mx29f200c t/b · 5 p/n:pm1250 rev. 2.0 dec. 04 2012 mx29f200c t/b logic symbol 16 or 8 q0-q15 (a-1)...
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1P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY
FEATURES
GENERAL FEATURES• SinglePowerSupplyOperation -4.5to5.5voltforread,erase,andprogramoperations• 262,144x8/131,072x16switchable• BootSectorArchitecture -T=TopBootSector -B=BottomBootSector• SectorStructure -16K-Bytex1,8K-Bytex2,32K-Bytex1,and64K-Bytex3• Sectorprotection -Hardwaremethodtodisableanycombinationofsectorsfromprogramoreraseoperations -Temporarysectorunprotectedallowscodechangesinpreviouslylockedsectors• Latch-upprotectedto100mAfrom-1VtoVcc+1V• CompatiblewithJEDECstandard -PinoutandsoftwarecompatibletosinglepowersupplyFlash
PERFORMANCE• HighPerformance -Accesstime:70/90ns -Byte/Wordprogramtime:9us/11us(typical) -Erasetime:0.7s/sector,4s/chip(typical)• LowPowerConsumption -Lowactivereadcurrent:40mA(maximum)at5MHz -Lowstandbycurrent:1uA(typical)• Minimum100,000erase/programcycle• 20yearsdataretention
SOFTWARE FEATURES• EraseSuspend/EraseResume -Suspendssectoreraseoperation to readdata fromorprogramdata toanothersectorwhich isnotbeingerased
• StatusReply -Data#Polling&Togglebitsprovidedetectionofprogramanderaseoperationcompletion
HARDWARE FEATURES• Ready/Busy#(RY/BY#)Output -Providesahardwaremethodofdetectingprogramanderaseoperationcompletion• HardwareReset(RESET#)Input -Providesahardwaremethodtoresettheinternalstatemachinetoreadmode
PACKAGE • 44-PinSOP• 48-PinTSOP• All devices are RoHS Compliant
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MX29F200C T/B
ContentsFEATURES .................................................................................................................................................................. 1
GENERALFEATURES...............................................................................................................................1SOFTWAREFEATURES............................................................................................................................1HARDWAREFEATURES...........................................................................................................................1PACKAGE..................................................................................................................................................1
PIN CONFIGURATIONS .............................................................................................................................................. 544SOP(500mil)...........................................................................................................................................548TSOP(TYPEI)(12mmx20mm)............................................................................................................5
PIN DESCRIPTION ...................................................................................................................................................... 6LOGICSYMBOL.........................................................................................................................................6
BLOCK DIAGRAM ....................................................................................................................................................... 7Table 1. SECTOR STRUCTURE ................................................................................................................................. 8
MX29F200CTTopBootSectorAddressesTables......................................................................................8MX29F200CBBottomBootSectorAddressesTables................................................................................8Table2.BUSOPERATION.........................................................................................................................9REQUIREMENTSFORREADINGARRAYDATA....................................................................................10WRITECOMMANDS/COMMANDSEQUENCES.....................................................................................10RESET#OPERATION..............................................................................................................................10SECTORPROTECTOPERATION...........................................................................................................11CHIPUNPROTECTOPERATION...........................................................................................................11TEMPORARYSECTORUNPROTECTOPERATION..............................................................................11AUTOMATICSELECTOPERATION........................................................................................................11VERIFYSECTORPROTECTSTATUSOPERATION...............................................................................12DATAPROTECTION.................................................................................................................................12WRITEPULSE"GLITCH"PROTECTION................................................................................................12LOGICALINHIBIT.....................................................................................................................................12POWER-UPSEQUENCE.........................................................................................................................12POWER-UPWRITEINHIBIT....................................................................................................................12POWERSUPPLYDECOUPLING.............................................................................................................12TABLE3.MX29F200CT/BCOMMANDDEFINITIONS............................................................................13RESET.....................................................................................................................................................14AUTOMATICSELECTCOMMANDSEQUENCE.....................................................................................14AUTOMATICPROGRAMMING................................................................................................................15CHIPERASE...........................................................................................................................................16SECTORERASE......................................................................................................................................16SECTORERASESUSPEND....................................................................................................................17SECTORERASERESUME......................................................................................................................17
ABSOLUTE MAXIMUM STRESS RATINGS ............................................................................................................. 18OPERATING TEMPERATURE AND VOLTAGE ........................................................................................................ 18DC CHARACTERISTICS ........................................................................................................................................ 19SWITCHING TEST CIRCUITS ................................................................................................................................... 20
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SWITCHING TEST WAVEFORMS ........................................................................................................................... 20AC CHARACTERISTICS ......................................................................................................................................... 21
Figure1.COMMANDWRITEOPERATION.............................................................................................22READ/RESET OPERATION ...................................................................................................................................... 23
