November 2008 Rev 1 1/12

12

STP190N55LF3N-channel 55 V, 2.9 mΩ, 120 A, TO-220

STripFET™ Power MOSFET

Features

Logic level drive

100% avalanche tested

Application Switching applications

– Automotive

DescriptionThis n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique “single feature size” strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.

Figure 1. Internal schematic diagram

Type VDSSRDS(on)

max ID PD

STP190N55LF3 55 V < 3.7 mΩ 120 A 312 W

TO-2201

23

Table 1. Device summary

Order code Marking Package Packaging

STP190N55LF3 190N55LF3 TO-220 Tube

www.st.com

Contents STP190N55LF3

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Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

STP190N55LF3 Electrical ratings

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1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS=0) 55 V

VGS Gate-Source voltage ± 18 V

ID (1)

1. Current limited by package

Drain current (continuous) at TC = 25 °C 120 A

ID (1) Drain current (continuous) at TC = 100 °C 120 A

IDM (2)

2. Pulse width limited by safe operating area

Drain current (pulsed) 480 A

PTOT Total dissipation at TC = 25 °C 312 W

Derating factor 2.08 W/°C

EAS (3)

3. Starting Tj = 25 °C, ID = 60 A, VDD = 40 V

Single pulse avalanche energy 1000 mJ

Tstg Storage temperature -55 to 175 °C

Tj Max. operating junction temperature 175 °C

Table 3. Thermal resistance

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.48 °C/W

Rthj-a Thermal resistance junction-ambient max 62.5 °C/W

TL Maximum lead temperature for soldering purpose 300 °C

Electrical characteristics STP190N55LF3

4/12

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown Voltage

ID = 250 µA, VGS= 0 55 V

IDSSZero gate voltage drain current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc = 125 °C

10

100

µA

µA

IGSSGate body leakage current

(VDS = 0)VGS = ±18 V ±200 nA

VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 1 2.5 V

RDS(on)Static drain-source on resistance

VGS= 10 V, ID= 30 A

VGS= 5 V, ID= 30 A

2.9

3.3

3.7

4.5

mΩmΩ

Table 5. Dynamic

Symbol Parameter Test conditions Min Typ. Max. Unit

gfs (1)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance VDS = 15 V, ID=60 A 250 S

Ciss

Coss

Crss

Input capacitance

Output capacitanceReverse transfer capacitance

VDS = 25 V, f=1 MHz, VGS=06200

145080

pF

pFpF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 44 V, ID = 120 A

VGS = 5 V

(see Figure 16)

60

20

30

80 nC

nC

nC

STP190N55LF3 Electrical characteristics

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Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

tr

Turn-on delay time

Rise time

VDD= 27.5 V, ID= 60 A,

RG=4.7 Ω, VGS=10 V

(see Figure 15),

(see Figure 18)

20

40

ns

ns

td(off)

tf

Turn-off delay timeFall time

VDD= 27.5 V, ID= 60 A,

RG=4.7 Ω, VGS=10 V

(see Figure 15), (see Figure 18)

16040

nsns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

ISDM

Source-drain current

Source-drain current (pulsed)(1)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

120

480

A

A

VSD Forward on voltage ISD= 120 A, VGS=0 1.5 V

trrQrr

IRRM

Reverse recovery timeReverse recovery charge

Reverse recovery current

ISD= 120 A,

di/dt = 100A/µs,

VDD= 35 V, Tj= 150 °C

(see Figure 17)

5090

3.6

nsnC

A

Electrical characteristics STP190N55LF3

6/12

2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance

ID

100

10

1

0.10.1 1 100 VDS(V)10

(A)

Operation in

this

area is

Limite

d by max R

DS(on)

100µs

1ms

10msTj=150°CTc=25°C

Sinlgepulse

AM01591v1

10-5

10-4

10-3 10

-210

-1tp(s)

10-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-cδ=tp/τ

tp

τ

Single pulse

δ=0.5

280tok

ID

150

100

50

00 4 VDS(V)8

(A)

2 6

200

250

300

350

400

3V

4V

5V

VGS=10V

AM01592v1ID

150

100

50

00 1 VGS(V)2

(A)

200

250

3 4

VDS=10V

AM01593v1

STP190N55LF3 Electrical characteristics

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Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on resistance vs temperature

Figure 12. Source-drain diode forward characteristics

VGS

6

4

2

00 20 Qg(nC)

(V)

80

8

40 60

10

VDD=44VVGS=10VID=120A

100 120

AM01594v1 C

1000

100

10

10 20 VDS(V)

(pF)

10

10000

30

Ciss

Coss

Crss

20 30

AM01595v1

VGS(th)

0.80

0.60

0.40

0.20-50 0 TJ(°C)

(norm)

1.00

50 100 150

AM01596v1

Test circuit STP190N55LF3

8/12

3 Test circuit

Figure 13. Unclamped inductive load test circuit

Figure 14. Unclamped inductive waveform

Figure 15. Switching times test circuit for resistive load

Figure 16. Gate charge test circuit

Figure 17. Test circuit for inductive load switching and diode recovery times

Figure 18. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

µF3.3µF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200µF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100µH

µF3.3 1000

µF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200µF

3.3µF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

STP190N55LF3 Package mechanical data

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4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

Package mechanical data STP190N55LF3

10/12

TO-220 mechanical data

Dimmm inch

Min Typ Max Min Typ Max

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066c 0.48 0.70 0.019 0.027

D 15.25 15.75 0.6 0.62

D1 1.27 0.050E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202F 1.23 1.32 0.048 0.051

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154

L20 16.40 0.645L30 28.90 1.137

∅P 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

STP190N55LF3 Revision history

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5 Revision history

Table 8. Document revision history

Date Revision Changes

05-Nov-2008 1 First release

STP190N55LF3

12/12

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