuns ridicata◦ liniaritate
Principii de operare◦ fotoconductori◦ fototranzistori◦ fotodiode pn
pin
pin cu multiplicare in avalansa
Schottky
oPRR
oBB PII
oPII
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Principiu
Recent dispozitive Metal Semiconductor Metal (filtru interdigital) au inceput sa fie utilizatepentru usurinta de fabricare si integrare in aplicatii mai putin pretentioase
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Jonctiunea pn estepolarizata invers
Lumina este absorbitain regiunea golita de purtatori, un fotonabsorbit generand o pereche electron-gol
Sarcinile sunt separate de campul electric existent in regiunea golita si genereazaun curent in circuitul exterior
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Energia necesara pentru eliberarea uneiperechi electron gol
Lungime de unda de taiere
Puterea optica absorbita in zona golita de purtatori (w) aflata la o adincime d in interiorul dispozitivului
gEhc
h
gE
hcmax
fwd
i ReePwP 11
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Coeficientul de absorbtie pentru materialeleuzuale
Valoarea mare a coeficientului de absorbtiela lungimi de unda reduseimplica scaderearesponzivitatii
Ca urmare comportareatuturor materialelor estede tip trece banda
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Eficienta cuantica - raportul dintre numărul de perechi electron-gol generate şi numărul de fotoni incidenţi
In unitatea de timp numarul de fotonidepinde de puterea optica, iar numarul de electroni impune curentul generat
Responzivitatea
f
e
n
n
hP
eI
hc
e
P
IR
o
W
AmR 8.0
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hc
e
P
IR
o
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Dezavantajul major pentruGe este curentul de intuneric mare
Material Eg (eV )
GaAs 1.43
GaSb 0.73
GaAso.88Sbo.12 1.15
Ge 0.67
InAs 0.35
InP 1.35
Ino.53Gao.47As 0.75
Ino.14Gao.86 As 1.15
Si 1.14
Material λ [μm] Responsivitate [A/W] Viteza [ns] Curent de intuneric
Si 0.85 0.55 3 1
Si 0.65 0.4 3 1
InGaAs 1.3-1.6 0.95 0.2 3
Ge 1.55 0.9 3 66
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Curentul invers al jonctiunii p-n, datoratagitatiei termice, prezent in absentailuminarii
Constituie o importanta sursa de zgomot(limiteaza aplicatiile Ge)
◦ β – coeficient de idealitate
◦ R0 – rezistenta la intuneric a diodei (inversproportionala cu aria diodei)
0eR
kTII SD
21
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Existenta campului electric in regiuneagolita de purtatori face ca eventualiipurtatori generati optic sa fie acceleratispre terminale pentru constituireafotocurentului
Problemele utilizarii diodei pnpolarizate invers ca fotodetector suntgenerate de adancimea extrem de mica a zonei golite (w)
Puterea optica absorbita in interiorul acestei zone e in consecinta redusa
Puratorii generati inafara zonei de golire ajung eventual in zona golita si vor fi accelerati spre terminale, darviteza fenomenului este prea redusa pentru aplicatii in comunicatii
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Solutia consta in introducerea unui stratfoarte slab dopat (intrinsec) intre cele douazone ale diodei
◦ creste volumul de absorbtie deci crestesensibilitatea fotodiodei
◦ capacitatea jonctiuniiscade ducand la crestereavitezei
◦ este favorizat curentul de conductie (mai rapid) fatade cel de difuzie
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tipic, adancimea stratului intrinsec este de 20-50μm
cresterea suplimentara a adancimii ar duce la creterea timpului de tranzit◦ w=20μm -> Ttr 0.2ns
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se bazeaza pe jonctiunea metal semiconductor
vitezele de lucru sunt mult mai mari, metalulfiind un bun conductor realizeaza evacuareamult mai rapida a purtatorilor din jonctiune
permite utilizarea unor materiale cu eficientamai mare dar care nu pot fi dopate simultan p si n pentru utilizare in PIN
modulatie cu 100GHzposibila
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se utilizeaza tipic◦ InGaAsP pe substrat InP
◦ GaAlAsSb pe substrat GaSb
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daca viteza purtatorilor este suficient de mare genereaza noi perechi electron/gol prinionizare de impact
amplificarea are loc in acelasi timp cu detectia
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campuri electrice de ordinul minim: 3x105
V/m, tipic: 106 V/m sunt necesare
aceste campuri sunt generate de tensiuniinverse de polarizare de ordinul 50-300V
structura este modificata pentru concentrareacampului in zona de accelerare
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factorul de multiplicare caracterizeazaamplificarea fotocurentului generat
Responzivitatea
I
IM M
Mhc
e
P
IR
o
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tensiuni inverse de polarizare mari cresccomplexitatea circuitului
diodele cu multiplicare in avalansa suntintrinsec mai zgomotoase (curentul de zgomot este amplificat de asemenea)
factorul de multiplicitate are o componentaaleatorie (zgomot suplimentar)
viteza mai redusa (timp de generare al avalansei)
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Capitolul 11
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LED◦ este considerat o sursa lipsita de zgomot
◦ nu contamineaza semnalul cu zgomot suplimentar
Dioda LASER◦ fluctuatii de faza, determina o largire a spectrului
emis
◦ fluctuatii de intensitate, determina zgomotul de intensitate introdus de dioda
◦ RIN – Relative Intensity Noise
BWP
PHzRIN
n
2
2
]/1[
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reprezinta o densitate spectrala de zgomot◦ puterea de zgomot depinde de RIN si de banda
semnalului
Depinde de puterea semnalului◦ P-3 la puteri mici, P-1 la puteri mari
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oscilatii de relaxare – x GHz
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Equivalent Input Noise◦ Ri – rezistenta de intrare in circuitul de modulatie a
diodei
◦ Variatiile de putere (zgomot) echivalente unorvariatii de curent (zgomot) prin dioda
22
nn IrP
2][ ni IRWEIN 1 Hz banda
ith RIIRINHzWEIN 2
0]/[
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NEP◦ Noise Equivalent Power
◦ r – responzivitatea diodei
◦ r depinde de λ, implica NEP depinde de λ
◦ In cataloage apare de obicei densitatea spectrala
r
dfiWNEP
n
2
][
PD
n
BW
NEP
r
iHzWNEP
2
]/[
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NEP◦ cea mai mica putere detectabila
PDdarkSPDn BWIIeBWIei 222
PDdark
n
BWIerr
iP 2
1min
2
min
darkIer
HzWNEP 21
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Bit Error Rate
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01
01
iIIiQ DD
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