Figure2.READTIMINGWAVEFORMS...................................................................................................23ACCHARACTERISTICS..........................................................................................................................24Figure3.RESET#TIMINGWAVEFORM.................................................................................................24
ERASE/PROGRAM OPERATION ............................................................................................................................. 25Figure4.AUTOMATICCHIPERASETIMINGWAVEFORM....................................................................25Figure5.AUTOMATICCHIPERASEALGORITHMFLOWCHART..........................................................26Figure6.AUTOMATICSECTORERASETIMINGWAVEFORM..............................................................27Figure7.AUTOMATICSECTORERASEALGORITHMFLOWCHART..................................................28Figure8.ERASESUSPEND/RESUMEFLOWCHART............................................................................29Figure9.AUTOMATICPROGRAMTIMINGWAVEFORMS.....................................................................30Figure10.CE#CONTROLLEDWRITETIMINGWAVEFORM................................................................31Figure11.AUTOMATICPROGRAMMINGALGORITHMFLOWCHART..................................................32
SECTOR PROTECT/CHIP UNPROTECT ................................................................................................................. 33Figure12.SECTORPROTECT/CHIPUNPROTECTWAVEFORM(RESET#Control)...........................33Figure13-1.IN-SYSTEMSECTORPROTECTWITHRESET#=Vhv.......................................................34Figure13-2.CHIPUNPROTECTALGORITHMSWITHRESET#=Vhv....................................................35Table5.TEMPORARYSECTORUNPROTECT.......................................................................................36Figure14.TEMPORARYSECTORUNPROTECTWAVEFORMS...........................................................36Figure15.TEMPORARYSECTORUNPROTECTFLOWCHART...........................................................37Figure16.SILICONIDREADTIMINGWAVEFORM................................................................................38
WRITE OPERATION STATUS ................................................................................................................................... 39Figure17.DATA#POLLINGTIMINGWAVEFORMS(DURINGAUTOMATICALGORITHMS)................39Figure18.DATA#POLLINGALGORITHM...............................................................................................40Figure19.TOGGLEBITTIMINGWAVEFORMS(DURINGAUTOMATICALGORITHMS).....................41Figure20.TOGGLEBITALGORITHM...................................................................................................42
RECOMMENDED OPERATING CONDITIONS ......................................................................................................... 43ERASE AND PROGRAMMING PERFORMANCE .................................................................................................... 44DATA RETENTION .................................................................................................................................................... 44LATCH-UP CHARACTERISTICS .............................................................................................................................. 44TSOP AND SOP PIN CAPACITANCE ....................................................................................................................... 44ORDERING INFORMATION ...................................................................................................................................... 45PART NAME DESCRIPTION ..................................................................................................................................... 46PACKAGE INFORMATION ........................................................................................................................................ 47REVISION HISTORY ................................................................................................................................................. 49
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MX29F200C T/B
PIN CONFIGURATIONS
44 SOP(500mil)
48 TSOP(TYPE I) (12mm x 20mm)
2345678910111213141516171819202122
44434241403938373635343332313029282726252423
NCRY/BY#
NCA7A6A5A4A3A2A1A0
CE#GNDOE#
Q0Q8Q1Q9Q2
Q10Q3
Q11
RESET#WE#A8A9A10A11A12A13A14A15A16BYTE#GNDQ15/A-1Q7Q14Q6Q13Q5Q12Q4VCC
MX2
9F20
0C T
/B
A15A14A13A12A11A10
A9A8NCNC
WE#RESET#
NCNC
RY/BY#NCNCA7A6A5A4A3A2A1
123456789101112131415161718192021222324
A16BYTE#GNDQ15/A-1Q7Q14Q6Q13Q5Q12Q4VCCQ11Q3Q10Q2Q9Q1Q8Q0OE#GNDCE#A0
484746454443424140393837363534333231302928272625
MX29F200C T/B(NORMAL TYPE)
A15A14A13A12A11A10A9A8NCNCWE#RESET#NCNCRY/BY#NCNCA7A6A5A4A3A2A1
123456789
101112131415161718192021222324
A16BYTE#
GNDQ15/A-1
Q7Q14
Q6Q13
Q5Q12
Q4VCCQ11Q3
Q10Q2Q9Q1Q8Q0
OE#GNDCE#
A0
484746454443424140393837363534333231302928272625
MX29F200C T/B(REVERSE TYPE)
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MX29F200C T/B
LOGIC SYMBOL
16 or 8Q0-Q15
(A-1)
RY/BY#
A0-A16
CE#
OE#
WE#
RESET#
BYTE#
17
PIN DESCRIPTIONSYMBOL PIN NAMEA0-A16 AddressInputQ0-Q14 DataInput/OutputQ15/A-1 Q15(Wordmode)/LSBaddr.(Bytemode)CE# ChipEnableInputOE# OutputEnableInput
RESET# HardwareResetPin,ActivelowWE# WriteEnableInput
RY/BY# Read/BusyOutputBYTE# Word/ByteSelectionInputVCC PowerSupplyPin(+5V)GND GroundPinNC PinNotConnectedInternally
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BLOCK DIAGRAM
CONTROLINPUTLOGIC
PROGRAM/ERASE
HIGH VOLTAGE
WRITE
STATE
MACHINE
(WSM)
STATE
REGISTERFLASHARRAY
X-DEC
OD
ER
ADDRESS
LATCH
AND
BUFFER Y-PASS GATE
Y-DEC
OD
ER
ARRAYSOURCE
HVCOMMANDDATA
DECODER
COMMAND
DATA LATCH
I/O BUFFER
PGMDATA
HV
PROGRAMDATA LATCH
SENSEAMPLIFIER
Q0-Q15/A-1
A0-AM
AM: MSB address
CE#OE#WE#
RESET#BYTE#
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MX29F200C T/B
MX29F200CT Top Boot Sector Addresses Tables
MX29F200CB Bottom Boot Sector Addresses Tables
Table 1. SECTOR STRUCTURE
A16 A15 A14 A13 A12 Sector Size (Kbytes/Kwords)
Address Range (in hexadecimal)(x8)Address Range (x16) Address Range
SA0 0 0 0 0 X 16/8 00000h-03FFFh 00000h-01FFFhSA1 0 0 0 1 0 8/4 04000h-05FFFh 02000h-02FFFhSA2 0 0 0 1 1 8/4 06000h-07FFFh 03000h-03FFFhSA3 0 0 1 X X 32/16 08000h-0FFFFh 04000h-07FFFhSA4 0 1 X X X 64/32 10000h-1FFFFh 08000h-0FFFFhSA5 1 0 X X X 64/32 20000h-2FFFFh 10000h-17FFFhSA6 1 1 X X X 64/32 30000h-3FFFFh 18000h-1FFFFh
A16 A15 A14 A13 A12 Sector Size (Kbytes/Kwords)
Address Range (in hexadecimal)(x8) Address Range (x16) Address Range
SA0 0 0 X X X 64/32 00000h-0FFFFh 00000h-07FFFhSA1 0 1 X X X 64/32 10000h-1FFFFh 08000h-0FFFFhSA2 1 0 X X X 64/32 20000h-2FFFFh 10000h-17FFFhSA3 1 1 0 X X 32/16 30000h-37FFFh 18000h-1BFFFhSA4 1 1 1 0 0 8/4 38000h-39FFFh 1C000h-1CFFFhSA5 1 1 1 0 1 8/4 3A000h-3BFFFh 1D000h-1DFFFhSA6 1 1 1 1 X 16/8 3C000h-3FFFFh 1E000h-1FFFFh
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Table 2. BUS OPERATION
Notes:1.Vhvistheveryhighvoltage,11.5Vto12.5V.2.Xmeansinputhigh(Vih)orinputlow(Vil).3.SAmeanssectoraddress:A12~A16.4.Code=00H/XX00Hmeansunprotected. Code=01H/XX01Hmeansprotected.
PinsMode
CE# OE# WE#RES-ET#
A0 A1 A6 A9 Q0 ~ Q15
ReadSiliconIDManufactureCode
L L H H L L X VhvC2H(Bytemode)00C2H(Wordmode)
ReadSiliconIDDeviceCode
L L H H H L X Vhv51H/57H(Bytemode)2251H/2257H(Wordmode)
Read L L H H A0 A1 A6 A9 DOUT
Standby H X X H X X X X HIGHZOutputDisable L H H H X X X X HIGHZWrite L H L H A0 A1 A6 A9 DIN
SectorProtect L H L Vhv L H L X DIN
ChipUnprotect L H L Vhv L H H X DIN
VerifySectorProtect/Unprotect L L H H L H L Vhv Code(4)Reset X X X L X X X X HIGHZ
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MX29F200C T/B
REQUIREMENTS FOR READING ARRAY DATA
Readarrayactionistoreadthedatastoredinthearrayout.Whilethememorydeviceisinpowereduporhasbeenreset,itwillautomaticallyenterthestatusofreadarray.Ifthemicroprocessorwantstoreadthedatastoredinarray,ithastodriveCE#(deviceenablecontrolpin)andOE#(Outputcontrolpin)asVil,andinputtheaddressofthedatatobereadintoaddresspinatthesametime.Afteraperiodofreadcycle(TceorTaa),thedatabeingreadoutwillbedisplayedonoutputpinformicroprocessortoaccess.IfCE#orOE#isVih,theoutputwillbeintri-state,andtherewillbenodatadisplayedonoutputpinatall.
