pzt thin-film processing technology for piezo-mems ... · ev charger smart building power plants...

PZT Thin-film Processing Technology for Piezo-MEMS Manufacturingg

Koukou SuuULVAC, Inc.

Copyright ©2014,ULVAC,Inc.All rights reserved

Institute of Institute of Semiconductor and Semiconductor and

Electronics Technologies Electronics Technologies ISETISET M2M Forum, May 21, 2014, Koukou SuuPage 1

Outline

1. Megatrend - “Smart Society”1. Megatrend Smart Society

➢“Smart Phone” as a Key Enabler of “Smart Society” y y

2. Enabling Technologies for “Smart Phone”

➢ Piezo-MEMS to Enable Advanced Functionality

3. ULVAC’s Manufacturing Solution for Piezo-MEMS Devices

4. Summary




Megatrend – “Smart Society”by “Smart Information & Smart Communication”

Cloud Computing

(Smart Communication)

Home Network

(Smart Home)( ) ( )Cloud PowerInformation

Home NetworkInternet

New ICT (Information and Communication Technologies) such asInternet

Ubiquitous (Mobile) Devices

New ICT (Information and Communication Technologies) such as “Cloud computing” and “Ubiquitous network” are realizing “whenever, wherever, high-speed, high-volume, safe and secured,




low-power-consumption, wireless” SMART SOCIETY.

Megatrend – “Smart Society” by “Smart Energy”I f ti d C i ti T h l (ICT)

Smart CityInformation and Communication Technology (ICT)

Smart Grid

EV Charger

Smart BuildingPower Plants

EnergySolar Cell

Smart

Energy Storage

EVSmart Home

SmartMeterPV

“Energy-saving, resource-saving, disaster-resistant, renewable, safe and clean” New Energy Technologies integrated with New ICTare realizing “SMART ENERGY” thus “SMART SOCIETY”




are realizing SMART ENERGY thus SMART SOCIETY .

Key Enabling Technologies for Smart PhoneGyro/Acceleration sensor Tunable device

Micro mirror(Pananonic Inc )(Pananonic,Inc.)

Auto Focus lens

MEMS microphoneFront Display etc.(Jian Cai ,etc. Tsinghua Uni.)

(poLight,Inc.)f

New material(Ferroelectrics), Thin films

Yole Development 2011 with modification




Piezo-MEMS and PZT Films

Piezoelectric effectInversed

Piezo-MEMS applications basing on Piezoelectricity

Pb(Zr,Ti)O3 (PZT) Piezoelectric effectForce => Electric charge

Force

Piezoelectric effectVoltage => Displacement

Displacement01)

( , ) 3 ( )

＋

Displacement

-axi

s (0

0

Force－

Displacementa-axis (100)

c-

a axis (100)

:Pb2+ :O2- :Zr4+/Ti4+

Sensor / Energy Harvestor ActuatorPZT is the best material to realize high-performance Piezo-MEMS




PZT is the best material to realize high-performance Piezo-MEMS

Key Technologies and Technical Challenges forPiezo-MEMS Manufacturing g

ResistResistPatterningPatterning

ElectrodeElectrodeSputteringSputtering

Advanced PZT Advanced PZT SputteringSputtering

PZTPZTEtchingEtching


Pt/Ti

PatterningPatterningPt

PZT PZT

SputteringSputtering SputteringSputtering EtchingEtching

PZTPZT

SputteringSputtering

SiO2/Si Sub.

SiO2/Si Sub.

SiO2/Si Sub.

SiO2/Si Sub.

SiO2/Si Sub.

◆Key TechnologiesPZT S tt i Pl Et hiPZT Sputtering, Plasma Etching

◆Technical Challenges1. How to Realize Reliable PZT Sputtering?2. How to Obtain High-performance PZT Film?3 H t F b i t PZT Pi MEMS D i ?




