pesd5v0l7bas; pesd5v0l7bs low capacitance 7-fold bidirectional esd protection diode arrays · 2017....

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of [email protected] or [email protected], use [email protected] (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via [email protected]). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

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  • Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of [email protected] or [email protected], use [email protected] (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via [email protected]). Thank you for your cooperation and understanding,

    Kind regards,

    Team Nexperia

  • 1. Product profile

    1.1 General descriptionLow capacitance 7-fold bidirectional ESD protection diode arrays in small plastic packages designed for the protection of up to seven transmission or data lines from damage caused by ElectroStatic Discharge (ESD) and other transients.

    1.2 Features and benefits

    1.3 Applications

    1.4 Quick reference data

    PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arraysRev. 4 — 23 June 2010 Product data sheet

    Table 1. Product overviewType number Package

    Name NXPPESD5V0L7BAS TSSOP8 SOT505-1

    PESD5V0L7BS SO8 SOT96-1

    ESD protection of up to seven lines Ultra low leakage current: IRM = 3 nA Low diode capacitance ESD protection of up to 10 kV Max. peak pulse power: PPP = 35 W IEC 61000-4-2, level 4 (ESD) Low clamping voltage: VCL = 17 V IEC 61000-4-5 (surge); IPP = 2.5 A

    Computers and peripherals High-speed data lines Communication systems Parallel ports Audio and video equipment

    Table 2. Quick reference dataSymbol Parameter Conditions Min Typ Max UnitVRWM reverse standoff voltage - - 5 V

    Cd diode capacitance VR = 0 V; f = 1 MHz

    - 8 10 pF

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    2. Pinning information

    3. Ordering information

    4. Marking

    Table 3. PinningPin Description Simplified outline Graphic symbolTSSOP81 cathode 1

    2 cathode 2

    3 cathode 3

    4 cathode 4

    5 cathode 5

    6 cathode 6

    7 cathode 7

    8 cathode 8

    SO81 cathode 1

    2 cathode 2

    3 cathode 3

    4 cathode 4

    5 cathode 5

    6 cathode 6

    7 cathode 7

    8 cathode 8

    1 4

    8 58

    7

    6

    5

    1

    2

    3

    4

    sym005

    4

    5

    1

    88

    7

    6

    5

    1

    2

    3

    4

    sym005

    Table 4. Ordering informationType number Package

    Name Description VersionPESD5V0L7BAS TSSOP8 plastic thin shrink small outline package; 8 leads;

    body width 3 mmSOT505-1

    PESD5V0L7BS SO8 plastic small outline package; 8 leads; body width 3.9 mm

    SOT96-1

    Table 5. Marking codesType number Marking codePESD5V0L7BAS 5V07B

    PESD5V0L7BS 5V0L7BS

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 2 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    5. Limiting values

    [1] Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC 61000-4-5; see Figure 1.

    [1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.

    Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

    Symbol Parameter Conditions Min Max UnitPer diodePPP peak pulse power tp = 8/20 s [1] - 35 W

    IPP peak pulse current tp = 8/20 s [1] - 2.5 A

    Tj junction temperature - 150 C

    Tamb ambient temperature 65 +150 C

    Tstg storage temperature 65 +150 C

    Table 7. ESD maximum ratingsSymbol Parameter Conditions Min Max UnitVESD electrostatic discharge voltage IEC 61000-4-2

    (contact discharge)[1] - 10 kV

    MIL-STD-883 (human body model)

    - 10 kV

    Table 8. ESD standards complianceStandard ConditionsIEC 61000-4-2; level 4 (ESD); see Figure 2 > 8 kV (contact)

    MIL-STD-883; class 3 (human body model) > 4 kV

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 3 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    6. Characteristics

    [1] Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC 61000-4-5; see Figure 1.

    Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5

    Fig 2. ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2

    t (μs)0 403010 20

    001aaa630

    40

    80

    120

    IPP(%)

    0

    e−t

    100 % IPP; 8 μs

    50 % IPP; 20 μs

    001aaa631

    IPP

    100 %

    90 %

    t

    30 ns

    60 ns

    10 %

    tr = 0.7 ns to 1 ns

    Table 9. CharacteristicsTamb = 25 C unless otherwise specified

    Symbol Parameter Conditions Min Typ Max UnitPer diodeVRWM reverse standoff voltage - - 5 V

    IRM reverse leakage current VRWM = 5 V; see Figure 6 - 3 25 nA

    VCL clamping voltage IPP = 1 A [1] - - 11 V

    IPP = 2.5 A [1] - - 17 V

    VBR breakdown voltage IR = 1 mA 7.2 7.6 7.9 V

    rdif differential resistance IR = 1 mA - - 100

    Cd diode capacitance VR = 0 V; f = 1 MHz; see Figure 5

    - 8 10 pF

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 4 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    Tamb = 25 C