Afterthememorydevicecompletesembeddedoperation(automaticEraseorProgram),itwillautomaticallyre-turntothestatusofreadarray,andthedevicecanreadthedatainanyaddressinthearray.Intheprocessoferasing, if thedevicereceives theErasesuspendcommand,eraseoperationwillbestoppedafteraperiodoftimenomorethanTreadyandthedevicewillreturntothestatusofreadarray.Atthistime,thedevicecanreadthedatastoredinanyaddressexceptthesectorbeingerasedinthearray.Inthestatusoferasesuspend,ifuserwantstoreadthedatainthesectorsbeingerased,thedevicewilloutputstatusdataontotheoutput.Similarly,ifprogramcommandisissuedaftererasesuspend,afterprogramoperationiscompleted,systemcanstillreadar-raydatainanyaddressexceptthesectorstobeerased.Thedeviceneedsto issueresetcommandtoenablereadarrayoperationagaininordertoarbitrarilyreadthedatainthearrayinthefollowingtwosituations:
1.Inprogramoreraseoperation,theprogrammingorerasingfailurecausesQ5togohigh.
2.Thedeviceisinautoselectmode.
In the twosituationsabove, if resetcommand isnot issued, thedevice isnot in readarraymodeandsystemmustissueresetcommandbeforereadingarraydata.
WRITE COMMANDS/COMMAND SEQUENCES
Towriteacommandtothedevice,systemmustdriveWE#andCE#toVil,andOE#toVih.Inacommandcycle,alladdressare latchedat the later fallingedgeofCE#andWE#,andalldataare latchedat theearlier risingedgeofCE#andWE#.
"Figure 1. COMMAND WRITE OPERATION" illustratestheACtimingwaveformofawritecommand,and"TA-BLE 3. MX29F200C T/B COMMAND DEFINITIONS"definesallthevalidcommandsetsofthedevice.Systemisnotallowedtowriteinvalidcommandsnotdefinedinthisdatasheet.Writinganinvalidcommandwillbringthedevicetoanundefinedstate.
RESET# OPERATION
DrivingRESET#pinlowforaperiodmorethanTrpwillresetthedevicebacktoreadmode.Ifthedeviceisinprogramoreraseoperation,theresetoperationwill takeatmostaperiodofTreadyforthedevicetoreturntoreadarraymode.Beforethedevicereturnstoreadarraymode,theRY/BY#pinremainslow(busystatus).
WhenRESET#pinisheldatGND±0.3V,thedeviceconsumesstandbycurrent(Isb).However,devicedrawslarg-ercurrentifRESET#pinisheldatVilbutnotwithinGND±0.3V.
ItisrecommendedthatthesystemtotieitsresetsignaltoRESET#pinofflashmemory,sothattheflashmemo-rywillberesetduringsystemresetandallowssystemtoreadbootcodefromflashmemory.
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MX29F200C T/B
SECTOR PROTECT OPERATION
Whenasectorisprotected,programoreraseoperationwillbedisabledonthesesectors.MX29F200CT/Bpro-videsonemethodforsectorprotection.
Oncethesectorisprotected,thesectorremainsprotecteduntilnextchipunprotect,oristemporarilyunprotectedbyassertingRESET#pinatVhv.Refertotemporarysectorunprotectoperationforfurtherdetails.
ThismethodisbyapplyingVhvonRESET#pin.Referto"Figure 12. SECTOR PROTECT/CHIP UNPROTECT WAVEFORM (RESET# Control)"fortimingdiagramand"Figure 13-1. IN-SYSTEM SECTOR PROTECT WITH RESET#=Vhv"and"Figure 13-2. CHIP UNPROTECT ALGORITHMS WITH RESET#=Vhv"forthealgorithmforthismethod.
CHIP UNPROTECT OPERATION
MX29F200CT/Bprovidesonemethod for chipunprotect.Thechipunprotectoperationunprotectsall sectorswithinthedevice.Itisrecommendedtoprotectallsectorsbeforeactivatingchipunprotectmode.Allsectorareunprotectedwhenshippedfromthefactory.
ThismethodisbyapplyingVhvonRESET#pin.Referto"Figure 12. SECTOR PROTECT/CHIP UNPROTECT WAVEFORM (RESET# Control)"fortimingdiagramand"Figure 13-1. IN-SYSTEM SECTOR PROTECT WITH RESET#=Vhv"and"Figure 13-2. CHIP UNPROTECT ALGORITHMS WITH RESET#=Vhv"foralgorithmoftheoperation.
TEMPORARY SECTOR UNPROTECT OPERATION
SystemcanapplyRESET#pinatVhvtoplacethedeviceintemporaryunprotectmode.Inthismode,previouslyprotectedsectorscanbeprogrammedorerasedjustasitisunprotected.Thedevicesreturnstonormalopera-tiononceVhvisremovedfromRESET#pinandpreviouslyprotectedsectorsareagainprotected.
AUTOMATIC SELECT OPERATION
When thedevice is inReadarraymodeorerase-suspendedreadarraymode,usercan issuereadsilicon IDcommandtoenterreadsiliconIDmode.AfterenteringreadsiliconIDmode,usercanqueryseveralsiliconIDscontinuouslyanddoesnotneed to issuereadsilicon IDmodeagain.WhenA0 isLow,devicewilloutputMa-cronixManufactureIDC2.WhenA0ishigh,devicewilloutputDeviceID.InreadsiliconIDmode,issuingresetcommandwillresetdevicebacktoreadarraymodeorerase-suspendedreadarraymode.
AnotherwaytoenterreadsiliconIDistoapplyhighvoltageonA9pinwithCE#,OE#andA1atVil.WhilethehighvoltageofA9pin isdischarged,devicewillautomatically leavereadsiliconIDmodeandgobacktoreadarraymodeorerase-suspendedreadarraymode.WhenA0isLow,devicewilloutputMacronixManufactureIDC2.WhenA0ishigh,devicewilloutputDeviceID.
