production and regional center at ncu, taiwan

National Central University

Production and Regional Production and Regional Center at NCU, TaiwanCenter at NCU, Taiwan

W.T. Lin

Department of Physics


Chung-Li, Taiwan

CMS-PreShower-PRRCMS-PreShower-PRR


Production at ERSO, Hsin-ChuProduction at ERSO, Hsin-Chu

After the PHOBOS’ sensors production, ERSO’s production line had been re-modified.

• Mar. 2000 Integration completed

• Apr. 2000 PE aligner installed

• Jul. 2000 Machine warmed up

• Sep. 2000 R&D runs began

Capacity : 1000 wafers per month


PHOBOS vs. CMS PreshowerPHOBOS vs. CMS Preshower

• Tracker vs. Preshower

• 6 masks vs. 4 masks

AC vs. DC, Double metal vs. single metal• Itotal < 5 A @ Vfd

Itotal @100 V < 10 A vs. Itotal@300V < 10 A

• Completed vs. On going project

• 450 sensors vs. 1200 sensors


PHOBOS Sensor TechnologyPHOBOS Sensor Technology

Double Metal,Single sided,AC coupled,Polysilicon biased

metal 1metal 1metal 2metal 2

p+ Implant

n+

Polysilicon Drain Resistor

bias bussignal lines

vias

300m 5000kcm

0.2um ONO1.2um ONO

Thin ONO Thick ONO PN junction Polysilicon


IV curve of PHOBOS sensorIV curve of PHOBOS sensor

More than 450 wafers have been delivered.

5A

Vfd=60V


Preshower Detector LayoutPreshower Detector Layout

63 mm

Test key Silicon Detector


Structural DrawingStructural DrawingPassivation

N+ layer

Metal

P+ strip i-type substrateField oxide

Metal Strip


CMS Si-Sensor R&DCMS Si-Sensor R&D

• Depth of p+ and n+ : 3, 5, and 14 m

• Thickness of Al :1.2 m

• Passivation : nitride + oxide 1.2 m

n+

p+

n type (1,1,1)320m

Al Passivation


Pilot runs & Pre-productionsPilot runs & Pre-productions

Date batch# wfrs

10/27 90074 12

10/28 90075 12

1/15 90074A 12

3/2 90075A 12

3/16 00017 12

3/2 00018 12

Date batch# wfrs

6/5 cms01 24

6/5 cms02 24

6/15 cms03 24

6/18 cms04 24

6/18 cms05 24

6/15 cms06 24


Summary of IV/CV testsSummary of IV/CV tests Date batch# depth of n+ majority I@V>Vfd

6/5 cms01 14 m 50-150 nA/strip

6/5 cms02 50-150 nA/strip

6/15 cms03 5 m 100-150 nA/strip

6/18 cms04 50-100 nA/strip

6/18 cms05 3 m 250-350 nA/strip

6/15 cms06 300-400 nA/strip

• More than one strip have high leakage current that sensor can not be accepted.• 20 accepted sensors : 17 from 03 and 04, 3 from 01 and 02• 23oC, Cstrip=38 - 42 pF, Vfd= 80 - 120 V


Flow Chart of TestingFlow Chart of Testing1) Sensor received

2) Visual scan

3) Pre-screening : CV, IV

4) sensor dicing

5) Select good sensor for assembly : CV, IV

• Write to the data base during the test

• CV+IV measurement takes about 20 min/wfr


Wafer DicingWafer Dicing

45o down viewDiamond saw : 30 m

Spinning : 35K rpm

Speed : 40 mm/sec

210m 300m

35m

Side view IV curves unchanged after dicing

P+/top side


Production PlansProduction Plans

Milestone of delivery

• Jun 2001 20 pcs

• Dec 2001 130 pcs

• Jun 2002 150 pcs

• Jan 2003 900 pcs

ERSO capacity : 1000 wfrs/month


Equip. for Tests & AssemblyEquip. for Tests & Assembly

• Probe card, Switch board, HV isolation

• IV(K236), CV(K590), and HVps(K237)

• Single channel probe station

• Bonding machine (Kulicke Soffa 4123)

• Visual scan station

• Jigs will be ordered from CERN


Setup at Regional Lab.Setup at Regional Lab.

IV/CV meters

(NCU and ERSO)

Visual scan and Bondingmachine in 30 m2 clean room


Time consuming and ManpowerTime consuming and Manpower

• 150 working days for measurement :

(Base on 50% of yield, 20 min/wfrs, deliver 1200 wfrs)

• 2 technicians + 1 Ph.D. student

(extra technician + 2 master students will join when assembly starts)


SummarySummary

• IV/CV test benches have been set and tested at NCU and ERSO.

• CRISTAL data base has been set and tested.

• ERSO and Miracle co. are trying to improve the yield

production and regional center at ncu, taiwan

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