n-channel 100 v, 5.1 m typ., 110 a, stripfet vii deepgate ... · 5.15 5.20 vgs=10v 5.25 am15959v1...
TRANSCRIPT
This is information on a product in full production.
July 2013 DocID024058 Rev 2 1/16
16
STF110N10F7, STP110N10F7
N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• Ultra low on-resistance
• 100% avalanche tested
Applications• Switching applications
DescriptionThese devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
TO-220TO-220FP123
123
TAB
Order codes VDS RDS(on) max ID PTOT
STF110N10F7100 V 0.007 Ω
45 A 30 W
STP110N10F7 110 A 150 W
Table 1. Device summary
Order codes Marking Package Packaging
STF110N10F7110N10F7
TO-220FPTube
STP110N10F7 TO-220
www.st.com
Contents STF110N10F7, STP110N10F7
2/16 DocID024058 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID024058 Rev 2 3/16
STF110N10F7, STP110N10F7 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol ParameterValue Unit
TO-220FP TO-220
VDS Drain-source voltage 100 V
VGS Gate-source voltage ± 20 V
ID(1)
1. This value is rated according to Rthj-c.
Drain current (continuous) at TC = 25 °C 45 110 A
ID (1) Drain current (continuous) at TC = 100 °C 32 76 A
IDM(2)
2. Limited by safe operating area.
Drain current (pulsed) 180 415 A
PTOT (1) Total dissipation at Tc = 25 °C 30 150 W
EAS(3)
3. Starting TJ=25 °C, ID=18, VDD=50 V.
Single pulse avalanche energy 490 mJ
TJ Operating junction temperature-55 to 175
°C
Tstg Storage temperature °C
Table 3. Thermal resistance
Symbol ParameterValue
UnitTO-220FP TO-220
Rthj-case Thermal resistance junction-case 5.00 1.00 °C/W
Rthj-amb Thermal resistance junction-amb 62.50 °C/W
Electrical characteristics STF110N10F7, STP110N10F7
4/16 DocID024058 Rev 2
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdown voltage (VGS= 0)
ID = 250 µA 100 - V
IDSSZero gate voltage drain current (VGS = 0)
VDS = 100 V 1 µA
VDS = 100 V; TC=125 °C 10 µA
IGSSGate body leakage current
(VDS = 0)VGS = 20 V 100 nA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2.5 4.5 V
RDS(on)Static drain-source on- resistance
For TO-220FP:VGS= 10 V, ID= 22.5 A
5.1 7 mΩFor TO-220:VGS= 10 V, ID= 55 A
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS =50 V, f=1 MHz, VGS=0
- 5117 - pF
Coss Output capacitance - 992 - pF
CrssReverse transfer capacitance
- 39 - pF
Qg Total gate charge VDD=50 V, ID = 110 A
VGS =10 VFigure 17
- 72 - nC
Qgs Gate-source charge - 31 - nC
Qgd Gate-drain charge - 16 - nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay timeVDD=50 V, ID= 55 A, RG=4.7 Ω, VGS= 10 VFigure 16
- 25 - ns
tr Rise time - 36 - ns
td(off) Turn-off delay time - 52 - ns
tf Fall time - 21 - ns
DocID024058 Rev 2 5/16
STF110N10F7, STP110N10F7 Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max. Unit
ISD
Source-drain current:
For TO-220FP - 45 A
For TO-220 - 110 A
ISDM(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed):For TO-220FP - 180 A
For TO-220 - 415 A
VSD(2)
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward on voltage
For TO-220FP:ISD = 22.5 A, VGS=0
- 1.2 VFor TO-220:ISD = 55 A, VGS=0
trr Reverse recovery time ISD = 110 A, di/dt = 100 A/µs,
VDD=80 V, Tj=150 °C
- 77 ns
Qrr Reverse recovery charge - 150 nC
IRRM Reverse recovery current - 4.3 A
Electrical characteristics STF110N10F7, STP110N10F7
6/16 DocID024058 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP
ID
100
10
1
0.10.1 1 VDS(V)10
(A)
Operation in
this a
rea is
Limite
d by max RDS(on)
100µs
1ms
10ms
Tj=175°CTc=25°CSingle pulse
AM15957v1
Single pulse
0.050.020.01
δ=0.5K
10 tp(s)-5 10 -4 10 -3
10 -3
10 -610 -4
10 -2
10 -2
10 -1
Zth_TOFPDEF
Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220
ID
100
10
1
0.10.1 1 VDS(V)10
(A)
Operation in
this a
rea is
Limite
d by max RDS(on)
100µs
1ms
10ms
Tj=175°CTc=25°CSingle pulse
AM15958v1
Single pulse
0.050.020.01
δ=0.5K
10 tp(s)-5 10 -4 10 -3
10 -2
10 -610 -3
10 -2 10 -1
Zth_280TOL
Figure 6. Output characteristics Figure 7. Transfer characteristics
ID
300
200
100
00 2 VDS(V)4
(A)
1 3 5
4V
5V
6V
VGS=8, 9, 10V