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VERIFY SECTOR PROTECT STATUS OPERATION
MX29F200CT/BprovideshardwaresectorprotectionagainstProgramandEraseoperation forprotectedsec-tors.ThesectorprotectstatuscanbereadthroughSectorProtectVerifycommand.ThismethodrequiresVhvonA9pin,VihonWE#andA1pins,VilonCE#,OE#,A6andA0pins,andsectoraddressonA12toA16pins.Ifthereadoutdatais01H,thedesignatedsectorisprotected.Oppositely,ifthereadoutdatais00H,thedesignatedsectorisstillnotbeingprotected.
DATA PROTECTION
Toavoidaccidentalerasureorprogrammingofthedevice,thedeviceisautomaticallyresettoreadarraymodeduringpowerup.Besides,onlyaftersuccessfulcompletionofthespecifiedcommandsetswillthedevicebeginitseraseorprogramoperation.
Otherfeaturestoprotectthedatafromaccidentalalternationaredescribedasfollowed.
WRITE PULSE "GLITCH" PROTECTION
CE#,WE#,OE#pulsesshorter than5nsaretreatedasglitchesandwillnotberegardedasaneffectivewritecycle.
LOGICAL INHIBIT
AvalidwritecyclerequiresbothCE#andWE#atVilwithOE#atVih.WritecycleisignoredwheneitherCE#atVih,WE#aVih,orOE#atVil.
POWER-UP SEQUENCE
Uponpowerup,MX29F200CT/Bisplacedinreadarraymode.Furthermore,programoreraseoperationwillbe-ginonlyaftersuccessfulcompletionofspecifiedcommandsequences.
POWER-UP WRITE INHIBIT
WhenWE#,CE#isheldatVilandOE#isheldatVihduringpowerup,thedeviceignoresthefirstcommandontherisingedgeofWE#.
POWER SUPPLY DECOUPLING
A0.1uFcapacitorshouldbeconnectedbetweentheVccandGNDtoreducethenoiseeffect.
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MX29F200C T/B
TABLE 3. MX29F200C T/B COMMAND DEFINITIONS
Notes:1.DeviceID:2251H/51HforTopBootSectordevice. 2257H/57HforBottomBootSectordevice.2.For sector protect verify result,XX00H/00Hmeans sector is not protected,XX01H/01Hmeans sector has
beenprotected.3.SectorProtectcommandisvalidduringVhvatRESET#pin,VihatA1pinandVilatA0,A6pins.ThelastBus
cycisforprotectverify.4. Itisnotallowedtoadoptanyothercodewhichisnotintheabovecommanddefinitiontable.
Command ReadMode ResetModeAutomaticSelect
ManufacturerID DeviceID SectorProtectVerifyWord Byte Word Byte Word Byte
1stBusCycle
Addr Addr XXX 555 AAA 555 AAA 555 AAAData Data F0 AA AA AA AA AA AA
2ndBusCycle
Addr 2AA 555 2AA 555 2AA 555Data 55 55 55 55 55 55
3rdBusCycle
Addr 555 AAA 555 AAA 555 AAAData 90 90 90 90 90 90
4thBusCycle
Addr X00 X00 X01 X02 (Sector)X02 (Sector)X04
Data 00C2 C2 ID ID XX00/XX01 00/01
5thBusCycle
AddrData
6thBusCycle
AddrData
Command Program ChipErase SectorErase EraseSuspend
EraseResume
SectorProtect
Word Byte Word Byte Word Byte Word Byte1stBusCycle
Addr 555 AAA 555 AAA 555 AAA Sector Sector XXX XXXData AA AA AA AA AA AA B0 30 60 60
2ndBusCycle
Addr 2AA 555 2AA 555 2AA 555 sector sectorData 55 55 55 55 55 55 60 60
3rdBusCycle
Addr 555 AAA 555 AAA 555 AAA sector sectorData A0 A0 80 80 80 80 40 40
4thBusCycle
Addr Addr Addr 555 AAA 555 AAA sector sectorData Data Data AA AA AA AA 00/01 00/01
5thBusCycle
Addr 2AA 555 2AA 555Data 55 55 55 55
6thBusCycle
Addr 555 AAA Sector SectorData 10 10 30 30
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RESET
Inthefollowingsituations,executingresetcommandwillresetdevicebacktoreadarraymode:• Amongerasecommandsequence(beforethefullcommandsetiscompleted)• Sectorerasetime-outperiod• Erasefail(whileQ5ishigh)• Amongprogramcommandsequence(beforethefullcommandset iscompleted,erase-suspendedprogramincluded)
• Programfail(whileQ5ishigh,anderase-suspendedprogramfailisincluded)• ReadsiliconIDmode• Sectorprotectverify
Whiledeviceisatthestatusofprogramfailorerasefail(Q5ishigh),usermustissueresetcommandtoresetdevicebacktoreadarraymode.WhilethedeviceisinreadsiliconIDmodeorsectorprotectverifymode,usermustissueresetcommandtoresetdevicebacktoreadarraymode.
Whenthedeviceisintheprogressofprogramming(notprogramfail)orerasing(noterasefail),devicewillig-noreresetcommand.
AUTOMATIC SELECT COMMAND SEQUENCE
AutomaticSelectmodeisusedtoaccessthemanufacturerID,deviceIDandtoverifywhetherornotasectorisprotected.Theautomaticselectmodehasfourcommandcycles.Thefirsttwoareunlockcycles,andfollowedbyaspecificcommand.Thefourthcycleisanormalreadcycle,andusercanreadatanyaddressanynumberoftimeswithoutenteringanothercommandsequence.TheresetcommandisnecessarytoexittheAutomaticSe-lectmodeandbacktoreadarray.Thefollowingtableshowstheidentificationcodewithcorrespondingaddress.
Thereisanalternativemethodtothatshownin"Table 2. BUS OPERATION",whichisintendedforEPROMpro-grammersandrequiresVhvonaddressbitA9.
Address Data (Hex) Representation
ManufacturerIDWord X00 00C2Byte X00 C2
DeviceID Word X01 2251/2257 Top/BottomBootSectorByte X02 51/57 Top/BottomBootSector
SectorProtectVerify Word (Sectoraddress)X02 00/01 Unprotected/protectedByte (Sectoraddress)X04 00/01 Unprotected/protected
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AUTOMATIC PROGRAMMING
TheMX29F200CT/BcanprovidetheuserprogramfunctionbytheformofByte-ModeorWord-Mode.Aslongastheusersentertherightcycledefinedinthe"TABLE 3. MX29F200C T/B COMMAND DEFINITIONS"(including2unlockcyclesandA0H),anydatauserinputswillautomaticallybeprogrammedintothearray.