3. How to Fabricate PZT Piezo-MEMS Device?

PZT-film-based Piezo-MEMS

Gyro /Accelerometer

MEMS Lens

Device Smart Phone

Material Pb(Zr,Ti)O3

Requirements1.High Reliable Manufacturability

2.High Piezo-performance

Solutions

1. Reliable PZT Sputtering Module 2. High Oriented PZT film Sputtering Process

Solutions3. Reliable PZT Capacitor Etching Module

4. High Selectivity and Uniformity Etching Process




1. How to Realize Reliable PZT Sputtering ULVAC Original Reliable PZT Sputtering Module

(b) Novel Sputtering Module(a) Conventional Sputtering Module

SSDM2012

SolutionsIssues*Patent: US6521105, EU, JP, KR, CH, TW

High density targetNew cathode design C t l f hi ld t ti l

Target crack (Low density, Arc)Arc on shield (For charge up on shield)B d t bilit (F h hi ld) Control of shield potential

Novel anode adoption (Good reliability) New wafer stage (Good uniformity)

Bad stability (For charge up on shield)Composition gap of volatile materialBad Uniformity (WIW, WTW)


Electronics Technologies Electronics Technologies ISETISET Page 9 M2M Forum, May 21, 2014, Koukou Suu


g ( y)De-facto Standard Manufacturing Tool for Non-volatile memory and MEMS devices.

1. How to Realize Reliable PZT Sputtering Repeatability Comparison

1.5 1.5

u.)

(b) Novel Sputtering Module(a) Conventional Sputtering Module

1.0

tent

(a.u

.)

1.0

nten

t (a.

u

0.5Pbco

nt

RF power: 2.0 kWAr pressure: 1 0 Pa

0.5Pb c

o

RF power: 2.0 kWAr pressure: 1 0 Pa

00 2 4 6 8 10

Sputtering time (hour)

Ar pressure: 1.0 PaDeposition time: 6 min

00 2 4 6 8 10


00 2 4 6 8 10


Ar pressure: 1.0 PaDeposition time: 6 min

Solution;

Sputtering time (hour)Sputtering time (hour) Sputtering time (hour)

Solution;Shield; Potential control & Novel AnodeStage; Potential control & High efficient cooling stage




g ; & g g g

1. How to Realize Reliable PZT Sputtering Repeatability of PZT Sputtering Process @8inch

12 06 0 4 01 6Deposition rate Pb composition

8 0

10.0

12.0

4 0

5.0

6.0

±%)

(µm

/h)

3.0

4.0

1.2

1.4

1.6

(±%

)

ent (

a.u)

◆PZT thickness:2 µm◆Target Life Total:400 wafers

◆PZT thickness:2 µm◆Target Life Total:400 wafers

4 0

6.0

8.0

2 0

3.0

4.0

mity

; WIW

(±

osito

n R

ate

2.0

0.6

0.8

1.0

rmity

; WIW

(

zed

Pb

cont

e

WTW: ±1.4% WTW: ±0.6%

0.0

2.0

4.0

0.0

1.0

2.0

Uni

form

Dep

o

0.0

1.0

0.0

0.2

0.4

Uni

for

Stan

dard

iz

<±3%

<±0.6%

0 100 200 300 400Number of 2µm-PZT wafers (pcs)

0 100 200 300 400Number of 2µm-PZT wafers (pcs)

◆PZT Target Life : 400pcs ◆PZT Target Life : 400pcs◆PZT Target Life : 400pcs◆Deposition Rate (WTW) : ±1.4%◆Deposition Rate (WIW) : <±3.0%

◆PZT Target Life : 400pcs◆Pb content (WTW) : ±0.6%◆Pb content (WIW) : <±0.6%




2. How to Obtain High-performance PZT FilmPZT Film Crystalline Orientation Control

111)

0) PZT(001)/(100) 12.0

Measurement Freq.; 250 HzCantilever length ; 25.5 mm

※Young’s Module of PZT film:70GPa

a.u)

Pt(1

111)

T(00

1)/(1

0

002)

/(200

)( ) ( )preferably oriented

8.0 nt (μ

m)

e31= -12.9 C/m2

(d31=-184 pm/V)

※Young s Module of PZT film:70GPa

tens

ity (a

PZT(

1

PZT

PZT(

0

4 0

8 0

acem

en

Int

PZT(111) preferably oriented 0 0

4.0

Dis

pl

e31= - 7.8C/m2

(d31=-111 pm/V)

20 25 30 35 40 45 50

preferably oriented 0.0 0 10 20 30 40

Applied Vpp (V)

Piezoelectric coefficient e31,f of PZT(001)/(100) preferably orientedis twice larger than that of PZT(111) preferably oriented

2theta (deg.)pp




is twice larger than that of PZT(111) preferably oriented.