150
50
250
6
7V
7 8
350
AM15948v1
ID
300
200
100
00 4 VGS(V)8
(A)
2 6
VDS=2V
50
150
250
AM15949v1
DocID024058 Rev 2 7/16
STF110N10F7, STP110N10F7 Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance for TO-220FP
VGS
6
4
2
00 Qg(nC)
(V)
40
8
20
10
VDD=50VID=110A12
60 80
AM15950v1RDS(on)
5.10
5.05
5.00
4.955 15 ID(A)
(mΩ)
25 35
5.15
5.20
VGS=10V5.25
AM15959v1
Figure 10. Static drain-source on-resistance for TO-220
Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs temperature
Figure 13. Normalized on-resistance vs temperature
RDS(on)
5.2
5.1
5.0
4.90 20 ID(A)
(mΩ)
40 60
5.3VGS=10V
80 100
AM15960v1 C
3000
2000
1000
00 20 VDS(V)
(pF)
10
4000
30
Ciss
CossCrss
40 50 60 70 80
5000
6000
AM15952v1
VGS(th)
0.7
0.6
0.5
0.4-75 0 TJ(°C)
(norm)
-50
0.8
7525 50
ID=250µA
-25 125 150
0.9
1
1.1
1.2
100
AM015953v1 RDS(on)
1.6
1.4
0.8
0.4TJ(°C)
(norm)
0.6
1.2
1
1.8
ID=55A
-75 0-50 7525 50-25 125 150
2
100
AM15954v1
Electrical characteristics STF110N10F7, STP110N10F7
8/16 DocID024058 Rev 2
Figure 14. Normalized BVDSS vs temperature Figure 15. Source-drain diode forward vs temperature
V(BR)DSS
TJ(°C)
(norm)
0.94
0.96
0.98
1.00
1.02
1.04
ID=250µA
-75 0-50 7525 50-25 125 150100
AM15955v1VSD
0 40 ISD(A)
(V)
20 10060 800.5
0.6
0.7
0.8
TJ=-55°C
TJ=175°C
TJ=25°C
0.9
1
1.1
AM15956v1
DocID024058 Rev 2 9/16
STF110N10F7, STP110N10F7 Test circuits
3 Test circuits
Figure 16. Switching times test circuit for resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STF110N10F7, STP110N10F7
10/16 DocID024058 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DocID024058 Rev 2 11/16
STF110N10F7, STP110N10F7 Package mechanical data
Table 8. TO-220FP mechanical data
Dim.mm
Min. Typ. Max.
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
Package mechanical data STF110N10F7, STP110N10F7
12/16 DocID024058 Rev 2
Figure 22. TO-220FP drawing
7012510_Rev_K_B
DocID024058 Rev 2 13/16
STF110N10F7, STP110N10F7 Package mechanical data
Table 9. TO-220 type A mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95
Package mechanical data STF110N10F7, STP110N10F7
14/16 DocID024058 Rev 2
Figure 23. TO-220 type A drawing
DocID024058 Rev 2 15/16
STF110N10F7, STP110N10F7 Revision history
5 Revision history
Table 10. Document revision history
Date Revision Changes
03-Dec-2012 1 Initial release.
16-Jul-2013 2
– Part numbers (STF45N10F7 and STH110N10F7-2) have been moved to two separate datasheets
– Modified: title, IDM value for TO-220– Added: EAS
– Modified: the entire typical values in Table 5 and 6
– Modified: typical and max values in Table 7– Modified: Figure 16, 17, 18, 19, Table 9 and Figure 23– Minor text changes
STF110N10F7, STP110N10F7
16/16 DocID024058 Rev 2
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve theright to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at anytime, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes noliability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of thisdocument refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party productsor services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of suchthird party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIEDWARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIEDWARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWSOF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USEIN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITHPRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS ORENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNEDFOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED INWRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE,AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS.PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THECORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately voidany warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, anyliability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2013 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com