Once theprogram function is executed, the internalwrite state controllerwill automatically execute thealgo-rithmsand timingsnecessary forprogramandverification,which includesgeneratingsuitableprogrampulse,verifyingwhetherthethresholdvoltageoftheprogrammedcellishighenoughandrepeatingtheprogrampulseifanyofthecellsdoesnotpassverification.Meanwhile,theinternalcontrolwillprohibittheprogrammingtocellsthatpassverificationwhiletheothercellsfailinverificationinordertoavoidover-programming.
Programmingwillonlychangethebitstatusfrom"1"to"0".Thatistosay,itisimpossibletoconvertthebitstatusfrom"0"to"1"byprogramming.Meanwhile,theinternalwriteverificationonlydetectstheerrorsofthe"1"thatisnotsuccessfullyprogrammedto"0".
Anycommandwrittentothedeviceduringprogrammingwillbeignoredexcepthardwarereset,whichwilltermi-natetheprogramoperationafteraperiodoftimenomorethanTready.Whentheembeddedprogramalgorithmiscompleteortheprogramoperationisterminatedbyhardwarereset,thedevicewillreturntothereadingarraydatamode.
Withtheinternalwritestatecontroller,thedevicerequirestheusertowritetheprogramcommandanddataonly.ThetypicalchipprogramtimeatroomtemperatureoftheMX29F200CT/Bis1.5seconds.(Word-Mode)
Whentheembeddedprogramoperationisongoing,usercanconfirmiftheembeddedoperationisfinishedornotbythefollowingmethods:
*1:Thestatus"inprogress"meansbothprogrammodeanderase-suspendedprogrammode.*2:RY/BY#isanopendrainoutputpinandshouldbeweaklyconnectedtoVDDthroughapull-upresistor.*3:Whenanattemptismadetoprogramaprotectedsector,Q7willoutputitscomplementdataorQ6continuestotoggleforabout1usandthedevicereturnstoreadarraystatewithoutprogramingthedataintheprotectedsector.
Status Q7 Q6 Q5 RY/BY#*2Inprogress*1 Q7# Toggling 0 0Finished Q7 Stoptoggling 0 1
Exceedtimelimit Q7# Toggling 1 0
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SECTOR ERASE
SectorEraseistoeraseallthedatainasectorwith"1"and"0"asall"1".Itrequiressixcommandcyclestois-sue.Thefirsttwocyclesare"unlockcycles",thethirdoneisaconfigurationcycle,thefourthandfiftharealso"unlockcycles"andthesixthcycleisthesectorerasecommand.Afterthesectorerasecommandsequenceisissued, there isa time-outperiodof50uscounted internally.During the time-outperiod,additional sectorad-dressandsectorerasecommandcanbewrittenmultiply.Onceuserentersanothersectorerasecommand,thetime-outperiodof50usisrecounted.Ifuserentersanycommandotherthansectoreraseorerasesuspenddur-ingtime-outperiod,theerasecommandwouldbeabortedandthedeviceisresettoreadarraycondition.Thenumberofsectorscouldbefromonesectortoallsectors.Aftertime-outperiodpassingby,additionalerasecom-mandisnotacceptedanderaseembeddedoperationbegins.
Duringsectorerasing,allcommandswillnotbeacceptedexcepthardwareresetanderasesuspendandusercancheckthestatusaschiperase.
Whentheembeddederaseoperationisongoing,usercanconfirmiftheembeddedoperationisfinishedornotbythefollowingmethods:
CHIP ERASE
ChipEraseistoeraseallthedatawith"1"and"0"asall"1".Itneeds6cyclestowritetheactionin,andthefirsttwocyclesare"unlock"cycles,thethirdoneisaconfigurationcycle,thefourthandfiftharealso"unlock"cycles,andthesixthcycleisthechiperaseoperation.
Duringchiperasing,allthecommandswillnotbeacceptedexcepthardwarerestsortheworkingvoltageistoolowthatchiperasewillbeinterrupted.AfterChipErase,thechipwillreturntothestateofReadArray.
Whentheembeddedchiperaseoperationisongoing,usercanconfirmiftheembeddedoperationisfinishedornotbythefollowingmethods:
*1:ThestatusQ3isthetime-outperiodindicator.WhenQ3=0,thedeviceisintime-outperiodandisacceptibletoanothersectoraddresstobeerased.WhenQ3=1,thedeviceisineraseoperationandonlyerasesuspendisvalid.*2:RY/BY#isopendrainoutputpinandshouldbeweaklyconnectedtoVDDthroughapull-upresistor.*3:Whenanattemptismadetoeraseaprotectedsector,Q7willoutputitscomplementdataorQ6continuestotogglefor100usandthedevicereturnedtoreadarraystatuswithouterasingthedataintheprotectedsector.
Status Q7 Q6 Q5 Q2 RY/BY#Inprogress 0 Toggling 0 Toggling 0Finished 1 Stoptoggling 0 1 1
Exceedtimelimit 0 Toggling 1 Toggling 0
Status Q7 Q6 Q5 Q3 Q2 RY/BY#*2Time-outperiod 0 Toggling 0 0 Toggling 0Inprogress 0 Togging 0 1 Toggling 0Finished 1 Stoptoggling 0 1 1 1Exceedtimelimit 0 Toggling 1 1 Toggling 0
16P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
When thedevicehassuspendederasing,user canexecute thecommandsetsexcept sectoreraseandchiperase,suchasreadsiliconID,sectorprotectverify,program,anderaseresume.
SECTOR ERASE RESUME
Sectoreraseresumecommandisvalidonlywhenthedeviceisinerasesuspendstate.Aftereraseresume,usercan issueanothererasesuspendcommand,but thereshouldbea400us intervalbetweeneraseresumeandthenexterasesuspend.Ifuserissueinfinitesuspend-resumeloop,orsuspend-resumeexceeds1024times,thetimeforerasingwillincrease.
SECTOR ERASE SUSPEND
Duringsectorerasure,sectorerasesuspendistheonlyvalidcommand.Ifuserissueerasesuspendcommandinthetime-outperiodofsectorerasure,devicetime-outperiodwillbeover immediatelyandthedevicewillgobacktoerase-suspendedreadarraymode.Ifuserissueerasesuspendcommandduringthesectoreraseisbe-ingoperated,devicewillsuspendtheongoingeraseoperation,andaftertheTready1(≤20us)suspendfinishesandthedevicewillentererase-suspendedreadarraymode.Usercanjudgeifthedevicehasfinishederasesus-pendthroughQ6,Q7,andRY/BY#.
Afterdevicehasenterederase-suspendedreadarraymode,usercanreadothersectorsnotaterasesuspendbythespeedofTaa;whilereadingthesectorinerase-suspendmode,devicewilloutputitsstatus.UsercanuseQ6andQ2tojudgethesectoriserasingortheeraseissuspended.