2. How to Obtain High-performance PZT FilmToward Higher PZT Performance

250V) (C

/m2 )25

PZT@2 µm200

tage

(V

nt |e

31| (20

17 2 17 3

99100

150

wn

Volt

coef

ficie

10

15

14.7

17.2 17.3

12 9

30 3161

50

100

eakd

ow

lect

ric c10

5

12.9

30 31

0

50

Bre

Piez

oel

0

5

We also can provide advanced process:

0 process.#2

process.#3

process.#4

process.#1




higher piezoelectric constant and higher breakdown voltage.

2. How to Obtain High-performance PZT Film Electric Fatigue of 2.0 µm-PZT film

1 6

1.8

2.0

x (a

.u)

Conventional Process

1.2

1.4

1.6 tio

n;Pm

ax

Advanced Process

0.8

1.0

Pola

rizat

0.2

0.4

0.6

orm

aliz

ed

0.0

0.2

1E+0 1E+1 1E+2 1E+3 1E+4 1E+5 1E+6 1E+7 1E+8 1E+9 1E+101E+11

No

CyclesProcess Condition Cycles

Conventional 0 to +30 V @100kHz 2E+7Advanced 0 to +30 V @100kHz Up to 4E+10




Advanced 0 to +30 V @100kHz Up to 4E+10

3. How to Fabricate PZT Piezo-MEMS DevicePiezo-MEMS Etching Module

ISM(inductively Super Magnetron)

STAR ELECTRODERF Antenna

Permanent magnet

High Density Plasma L P O ti Low Pressure Operation High Etching Uniformity

ESC StageWafer

The most important feature of Etching module is the so called “ STAR ELECTRODE” which is necessary to realize process




y prepeatability.

3. How to Fabricate PZT Piezo-MEMS DeviceEtching Repeatability

1.4 1.5

e 200nm-Ir film Etching

Rat

e

1.11.2 1.3

tch

Rat

e

RF導入窓デポ抑制機構あり

g

with “STAR Electrode”chin

g R

0 80.9 1.0 1.1

mal

ized

E RF導入窓デポ抑制機構あり

zed

Etc

0.6 0.7 0.8

Nor

m

RF導入窓デポ抑制機構なしwithout “STAR Electrode”

Nor

mal

iz

0.5 0 5 10 15 20 25

ウエハ枚数[wafers]

抑

Wafers

N

ウエハ枚数[wafers]Wafers

The advantage of our tool with “STAR Electrode” is f




repeatability of stable Ir metal etching.

3. How to Fabricate PZT Piezo-MEMS DeviceSmart Process

204060

μC/c

m2 )

51015

t (nm

)PD

φ50 µm

40-20

020

rizat

ion

(μ

10-505

plac

emen

t

-60-40

-150 -100 -50 0 50 100 150Applied field (kV/cm)

Pola

r

-15-10

Dis

p

Selectivity vs. BE pp ( )

Film SelectivityPZT(sputter) to PR 0.45

y

PZT(sputter) to Pt 50

Material Etch Rate(nm/min)

UniformityE.E.10mm(%)

Wafer Size(inch)( ) ( ) ( )

Pt 160 ≦±5 8PZT 170 ≦±5 8

U if it d Hi h l ti it hi d b S t P




Uniformity and High-selectivity are achieved by Smart Process.

ULVAC’s Manufacturing Solution forPiezo-MEMS Devices

ResistResistpatterningpatterning

Pt


Advanced PZT Advanced PZT SputteringSputtering

PZTPZTetchingetching


Pt/Ti

Pt

PZT PZT PZTPZT

SiO2/Si Sub.

SiO2/Si Sub.

SiO2/Si Sub.

SiO2/Si Sub.

SiO2/Si Sub.

SMESME--200 series200 series NENE--SeriesSeries




Summary

ULVAC has Established Mass Production Capability

as well as Advanced Process Capability on bothas well as Advanced Process Capability on both

PZT Thin-film Sputtering and Etching Technologies.

We therefore can Provide Manufacturing Solution

for Piezo MEMS Devices which is becoming a mostfor Piezo-MEMS Devices, which is becoming a most

Important Key Enabler of Our Modern “Smart Society.”




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