    Fig 3. Peak pulse power as a function of exponential pulse duration tp; typical values

    Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values

    Tamb = 25 C; f = 1 MHz

    Fig 5. Diode capacitance as a function of reverse voltage; typical values

    Fig 6. Relative variation of reverse leakage current as a function of junction temperature; typical values

    001aaa192

    tp (μs)1 10410310 102

    10

    102

    PPP(W)

    1

    Tj (°C)0 20015050 100

    001aaa193

    0.4

    0.8

    1.2

    PPP

    0

    PPP(25°C)

    VR (V)0 542 31

    001aaa142

    7

    8

    9

    Cd(pF)

    6

    001aaa143

    1

    10

    IRM

    0

    Tj (°C)−100 1501000 50−50

    IRM(25°C)

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 5 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    Fig 7. ESD clamping test setup and waveforms

    006aaa062

    450 Ω

    50 Ω

    IEC 61000-4-2 networkCZ = 150 pF; RZ = 330 Ω

    DUT: PESD5V0L7BAS PESD5V0L7BS

    RG 223/U50 Ω coaxRZ

    CZ

    ESD TESTER 4 GHz DIGITALOSCILLOSCOPE10×

    ATTENUATOR

    vertical scale = 200 V/divhorizontal scale = 50 ns/div

    vertical scale = 10 V/divhorizontal scale = 50 ns/div

    vertical scale = 200 V/divhorizontal scale = 50 ns/div

    vertical scale = 10 V/divhorizontal scale = 50 ns/div

    GND

    GND

    GND

    unclamped +1 kV ESD voltage waveform(IEC 61000-4-2 network)

    clamped +1 kV ESD voltage waveform(IEC 61000-4-2 network)

    GND

    unclamped −1 kV ESD voltage waveform(IEC 61000-4-2 network)

    clamped −1 kV ESD voltage waveform(IEC 61000-4-2 network)

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 6 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    7. Application information

    The PESD5V0L7BAS and the PESD5V0L7BS are designed for the protection of up to seven bidirectional data lines from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESD5V0L7BAS and the PESD5V0L7BS may be used on lines where the signal polarities are above and below ground.

    The PESD5V0L7BAS and the PESD5V0L7BS provide a surge capability of 35 W per line for a 8/20 s waveform.

    Circuit board layout and protection device placement:

    Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended:

    1. Place the device as close to the input terminal or connector as possible.2. The path length between the device and the protected line should be minimized.3. Keep parallel signal paths to a minimum.4. Avoid running protected conductors in parallel with unprotected conductors.5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

    ground loops.6. Minimize the length of the transient return path to ground.7. Avoid using shared transient return paths to a common ground point.8. Ground planes should be used whenever possible. For multilayer PCBs, use ground

    vias.

    Fig 8. Typical application for ESD protection of seven lines carrying bidirectional data

    006aaa063

    high-speeddata lines

    PESD5V0L7BASPESD5V0L7BS

    GND

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 7 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    8. Package outline

    Fig 9. Package outline SOT505-1 (TSSOP8)

    UNIT A1A

    max.A2 A3 bp LHE Lp w yvc eD

    (1) E(2) Z(1) θ

    REFERENCESOUTLINEVERSION

    EUROPEANPROJECTION ISSUE DATE IEC JEDEC JEITA

    mm 0.150.05

    0.950.80

    0.450.25

    0.280.15

    3.12.9

    3.12.9

    0.655.14.7

    0.700.35

    6°0°

    0.1 0.10.10.94

    DIMENSIONS (mm are the original dimensions)

    Notes

    1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

    2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

    0.70.4

    SOT505-1 99-04-0903-02-18

    w Mbp

    D

    Z

    e

    0.25

    1 4

    8 5

    θ

    AA2 A1

    Lp

    (A3)

    detail X

    L

    HE

    E

    c

    v M A

    XA

    y

    2.5 5 mm0

    scale

    TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm SOT505-1

    1.1

    pin 1 index

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 8 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    Fig 10. Package outline SOT96-1 (SO8/MS-012)

    UNITA

    max. A1 A2 A3 bp c D(1) E(2) (1)e HE L Lp Q Zywv θ

    REFERENCESOUTLINEVERSION

    EUROPEANPROJECTION ISSUE DATE IEC JEDEC JEITA

    mm

    inches

    1.750.250.10

    1.451.25

    0.250.490.36

    0.250.19

    5.04.8

    4.03.8

    1.276.25.8

    1.050.70.6

    0.70.3 8

    0

    o

    o

    0.25 0.10.25

    DIMENSIONS (inch dimensions are derived from the original mm dimensions)

    Notes

    1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

    2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

    1.00.4

    SOT96-1

    X

    w M

    θ

    AA1A2

    bp

    D

    HE

    Lp

    Q

    detail X

    E

    Z

    e

    c

    L

    v M A

    (A )3

    A

    4

    5

    pin 1 index

    1

    8

    y

    076E03 MS-012

    0.0690.0100.004

    0.0570.049

    0.010.0190.014

    0.01000.0075

    0.200.19

    0.160.15

    0.050.2440.228

    0.0280.024

    0.0280.012

    0.010.010.041 0.0040.0390.016

    0 2.5 5 mm

    scale

    SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

    99-12-2703-02-18

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 9 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    9. Packing information

    [1] For further information and the availability of packing methods, see Section 13.