Status Q7 Q6 Q5 Q3 Q2 RY/BY#Erasesuspendreadinerasesuspendedsector 1 Notoggle 0 N/A Toggle 1Erasesuspendreadinnon-erasesuspendedsector Data Data Data Data Data 1Erasesuspendprograminnon-erasesuspendedsector Q7# Toggle 0 N/A N/A 0
17P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
ABSOLUTE MAXIMUM STRESS RATINGS
OPERATING TEMPERATURE AND VOLTAGE
Commercial (C) Grade SurroundingTemperature(TA) 0°Cto+70°CIndustrial (I) Grade SurroundingTemperature(TA) -40°Cto+85°CVCC Supply Voltages VCCrange +4.5Vto5.5V
SurroundingTemperaturewithBias -65°Cto+125°CStorageTemperature -65°Cto+150°C
VoltageRange
VCC -0.5Vto+7.0V
RESET#,A9 -0.5Vto+13.5VTheotherpins. -0.5VtoVCC+0.7V
OutputShortCircuitCurrent(lessthanonesecond) 200mA
Note:1.Mininumvoltagemayundershootto-2Vduringtransitionandforlessthan20nsduringtransitions.2.MaximumvoltagemayovershoottoVCC+2Vduringtransitionandforlessthan20nsduringtransitions.
18P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
DC CHARACTERISTICS
Symbol Description Min. Typ. Max. RemarkIilk InputLeak ± 1.0uAIolk OutputLeak 10uAIcr1 ReadCurrent(10MHz) 50mA CE#=Vil,OE#=VihIcr2 ReadCurrent(5MHz) 40mA CE#=Vil,OE#=Vih
Isb1 StandbyCurrent(TTL) 1mAVCC=VCCmax,CE#=Vihotherpindisable
Isb2 Standbycurrent(CMOS) 1uA 5uAVCC=VCCmax,CE#=VCC+0.3V,otherpindisable
Icw WriteCurrent 15mA 30mA CE#=Vil,OE#=Vih,WE#=Vil
Vil InputLowVoltage -0.3V 0.8VVih InputHighVoltage 0.7xVCC VCC+0.3V
Vhv VeryHighVoltage for hardwareProtect/Unprotect/AutoSelect/TemporaryUnprotect 11.5V 12V 12.5V
Vol OutputLowVoltage 0.45V Iol=2.1mA,VCC=VCCmin
Voh1 OuputHighVoltage(TTL) 2.4V Ioh1=-2mAVoh2 OuputHighVoltage(CMOS) Vcc-0.4V Ioh2=-100uA
19P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
SWITCHING TEST CIRCUITS
TestConditionOutputLoad:1TTLgateOutputLoadCapacitance,CL:100PFfor90ns,30PFfor70nsRise/FallTimes:10nsInputPulselevels:0.45/0.7xVCCInput/Outputreferencelevelsformeasuringtiming:0.8V,2.0V
SWITCHING TEST WAVEFORMS
R1=6.2KohmR2=2.7Kohm
TESTED DEVICE
DIODES=IN3064OR EQUIVALENT
CLR1
Vcc
0.1uFR2
Vcc
2.0V 2.0V
0.8V0.8VTEST POINTS
0.7xVCC
0.45VOUTPUTINPUT
20P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
AC CHARACTERISTICS
Symbol Description Speed Option -70/90 UnitMin. Typ. Max.Taa Validdataoutputafteraddress 70/90 nsTce ValiddataoutputafterCE#low 70/90 nsToe ValiddataoutputafterOE#low 30/35 nsTdf DataoutputfloatingafterOE#highorCE#high 20 ns
Toh Output hold time from theearliest risingedgeofAddrss,CE#,OE# 0 ns
Trc Readperiodtime 70/90 nsTwc Writeperiodtime 70/90 nsTcwc Commandwriteperiodtime 70/90 nsTas Addresssetuptime 0 nsTah Addressholdtime 45 nsTds Datasetuptime 30/45 nsTdh Dataholdtime 0 nsTcs CE#Setuptime 0 nsTch CE#holdtime 0 nsToes OE#setuptime 0 nsTcep CE#pulsewidth 35/45 nsTceph CE#pulsewidthhigh 20 nsTwp WE#pulsewidth 35 nsTwph WE#pulsewithhigh 30 nsTghwl Readrecovertimebeforewrite 0 nsTbusy Program/EraseactivetimebyRY/BY# 90 nsTavt Programoperation Byte 9 300 usTavt Programoperation Word 11 360 usTaetc ChipEraseOperation 4 32 secTaetb SectorEraseOperation 0.7 8 secTbal SectorAddressholdtime 50 us
21P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 1. COMMAND WRITE OPERATION
Addresses
CE#
OE#
WE#
DIN
Tds
Tah
Data
Tdh
Tcs Tch
Tcwc
Toes Twp Twph
Tas
Vih
Vil
Vih
Vil
Vih
Vil
Vih
Vil
Vih
Vil
VA
VA: Valid Address
22P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
READ/RESET OPERATION
Figure 2. READ TIMING WAVEFORMS
Addresses
CE#
OE#
Taa
WE#
Vih
Vil
Vih
Vil
Vih
Vil
Vih
Vil
Voh
Vol
Trc
HIGH Z HIGH ZDATA Valid
Toe Tdf
Tce
Outputs
Toh
ADD Valid
23P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 3. RESET# TIMING WAVEFORM
AC CHARACTERISTICS
Trh
Trb1
Trp2
Trp1
Tready2
Tready1
RY/BY#
CE#, OE#
RESET#
Reset Timing NOT during Automatic Algorithms
Reset Timing during Automatic Algorithms
RY/BY#
CE#, OE#
Trb2
WE#
RESET#
Item Description Setup Speed UnitTrp1 RESET#PulseWidth(DuringAutomaticAlgorithms) MIN 10 usTrp2 RESET#PulseWidth(NOTDuringAutomaticAlgorithms) MIN 500 nsTrh RESET#HighTimeBeforeRead MIN 0 nsTrb1 RY/BY#RecoveryTime(toCE#,OE#golow) MIN 0 nsTrb2 RY/BY#RecoveryTime(toWE#golow) MIN 50 ns
Tready1RESET#PINLow (DuringAutomaticAlgorithms) toReadorWrite
MAX 20 us
Tready2RESET#PINLow(NOTDuringAutomaticAlgorithms)toReadorWrite
MAX 500 ns
24P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
ERASE/PROGRAM OPERATION
Figure 4. AUTOMATIC CHIP ERASE TIMING WAVEFORM
Twc
Address
OE#
CE#
55h
2AAh SA
10h
InProgress Complete
VA VA
Tas Tah
SA: 555h for chip erase
Tch
Tghwl
Tds Tdh
Taetc
Read StatusLast 2 Erase Command Cycle
Tbusy Trb
TcsWE#
Data
RY/BY#
25P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 5. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data AAH Address 555H
Write Data 80H Address 555H
YES
NOData=FFh ?
Write Data 10H Address 555H
Write Data 55H Address 2AAH
Data# Polling Algorithm or Toggle Bit Algorithm
Auto Chip Erase Completed
26P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 6. AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Twc
Address
OE#
CE#
55h
2AAh SectorAddress 1
SectorAddress 0
30h
InProgress Complete
VA VA
30h
SectorAddress n
Tas
Tah
Tbal
Tch
Tds Tdh
Taetb
Read Status
Last 2 Erase Command Cycle
TbusyTrb
TcsWE#
Data
RY/BY#
30h
Tghwl
27P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 7. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data AAH Address 555H
Write Data 80H Address 555H
Write Data 30H Sector Address
Write Data 55H Address 2AAH
Data# Polling Algorithm orToggle Bit Algorithm
Auto Sector Erase Completed
NOLast Sectorto Erase
YES
YES
NOData=FFh
28P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 8. ERASE SUSPEND/RESUME FLOWCHART
START
Write Data B0H
Toggle Bit checking Q6 not toggled
ERASE SUSPEND
YES
NO
Write Data 30H
Continue Erase
Reading or Programming End
Read Array orProgram
AnotherErase Suspend ?
NO
YES
YES
NO
ERASE RESUME
29P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 9. AUTOMATIC PROGRAM TIMING WAVEFORMS
Address
OE#
CE#
A0h
555h PA
PD Status DOUT
VA VA
Tas Tah
Tch
Tds Tdh
Tavt
Last 2 Read Status CycleLast 2 Program Command Cycle
TbusyTrb
TcsWE#
Data
RY/BY#
Tghwl
30P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 10. CE# CONTROLLED WRITE TIMING WAVEFORM
Address
OE#
CE#
A0h
555h PA
PD Status DOUT
VA VA
Tas Tah
Tcp
Tds Tdh
Tavt or Taetb
TbusyTrb
Tcph
WE#
Data
RY/BY#
Tghwl
31P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 11. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Program Data/Address
Write Data A0H Address 555H
YES
Read Again Data:Program Data?
YES
Auto Program Completed
Data# Polling Algorithm orToggle Bit Algorithm
next address
Last Word to beProgramed
No
No
32P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
SECTOR PROTECT/CHIP UNPROTECT
Figure 12. SECTOR PROTECT/CHIP UNPROTECT WAVEFORM (RESET# Control)
150us: Sector Protect15ms: Chip Unprotect1us
Vhv
Vih
Data
SA, A6A1, A0
CE#
WE#
OE#
VA VA VA
Status
VA: valid address
40h60h60h
Verification
RESET#
33P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 13-1. IN-SYSTEM SECTOR PROTECT WITH RESET#=Vhv
START
Retry count=0
RESET#=Vhv
Wait 1us
Write Sector Addresswith [A6,A1,A0]:[0,1,0]
data: 60h
Write Sector Addresswith [A6,A1,A0]:[0,1,0]
data: 40h
Read at Sector Addresswith [A6,A1,A0]:[0,1,0]
Wait 150us
Reset PLSCNT=1
Temporary Unprotect Mode
RESET#=Vih
Write RESET CMD
Sector Protect Done
Device fail
Temporary Unprotect Mode
Retry Count +1
First CMD=60h?
Data=01h?Retry Count=25?
Yes
YesYes
Yes
No
No
No
No
Protect anothersector?
34P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 13-2. CHIP UNPROTECT ALGORITHMS WITH RESET#=Vhv
Write [A6,A1,A0]:[1,1,0]data: 60h
Write [A6,A1,A0]:[1,1,0]data: 40h
Read [A6,A1,A0]:[1,1,0]
Wait 15ms
Temporary Unprotect
Write reset CMD
Chip Unprotect Done
Retry Count +1
Device fail
All sectorsprotected?
Data=00h?Retry Count=1000?
YesYes
No
No
Yes
Protect All Sectors
START
Retry count=0
RESET#=Vhv
Wait 1us
Temporary Unprotect
First CMD=60h?
Yes
No
No
35P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 14. TEMPORARY SECTOR UNPROTECT WAVEFORMS
Table 5. TEMPORARY SECTOR UNPROTECT
RESET#
CE#
WE#
RY/BY#
Trpvhh
12VVhv
0 or 5V 0 or 5V
Tvhhwl
Trpvhh
Program or Erase Command Sequence
Parameter Alt Description Condition Speed UnitTrpvhh Tvidr RESET#RiseTimetoVhvandVhvFallTimetoRESET# MIN 500 nsTvhhwl Trsp RESET#VhvtoWE#Low MIN 4 us
36P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 15. TEMPORARY SECTOR UNPROTECT FLOWCHART
Notes:1.TemporaryunprotectallprotectedsectorsVhv=11.5~12.5V.2.Theprotectedconditionsoftheprotectedsectorsarethesametotemporarysectorunprotectmode.
Start
Apply RESET# pin Vhv Volt
Enter Program or Erase Mode
(1) Remove Vhv Volt from RESET#(2) RESET# = Vih
Completed Temporary SectorUnprotected Mode
Mode Operation Completed
37P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 16. SILICON ID READ TIMING WAVEFORM
Taa
Tce
Taa
Toe
Toh Toh
Tdf
DATA OUT
C2H 51H (TOP boot)57H (Bottom boot)
Vhv
Vih
VilA9
ADD
CE#
A1
OE#
WE#
A0
DATA OUTDATAQ0-Q7
Vih
Vil
Vih
Vil
Vih
Vil
Vih
Vil
Vih
Vil
Vih
Vil
Vih
Vil
38P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
WRITE OPERATION STATUS
Figure 17. DATA# POLLING TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)
Tdf
Tce
Tch
Toe
Toh
CE#
OE#
WE#
Q7
Q0-Q6
RY/BY#
Tbusy
Status Data Status Data
ComplementComplement True Valid Data
Taa
Address VAVA
High Z
High ZValid DataTrue
39P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 18. DATA# POLLING ALGORITHM
Read Q7~Q0 at valid address(Note 1)
Read Q7~Q0 at valid address
Start
Q7 = Data# ?
Q5 = 1 ?
Q7 = Data# ?(Note 2)
FAIL Pass
No
No
No
Yes
Yes
Yes
Notes:1. Forprogramming,validaddressmeansprogramaddress. Forerasing,validaddressmeanserasesectorsaddress.2. Q7shouldberecheckedevenQ5="1"becauseQ7maychangesimultaneouslywithQ5.