    10. Soldering

    Table 10. Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]

    Type number Package Description Packing quantity1000 2500

    PESD5V0L7BAS SOT505-1 8 mm pitch, 12 mm tape and reel - -118

    PESD5V0L7BS SOT96-1 8 mm pitch, 12 mm tape and reel -115 -118

    Reflow soldering is the only recommended soldering method.

    Fig 11. Reflow soldering footprint SOT505-1 (TSSOP8)

    sot505-1_froccupied areasolder lands Dimensions in mm

    3.2003.6005.750

    0.725

    0.650

    0.125

    0.4500.600

    3.600

    2.950

    0.125

    0.125

    5.500

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 10 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    Fig 12. Reflow soldering footprint SOT96-1 (SO8/MS-012)

    Fig 13. Wave soldering footprint SOT96-1 (SO8/MS-012)

    sot096-1_froccupied area

    solder lands

    Dimensions in mmplacement accuracy ± 0.25

    1.30

    0.60 (8×)

    1.27 (6×)

    4.00 6.60

    5.50

    7.00

    sot096-1_fw

    solder resist

    occupied area

    solder lands

    Dimensions in mm

    board direction

    placement accurracy ± 0.25

    4.00

    5.50

    1.30

    0.3 (2×)0.60 (6×)

    1.20 (2×)

    1.27 (6×)

    7.006.60

    enlarged solder land

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 11 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    11. Revision history

    Table 11. Revision historyDocument ID Release date Data sheet status Change notice SupersedesPESD5V0L7BAS_BS v.4 20100623 Product data sheet - PESD5V0L7BAS_BS_3

    Modifications: • Section 4 “Marking”: marking code corrected for PESD5V0L7BAS• Section 10 “Soldering”: added• Section 12 “Legal information”: updated

    PESD5V0L7BAS_BS_3 20090820 Product data sheet - PESD5V0L7BAS_BS_2

    PESD5V0L7BAS_BS_2 20041125 Product data sheet - PESD5V0L7BS_1

    PESD5V0L7BS_1 20040315 Product specification - -

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 12 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    12. Legal information

    12.1 Data sheet status

    [1] Please consult the most recently issued document before initiating or completing a design.

    [2] The term ‘short data sheet’ is explained in section “Definitions”.

    [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

    12.2 DefinitionsDraft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

    Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

    Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

    12.3 DisclaimersLimited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

    In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

    Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

    Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

    Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

    malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

    Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

    Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

    NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

    Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

    Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

    No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

    Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

    Document status[1][2] Product status[3] Definition

    Objective [short] data sheet Development This document contains data from the objective specification for product development.

    Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

    Product [short] data sheet Production This document contains the product specification.

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 13 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

    12.4 TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

    13. Contact information

    For more information, please visit: http://www.nxp.com

    For sales office addresses, please send an email to: [email protected]

    PESD5V0L7BAS_BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 4 — 23 June 2010 14 of 15

  • NXP Semiconductors PESD5V0L7BAS; PESD5V0L7BSLow capacitance 7-fold bidirectional ESD protection diode arrays

    14. Contents

    1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 General description . . . . . . . . . . . . . . . . . . . . . 11.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 12 Pinning information. . . . . . . . . . . . . . . . . . . . . . 23 Ordering information. . . . . . . . . . . . . . . . . . . . . 24 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 36 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 47 Application information. . . . . . . . . . . . . . . . . . . 78 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 89 Packing information . . . . . . . . . . . . . . . . . . . . 1010 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1011 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1212 Legal information. . . . . . . . . . . . . . . . . . . . . . . 1312.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1312.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1312.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 1312.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1413 Contact information. . . . . . . . . . . . . . . . . . . . . 1414 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

    © NXP B.V. 2010. All rights reserved.For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected]

    Date of release: 23 June 2010Document identifier: PESD5V0L7BAS_BS

    Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.

    1. Product profile1.1 General description1.2 Features and benefits1.3 Applications1.4 Quick reference data

    2. Pinning information3. Ordering information4. Marking5. Limiting values6. Characteristics7. Application information8. Package outline9. Packing information10. Soldering11. Revision history12. Legal information12.1 Data sheet status12.2 Definitions12.3 Disclaimers12.4 Trademarks

    13. Contact information14. Contents

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