40P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 19. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)
Tdf
Tce
Tch
Toe
Taa
Toh
Address
CE#
OE#
WE#
Q6/Q2
RY/BY#
Tbusy
Valid Status
(first read)
Valid Status
(second read) (stops toggling)
Valid Data
VA VAVA
Notes:
1. VA : Valid Address
2. CE# must be toggled when toggle bit toggling.
VA
Valid Data
41P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
Figure 20. TOGGLE BIT ALGORITHM
Notes:1.Readtogglebittwicetodeterminewhetherornotitistoggling.2.RechecktogglebitbecauseitmaystoptogglingasQ5changesto"1".
Read Q7-Q0 Twice
Q5 = 1?
Read Q7~Q0 Twice
Program/Erase failWrite Reset CMD Program/Erase Complete
Q6 Toggle ?
Q6 Toggle ?
NO
(Note1)
(Note1, 2)
YES
NO
NO
YES
YES
Start
42P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
RECOMMENDED OPERATING CONDITIONS
At Device Power-Up
ACtimingillustratedin"Figure A. AC Timing at Device Power-Up"isrecommendedforthesupplyvoltagesandthecontrolsignalsatdevicepower-up.Ifthetiminginthefigureisignored,thedevicemaynotoperatecorrectly.
Figure A. AC Timing at Device Power-Up
Vcc
ADDRESS
CE#
WE#
OE#
DATA
Tvr
TaaTr or Tf Tr or Tf
TceTf
Vcc(min)
GND
Vih
Vil
Vih
Vil
Vih
Vil
Vih
Vil
Voh High ZVol
ValidOuput
ValidAddress
Tr
ToeTfTr
Symbol Parameter Min. Max. UnitTvr VccRiseTime 20 500000 us/VTr InputSignalRiseTime 20 us/VTf InputSignalFallTime 20 us/V
43P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
LATCH-UP CHARACTERISTICS
ERASE AND PROGRAMMING PERFORMANCE
TSOP AND SOP PIN CAPACITANCE
Note: 1.Typicalconditionmeans25°C,5V. 2.Maximumconditionmeans90°C,4.5V,100Kcycles.
Parameter Symbol Parameter Description Test Set TYP MAX UNITCIN2 ControlPinCapacitance VIN=0 12 pFCOUT OutputCapacitance VOUT=0 12 pFCIN InputCapacitance VIN=0 8 pF
MIN. MAX.InputVoltagedifferencewithGNDonallpinsexceptI/Opins -1.0V 13.5VInputVoltagedifferencewithGNDonallI/Opins -1.0V VCC+1.0VVccCurrent -100mA +100mAIncludesallpinsexceptVCC.Testconditions:VCC=5V,onepinpertesting
PARAMETER LIMITS UNITSMIN. TYP. MAX.ByteProgrammingTime 9 300 usWordProgrammingTime 11 360 usSectorEraseTime 0.7 8 secChipEraseTime 4 32 sec
ChipProgrammingTimeByteMode 2.3 6.8 secWordMode 1.5 4.5 sec
Erase/ProgramCycles 100,000 Cycles
DATA RETENTIONPARAMETER Condition Min. Max. UNITDataretention 55˚C 20 years
44P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
ORDERING INFORMATION
PART NO.ACCESS TIME (ns)
OPERATING Current MAX. (mA)
STANDBY Current MAX. (mA)
PACKAGE Remark
MX29F200CTMI-70 70 40 5 44PinSOPMX29F200CTMI-90 90 40 5 44PinSOP
MX29F200CTTI-70 70 40 548PinTSOP(NormalType)
MX29F200CTTI-90 90 40 548PinTSOP(NormalType)
MX29F200CBMI-70 70 40 5 44PinSOPMX29F200CBMI-90 90 40 5 44PinSOP
MX29F200CBTI-70 70 40 548PinTSOP(NormalType)
MX29F200CBTI-90 90 40 548PinTSOP(NormalType)
MX29F200CTMI-70G 70 40 5 44PinSOP MX29F200CTMI-90G 90 40 5 44PinSOP
MX29F200CTTI-70G 70 40 548PinTSOP(NormalType)
MX29F200CTTI-90G 90 40 548PinTSOP(NormalType)
MX29F200CBMI-70G 70 40 5 44PinSOP MX29F200CBMI-90G 90 40 5 44PinSOP
MX29F200CBTI-70G 70 40 548PinTSOP(NormalType)
MX29F200CBTI-90G 90 40 548PinTSOP(NormalType)
45P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
PART NAME DESCRIPTION
MX 29 F 70C T T I GOPTION:G: RoHS Compliant packageblank: normal
SPEED:70:70ns90: 90ns
TEMPERATURE RANGE:I: Industrial (-40°C to 85°C)
PACKAGE:M:SOPT: TSOP
BOOT BLOCK TYPE:T: Top BootB: Bottom Boot
REVISION:C
DENSITY & MODE:200: 2M, x8/x16 Boot Sector
TYPE:F: 5V
DEVICE:29: Flash
200
46P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
PACKAGE INFORMATION
47P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
48P/N:PM1250 REV. 2.0, DEC. 04, 2012
MX29F200C T/B
REVISION HISTORY
Revision No. Description Page Date1.0 1.Removed"Preliminary"title P1 DEC/14/2005 2.Removedcommercialgrade All 3.Addedaccesstime:55ns All1.1 1.Removedaccesstime:55ns P1,18,19,22 JUN/20/2006 P23,40,41 2.Removedsectorprotect/chipunprotectwithout12V P1,7,14,32~35 3.Addedin-systemsectorprotect/chipunprotect P34~36 4.Addeddata#polling,togglebitalgorithm P27,28 5.AddedRY/BY#timingwaveform P25,29,311.2 1.DataSheetFormatchanged All AUG/15/20061.3 1.Datamodification All AUG/17/20061.4 1.Addedstatement P47 NOV/06/20061.5 1.Addednote4into"TABLE 3. MX29F200C T/B COMMAND DEFINITIONS"P10 JAN/22/20081.6 1.Modified"Figure 10. CE# CONTROLLED WRITE TIMING WAVEFORM" P28 FEB/21/20081.7 1.Modified"Figure 10. CE# CONTROLLED WRITE TIMING WAVEFORM" P28 MAR/09/2009 (Changed"Twhwh1orTwhwh2"into"TavtorTaetb") 2.ModifiedFigure12.DATA#POLLINGTIMINGWAVEFORM P361.8 1.AddednoteofAbsoluteMaximumStressRatings P15 MAY/25/2009 2.AddedTrc,Twp,Twph&Tghwl P18,22,24,27 P28 3.AddedIcw P161.9 1.Addeddataretentiontable P41 JUN/30/2009 2.Modifiedthesectorerasetimemaxfrom15sto8s P18,412.0 1.ModifieddescriptionforRoHScompliance P1,44,45 DEC/04/2012 2.ModifiedOutputLoadCapatitance P19
MX29F200C T/B
49
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